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    STMicroelectronics STP6NB80FP

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    Bristol Electronics STP6NB80FP 7
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    ComSIT USA STP6NB80FP 676
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    STMicroelectronics STP4NB80FP

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    ComSIT USA STP4NB80FP 180
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    Chip 1 Exchange STP4NB80FP 396
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    STMicroelectronics STP5NB80FP

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    ComSIT USA STP5NB80FP 148
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    B80FP Datasheets Context Search

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    STP4NB80

    Abstract: No abstract text available
    Text: STP4NB80 B80FP N - CHANNEL 800V - 3 iî - 4A - TO -220/T0220FP PowerMESH MOSFET TYPE V S TP4N B80 STP 4N B80FP • . . . . dss 800 V 800 V R D S o n Id 3.3 Q. 3.3 n 4 A 4 A TYPICAL RDS(on) = 3 £1 EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED


    OCR Scan     		PDF STP4NB80 STP4NB80FP -220/T0220FP B80FP STP4NB80/FP O-22QFP STP4NB80

    Untitled

    Abstract: No abstract text available
    Text: STP3NB80 B80FP N - CHANNEL 800V - 4.6Î2 - 2.6A - TO-220/TO-220FP PowerMESH MOSFET TYPE S TP3N B80 STP3N B80FP • . . . . V dss RDS on Id 800 V 800 V < 6.5 Q. < 6.5 Q. 2.6 A 2.6 A(ÙÙ) TYPICAL R D S (on) = 4.6 EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED


    OCR Scan     		PDF STP3NB80 STP3NB80FP O-220/TO-220FP B80FP STP3NB80/FP O-22QFP

    Untitled

    Abstract: No abstract text available
    Text: STB4NB80 N - CHANNEL 800V - 3G - 4A - TO-220/TO-220FP PowerMESH MOSFET PRELIMINARY DATA TYPE V dss STB 4N B80 S TB 4N B80FP • . . . . 800 V 800 V RDS on 3.3 3.3 a a Id 4 A 4 A TYPICAL RDS(on) = 3 EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED


    OCR Scan     		PDF STB4NB80 O-220/TO-220FP B80FP O-262

    Untitled

    Abstract: No abstract text available
    Text: STP6NB80 B80FP N - CHANNEL 800V -1.6 iî - 5.7A - T0-220/T0-220FP _ PowerMESH MOSFET PRELIMINARY DATA TYPE STP6NB 80 STP6N B 80FP • . . . . V dss RDS on Id 800 V 800 V < 1 .9 Q. < 1 .9 Cl 5 .7 A 5 .7 A TYPICAL RDS(on) = 1 .6


    OCR Scan     		PDF STP6NB80 STP6NB80FP T0-220/T0-220FP STP6NB80/FP O-22QFP