A1567
Abstract: NDB7060L NDP7060L transistor b35 A-1567
Text: Na t i o n a I Semiconductor'“ June 1996 NDP7060L/ NDB7060L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These logic level N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS
|
OCR Scan
|
NDP7060L/NDB7060L
bS0113D
A1567
NDB7060L
NDP7060L
transistor b35
A-1567
|
PDF
|
NDT014L
Abstract: MOC3
Text: & June 1996 N ational Semiconductor PRELIMINARY " NDT014L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel logic level enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS
|
OCR Scan
|
NDT014L
L5D1130
NDT014L
MOC3
|
PDF
|
BCW31
Abstract: BCW32 BCW33 BCW71
Text: S e m i c o n d u c t o r “ BCW31 BCW32 BCW33 SOT-23 BCW31 / BCW32 / BCW33 & Discrete POWER & Signal Technologies National B Mark: D1 / D21 D3 NPN General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 300 mA. Sourced from Process 10. See
|
OCR Scan
|
BCW31
BCW32
BCW33
OT-23
BCW71
BCW32
BCW33
b5Ol13D
|
PDF
|
2N3563
Abstract: se5020 MPS6544 MPS-6544 SE5023 2N347B 2n3600 tis86 MPS6547 2N2857
Text: NPN Transistors VCES* VCBO V Min Vceo (V) Min v EBO (V) Min 2N2857 TO-72 30 15 2.5 2N3478 TO-72 30 15 ' CB0 Vcr <"A) @ “ Max 11 *>FE @ >C & Vce Min Max (mA) (V) 10 15 30 2 20 1 25 150 150 3 2 VCE(SAT) VßE(SAT) . (V) @ (V) & Max Min Max < "*> Cob/Cfo (PF)
|
OCR Scan
|
2N2857
2N347B
2N3600
2N3932
2N3933
2N4259
MPSH34
TIS86
TIS87
MPS6540
2N3563
se5020
MPS6544
MPS-6544
SE5023
MPS6547
|
PDF
|
NDH831N
Abstract: No abstract text available
Text: National Semiconductor~ July 1 9 9 6 NDH831N N-Channef Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.
|
OCR Scan
|
NDH831N
125-C
bSD1130
NDH831N
|
PDF
|
TOKO A 50 GTE
Abstract: NR421 88-108 rf amplifier TO82 TRANSISTOR
Text: SAC D I bSD1130 ODBSbGi NATL SEPIICON] {DISCRETE} 6 50 113 0 NATL SEMICOND, Z 28C DISCRETE) 35609 National CL Semiconductor CM *• OC NR421(NPN) VHF amplifier/FM converter transistor j features ■ 0.65pF typical feedback capacitance for excellent ■
|
OCR Scan
|
NR421
150mV
800KHz
100f/V/M
280JUV/M
10KHz:
-28dB
15KHz
TOKO A 50 GTE
88-108 rf amplifier
TO82 TRANSISTOR
|
PDF
|