C5440
Abstract: ccs c program coding for relay implement codec G.711 pb110 cng engine ecu dsp processor Architecture of TMS320C54X G.711, G.723.1, G.726, G.728 digital modem v.92 v.90 G-165 SR-2275
Text: Product Bulletin GoldenPort TMS320C5440 VoIP Remote Access Server RAS Solution Texas Instruments GoldenPort RAS Solution is a complete Modem, Voice, and Fax solution for Universal Port applications. Using TI's TMS320C5440™ programmable DSP and Telogy Software™, this
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TMS320C5440
TMS320C5440TM
34bis
PB110
C5440
ccs c program coding for relay
implement codec G.711
cng engine ecu
dsp processor Architecture of TMS320C54X
G.711, G.723.1, G.726, G.728
digital modem v.92 v.90
G-165
SR-2275
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DDR200
Abstract: DDR266A DDR266B DDR333 K4H510838C-KCA0 K4H510838C-KCA2 K4H510838C-KCB0 K4H510838C-KCB3
Text: DDP 512Mb x8 DDR SDRAM DDR SDRAM Specification Version 0.0 This is to advise Samsung customers that in accordance with certain terms of an agreement, Samsung is prohibited from selling any DRAM products configured in "Multi-Die Plastic" format for use as components in general and scientific computers, such as mainframes, servers,
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512Mb
31/VREF-0
DDR200
DDR266A
DDR266B
DDR333
K4H510838C-KCA0
K4H510838C-KCA2
K4H510838C-KCB0
K4H510838C-KCB3
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PC2100-25330-B1
Abstract: HYS64D64020GU-7 25330 DDR200 DDR266A DDR266B HYS64D32000GU-7 PC2100 PC2100-20330-A1 PC2100-25330-A1
Text: HYS64/72D32000GU / HYS64/72D64020GU Unbuffered DDR-I SDRAM-Modules 2.5 V 184-pin Unbuffered DDR-I SDRAM Modules 256MB & 512MB Modules Preliminary Datasheet Rev. 0.99 • 184-pin Unbuffered 8-Byte Dual-In-Line DDR-I SDRAM non-parity and ECC-Modules for PC and Server main memory applications
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HYS64/72D32000GU
HYS64/72D64020GU
184-pin
256MB
512MB
MO-206a
PC2100-25330-B1
HYS64D64020GU-7
25330
DDR200
DDR266A
DDR266B
HYS64D32000GU-7
PC2100
PC2100-20330-A1
PC2100-25330-A1
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siemens modules GR 60 48 V 120 A
Abstract: PC100-222-620R CDC2510A HYS72V16200GR-8 HYS72V8200GR-8 HYS72V8201GR-8 JC42 HYS72V8200GR8
Text: 64MB, 128MB, 256MB & 512MB Density HYS72V8200GR-8 HYS72V8201GR-8 HYS72V16200GR-8 HYS72V32200GR-8 HYS72V32201GR-8 HYS72V64200GR-8 HYS72V64220GR-8 • 168 Pin JEDEC Standard, Registered 8 Byte Dual-In-Line SDRAM Module for PC and Server main memory applications
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128MB,
256MB
512MB
HYS72V8200GR-8
HYS72V8201GR-8
HYS72V16200GR-8
HYS72V32200GR-8
HYS72V32201GR-8
HYS72V64200GR-8
HYS72V64220GR-8
siemens modules GR 60 48 V 120 A
PC100-222-620R
CDC2510A
HYS72V16200GR-8
HYS72V8200GR-8
HYS72V8201GR-8
JC42
HYS72V8200GR8
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PC2100R-25330-B1
Abstract: pc2100r-25330 PC2100R-25330-A1 PC2100R-20330-A1 PC2100R-20330-B1 DDR200 DDR266A DDR266B MO-161 PC2100
Text: HYS 72Dxx0x0GR Registered DDR-I SDRAM-Modules 2.5 V 184-pin Registered DDR-I SDRAM Modules 256MB, 512MB & 1 GByte Modules Preliminary Datasheet Rev. 0.99 • 184-pin Registered 8-Byte Dual-In-Line DDR-I SDRAM Module for PC and Server main memory applications
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72Dxx0x0GR
184-pin
256MB,
512MB
MO-161
PC2100R-25330-B1
pc2100r-25330
PC2100R-25330-A1
PC2100R-20330-A1
PC2100R-20330-B1
DDR200
DDR266A
DDR266B
PC2100
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GS8600
Abstract: p2262 130NM cmos process parameters
Text: SPARC64 V Processor For UNIX Server Revision 1.0 August 2004 FUJITSU LIMITED Copyright 2004 Fujitsu Limited. All Rights Reserved. No part of this product or related documentation may be reproduced in any form by any means without prior written authorization of Fujitsu Limited, and its licensors, if any.
