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    B2515L Price and Stock

    onsemi MBRB2515LT4G

    DIODE SCHOTTKY 15V 25A D2PAK
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    DigiKey MBRB2515LT4G Cut Tape 371 1
    • 1 $4.15
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    MBRB2515LT4G Digi-Reel 371 1
    • 1 $4.15
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    MBRB2515LT4G Reel 800
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    Newark MBRB2515LT4G Cut Tape 800
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    RS MBRB2515LT4G Bulk 10
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    Bristol Electronics MBRB2515LT4G 800
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    MBRB2515LT4G 111 2
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    Flip Electronics MBRB2515LT4G 160
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    Win Source Electronics MBRB2515LT4G 14,089
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    onsemi MBRB2515L

    DIODE SCHOTTKY 15V 25A D2PAK
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    DigiKey MBRB2515L Tube 50
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    Bristol Electronics MBRB2515L 9,655
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    Component Electronics, Inc MBRB2515L 36
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    Win Source Electronics MBRB2515L 9,300
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    onsemi MBRB2515LG

    DIODE SCHOTTKY 15V 25A D2PAK
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    Bristol Electronics MBRB2515LG 12
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    Rochester Electronics MBRB2515LG 121 1
    • 1 $1.36
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    Component Electronics, Inc MBRB2515LG 5
    • 1 $1.54
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    • 100 $1.15
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    onsemi MBRB2515LT4

    DIODE SCHOTTKY 15V 25A D2PAK
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    MBRB2515LT4 1,751
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    MBRB2515LT4 550 3
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    Win Source Electronics MBRB2515LT4 14,089
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    RECOM Power Inc R-78B2.5-1.5L

    DC DC CONVERTER 2.5V 3.75W
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    DigiKey R-78B2.5-1.5L Tube
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    Ozdisan Elektronik R-78B2.5-1.5L
    • 1 $10.69447
    • 10 $10.69447
    • 100 $9.99484
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    B2515L Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    B2515L

    Abstract: MBR2515L
    Text: MOTOROLA Order this document by MBR2515L/D SEMICONDUCTOR TECHNICAL DATA Advance Information SWITCHMODE Power Rectifier MBR2515L . . . employing the Schottky Barrier principle in a large metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide


    Original
    PDF MBR2515L/D MBR2515L B2515L MBR2515L

    MBR2515L

    Abstract: MBR2515LG B2515L diode B2515L
    Text: MBR2515L SWITCHMODEt Power Rectifier The MBR2515L employs the Schottky Barrier principle in a large metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use in low voltage, high frequency


    Original
    PDF MBR2515L MBR2515L MBR2515L/D MBR2515LG B2515L diode B2515L

    b2515l

    Abstract: No abstract text available
    Text: MBR2515L SWITCHMODEt Power Rectifier Features and Benefits • • • • • • Low Forward Voltage Low Power Loss/High Efficiency High Surge Capacity 100°C Operating Junction Temperature 25 A Total 12.5 A Per Diode Leg Pb−Free Packages are Available*


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    PDF MBR2515L MBR2515L/D b2515l

    Untitled

    Abstract: No abstract text available
    Text: MBR2515L SWITCHMODEt Power Rectifier Features and Benefits • • • • • • Low Forward Voltage Low Power Loss/High Efficiency High Surge Capacity 100°C Operating Junction Temperature 25 A Total Pb−Free Packages are Available* http://onsemi.com SCHOTTKY BARRIER


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    PDF MBR2515L MBR2515L/D

    B2515

    Abstract: B2515L MBR2515L MBR2515LG 100-C1210
    Text: MBR2515L SWITCHMODEt Power Rectifier Features and Benefits • • • • • • Low Forward Voltage Low Power Loss/High Efficiency High Surge Capacity 100°C Operating Junction Temperature 25 A Total Pb−Free Packages are Available* http://onsemi.com SCHOTTKY BARRIER


    Original
    PDF MBR2515L MBR2515L/D B2515 B2515L MBR2515L MBR2515LG 100-C1210

    Untitled

    Abstract: No abstract text available
    Text: B2515L Preferred Device SWITCHMODE Power Rectifier OR’ing Function Diode D2PAK Surface Mount Power Package The D2PAK Power Rectifier employs the Schottky Barrier principle in a large metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and


