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    B7 TRANSISTOR Search Results

    B7 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    B7 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    P82B715TD

    Abstract: 82B715 P82B715PN P82B715 P82B96 PCA9515 PCA9516 10XI2C P4-11
    Text: Philips Semiconductors P82B715 I2C Bus Extender Chip P8 7 2B Description 15 The 82B715 is an analog bipolar integrated circuit intended for application in I2C bus systems. 2 P8 2 P8 B7 B7 While retaining all the operating modes and features of the I2C system it permits extension of the practical separation distance


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    P82B715 82B715 400pF 611672/FP/2pp/1k P82B715TD P82B715PN P82B715 P82B96 PCA9515 PCA9516 10XI2C P4-11 PDF

    transistor 2N2222 PHILIPS

    Abstract: 2N2222 82B715 P82B715 P82B715PN P82B715TD P82B96 PCA9515 PCA9516
    Text: Philips Semiconductors P82B715 I2C Bus Extender Chip P8 7 2B Description 15 The 82B715 is an analog bipolar integrated circuit intended for application in I2C bus systems. 2 P8 2 P8 B7 B7 15 While retaining all the operating modes and features of the I2C system it permits extension of the practical separation distance


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    P82B715 82B715 400pF XXXXXX/FP/2pp/1101 transistor 2N2222 PHILIPS 2N2222 P82B715 P82B715PN P82B715TD P82B96 PCA9515 PCA9516 PDF

    Untitled

    Abstract: No abstract text available
    Text: LA-B7 Series 1t.2 09 .40 ~ 10.16 (2.29) L I r Dimensions are for reference use only. Contact IERC tor dimensions with tolerances or standard part drawings LA-B2 Series ~ '{J 100 110 ~ LATO127B2CB - w/TIP-29C ~ 80 60 70 TRANSISTOR DESCRIPTION OF CURVES 1Z


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    LATO127B2CB w/TIP-29C O-220) PDF

    siemens simatic op17 manual

    Abstract: SIMATIC Field PG IPC547D Siemens s7 1200 manual IPC427C SIWATOOL RS232 Cable IPC677C siemens a5e00 MTBF SIEMENS electric motor S7-200 cpu 215
    Text: Siemens AG 2013 Products for Totally Integrated Automation SIMATIC Catalog ST 70 Edition 2013 Answers for industry. © Siemens AG 2013 Related catalogs Industrial Communication SIMATIC NET IK PI E86060-K6710-A101-B7-7600 SIMATIC HMI / ST 80/ST PC PC-based Automation


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    E86060-K6710-A101-B7-7600 80/ST E86060-K4680-A101-B9-7600 E86060-K4678-A111-B8-7600 E86060-K2410-A111-A8-7600 E86060-K8310-A101-A8-7600 E86060-K6850-A101-C3 P4-7600 siemens simatic op17 manual SIMATIC Field PG IPC547D Siemens s7 1200 manual IPC427C SIWATOOL RS232 Cable IPC677C siemens a5e00 MTBF SIEMENS electric motor S7-200 cpu 215 PDF

    MC100E163

    Abstract: MC100E163FN MC100E163FNR2 MC10E163 MC10E163FN MC10E163FNR2
    Text: MC10E163, MC100E163 5VĄECL 2ĆBit 8:1 Multiplexer The MC10E/100E163 contains two 8:1 multiplexers with differential outputs and common select inputs. The select inputs SEL0, 1, 2 control which one of the eight data inputs (A0 – A7, B0 – B7) is propagated to the output.


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    MC10E163, MC100E163 MC10E/100E163 MC10E163FN EIA/JESD78 r14525 MC10E163/D MC100E163 MC100E163FN MC100E163FNR2 MC10E163 MC10E163FN MC10E163FNR2 PDF

    MC100E163

    Abstract: MC100E163FN MC100E163FNR2 MC10E163 MC10E163FN MC10E163FNR2
    Text: MC10E163, MC100E163 5VĄECL 2ĆBit 8:1 Multiplexer The MC10E/100E163 contains two 8:1 multiplexers with differential outputs and common select inputs. The select inputs SEL0, 1, 2 control which one of the eight data inputs (A0 – A7, B0 – B7) is propagated to the output.


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    MC10E163, MC100E163 MC10E/100E163 MC10E163FN EIA/JESD78 r14525 MC10E163/D MC100E163 MC100E163FN MC100E163FNR2 MC10E163 MC10E163FN MC10E163FNR2 PDF

    Untitled

    Abstract: No abstract text available
    Text: MC10E163, MC100E163 5V ECL 2-Bit 8:1 Multiplexer The MC10E/100E163 contains two 8:1 multiplexers with differential outputs and common select inputs. The select inputs SEL0, 1, 2 control which one of the eight data inputs (A0 − A7, B0 − B7) is propagated to the output.