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SPARC64
ARC64
0-SPARC64V-pub
GS8600,
64-bit
SPARC64
db/sparc64
GS8600
p2262
130NM cmos process parameters
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Untitled
Abstract: No abstract text available
Text: HYS64/72D32000GU / HYS64/72D64020GU 2.5 V 184-pin Unbuffered DDR-I SDRAM Modules 256MB & 512MB Modules Preliminary Datasheet Rev. 0.95 • 184-pin Unbuffered 8-Byte Dual-In-Line DDR-I SDRAM non-parity and ECC-Modules for PC and Server main memory applications
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HYS64/72D32000GU
HYS64/72D64020GU
184-pin
256MB
512MB
MO-206a
MO-206a)
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PC200
Abstract: PC2100
Text: HYS64/72D32000GU / HYS64/72D64020GU 2.5 V 184-pin Unbuffered DDR-I SDRAM Modules 256MB & 512MB Modules Preliminary Datasheet Rev. 0.9 • 184-pin Unbuffered 8-Byte Dual-In-Line DDR-I SDRAM non-parity and ECC-Modules for PC and Server main memory applications
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HYS64/72D32000GU
HYS64/72D64020GU
184-pin
256MB
512MB
MO-206a
256Mbit
PC200
PC2100
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Untitled
Abstract: No abstract text available
Text: HYS 72Dxxx0GR Registered DDR-I SDRAM-Modules 2.5 V 184-pin Registered DDR-I SDRAM Modules 256MB, 512MB & 1 GByte Modules Preliminary Datasheet Rev. 0.95 • 184-pin Registered 8-Byte Dual-In-Line DDR-I SDRAM Module for PC and Server main memory applications
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72Dxxx0GR
184-pin
256MB,
512MB
MO-161
72Dxx0x0GR
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PC2100R-25330-A1
Abstract: PC2100R-25330-B1 PC2100R-20330-A1 pc2100r 25330 PC2100R-25330-C1 pc2100r-25330 PC1600R-20220-A1
Text: HYS 72Dxxx0GR Registered DDR-I SDRAM-Modules 2.5 V 184-pin Registered DDR-I SDRAM Modules 256MB, 512MB & 1 GByte Modules Preliminary Datasheet Rev. 0.98 • 184-pin Registered 8-Byte Dual-In-Line DDR-I SDRAM Module for PC and Server main memory applications
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72Dxxx0GR
184-pin
256MB,
512MB
256Mbit
66Lead
72Dxx0x0GR
PC200,
PC266A
PC2100R-25330-A1
PC2100R-25330-B1
PC2100R-20330-A1
pc2100r 25330
PC2100R-25330-C1
pc2100r-25330
PC1600R-20220-A1
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k4s510832c
Abstract: K4S510832C-KL
Text: K4S510832C CMOS SDRAM DDP 512Mbit SDRAM 16M x 8bit x 4 Banks Synchronous DRAM LVTTL Revision 0.2 Nov. 2001 Samsung shall not offer for sale or sell either directly or through and third-party proxy, and DRAM memory products that include "Multi-Die Plastic DRAM" for use as components in general and scientific computers such as, by way of example, mainframes, servers, work stations
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K4S510832C
512Mbit
A10/AP
k4s510832c
K4S510832C-KL
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HYS64D32000GU-7-B
Abstract: HYS64D32000GU-7-A HYS64D64020GU-7-A HYS64D32000GU-7 HYS64D64020GU-7 HYS72D64020GU-7-B HYS72D32000GU-7-A
Text: HYS64/72D32000/64020GU Unbuffered DDR-I SDRAM-Modules 2.5 V 184-pin Unbuffered DDR-I SDRAM Modules 256 MByte & 512 MByte Modules PC1600 & PC2100 • 184-pin Unbuffered 8-Byte Dual-In-Line DDR-I SDRAM non-parity and ECC-Modules for PC and Server main memory applications
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HYS64/72D32000/64020GU
184-pin
PC1600
PC2100
MO-206
25ies
L-DIM-184-9d
HYS64D32000GU-7-B
HYS64D32000GU-7-A
HYS64D64020GU-7-A
HYS64D32000GU-7
HYS64D64020GU-7
HYS72D64020GU-7-B
