RS9110-N-11-24
Abstract: RS9110-N-11-24-EVB
Text: RS-9110-N-11-24 Self Contained 802.11 b/g/n Module with Networking Stack Datasheet Version 2.2 November 2012 Redpine Signals, Inc. 2107 N. First Street, #680 San Jose, CA 95131. Tel: 408 748-3385 Fax: (408) 705-2019 Email: [email protected] Website: www.redpinesignals.com
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RS-9110-N-11-24
RS9110-N-11-24
11bgn
RS9110-N-11-XX
RS9110-N-11-24-EVB
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Untitled
Abstract: No abstract text available
Text: RS-9110-N-11-28 Self Contained 802.11 a/b/g/n Module with Networking Stack Datasheet Version 1.9 November 2012 Redpine Signals, Inc. 2107 N. First Street, #680 San Jose, CA 95131. Tel: 408 748-3385 Fax: (408) 705-2019 Email: [email protected] Website: www.redpinesignals.com
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RS-9110-N-11-28
RS9110-N-11-28
11abgn
RS9110-N-11-XX
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dell motherboard schematic
Abstract: c2383 equivalent pinout dell battery LA-1221 D3014 C5440 C3679 equivalent c840 dell boe bot schematic diagram SK c3679
Text: A B C D REV VRM CLOCK CK-408 NORTHWOOD PAGE_36,39,40,41 PAGE_3 1 BATTERY A CONNECTOR VCORE CK-TITAN (56 pin TSSOP) PAGE_37 PAGE_36 478 pin +5VSUS PAGE_6 +3.3VALW +5VALW +12V +5VRUN 11/15/02 PAGE_20 PAGE_20 AC97 MODEM CONNECTOR PAGE_22 I2S DOCK INTERFACE
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A00-00
CK-408
100MHZ
400MT/S
LA-1221
dell motherboard schematic
c2383 equivalent
pinout dell battery
LA-1221
D3014
C5440
C3679 equivalent
c840 dell
boe bot schematic diagram
SK c3679
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dell motherboard schematic
Abstract: C3209 dell c640 dell motherboard circuit diagram boe bot schematic diagram LA1221 C3679 equivalent 33VR dell c6005 pinout dell battery
Text: A B C D REV VRM CLOCK CK-408 NORTHWOOD PAGE_36,39,40,41 PAGE_3 1 BATTERY A CONNECTOR VCORE CK-TITAN (56 pin TSSOP) PAGE_37 PAGE_36 478 pin +5VSUS +3.3VALW +5VALW +12V A00-00 136999 LINE IN AUDIO OUT +5VRUN Start Schematics APPROVED 11/15/02 CJ_WANG PAGE_20
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A00-00
CK-408
100MHZ
LA-1221
dell motherboard schematic
C3209
dell c640
dell motherboard circuit diagram
boe bot schematic diagram
LA1221
C3679 equivalent
33VR
dell c6005
pinout dell battery
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dell circuit diagram of motherboard
Abstract: dell c6005 c2383 equivalent C3279 dell c640 dell motherboard circuit diagram C3679 equivalent 5990P C5440 dell motherboard schematic
Text: A B D C REV X01-00 CLOCK VRM CK-408 VCORE CK-TITAN (56 pin TSSOP) PAGE_3 1 BATTERY A CONNECTOR NORTHWOOD uFCPGA PAGE_36,39,40,41 PAGE_37 +3.3VALW +3.3VALW +5VALW +12V +5VRUN PAGE_20 VIDEO CARD AGP4X (3.3V/1.5V) 180 PIN CONNECTOR MIC IN PAGE_20 USB 1.1 AGP4X
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X01-00
CK-408
100MHZ
400MT/S
1F473
X03-00
dell circuit diagram of motherboard
dell c6005
c2383 equivalent
C3279
dell c640
dell motherboard circuit diagram
C3679 equivalent
5990P
C5440
dell motherboard schematic
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DTM180AA
Abstract: DT-408 STD8018A LP05018 LS1012 DTM180AB
Text: ZERO-BIAS SCHOTTKY DIODE DETECTORS 100 KHz - 50 GHz FEATURES • No Bias Required • Matched Input for Excellent VSWR* • Extremely Flat Frequency Response* • Very High Sensitivity DZ Series * (DZR & DZM Series) APPLICATIONS ENVIRONMENTAL RATINGS
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200mW
100mW
DTM180AA
DT-408
STD8018A
LP05018
LS1012
DTM180AB
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m-pulse tunnel diode
Abstract: Mp2407 MP4033 MP2923 M-PULSE
Text: Microwave Table of Contents DIODES Mircowave Schottky Diodes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Zero bias Schottky Diodes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
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B-408 diode
Abstract: MIL-STD-883 method 3015 15kV
