b3 smd transistor
Abstract: smd diode B3 HP4192A HP4192 smd b3 smd transistor b3 B3 smd b3 smd diode smd resistance 35uH
Text: SMD Data Line EMI Filter – SBCB Series Electrical Characteristics KHz 0.6V Inductance L(µH) DC Resistance (Ω) Max 100 25~50 0.07 Test Frequency Part Number SBCB1104RIT-330-B3-N Test Instruments：HP4192A LF Impedance Analyzer SBCB1104RI-330-B3-N 40 35
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SBCB1104RIT-330-B3-N
InstrumentsHP4192A
SBCB1104RI-330-B3-N
b3 smd transistor
smd diode B3
HP4192A
HP4192
smd b3
smd transistor b3
B3 smd
b3 smd diode
smd resistance
35uH
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Untitled
Abstract: No abstract text available
Text: ELECTRICAL SOLUTIONS A. System Overview Locking Fork Terminals, Nylon Insulated – Non-Funnel Entry Type PN-LF B1. Cable Ties B2. Cable Accessories B3. Stainless Steel Ties • Continuously molded design provides reliable, consistent performance through the applicator for a high quality termination
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86A/B
CD-800-3
CD-800-2
CD-800-1
CA-800/EZ
PNF18-6LF-3K
PNF18-6LFW-3K
PNF18-8LF-3K
PNF18-10LF-3K
PNF14-6LF-3K
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b3 lf series
Abstract: B3-1205S
Text: B3 LF Series 2W Isolated DC/DC Converter Features: Input Filter With Internal Capacitor Input / Output Isolation 1K Vdc Or 3K Vdc H Low Ripple And Noise 100% Burn-In Un-Regulated type Net Weight : 2.2 g / 2.7 g Typical 7 Pin SIL / 14 Pin DIL Package Custom Design Available
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B3-0505SS
B3-0505DS
b3 lf series
B3-1205S
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B3-1215S
Abstract: 0505s B3-1205S B3-1205SSLF B3-0512DS diode b3 B3-0505SS B3-0505DS B3-0512SS B3-1205SS
Text: B3 LF Series 2 Watt Isolated DC-DC Converter Single / Dual Output 1. Features λ 7 Pin SIL/ 14 Pin DIL Package λ Low Ripple and Noise λ Input / Output Isolation 1K Vdc or 3K Vdc λ 100% Burn-In λ Input Filter with Internal Capacitor λ Custom Design Available
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Spec-061003
B3-1215S
0505s
B3-1205S
B3-1205SSLF
B3-0512DS
diode b3
B3-0505SS
B3-0505DS
B3-0512SS
B3-1205SS
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Feeling Technology
Abstract: FM8P56EP lvdt DC-20 PHB6 FM8P56ED
Text: FEELING TECHNOLOGY FM8P54/56 EPROM/ROM-Based 8-Bit Microcontroller Series Devices Included in this Data Sheet: ‧ FM8P54E/56E : EPROM devices ‧ FM8P54/56 : Mask ROM devices FEATURES ‧ Only 42 single word instructions ‧ All instructions are single cycle except for program branches which are two-cycle
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FM8P54/56
FM8P54E/56E
13-bit
DC-20
DC-100
FM8P54/54E
FM8P56/56E
49/FM8P54/56
Feeling Technology
FM8P56EP
lvdt
PHB6
FM8P56ED
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Untitled
Abstract: No abstract text available
Text: DW-20W/30W Series 2:1 or 4:1 Wide Input range 20W/30W DC-DC Converter Typical product tabulates / 典型产品列表 输入电压范围 Input voltage range 型号 TYPE DW30-□S3V3B3 DW30-□S05B3 DW30-□S09B3 DW30-□S12B3 DW30-□S15B3 DW30-□S24B3 DW30-□S48B3
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DW-20W/30W
0W/30W
DW30-â
S05B3
S09B3
S12B3
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DC-20
Abstract: No abstract text available
Text: CHENGPIN CP8056 EPROM/ROM-Based 8-Bit Microcontroller Series Devices Included in this Data Sheet: • CP8056P : EPROM devices • CP8056P : Mask ROM devices FEATURES • Only 42 single word instructions • All instructions are single cycle except for program branches which are two-cycle
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CP8056
CP8056P
13-bit
DC-20
DC-100
45/CP8056
CP8056H
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K8D3216UBC-pi07
Abstract: K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm
Text: Product Selection Guide Memory and Storage April 2005 MEMORY AND STORAGE SECTION A DRAM DDR2 SDRAM DDR SDRAM SDRAM RDRAM NETWORK DRAM MOBILE SDRAM GRAPHICS DDR SDRAM DRAM ORDERING INFORMATION FLASH NAND, OneNAND, NOR FLASH NAND FLASH ORDERING INFORMATION SRAM
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BR-05-ALL-002
K8D3216UBC-pi07
K5E5658HCM
KAD070J00M
KBH10PD00M
K5D1257ACM-D090000
samsung ddr2 ram MTBF
KBB05A500A
K801716UBC
k5d1g13acm
k5a3281ctm
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Untitled
Abstract: No abstract text available
Text: HVC369B Variable Capacitance Diode for VCO ADE-208-446A Z Rev 1 Features • • • • Low capacitance and to be usable at GHz. High capacitance ratio. (n = 2.3 min) Low series resistance. (r s = 0.5Ω max) Ultra small Flat Package (UFP) is suitable for surface mount design.