    Original
    PDF MBRB2515L MBRB2515CT/D

    B2515L

    Abstract: Single Schottky diode TO-220 1.0 ampere schottky power rectifier diode RECTIFIER DIODES ON Semiconductor DATA BOOK 81 210 W 20 marking CODE 91 MBR2515LG Rectifier 6 amp 200 volt rectifier diode 20 amp 800 volt MBR2515L
    Text: MBR2515L SWITCHMODEt Power Rectifier Features and Benefits • • • • • • Low Forward Voltage Low Power Loss/High Efficiency High Surge Capacity 100°C Operating Junction Temperature 25 A Total Pb−Free Packages are Available* http://onsemi.com SCHOTTKY BARRIER


    Original
    PDF MBR2515L MBR2515L/D B2515L Single Schottky diode TO-220 1.0 ampere schottky power rectifier diode RECTIFIER DIODES ON Semiconductor DATA BOOK 81 210 W 20 marking CODE 91 MBR2515LG Rectifier 6 amp 200 volt rectifier diode 20 amp 800 volt MBR2515L

    B2515L

    Abstract: dmbr2515l diode B2515L
    Text: MBR2515L SWITCHMODE Power Rectifier . . . employing the Schottky Barrier principle in a large metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use in low voltage, high frequency


    Original
    PDF MBR2515L B2515L O-220 MBR2515L/D MBR2515L B2515L dmbr2515l diode B2515L

    B2515L

    Abstract: diode B2515L
    Text: B2515L Preferred Device SWITCHMODE Power Rectifier OR’ing Function Diode D2PAK Surface Mount Power Package http://onsemi.com The D2PAK Power Rectifier employs the Schottky Barrier principle in a large metal-to-silicon power diode. State-of-the-art


    Original
    PDF MBRB2515L B2515L diode B2515L

    delta rectifier heat dissipation

    Abstract: B2515L MBRB2515L SMD310 make delta rectifier B25-15 B2515
    Text: MOTOROLA Order this document by B2515L/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet SWITCHMODE Power Designer's B2515L Rectifier OR'ing Function Diode Motorola Preferred Device D2PAK Surface Mount Power Package The D2PAK Power Rectifier employs the Schottky Barrier principle in a large


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    PDF MBRB2515L/D MBRB2515L delta rectifier heat dissipation B2515L MBRB2515L SMD310 make delta rectifier B25-15 B2515

    B2515L

    Abstract: MBRB2515L MBRB2515LT4 SMD310
    Text: B2515L Preferred Device SWITCHMODE Power Rectifier OR'ing Function Diode D2PAK Surface Mount Power Package The D2PAK Power Rectifier employs the Schottky Barrier principle in a large metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and


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    PDF MBRB2515L r14525 MBRB2515L/D B2515L MBRB2515L MBRB2515LT4 SMD310

    B2515L

    Abstract: No abstract text available
    Text: MBR2515L SWITCHMODEt Power Rectifier The MBR2515L employs the Schottky Barrier principle in a large metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use in low voltage, high frequency


    Original
    PDF MBR2515L BRD8011/D. MBR2515L/D MBR2515L B2515L

    Untitled

    Abstract: No abstract text available
    Text: B2515L Preferred Device SWITCHMODE Power Rectifier OR’ing Function Diode D2PAK Surface Mount Power Package The D2PAK Power Rectifier employs the Schottky Barrier principle in a large metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and


    Original
    PDF MBRB2515L

    B2515L

    Abstract: MBR2515LG MBR2515L
    Text: MBR2515L SWITCHMODEt Power Rectifier Features and Benefits • • • • • • Low Forward Voltage Low Power Loss/High Efficiency High Surge Capacity 100°C Operating Junction Temperature 25 A Total Pb−Free Packages are Available* SCHOTTKY BARRIER RECTIFIER


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    PDF MBR2515L B2515L MBR2515LG MBR2515L

    B2515L

    Abstract: MBR2515L B2515
    Text: MBR2515L SWITCHMODE Power Rectifier . . . employing the Schottky Barrier principle in a large metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use in low voltage, high frequency


