AZ41B49
Abstract: AZ41B29 ADS41B29 ADS41B29IRGZR ADS41B49 QFN-48
Text: ADS41B29 ADS41B49 www.ti.com SBAS486D – NOVEMBER 2009 – REVISED DECEMBER 2010 14-/12-Bit, 250MSPS, Ultralow-Power ADC with Analog Buffers Check for Samples: ADS41B29, ADS41B49 FEATURES DESCRIPTION • The ADS41B29/B49 are members of the ultralow-power ADS4xxx analog-to-digital converter
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ADS41B29
ADS41B49
SBAS486D
14-/12-Bit,
250MSPS,
ADS41B29,
ADS41B29/B49
AZ41B49
AZ41B29
ADS41B29
ADS41B29IRGZR
ADS41B49
QFN-48
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Untitled
Abstract: No abstract text available
Text: ADS41B29 ADS41B49 www.ti.com SBAS486D – NOVEMBER 2009 – REVISED DECEMBER 2010 14-/12-Bit, 250MSPS, Ultralow-Power ADC with Analog Buffers Check for Samples: ADS41B29, ADS41B49 FEATURES DESCRIPTION • The ADS41B29/B49 are members of the ultralow-power ADS4xxx analog-to-digital converter
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ADS41B29
ADS41B49
SBAS486D
14-/12-Bit,
250MSPS,
ADS41B29,
ADS41B29/B49
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AZ41B49
Abstract: No abstract text available
Text: ADS41B29 ADS41B49 www.ti.com SBAS486D – NOVEMBER 2009 – REVISED DECEMBER 2010 14-/12-Bit, 250MSPS, Ultralow-Power ADC with Analog Buffers Check for Samples: ADS41B29, ADS41B49 FEATURES DESCRIPTION • The ADS41B29/B49 are members of the ultralow-power ADS4xxx analog-to-digital converter
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ADS41B29
ADS41B49
SBAS486D
14-/12-Bit,
250MSPS,
ADS41B29,
ADS41B49:
14-Bit,
250MSPS
AZ41B49
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AZ41B29
Abstract: AZ41B49
Text: ADS41B29 ADS41B49 www.ti.com SBAS486E – NOVEMBER 2009 – REVISED JULY 2012 14-/12-Bit, 250MSPS, Ultralow-Power ADC with Analog Buffers Check for Samples: ADS41B29, ADS41B49 FEATURES DESCRIPTION • The ADS41B29/B49 are members of the ultralowpower ADS4xxx analog-to-digital converter ADC
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ADS41B29
ADS41B49
SBAS486E
14-/12-Bit,
250MSPS,
ADS41B29,
ADS41B49:
14-Bit,
250MSPS
AZ41B29
AZ41B49
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AZ41B49
Abstract: AZ41B29 ADS41B26
Text: ADS41B29 ADS41B49 www.ti.com SBAS486E – NOVEMBER 2009 – REVISED JULY 2012 14-/12-Bit, 250MSPS, Ultralow-Power ADC with Analog Buffers Check for Samples: ADS41B29, ADS41B49 FEATURES DESCRIPTION • The ADS41B29/B49 are members of the ultralowpower ADS4xxx analog-to-digital converter ADC
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ADS41B29
ADS41B49
SBAS486E
14-/12-Bit,
250MSPS,
ADS41B29,
ADS41B49:
14-Bit,
250MSPS
AZ41B49
AZ41B29
ADS41B26
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Untitled
Abstract: No abstract text available
Text: ADS41B29 ADS41B49 www.ti.com SBAS486E – NOVEMBER 2009 – REVISED JULY 2012 14-/12-Bit, 250MSPS, Ultralow-Power ADC with Analog Buffers Check for Samples: ADS41B29, ADS41B49 FEATURES DESCRIPTION • The ADS41B29/B49 are members of the ultralowpower ADS4xxx analog-to-digital converter ADC
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ADS41B29
ADS41B49
SBAS486E
14-/12-Bit,
250MSPS,
ADS41B29,
ADS41B29/B49
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Untitled
Abstract: No abstract text available
Text: ADS41B29 ADS41B49 www.ti.com SBAS486D – NOVEMBER 2009 – REVISED DECEMBER 2010 14-/12-Bit, 250MSPS, Ultralow-Power ADC with Analog Buffers Check for Samples: ADS41B29, ADS41B49 FEATURES DESCRIPTION • The ADS41B29/B49 are members of the ultralow-power ADS4xxx analog-to-digital converter
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ADS41B29
ADS41B49
SBAS486D
14-/12-Bit,
250MSPS,
ADS41B29,
ADS41B49:
14-Bit,
250MSPS
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CCD MARKING
Abstract: No abstract text available
Text: IPA075N15N3 G Ie\Q "%&$!"#TM3 Power-Transistor Product Summary Features EMOWMSQ BM^WUZS V 9H - J R 9H"[Z#$YMd /&- Y" I9 ,+ 6 Q . 5BI <? G ? > B5C9CD 1>3 5 R 9H"[Z# Q T ? @5B1D9>7 D5=@5B1D EB5 Q ) 2 6B55 <514 @<1D9 >7 + ? " , 3 ? =@<9 1>D Q * E1<96954 13 3 ? B49>7 D? $
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IPA075N15N3
CCD MARKING
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b49 diode
Abstract: A1703 mss60 MSS40 MSS50
Text: MSS CR Series Silicon Schottky Crossoverr Quad Diodes Description Features The Aeroflex / Metelics MSS CR Series of Schottky crossover quad diodes are fabricated on N-Type epitaxial substrates using proprietary processes that yield the highest FCOs in the industry.
