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    MMT4261

    Abstract: No abstract text available
    Text: SC 34 -CDIODES/OPTO} 6 3 6 7 2 55 MOTOROLA SC DE I b3Li7555 34C CD I O D E S / O P T O 0D3fia3M 38234 T 2- MICRO-T continued) S D 3/-/7 MMT4261 — PNP RF TRANSISTOR • designed for high-speed, low-level switching applications, where high-density packaging is required


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    b3b75SS MMT4261 MMT4261 PDF

    MMBT5551LT1

    Abstract: motorola S MMBT5551 G1 MMBT5550
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA High Voltage T ransistors MMBT5550LT1 MMBT5551LT1* NPN Silicon ‘Motorola Preferred Device 2 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage v CEO 140 Vdc Collector-Base Voltage VCBO 160 Vdc


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    MMBT5550LT1 MMBT5551LT1* --236AB) MMBT5551LT1 MMBT5551LT1 motorola S MMBT5551 G1 MMBT5550 PDF