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    MTP30N06el

    Abstract: 30N06E 30N06EL
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet M TP 30N 06E L Logic Level TMOS L2TMOS E-FET™ Pow er Field E ffect Transistor N-Channel Enhancement-Mode Silicon Gate This advanced E-FET is an L^TMOS power MOSFET designed to withstand high energy in the avalanche and commutation


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    b3b7P54 MTP30N06EL MTP30N06el 30N06E 30N06EL PDF