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    Untitled

    Abstract: No abstract text available
    Text: O K I Semiconductor MSM27C201ZB 262,144-Word x 8-Bit One Time PROM DESCRIPTION The MSM27C201ZB is a 2 Mb electrically Programmable Read-Only Memory organized as 262,144 w ord x 8 bits. The MSM27C201ZB operates on a single 5 V pow er supply and is TTL compatible. Since the


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    MSM27C201ZB 144-Word MSM27C201ZB 32pin 32-pin PDF

    Untitled

    Abstract: No abstract text available
    Text: E2D0017-27-42 O K I Semiconductor M S M 6652/53/54/55/56-xxx, M SM 6652A/53A/ 54A/55A/56A/58A-xxx, MSM66P54-XX, MSM66P56-xx Under development , MSM6650 Internal Mask ROM Voice Synthesis 1C, Internal One-Time-Programmable (OTP) ROM Voice Synthesis 1C, External ROM Drive Voice Synthesis 1C


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    E2D0017-27-42 6652/53/54/55/56-xxx, 652A/53A/ 4A/55A/56A/58A-xxx, MSM66P54-XX, MSM66P56-xx MSM6650 MSM6650 MSM6375 theMSM6650familymembersoffer PDF

    54e4

    Abstract: No abstract text available
    Text: 4bE O K I D • b ? B 4 2 4 0 ÜÜÜTb' I S 1 ^ 7 « O K I J O K I SEMI CONDUCTOR GROUP semiconductor MSC2320A-XXYS9 r - v r - 2 3 262, 144 BY 36BIT DYNAM IC RAM MODULE GENERAL DESCRIPTION The Oki M SC 2320A-XXY S9 is a fu lly decoded, 2 6 2 ,1 4 4 w ords X 36 bit CMOS dynam ic random


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    MSC2320A-XXYS9 36BIT 320A-XXY 51256JS SC2320A-XXYS9 m////77///////////////f f7711 b754S40 54e4 PDF

    TAA 840

    Abstract: MSM51256
    Text: 4bE O K I D • b ? B 4 2 4 0 ÜÜÜTb' I S 1 ^ 7 « O K I J O K I SEMI CONDUCTOR GROUP semiconductor MSC2320A-XXYS9 r - v r - 2 3 262, 144 BY 36BIT DYNAM IC RAM MODULE GENERAL DESCRIPTION The Oki M SC 2320A-XXY S9 is a fu lly decoded, 2 6 2 ,1 4 4 w ords X 36 bit CMOS dynam ic random


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    B4240 MSC2320A-XXYS9 36BIT MSM514256AJS) MSM51256JS) MSM511000AJS; msc2320A-xxys9 t-46-23-17 TAA 840 MSM51256 PDF

    transistor w16

    Abstract: No abstract text available
    Text: O K I Semiconductor MSM5 11665A/AL 65,536-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WRITE PER BIT DESCRIPTION The MSM511665A/AL is a new generation dynamic RAM organized as 65,536-word x 16-bit. The technology used to fabricate the MSM511664A/AL is OKI's CMOS silicon gate process technology.


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    MSM511665A/AL 536-Word 16-Bit MSM511665A/ 16-bit. MSM511664A/AL cycles/32ms transistor w16 PDF

    Untitled

    Abstract: No abstract text available
    Text: O K I Semiconductor MSM5298A 68-DOT C O M M O N DRIVER GENERAL DESCRIPTION T he M SM 5298AGS is a d o t m atrix LCD co m m o n d riv e r LSI w h ich is fab ricated b y lo w p o w e r CM O S m etal gate technology. T his LSI consists of 68-bit b id irectio n al sh ift register, 68-bit level


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    MSM5298A 68-DOT 5298AGS 68-bit 5298AGSs b754S40 PDF

    Untitled

    Abstract: No abstract text available
    Text: O K I Semiconductor MSM27C431AZB 524,288-Word x 8-Bit Low-Voltage One Time PROM DESCRIPTION The MSM27C431AZB is a 4 Mb electrically Programmable Read-Only Memory organized as 524,288 words x 8 bits. The MSM27C431AZB operates on a single 3.3 V power supply and is TTL compatible. Since


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    MSM27C431AZB 288-Word MSM27C431AZB MSM27C431 32-pin MSM27C421ZB) PDF

    DU9 308

    Abstract: 32-PIN MSM5117900-70 MSM5117900-80
    Text: O K I Semiconductor MSM5117900 2,097,152-Word x 9-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The M SM 5117900 is a new generation D ynam ic RAM organized as 2,097,152-w ord x 9-bit configuration. The technology used to fabricate the M SM 5117900 is OKI's CMOS silicon gate process technology.


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    MSM5117900 152-Word MSM5117900 cycles/32ms 32PIN SOJ32-P-4QO 42PIN DU9 308 32-PIN MSM5117900-70 MSM5117900-80 PDF