Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    B5D113G Search Results

    B5D113G Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    A1567

    Abstract: NDB7060L NDP7060L transistor b35 A-1567
    Text: Na t i o n a I Semiconductor'“ June 1996 NDP7060L/ NDB7060L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These logic level N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS


    OCR Scan
    NDP7060L/NDB7060L bS0113D A1567 NDB7060L NDP7060L transistor b35 A-1567 PDF

    NDT014L

    Abstract: MOC3
    Text: & June 1996 N ational Semiconductor PRELIMINARY " NDT014L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel logic level enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS


    OCR Scan
    NDT014L L5D1130 NDT014L MOC3 PDF

    BCW31

    Abstract: BCW32 BCW33 BCW71
    Text: S e m i c o n d u c t o r “ BCW31 BCW32 BCW33 SOT-23 BCW31 / BCW32 / BCW33 & Discrete POWER & Signal Technologies National B Mark: D1 / D21 D3 NPN General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 300 mA. Sourced from Process 10. See


    OCR Scan
    BCW31 BCW32 BCW33 OT-23 BCW71 BCW32 BCW33 b5Ol13D PDF

    2N3563

    Abstract: se5020 MPS6544 MPS-6544 SE5023 2N347B 2n3600 tis86 MPS6547 2N2857
    Text: NPN Transistors VCES* VCBO V Min Vceo (V) Min v EBO (V) Min 2N2857 TO-72 30 15 2.5 2N3478 TO-72 30 15 ' CB0 Vcr <"A) @ “ Max 11 *>FE @ >C & Vce Min Max (mA) (V) 10 15 30 2 20 1 25 150 150 3 2 VCE(SAT) VßE(SAT) . (V) @ (V) & Max Min Max < "*> Cob/Cfo (PF)


    OCR Scan
    2N2857 2N347B 2N3600 2N3932 2N3933 2N4259 MPSH34 TIS86 TIS87 MPS6540 2N3563 se5020 MPS6544 MPS-6544 SE5023 MPS6547 PDF

    NDH831N

    Abstract: No abstract text available
    Text: National Semiconductor~ July 1 9 9 6 NDH831N N-Channef Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.


    OCR Scan
    NDH831N 125-C bSD1130 NDH831N PDF

    TOKO A 50 GTE

    Abstract: NR421 88-108 rf amplifier TO82 TRANSISTOR
    Text: SAC D I bSD1130 ODBSbGi NATL SEPIICON] {DISCRETE} 6 50 113 0 NATL SEMICOND, Z 28C DISCRETE) 35609 National CL Semiconductor CM *• OC NR421(NPN) VHF amplifier/FM converter transistor j features ■ 0.65pF typical feedback capacitance for excellent ■


    OCR Scan
    NR421 150mV 800KHz 100f/V/M 280JUV/M 10KHz: -28dB 15KHz TOKO A 50 GTE 88-108 rf amplifier TO82 TRANSISTOR PDF