CY62136CV30
Abstract: CY62136V
Text: 36CV30 ADVANCE INFORMATION CY62136CV30 MoBL 128K x 16 Static RAM Features power consumption by 80% when addresses are not toggling. The device can also be put into standby mode reducing power consumption by more than 99% when deselected CE HIGH . The input/output pins (I/O0 through I/O15) are placed in a
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36CV30
CY62136CV30
I/O15)
CY62136CV30:
CY62136V
CY62136V
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CY62137CV18
Abstract: 1105
Text: CY62137CV18 MoBL2 128K x 16 Static RAM Features reduces power consumption by 99% when addresses are not toggling. The device can also be put into standby mode when deselected CE HIGH or both BLE and BHE are HIGH . The input/output pins (I/O0 through I/O15) are placed in a
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CY62137CV18
I/O15)
CY62137BV18
1105
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CY62136CV
Abstract: CY62136CV30 CY62136CV33 CY62136V
Text: CY62136CV30/33 MoBL CY62136CV MoBL 2M 128K x 16 Static RAM Features This is ideal for providing More Battery Life (MoBL ) in portable applications such as cellular telephones. The device also has an automatic power-down feature that significantly
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CY62136CV30/33
CY62136CV
I/O15)
CY62136CV33
CY62136CV30
CY62136V
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cy7c68000
Abstract: CY7C68000-56PVC CY7C68000-56PVCT
Text: CY7C68000 CY7C68000 TX2 USB 2.0 UTMI Transceiver Cypress Semiconductor Corporation Document #: 38-08016 Rev. *C • 3901 North First Street • San Jose, CA 95134 • 408-943-2600 Revised February 20, 2003 CY7C68000 TABLE OF CONTENTS 1.0 EZ-USB TX2 FEATURES . 3
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CY7C68000
CY7C68000
CY7C68000-56PVC
CY7C68000-56PVCT
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CY7C68000
Abstract: CY7C68000-56PVC CY7C68000-56PVCT ba48
Text: CY7C68000 TX2 USB 2.0 UTMI Transceiver CY7C68000 TX2 USB 2.0 UTMI Transceiver Cypress Semiconductor Corporation Document #: 38-08016 Rev. *B • 3901 North First Street • San Jose, CA 95134 • 408-943-2600 Revised Novermber 15, 2002 CY7C68000 TABLE OF CONTENTS
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CY7C68000
CY7C68000
CY7C68000-56PVC
CY7C68000-56PVCT
ba48
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CY7C1021BV33
Abstract: CY7C1021CV33
Text: CY7C1021CV33 64K x 16 Static RAM Features • Pin- and function-compatible with CY7C1021BV33 • High speed — tAA = 8, 10, 12, and 15 ns • CMOS for optimum speed/power • Low active power — 360 mW max. • Data retention at 2.0V • Automatic power-down when deselected
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CY7C1021CV33
CY7C1021BV33
44-pin
400-mil
48-ball
CY7C1021CV33
CY7C1021BV33
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K6X0808C1D-BF55
Abstract: HY6264P AS6C1008-55SIN samsung p28 K6R4016V1D-UC10 as6c4008-55sin HYNIX IS61LV25616AL-10KLI GS71116AGP-10 uPD431000ACZ-70L
Text: cross_reference Density Organization Alliance Alliance Part Number Alliance Package Alliance Speed Samsung Samsung Part Number Cypress Cypress Part Number Cypress Package Cypress Package Code Cypress Speed IDT Part Number IDT Package IDT Package Code IDT Speed ISSI
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CY7C128A-15VC
CY7C128A-15SC
CY7C167A-15PC
CY7C168A-15PC
24PIN
20PIN
300MIL
K6X0808C1D-BF55
HY6264P
AS6C1008-55SIN
samsung p28
K6R4016V1D-UC10
as6c4008-55sin
HYNIX
IS61LV25616AL-10KLI
GS71116AGP-10
uPD431000ACZ-70L
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CY62127BV
Abstract: CY62127BVLL-55ZI
Text: CY62127BV MoBL 1M 64K x 16 Static RAM Features significantly reduces power consumption when addresses are not toggling, or when deselected (CE HIGH or both BLE and BHE are HIGH). The input/output pins (I/O0 through I/O15) are placed in a high-impedance state when: deselected (CE
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CY62127BV
I/O15)
CY62127BVLL-55ZI
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Untitled
Abstract: No abstract text available
Text: CY62137CV18 MoBL2 128K x 16 Static RAM Features deselected CE HIGH or when CE is LOW and both BLE and BHE are HIGH. The input/output pins (I/O0 through I/O15) are placed in a high-impedance state when: deselected (CE HIGH), outputs are disabled (OE HIGH), BHE and BLE are