Text: PRELIMINARY CSPESD304 4-Channel ESD Array in CSP Features Product Description • • The CSPESD304 is a quad ESD transient voltage supression diode array. Each diode provides a very high level of protection for sensitive electronic components that may be subjected to electrostatic discharge
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CSPESD304
CSPESD304
MIL-STD-883
178mm
B-408 diode
MIL-STD-883 method 3015 15kV
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Ceramic Capacitors 0.2UF 50V
Abstract: 0.2uf 50V Ceramic Capacitor DN007 Ceramic capacitor 0,2uF 50V CH10 CH11 PACDN007 ua712 Ceramic capacitor 0.2uF 50V
Text: PACDN007 18 Channel ESD Protection Array Features Product Description • • • Applications The PACDN007 is a diode array designed to provide 18 channels of ESD protection for electronic components or sub-systems. Each channel consists of a pair of diodes which steers the ESD current pulse either to the
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PACDN007
PACDN007
QSOP-24
Ceramic Capacitors 0.2UF 50V
0.2uf 50V Ceramic Capacitor
DN007
Ceramic capacitor 0,2uF 50V
CH10
CH11
ua712
Ceramic capacitor 0.2uF 50V
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AP209
Abstract: D006 DN006 PACDN006 PACDN006M PACDN006S PDN006S 8 soic pcb footprint
Text: PACDN006 6 Channel ESD Protection Array Features Product Description • • The PACDN006 is a diode array designed to provide 6 channels of ESD protection for electronic components or sub-systems. Each channel consists of a pair of diodes which steers an ESD current pulse to either the
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PACDN006
PACDN006
typ007
AP209
D006
DN006
PACDN006M
PACDN006S
PDN006S
8 soic pcb footprint
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56954
Abstract: No abstract text available
Text: Si6821DQ Vishay Siliconix P-Ch, Reduced Qg MOSFET With Schottky Diode New Product MOSFET PRODUCT SUMMARY VDS V RDS(ON) (W) –20 ID (A) 0.190 @ VGS = –4.5 V "1.7 0.280 @ VGS = –3.0 V "1.3 SCHOTTKY PRODUCT SUMMARY VKA (V) VF (V) DIODE FORWARD VOLTAGE
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Si6821DQ
S-56954--Rev.
01-Mar-99
56954
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B-408 diode
Abstract: ic 4081 pin diagram 230v AC to 30V AC converter circuit diagram ic 4081 230v AC to 30V dC converter circuit diagram L9 zener 9.1 ac to dc converters adjustable to 48 vdc Pin Diagram of ic 4081 VB408 VB408-1
Text: VB408, VB 408B V B 408-1/ V B 408FI HIGH VOLTAGE LINEAR REGULATOR POWER I.C. T A R G ET DATA TYPE ^ V IN,OUT him VOUT 400 V 40 mA 1.25 to V ,n-30 V VB408 VB408-1 VB408FI VB408B • INPUT VOLTAGE UP TO 400 V DC OR 285 V RMS RECTIFIED ■ OUTPUT VOLTAGE ADJUSTABLE FROM 1.25
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VB408,
VB408B
VB408FI
VB408
VB408-1
VB408FI
VB408B,
B-408 diode
ic 4081 pin diagram
230v AC to 30V AC converter circuit diagram
ic 4081
230v AC to 30V dC converter circuit diagram
L9 zener 9.1
ac to dc converters adjustable to 48 vdc
Pin Diagram of ic 4081
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JY 222 M capacitor
Abstract: No abstract text available
Text: Find It By Series m in iR te l i niniB ag B/•Swail.N Surface M ount D escription P age N u m b er Q u ick V iew U s s is s s 6 0 0 -6 1 1206 to 1806 ^ eedthl" C apacitor 32 602 603 605 606 607 608 609 612 613 615 616 620 621 622 402 403 405 406 407 408
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Untitled
Abstract: No abstract text available
Text: FEB i 2 1993 yi/iyjxi>i/i 19-4725; Rev 0; 12/91 8-Channel/Dual 4-Channel High Perform ance CMOS Analog M ultiplexers _ General Description The D G 408/D G 409 are fa b rica te d with M axim ’s new im proved silicon gate process. These m uxes offer low on
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408/D
250ns
DG409
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B-408 diode
Abstract: No abstract text available
Text: _ SÌ4832DY Vishay Siliconix N-Ch 30-V D-S MOSFET With Schottky Diode New Product M OSFET PRODUCT SUMMARY Rds{on} (&) tD |A) 0.018 @ VGS= 10 V ±9 .0 0.028 @ VGS^ 4.5 V ±7.3 30 p\0 s & a SCHO TTKY PRODUCT SUMMARY Vos (V) V « ,w
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4832DY
S-56946--Rev.