HYS72D32000GU-7-A
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pioneer PA 2030 A
Abstract: AD6521 GSM based motor control circuit diagram speed control of dc motor by using gsm gsm controlled dc motor speed control circuit AD6522 gsm based speed control of single phase induction motor Gsm based motor controlling speed control of induction motor by using gsm LMS adaptive filter model for FPGA
Text: DSP APPLICATIONS SECTION 9 DSP APPLICATIONS • High Performance Modems for Plain Old Telephone Service POTS ■ Remote Access Server (RAS) Modems ■ ADSL (Assymetric Digital Subscriber Line) ■ Digital Cellular Telephones ■ GSM Handset Using SoftFone Baseband Processor
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K4S511632D
Abstract: No abstract text available
Text: K4S511632D CMOS SDRAM DDP 512Mbit SDRAM 8M x 16bit x 4 Banks Synchronous DRAM LVTTL Revision 0.0 July. 2002 This is to advise Samsung customers that in accordance with certain terms of an agreement, Samsung is prohibited from selling any DRAM products configured in "Multi-Die Plastic" format for use as components in general and scientific computers, such as mainframes, servers,
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K4S511632D
512Mbit
16bit
K4S511632D
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PC1600r 20220 c1
Abstract: DDR200 DDR266A PC2100 PC2100R-20330-C1
Text: HYS 72Dxx0xxGR-7/8-B Registered DDR-I SDRAM-Modules 2.5 V 184-pin Registered DDR-I SDRAM Modules 256MB, 512MB &1GByte Modules PC1600 & PC2100 Preliminary Datasheet revision 0.91 • 184-pin Registered 8-Byte Dual-In-Line DDR-I SDRAM Module for PC and Server
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72Dxx0xxGR-7/8-B
184-pin
256MB,
512MB
PC1600
PC2100
MO-206
PC1600r 20220 c1
DDR200
DDR266A
PC2100
PC2100R-20330-C1
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PC1600r 20220 c1
Abstract: DDR200 DDR266A PC2100
Text: HYS 72Dxx0xxGR-7/8-B Registered DDR-I SDRAM-Modules 2.5 V 184-pin Registered DDR-I SDRAM Modules 256MB, 512MB &1GByte Modules PC1600 & PC2100 Preliminary Datasheet revision 0.9 • 184-pin Registered 8-Byte Dual-In-Line DDR-I SDRAM Module for PC and Server
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72Dxx0xxGR-7/8-B
184-pin
256MB,
512MB
PC1600
PC2100
MO-206
PC1600r 20220 c1
DDR200
DDR266A
PC2100
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K4S511632C
Abstract: No abstract text available
Text: K4S511632C CMOS SDRAM DDP 512Mbit SDRAM 8M x 16bit x 4 Banks Synchronous DRAM LVTTL Revision 0.1 Sept. 2001 This is to advise Samsung customers that in accordance with certain terms of an agreement, Samsung is prohibited from selling any DRAM products configured in "Multi-Die Plastic" format for use as components in general and scientific computers, such as mainframes, servers,
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K4S511632C
512Mbit
16bit
K4S511632C
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Untitled
Abstract: No abstract text available
Text: K4S510832B CMOS SDRAM DDP 512Mbit SDRAM 16M x 8bit x 4 Banks Synchronous DRAM LVTTL Revision 0.2 April 2001 This is to advise Samsung customers that in accordance with certain terms of an agreement, Samsung is prohibited from selling any DRAM products configured in "Multi-Die Plastic" format for use as components in general and scientific computers, such as mainframes, servers,
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K4S510832B
512Mbit
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K4S511632C