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    MC10E163, MC100E163 MC10E/100E163 MC10E163FN PLCC-28 BRD8011/D. AN1405/D AN1406/D AN1503/D AN1504/D PDF

    Untitled

    Abstract: No abstract text available
    Text: MC10E163, MC100E163 5V ECL 2-Bit 8:1 Multiplexer The MC10E/100E163 contains two 8:1 multiplexers with differential outputs and common select inputs. The select inputs SEL0, 1, 2 control which one of the eight data inputs (A0 − A7, B0 − B7) is propagated to the output.


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    MC10E163, MC100E163 MC10E/100E163 MC10E163FN PLCC-28 r14525 MC10E163/D PDF

    BFR94

    Abstract: BFR94A
    Text: Philips Sem iconductors bbS3^31 b7=5 • APX Product spe cifica tion NPN 3.5 GHz wideband transistor BFR94A N AMER PHILIPS/DISCRETE DESCRIPTION bTE ]> PINNING NPN resistance-stabilized transistor in a SOT122E capstan envelope. PIN 1 collector It features extremely low cross


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    BFR94A OT122E BFR94A BFR94. Q031flfl3 BFR94 PDF

    Untitled

    Abstract: No abstract text available
    Text: B7 9-9 7 2N3993, 2N3993A P-CHANNEL SILICON JUN CTIO N FIELD-EFFECT TRANSISTOR Absolute maximum ratings at TA = 2 5 'C • CHOPPERS • HIGH SPEED COMMUTATORS Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current Continuous Device Power Dissipation


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    2N3993, 2N3993A 2N3993 0Q00727 PDF

    Transistor 8c4

    Abstract: amplifier TRANSISTOR 12 GHZ js t31 sA 673 transistor TRANSISTOR 618 transistor 1248 BFQ33C TRANSISTOR 12 GHZ GQH543T TRANSISTOR BO 345
    Text: Philips Sem iconductors Product specification BFQ33C NPN 12 GHz wideband transistor PHILIPS INT ERNATIONAL DESCRIPTION SbE ]> 711DÔ5t. G Ü H 5 4 3 T 5 b7 • P H I N PINNING NPN transistor in hermetically-sealed, sub-miniature, SOT173 and SOT173X micro-slripline envelopes, primarily


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    BFQ33C 711Dfi5t. GQH543T OT173 OT173X OT173X. Transistor 8c4 amplifier TRANSISTOR 12 GHZ js t31 sA 673 transistor TRANSISTOR 618 transistor 1248 BFQ33C TRANSISTOR 12 GHZ TRANSISTOR BO 345 PDF

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors ^ A U E • bbS 3 T 31 0 0 2 b 017 bb^ ■ APX R PHILIPS/DISCRETE NPN high voltage transistor FEATURES Product specification b7 E PZTA44; PZTA45 PIN CONFIGURATION • High voltage • High current. DESCRIPTION c High voltage NPN transistor in a


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    PZTA44; PZTA45 OT223 OT223 PZTA44 PDF

    SVT60-5

    Abstract: 2N5326 OTC2220 OTC2420 OTC242Q svt80 SVT60
    Text: b7^asaa 4flE D OPTEK TECHNOLOGY INC oaoiBfit, I OTK sst ü g jjU H b K Product Bulletin OTC2420 August 1990 " T Z G - »«1 High Speed NPN Switching Transistor Die Type OTC242Q 80V, 5A Applications • Low Voltage Inverters • Pulse Amplifiers • Base Drive Circuits


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    OTC2420 OTC242Q OTC2220 2420-80L 2420-60L 2420-80H 2420-60H 500mA 2N4305-2N4311, SVT60-5 2N5326 OTC2220 svt80 SVT60 PDF

    2SC2116

    Abstract: TRANSISTOR S 813
    Text: ^j3yNPNx^5>^T b7^-tm^yvx5> »ILICON NPN EPITAXIAL PLANAR TRANSISTOR 2 2116 sc TENTATIVE O VHF~UHFffi#*Ji<gffi O VHF~UHF Low Noise Amplifier Application • 'J' S W 11 S • Mini-Package 2.2mm0 —a- KJg 2.2mm0mold type MAXIMUM RATINGS T a = 25°C) CHARACTERISTIC SYMBOL RATING


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    2sc2116 500MHz 2SC2116 TRANSISTOR S 813 PDF

    BFQ290

    Abstract: BFQ291
    Text: Prelim inary specification P hilips Sem iconductors -3 3 -S 7 PNP HDTV video transistor PH IL I P S I N T E R N A T I O N A L SbE ]> BFQ290 711Dfl2h 00 45 b7 3 5T7 PINNING FEATURES DESCRIPTION PIN • High breakdown voltages • Low output capacitance 1 collector


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    -33-s BFQ290 711Dfl2h 0045b73 BFQ291. BFQ290 OT172A1 MBC869 OT172A1. BFQ291 PDF

    Untitled

    Abstract: No abstract text available
    Text: DTD123EK/DTD123ES/DTD123EF DTD123EL/DTD123EA/DTD123EV / T ransistors DTD123EK/DTD123ES/DTD123EF DTD123EL/DTD123EA/DTD123EV JO, Vr • • V: v qi -r 7 sv JS tartiK h 7 > y ^ ^ b7 > y xy ^/T ran sisto r Switch Digital Trasnistors (Includes Resistors) /Dim ensions (Unit : mm)