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HVC369B
ADE-208-446A
HVC369B
470MHz
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P15J
Abstract: TE-K22 lf375 335k 400v lf335 LF-310KA LF-315 LF-305 LF-310G TE-K60
Text: Casing Type Metal box LF Series Inverter-Use Type TÜV Rheinland Model Rated voltage AC/DC V Rated current AC/DC (A) Withstanding voltage 1 min., line to ground AC (V) Insulation resistance 500VDC 1 min., line to ground (M⏲) min. Leakage current 250V/60Hz,
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500VDC
50V/60Hz,
LF-305
LF-310
LF-315
LF-320
LF-330
LF-340
LF-350
LF-360
P15J
TE-K22
lf375
335k 400v
lf335
LF-310KA
LF-315
LF-305
LF-310G
TE-K60
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AT8PS56P
Abstract: AT8PS56 Feeling Technology FM8P56S
Text: AT8PS54/S56 EPROM/ROM-Based 8-Bit Microcontroller Series Devices Included in this Data Sheet: ‧ AT8PS54E/S56E : EPROM devices ‧ AT8PS54/S56 : Mask ROM devices FEATURES ‧ ‧ ‧ ‧ ‧ ‧ ‧ ‧ Only 42 single word instructions All instructions are single cycle except for program branches which are two-cycle
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AT8PS54/S56
AT8PS54E/S56E
13-bit
DC-20
DC-100
AT8PS54/S54E
AT8PS56/S56E
46/AT8PS54/S56
AT8PS56P
AT8PS56
Feeling Technology
FM8P56S
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lvdt
Abstract: DC-20 at8p
Text: CP80S54/56 EPROM/ROM-Based 8-Bit Microcontroller Series Devices Included in this Data Sheet: ‧ CP80S54E/S56E : EPROM devices ‧ CP80S54/S56 : Mask ROM devices FEATURES ‧ ‧ ‧ ‧ ‧ ‧ ‧ ‧ ‧ ‧ ‧ ‧ ‧ ‧ ‧ ‧ ‧ ‧ ‧ ‧ ‧ ‧
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CP80S54/56
CP80S54E/S56E
CP80S54/S56
13-bit
DC-20
DC-100
CP80S56/S56E
CP80S54/S54E
46/CP80S54/S56
lvdt
at8p
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FM8P5X
Abstract: ACC REGISTER FM8P57ED FM8P57EP
Text: FEELING TECHNOLOGY FM8P5X EPROM/ROM-Based 8-Bit Microcontroller Series Devices Included in this Data Sheet: • FM8P54E/55E/56E/57E : EPROM devices • FM8P54/55/56/57 : Mask ROM devices FEATURES • Only 42 single word instructions • All instructions are single cycle except for program branches which are two-cycle
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FM8P54E/55E/56E/57E
FM8P54/55/56/57
13-bit
DC-20
DC-100
FM8P54/54E
FM8P55/55E
FM8P56/56E
FM8P57/57E
FM8P57EM
FM8P5X
ACC REGISTER
FM8P57ED
FM8P57EP
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mc700p
Abstract: MC784P ADC 570 MC884P
Text: DUAL HAIF-SHIFI REGISTER \ PLASTIC M R T L MC700P/800P series MC784P • MC884P 10? ?* : H2 I ; RI 02Í i 14 n? B3 ÍR 2 12' R2 T w o h a lf sh itt re g is te rs in a s in g le p acka g e . Ea ch is a b is ta b le sto ra g e ele m e n t. E.g. in fo rm a tio n co m m g
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MC784P
MC884P
MC700P/800P
mc700p
MC784P
ADC 570
MC884P
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LB-603 FP
Abstract: No abstract text available
Text: 7fl2flcH ci 001b43fl 324 Light Emitting Diodes High efficiency, three-digit numeric displays LB-603 FP Series •External dimensions Unit: mm iolf •Features 1) Height of character: 14.3 mm. 2) The package surface is coated black and the segments are col
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001b43fl
LB-603
LB-603VF
LB-603MF
LB-603VP
LB-603MP
LB-603 FP
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12 pin 7 segment display layout
Abstract: 24 pin 16 segment display layout LB603MF 6 pin 7 segment display layout LB-603 LB-603MF LB-603MP LB-603VF LB-603VP red led 24 pin 4 digit 7 segment display
Text: 7fl2flcm Light Emitting Diodes GOlbMBfl 324 High efficiency, three-digit numeric displays LB-603 FP Series The LB-603 FP series w ere de sig n e d to meet the need for m ulti-digit num er ►External dim ensions Unit: mm ic d is p la y s . T hese LED n u m e ric d is
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LB-603
oth-25
LB-603VF
LB-603VP
LB-603MF
LB-603MP
Dlb43ti
12 pin 7 segment display layout
24 pin 16 segment display layout
LB603MF
6 pin 7 segment display layout
LB-603MP
LB-603VP
red led 24 pin 4 digit 7 segment display
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zener 5.1 B2
Abstract: LM136-2.5
Text: v G en era l S e m i c o n d u c t o r _ GZ Series Zener Diodes Vz Range 2.0 to 36V Power Dissipation 500mW Features DO-2Q4AH DO-35 Glass • Silicon Planar Power Zener Diodes. • Voltage spectrum from 2.2V to 38V