    Original
    PDF MBR2515L r14525 MBR2515L/D B2515L MBR2515L B2515

    B2515LG

    Abstract: No abstract text available
    Text: B2515L Preferred Device SWITCHMODEt Power Rectifier ORing Function Diode D2PAK Surface Mount Power Package The D2PAK Power Rectifier employs the Schottky Barrier principle in a large metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal


    Original
    PDF MBRB2515L MBRB2515L/D B2515LG

    B2515L

    Abstract: B25-15 MBR2515L diode B2515L
    Text: MBR2515L SWITCHMODE Power Rectifier . . . employing the Schottky Barrier principle in a large metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use in low voltage, high frequency


    Original
    PDF MBR2515L r14525 MBR2515L/D B2515L B25-15 MBR2515L diode B2515L

    U840 diode motorola

    Abstract: motorola u860 diode DIODE u1560 b2045 aka u1560 DIODE u860 diode u1560 diode U3J U820 diode fast recovery diode ses5001
    Text: DL151/D Rev. 3, Nov-2000 Rectifier Device Data Rectifier Device Data DL151/D Rev. 3, Oct–2000  SCILLC, 2000 Previous Edition  1995 “All Rights Reserved’’ This book presents technical data for ON Semiconductor’s broad line of rectifiers. Complete specifications are provided in


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    PDF DL151/D Nov-2000 r14525 U840 diode motorola motorola u860 diode DIODE u1560 b2045 aka u1560 DIODE u860 diode u1560 diode U3J U820 diode fast recovery diode ses5001

    B2515LG

    Abstract: B2515L B2515L AKA B2515 MBRB2515L MBRB2515LG MBRB2515LT4 MBRB2515LT4G
    Text: B2515L Preferred Device SWITCHMODEt Power Rectifier ORing Function Diode D2PAK Surface Mount Power Package The D2PAK Power Rectifier employs the Schottky Barrier principle in a large metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal


    Original
    PDF MBRB2515L MBRB2515L/D B2515LG B2515L B2515L AKA B2515 MBRB2515L MBRB2515LG MBRB2515LT4 MBRB2515LT4G

    b2515

    Abstract: 2515L diode B2515L
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information SW ITCHMODE P o w e r R e c tifie rs M B R 2515L . . em ploying the Schottky Barrier principle in a large m e ta l-to -s ilic o n power diode. S ta te -o f-th e -a rt geom etry features epitaxial construction with oxide


    OCR Scan
    PDF 2515L b2515 2515L diode B2515L

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by M BR2515L/D MBR2515L Advance Information SWITCHMODE Pow er R ectifiers . . employing the Schottky Barrier principle in a large metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide


    OCR Scan
    PDF BR2515L/D MBR2515L 2PHX33776R-0 MBR2515L/D

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by B2515L/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet SW ITCH MODE™ Power R ectifier OR’ing Function Diode M B R B 2515L Motorola Preferred Device D2PAK Surface Mount Power Package The D2 PAK Power Rectifier employs the Schottky Barrier principle in a large


    OCR Scan
    PDF MBRB2515L/D 2515L 418B-02

    hall marking code A04

    Abstract: M143206EVK differences uc3842a uc3842b toshiba satellite laptop battery pinout 2N3773 audio amplifier diagram toshiba laptop battery pack pinout BC413 motorola transistor sj 5812 M68HC705X16 ABB inverter motor fault code
    Text: Introduction Advanced Digital r i Consumer Products L-l Microcomputer Components [2 Logic: Standard, Special p , and Programmable I-5* Analog and Interface Integrated Circuits Semiconductor r= Components Group L5 Product Literature and r~ Technical Training L”


    OCR Scan
    PDF 2PHX14226-31 hall marking code A04 M143206EVK differences uc3842a uc3842b toshiba satellite laptop battery pinout 2N3773 audio amplifier diagram toshiba laptop battery pack pinout BC413 motorola transistor sj 5812 M68HC705X16 ABB inverter motor fault code

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA B2515L Designer’s Data Sheet SWITCHMODE™ Power Rectifier OR’ing Function Diode D2PAK Surface Mount Power Package The D2PAK Power Rectifier employs the Schottky Barrier principle in a large metal-to-silicon power diode. State-of-the-art geometry features epitaxial


    OCR Scan
    PDF MBRB2515L