Abstract: samsung cmos dram 4m x 4
Text: K4S511632C CMOS SDRAM DDP 512Mbit SDRAM 8M x 16bit x 4 Banks Synchronous DRAM LVTTL Revision 0.1 Sept. 2001 Samsung shall not offer for sale or sell either directly or through and third-party proxy, and DRAM memory products that include "Multi-Die Plastic DRAM" for use as components in general and scientific computers such as, by way of example, mainframes, servers, work stations
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K4S511632C
512Mbit
16bit
A10/AP
K4S511632C
samsung cmos dram 4m x 4
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RA12
Abstract: No abstract text available
Text: K4S510832B CMOS SDRAM DDP 512Mbit SDRAM 16M x 8bit x 4 Banks Synchronous DRAM LVTTL Revision 0.2 April 2001 Samsung shall not offer for sale or sell either directly or through and third-party proxy, and DRAM memory products that include "Multi-Die Plastic DRAM" for use as components in general and scientific computers such as, by way of example, mainframes, servers, work stations
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K4S510832B
512Mbit
A10/AP
RA12
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Untitled
Abstract: No abstract text available
Text: Intel PCI 00 Approved 512 & 256 Megabyte Registered DIMM'S using Dense-Pac's Patented Stacked Memory devices for use in Intel® 440BX based Chip Set Nightshade & NightLlite motherboards See Intel’s web page for more information:
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OCR Scan
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PDF
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440BX
om/support/motherboards/server/n440bx/nbx
DPSD64MR72TW5-PC100
30A208-30
PC100
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DPSD32MR72RW5-PC100
Abstract: No abstract text available
Text: Intel PCI 00 Approved 256 MB Registered DIMM by Dense-Pac for use in Intel® 440BX AGP Chip Set (Nightshade motherboard) See Intel’s web page for more information: ORDER NOW! DPSD32MR72RW-PC100-CL3
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OCR Scan
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PDF
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440BX
om/support/motherboards/server/n440bx/nbx
DPSD32MR72RW-PC100-CL3
DPSD32MR72RW5-PC100
30A166-30
DPSD32MR72RW
5-PC100
PC100
DPSD32MR72RW5-PC100
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Untitled
Abstract: No abstract text available
Text: Intel PCI 00 Approved 512 & 256 Megabyte Registered DIMM'S using Dense-Pac's Patented Stacked Memory devices for use in Intel® 440BX based Chip Set Nightshade & NightLite motherboards See Intel’s web page for more information:
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OCR Scan
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PDF
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440BX
om/support/motherboards/server/n440bx/nbx
DPSD32MR72RW5-PC100
30A166-30
DPSD32MR72RW
5-PC100
PC100
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Untitled
Abstract: No abstract text available
Text: 3.3V 168 pin Registered SDRAM Modules HYS72V8200GR HYS72V16200GR HYS72V32200GR HYS72V32220GR HYS72V64200GR HYS72V128220GR 64MB, 128MB, 256MB, 512MB & 1GB Densities • 168 Pin JEDEC Standard, Registered 8 Byte Dual-ln-Line SDRAM Module for PC and Server main memory applications
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HYS72V8200GR
HYS72V16200GR
HYS72V32200GR
HYS72V32220GR
HYS72V64200GR
HYS72V128220GR
128MB,
256MB,
512MB
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