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    DTD123EK/DTD123ES/DTD123EF DTD123EL/DTD123EA/DTD123EV DTD123E PDF

    sem 2106

    Abstract: bux13
    Text: I MOTORGLA SC X S T R S /R 12E D F I k 3 b7 2 S4 0 0 0 4 =52*1 3 | MOTOROLA SEM ICO N DUCTO R BUX13 TECHNICAL DATA 15 AMPERES SWITCHMODE* SERIES NPN SILICON POWER TRANSISTOR NPN SILICON POWER METAL TRANSISTOR . . . designed for high speed, high voltage, high power applications.


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    BUX13 AN415A) sem 2106 bux13 PDF

    2sd1503

    Abstract: 2SD1506
    Text: ROHM CO 40E LTD 7 a 2 â cn ci D ODDSÔÔT 1 BRHN 2SD1506 h 7 > y ^ $ / T ransistors -7 ^ 3 3 - 0 7 2SD1503 I N P y ' J - 1> b7 > y Z $ N Freq. P ow er Amp. Epitaxial Planar NPN Silicon Transistor • ÿfïïi'Î&IS/Dimensions Unit : mm


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    2SD1506 2SD1503 2SB1065. 2sd1503 2SD1506 PDF

    2SC4672

    Abstract: No abstract text available
    Text: h ~ 7 > y 3 > $ / T ransistors 2SC4672 i t ’ ^ y T fr -f Is - j - M NPN y ‘j 3 > Epitaxial Planar NPN Silicon Transistor 2SC 4672 b7> Freq. Power Amp. • ft* • £tfl£\t~j&III/Dimensions Unit : mm 1 ) V c e (sat) V ce (sat)= 0.35V (Max.) l.6±0.l


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    2SC4672 SC-62 PDF

    Untitled

    Abstract: No abstract text available
    Text: P h ilip s S e m icon du ctors • bbSB'lBl DDSM'IST ^b7 H A P X N ANER PHILIPS/DISCRETE b?E D' NPN general purpose transistor FE A T U R E S Product specification BC846W; BC847W; BC848W PIN CONFIGURATION • S- mini package. S i _ EL DESCRIPTION NPN transistor in a plastic SOT323


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    BC846W; BC847W; BC848W OT323 MBC67 BC846W: BC846AW BC846BW BC847W: PDF

    mje 3003

    Abstract: mje 1303 transistor Bf 444 369-42 BFT25A 433-2 npn sot23 1303 DDE537A transistor SOT23 4d Philips FA 291
    Text: Philips Semiconductors b b 5 3 ci 3 1 N AMER DDE5 3 bb 003 ^lA PX P H ILIP S /D IS C R E TE Product specification b7 E NPN 5 GHz wideband transistor FEATURES • c BFT25A PINNING Low current consumption 100 nA - 1 mA • Low noise figure • Gold metallization ensures


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    bb53ci31 DDE53bb BFT25A BFT25A mje 3003 mje 1303 transistor Bf 444 369-42 433-2 npn sot23 1303 DDE537A transistor SOT23 4d Philips FA 291 PDF

    philips HFE 4541

    Abstract: BFT25A transistor BF 502 BFS25A B 0934 transistor BF 52 Transistor BF 479 t
    Text: Philips Sem iconductors bbS 3 T 31 N AMER 0 0 2 5 2 7 7 T O fl ^M APX P H IL IP S /D IS C R E T E Product specification b7 E NPN 5 GHz wideband transistor FEATURES BFS25A PIN CONFIGURATION PINNING • Low current consumption PIN • Low noise figure DESCRIPTION


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    D02S277 BFS25A OT323 kBCB70 OT323. philips HFE 4541 BFT25A transistor BF 502 BFS25A B 0934 transistor BF 52 Transistor BF 479 t PDF

    Untitled

    Abstract: No abstract text available
    Text: Prelim inary specification P h ilip s S e m icon du ctors -3 3 -S 7 PNP HDTV video transistor PHILIPS INTERNATIONAL SbE » 711DflSh D D M S b7 3 ST7 « P H I N PINNING FE A T U R E S DESCRIPTION PIN • High breakdown voltages 1 collector • High gain bandwidth product


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    BFQ290 711DflSh BC369 T172A BFQ290 OT172A1 PDF

    Untitled

    Abstract: No abstract text available
    Text: UMB9N/IMB9A b ÿ ' s y Z Ç /Transistors UMB9N IMB9A 7 -f V U - T 7 K5 ~ ;i/ K t-V W 7./Isolated Mini-Mold Device V 'J =l>b7>i/7.2 X y ? 4 7 Epitaxai Planar PNP Silicon Transistor Includes Resistors) •f h 7 Kv-f/^/Inverter Driver i+Jfi^Sill/Dim ensions (Unit : mm)


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    SC-70) SC-59) -3-g05 200mW 200mW PDF