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500mW
DO-35
D7/10K
20K/box
D8/10K
zener 5.1 B2
LM136-2.5
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Untitled
Abstract: No abstract text available
Text: -Y LB-403 F1 Series — K /L ig h t Emitting Diodes LB-403 F1 Series m 3 High-Efficiency Numeric Displays 1^ •J fi'+ ä H /D im e n s io n s Unit : mm S gftW UC G aAsP on GaP ( i i S ^ O £ 10 m m , 3 tii<75 L E D I S i R ^ ¡OsZ'to Using an emitting material of GaAsP on
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LB-403
LB-403
LB-403VF10
LB-403D
LB-403MF1O
LB-403MF1
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LB-403MF1
Abstract: No abstract text available
Text: Light Emitting Diodes High efficiency, three-digit numeric displays LB-403 F1 Series The LB-403 F1 series were designed to meet the need for multi-digit numer ic displays. These LED num eric dis plays use GaAsP on GaP for the emit tin g m aterial with th e e xce p tio n of
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LB-403
LB-403VF1
LB-403DF1
LB-403MF1
LB-403MF1
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12 pin 7 segment display layout
Abstract: LB-403MF1 E3F3 LB-403 16 pin 13 segment LED 12 pin 4 digit 7 segment display layout -CD-5461A
Text: Light Emitting Diodes High efficiency, three-digit numeric displays LB-403 F1 Series The LB-403 F1 series were designed to meet the need for multi-digit numer ic displays. These LED num eric dis plays use GaAsP on GaP for the emit ting m aterial w ith the e xce p tio n of
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LB-403
LB-403VF1
LB-403DF1
LB-403MF1
12 pin 7 segment display layout
E3F3
16 pin 13 segment LED
12 pin 4 digit 7 segment display layout -CD-5461A
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red led 24 pin 4 digit 7 segment display
Abstract: 24 pin 7 segment 4 DIGIT display layout LB-403MD LB-403MN LB-403YD LB403MN 6 pin 7 segment display layout LB403VN 12 pin 3 segment display layout LB-403
Text: Light Emitting Diodes High efficiency, three-digit numeric displays LB-403 DN Series ^External dimensions Unit: mm •Features 1) Height of character: 10.16mm. 2) Long 9 mm leads (minimum) on bottom of case. 3) High efficiency reflectors are used to achieve a bright, clear display.
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LB-403
LB-403VD
LB-403VN
LB-403DD
LB-403YD
LB-403MD
LB-40ne
red led 24 pin 4 digit 7 segment display
24 pin 7 segment 4 DIGIT display layout
LB-403MN
LB403MN
6 pin 7 segment display layout
LB403VN
12 pin 3 segment display layout
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ae ls 403
Abstract: No abstract text available
Text: 'f LB-403 DN Series K /L ig h t Emitting Diodes LB-403 m 3 High-Efficîency Numeric Displays DN Series • 0 / D i m e n s i o n s U n it : m m LB403D/N '> D - X ü , ropStC iäJfejj. L X r m i i L tc o 10.16mm, 3 t f f < 0 L E D » ? ^ i B 7 t o Series LB-403D/N provides 3-digit
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LB-403
LB-403
LB403D/N
LB-403D/N
LB-403VDO
LB-403VNO
LB-403DDO
LB-403DNO
LB-403YDO
LB-403MDG
ae ls 403
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LB-403MD
Abstract: No abstract text available
Text: Light Emitting Diodes High efficiency, three-digit numeric displays LB-403 DN Series The LB-403 DN series were designed •E x te rn a l dim ensions Unit: mm to meet the need for m ulti-digit num er ic d is p la y s . T h e se LED n u m e ric d is plays use GaAsP on GaP fo r the em it
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LB-403
LB-403DD
LB-403YD
LB-403VD
LB-403VN
LB-403MD
LB-403MN
001b435
LB-403MD
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Zener Diode LT 432
Abstract: 8.2 B2 ZENER diode marking code 682 zener diode 82 b3 marking 222 zener diode 4.7 B1 zener diode 273-0333 zener diode B2 bt 784 zener 5.1 B2
Text: I ADE-208-130 B Z HZM-N Series Silicon Epitaxial Planar Zener Diode for Stabilizer HITACHI Features Rev. 2 May 1994 Outline • Wide spectrum from 1.9 V through 38 V of zener voltage provide flexible application. • MPAK Package is suitable for high density
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ADE-208-130
SC-59A
Zener Diode LT 432
8.2 B2 ZENER
diode marking code 682
zener diode 82 b3
marking 222 zener diode
4.7 B1 zener diode
273-0333
zener diode B2
bt 784
zener 5.1 B2
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