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MIL-PRF-19500
MIL-PRF-38534
A17032
b49 diode
A1703
mss60
MSS40
MSS50
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MSPD2018
Abstract: m21 sot23 transistor MSPD1012-H50 MSPD1000-E50/E50SM mpn7620-et47 MSPD1012-E50 mpn7610 mbd1057 MMD0840 MPN7345
Text: Microwave Diodes Schottky Varactor PIN Step Recovery Planar Tunnel MOS / MIS Capacitors Short Form Catalog 2006 About Aeroflex / Metelics The Experience and Resources to Deliver the Technological Edge In many electronics applications, there is simply no margin for
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A17084
MSPD2018
m21 sot23 transistor
MSPD1012-H50
MSPD1000-E50/E50SM
mpn7620-et47
MSPD1012-E50
mpn7610
mbd1057
MMD0840
MPN7345
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IPB065N15N3
Abstract: 5F040 ED 05 Diode marking EB5
Text: IPB065N15N3 G "%&$!"# 3 Power-Transistor Product Summary Features Q ' 3 81>>5< >? B=1<<5F5< Q H3 5<<5>D71D5 3 81B75 HR 9H"[Z# @B? 4E3 D & V 9H -( J R , ? >=1H-( .&- Y" I9 )+( 6 Q. 5BI <? G ? > B5C9CD 1>3 5 R 9H"[Z# Q T ? @5B1D9>7 D5=@5B1D
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IPB065N15N3
7865AE5
5F040
ED 05 Diode
marking EB5
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IPD320N20N3
Abstract: marking EB5
Text: IPD320N20N3 G TM "%&$!"# 3 Power-Transistor Product Summary Features Q ' 3 81>>5< >? B=1<<5F5< Q H3 5<<5>D71D5 3 81B75 HR 9H"[Z# @B? 4E3 D & V 9H *( J R 9H"[Z#$YMd +* Y" I9 +, 6 Q. 5BI <? G ? > B5C9CD 1>3 5 R 9H"[Z# Q T ? @5B1D9>7 D5=@5B1D EB5
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IPD320N20N3
7865AE5
marking EB5
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D1D5B
Abstract: B175D DIODE ED 99
Text: IPP070N08N3 G IPI070N08N3 G IPB067N08N3 G "%&$!"# 3 Power-Transistor Product Summary Features V 9H Q #451<6? B8978 6B5AE5>3 I CG9D389 >7 1>4 CI>3 B53 R , ? >=1H, & Q @D9=9J54 D53 8>? <? 7I 6? B 3 ? >F5BD5BC I9 0( J .&/ Y" 0( 6 Q H3 5<<5>D71D5 3 81B75 HR 9H"[Z# @B? 4E3 D ( &
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IPP070N08N3
IPI070N08N3
IPB067N08N3
D1D5B
B175D
DIODE ED 99
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marking 9D
Abstract: G973 marking eb5 EB5 MARKING
Text: IPB260N06N3 G IPP260N06N3 G Ie\Q "%&$!"# 3 Power-Transistor Product Summary Features Q #451<6? B8978 6B5AE5>3 I CG9D389 >7 1>4 CI>3 B53 Q @D9=9J54 D53 8>? <? 7I 6? B 3 ? >F5BD5BC V 9H .( J R 9H"[Z#$YMd *. Y" I9 */ 6 Q H3 5<<5>D71D5 3 81B75 HR 9H"[Z# @B? 4E3 D ( &
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IPB260N06N3
IPP260N06N3
65AE5
marking 9D
G973
marking eb5
EB5 MARKING
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DIODE marking S6 89
Abstract: diode ED 1B DSA0032870 D542 BI55 marking EB diode eb 1b 4240R
Text: IPB023N06N3 G Ie\Q "%&$!"# 3 Power-Transistor Product Summary Features Q #451<6? B8978 6B5AE5>3 I CG9D389 >7 1>4 CI>3 B53 Q @D9=9J54 D53 8>? <? 7I 6? B 3 ? >F5BD5BC V 9H .( J R 9H"[Z#$YMd *&+ Y" I9 ,( 6 Q H3 5<<5>D71D5 3 81B75 HR 9H"[Z# @B? 4E3 D ( &
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IPB023N06N3
DIODE marking S6 89
diode ED 1B
DSA0032870
D542
BI55
marking EB diode eb 1b
4240R
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B55Q
Abstract: No abstract text available
Text: IPB108N15N3 G IPP111N15N3 G IPI111N15N3 G TM "%&$!"# 3 Power-Transistor Product Summary Features Q ' 3 81>>5< >? B=1<<5F5< Q H3 5<<5>D71D5 3 81B75 HR 9H"[Z# @B? 4E3 D & V 9H -( J R , ? >=1H-( )(&0 Y" 0+ I9 6 Q. 5BI <? G ? > B5C9CD 1>3 5 R 9H"[Z#
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IPB108N15N3
IPP111N15N3
IPI111N15N3
B55Q
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75D diode
Abstract: No abstract text available
Text: IPP100N08N3 G IPI100N08N3 G IPB097N08N3 G "%&$!"# 3 Power-Transistor Product Summary Features V 9H Q #451<6? B8978 6B5AE5>3 I CG9D389 >7 1>4 CI>3 B53 R , ? >=1H, & Q @D9=9J54 D53 8>? <? 7I 6? B 3 ? >F5BD5BC I9 0( J 1&/ Y" /( 6 Q H3 5<<5>D71D5 3 81B75 HR 9H"[Z# @B? 4E3 D ( &