23-Nov-98
S-56946--
B-408 diode
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M08-FET
Abstract: 5102 mosfet
Text: SÎ4833DY_ Vishay Siliconix P-Ch 30-V D-S MOSFET With Schottky Diode New Product M OSFET PRODUCT SUMM ARY V w tV ) r DS{on| i& \ I d (A) 0.085 @ V a s = “ 10 V ± 3 .5 0.180 @ V q S ss - 4 .5 V ± 2 .5 -3 0 p \o s SCHO TTKV PRODUCT SUMM ARY
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4833DY_
4833DY
S-56941--Rev
02-Nov-98
M08-FET
5102 mosfet
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Untitled
Abstract: No abstract text available
Text: SI6923DQ VISHAY Vishay Siliconix P-Ch 2.5-V G-S MOSFET With Schottky Diode New Product M O S FE T P R O D U C T S U M M A R Y VDS (V) r DS(ON) -2 0 I d (A) (& ) 0.050 @ VGS = -4 .5 V ±3 .5 0.085 @ VGS = -2 .5 V ±2 .7 S C H O TTK Y PRODUCT SUM M AR Y V k a (V)
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SI6923DQ
Si6923DQ
S-56941â
02-Nov-98
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Untitled
Abstract: No abstract text available
Text: SÌ4812DY Vishay Siliconix N-Ch 30-V D-S MOSFET With Schottky Diode New Product M OSFET PR OD UC T SU M M AR Y V o»M 30 Id {A) R d s (Om) (& l O.Otfi @ Vqq = 10 V ±9 .0 0.028 @ VGs ~ 4-5 V ±7 .3 p \0 s & SCHO TTKY PRODUCT SUMM ARY Voson V«o (V) DIODE FORWARD VOLTAGE
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4812DY
23-Nov-98
S-56946--
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Untitled
Abstract: No abstract text available
Text: Si4812DY VISHAY Vishay Siliconix N-Ch 30-V D-S MOSFET With Schottky Diode New Product M O S FE T P R O D U C T S U M M A R Y VDS (V) 30 r DS(ON) (& ) I d (A) 0.018 @ V GS = 10 V ±9 .0 0.028 @ VGS = 4.5 V ±7 .3 S C H O TTK Y PRODUCT SUM M ARY VSD (V) VDS (V)
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Si4812DY
S2SM735
DD17flflT
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Untitled
Abstract: No abstract text available
Text: SI6820DQ VISHAY Vishay Siliconix N-Ch, Reduced Qg MOSFET With Schottky Diode New Product M O S FE T P R O D U C T S U M M A R Y VDS V r DS(ON) 20 I d (A) (& ) 0.160 @ VGS = 4.5 V ±1 .9 0.260 @ VGS = 3.0 V ±1 .5 S C H O TTK Y PRODUCT SUM M AR Y V k a (V)
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SI6820DQ
Si6820DQ
S-56936â
23-Nov-98
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mosfet 408 80
Abstract: No abstract text available
Text: _ SÌ4810DY Vishay Siliconix N-Ch 30-V D-S MOSFET With Schottky Diode New Product M OSFET PRODUCT SUMM ARY V d* (VI 30 Rosjon ) (ß ) lo (A) 0,0135 @ V q S = 10 V ±10 0.020 @ VGS = 4.5 V ±8 p \0 s iÖ^ SCHO TTKY PRODUCT SUMM ARY
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4810DY
S-56946--
23-Nov-98
481QDY
S-56946--Rev,
mosfet 408 80
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Untitled
Abstract: No abstract text available
Text: SÏ4832DY - SNicönix N-Ch 30-V D-S MOSFET With Schottky Diode New Product M O SFET PRO DU CT SU M M AR Y V ds (V) r DS(ON) (-2) I d (A) 0.018 @ V GS = 10 V ± 9 .0 0.028 @ V GS = 4.5 V
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4832DY
S-56946--
ov-98
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Untitled
Abstract: No abstract text available
Text: SÏ4812DY - SNicönix N-Ch 30-V D-S MOSFET With Schottky Diode New Product M O SFET PRO DU CT SUM M ARY V ds (V) r DS(ON) (-2) Id (A) 0.018 @ V GS = 10 V ± 9 .0 0.028 @ V GS = 4.5 V
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4812DY
S-56946--
ov-98
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Untitled
Abstract: No abstract text available
Text: SI6820DQ - SNicönix N-Ch, Reduced Qg MOSFET With Schottky Diode New Product M O SFET PRO DU CT SU M M AR Y V ds V r DS(ON) (-2) I d (A) 0.160 @ V GS = 4.5 V ± 1 .9 0.260 @ V GS = 3.0 V
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SI6820DQ
S-56936--
ov-98
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