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IPP100N08N3
IPI100N08N3
IPB097N08N3
75D diode
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IPD600N25N3 G
Abstract: No abstract text available
Text: IPD600N25N3 G TM "%&$!"# 3 Power-Transistor Product Summary Features Q ' 3 81>>5< >? B=1<<5F5< Q H3 5<<5>D71D5 3 81B75 HR 9H"[Z# @B? 4E3 D & V 9H *-( J R 9H"[Z#$YMd .( Y" I9 *- 6 Q. 5BI <? G ? > B5C9CD 1>3 5 R 9H"[Z# Q T ? @5B1D9>7 D5=@5B1D EB5
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IPD600N25N3
7865AE5
IPD600N25N3 G
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Untitled
Abstract: No abstract text available
Text: IPB042N10N3 G IPI045N10N3 G IPP045N10N3 G "%&$!"# 3 Power-Transistor Product Summary Features V 9H Q ' 3 81>>5< >? B=1<<5F5< R , ? >=1H- Q H3 5<<5>D71D5 3 81B75 HR 9H"[Z# @B? 4E3 D ( & I9 ( J ,&* Y" )( 6 Q. 5BI <? G ? > B5C9CD 1>3 5 R 9H"[Z#
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IPB042N10N3
IPI045N10N3
IPP045N10N3
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4b 5c marking
Abstract: PG-TO-263-7
Text: IPB030N08N3 G "%&$!"# 3 Power-Transistor Product Summary Features Q #451<6? B8978 6B5AE5>3 I CG9D389 >7 1>4 CI>3 B53 Q @D9=9J54 D53 8>? <? 7I 6? B=? D? B4B9F5 1@@<931D9 ? >C V 9H 0( J R 9H"[Z#$YMd +&( Y" I9 .( 6 Q H3 5<<5>D71D5 3 81B75 HR 9H"[Z# @B? 4E3 D ( &
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IPB030N08N3
4b 5c marking
PG-TO-263-7
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marking eb5
Abstract: diode marking eb5 IPP139N08N3 EB5 MARKING marking G9 i95B
Text: IPP139N08N3 G IPI139N08N3 G IPB136N08N3 G "%&$!"# 3 Power-Transistor Product Summary Features 0 V 9H Q #451<6? B8978 6B5AE5>3 I CG9D389 >7 R , ? >=1H, & Q ( @D9=9J54 D53 8>? <? 7I 6? B 3 ? >F5BD5BC J +&. Y" ,- I9 6 Q H3 5<<5>D71D5 3 81B75 HR 9H"[Z# @B? 4E3 D ( &
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IPP139N08N3
IPI139N08N3
IPB136N08N3
65AE5
marking eb5
diode marking eb5
EB5 MARKING
marking G9
i95B
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b49 diode
Abstract: No abstract text available
Text: SCHOTTKY CROSSOVER Q UAD i High F r e q u e n c y M ix e r Series To 26.5 GHz metelics C O R PO R ATIO N a ' . * . ’ FEATURES • • • • • • • Extremely Low Junction Capacitance Monolithic Construction Small Physical Size Good Matching of Diode Junctions
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OCR Scan
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PDF
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75mWmax.
MSS-60,
CR45-B49
CR53-B49
b49 diode
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Untitled
Abstract: No abstract text available
Text: TRANSISTOR MODULES- SQQ300BA60 U L;E 76102 M ) is a Darlington power transistor module with a , high speed, high power Darlington transistor. The transistor has a reverse paralleled fast recovery diode (trr: 200ns). The mounting base of the module is electrically isolated
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OCR Scan
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PDF
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SQQ300BA60
200ns)
hrEfe750
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b49 diode
Abstract: ESJC04-05 ESJC04 F151 T760 micro wave oven esjc0405
Text: ESJC 0 4 5kv : Outline Drawings HIGH VOLTAGE SILICON DIODE ESJC04(*, ESJC04 is high reliability and high current capability type resin molded high voltage silicon diode which is sealed a multilayed mesa type silicon chip by epoxy resin. Features • 'm Small size
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OCR Scan
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PDF
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ESJC04
EaTS30S3
I95t/R89
Shl50
b49 diode
ESJC04-05
F151
T760
micro wave oven
esjc0405
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