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CY62137CV18
CY62137CV18:
CY62137V18/BV18
I/O15)
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Untitled
Abstract: No abstract text available
Text: CY7C1041CV33 Automotive 4-Mbit 256 K x 16 Static RAM 4-Mbit (256 K × 16) Static RAM Features Functional Description • Temperature ranges ❐ Automotive-A: –40 °C to 85 °C ❐ Automotive-E: –40 °C to 125 °C The CY7C1041CV33 Automotive is a high performance CMOS
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CY7C1041CV33
I/O15)
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Untitled
Abstract: No abstract text available
Text: CY62136CV18 MoBL2 128K x 16 Static RAM Features an automatic power-down feature that significantly reduces power consumption by 99% when addresses are not toggling. The device can also be put into standby mode when deselected CE HIGH . The input/output pins (I/O0 through I/O15) are
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CY62136CV18
I/O15)
CY62136CV18:
CY62136V18/BV18
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cy7c1041cv33-12zsxe
Abstract: No abstract text available
Text: CY7C1041CV33 Automotive 4-Mbit 256 K x 16 Static RAM 4-Mbit (256 K × 16) Static RAM Features Functional Description • Temperature ranges ❐ Automotive-A: –40 °C to 85 °C ❐ Automotive-E: –40 °C to 125 °C The CY7C1041CV33 Automotive is a high performance CMOS
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CY7C1041CV33
I/O15)
cy7c1041cv33-12zsxe
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CY7C1021CV33-10ZC
Abstract: No abstract text available
Text: CY7C1021CV33 64K x 16 Static RAM Features • Pin- and function-compatible with CY7C1021BV33 • High speed — tAA = 8, 10, 12, and 15 ns • CMOS for optimum speed/power • Low active power — 360 mW max. • Data retention at 2.0V • Automatic power-down when deselected
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CY7C1021CV33
CY7C1021BV33
44-pin
400-mil
48-ball
CY7C1021CV33
CY7C1021CV33-10ZC
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CY62126BV
Abstract: No abstract text available
Text: 26BV CY62126BV 64K x 16 Static RAM Features • 2.7V–3.6V operation • CMOS for optimum speed/power • Low active power 70 ns, LL version — 54 mW (max.) (15 mA) • Low standby power (70 ns, LL version) — 54 µW (max.) (15 µA) • Automatic power-down when deselected
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CY62126BV
44-pin
CY62126BV
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BA36B
Abstract: fBGA 80 package
Text: Package Diagrams Ball Grid Array Packages 36-Ball Thin BGA BA36A 51-85099-B 1 Package Diagrams 36-Ball 7.00 mm x 8.5 mm x 1.2 mm Thin BGA BA36B 51-85105-*C 2 Package Diagrams 42-Ball FBGA (7.0 x 5.0 x 1.2 mm) BA42 51-85139-*C 3 Package Diagrams 48-Ball (8.0 x 14.0 x 1.1 mm) Thin BGA BA47
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36-Ball
BA36A
51-85099-B
36-Ball
BA36B
42-Ball
48-Ball
BA48A
51-85096-D
BA36B
fBGA 80 package
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CY7C1021CV33-10ZC
Abstract: CY7C1021BV33 CY7C1021CV33 TSOP 48 thermal resistance TSOP 48 thermal resistance junction to case CY7C1021CV33-10VXI FBGA PACKAGE thermal resistance
Text: CY7C1021CV33 1-Mbit 64K x 16 Static RAM Functional Description[1] Features • Temperature Ranges The CY7C1021CV33 is a high-performance CMOS static RAM organized as 65,536 words by 16 bits. This device has an automatic power-down feature that significantly reduces
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CY7C1021CV33
CY7C1021CV33
CY7C1021BV33
44-pin
400-mil
48-ball
CY7C1021CV33-10ZC
CY7C1021BV33
TSOP 48 thermal resistance
TSOP 48 thermal resistance junction to case
CY7C1021CV33-10VXI
FBGA PACKAGE thermal resistance
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Untitled
Abstract: No abstract text available
Text: CY7C1021CV33 64K x 16 Static RAM Features • Pin- and function-compatible with CY7C1021BV33 • High speed — tAA = 8, 10, 12, and 15 ns • CMOS for optimum speed/power • Low active power — 360 mW max. • Data retention at 2.0V • Automatic power-down when deselected
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CY7C1021CV33
CY7C1021BV33
44-pin
400-mil
48-ball
CY7C1021CV33
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Untitled
Abstract: No abstract text available
Text: CY7C67200 PRELIMINARY EZ-OTG Programmable USB On-The-Go Host/Peripheral Controller Cypress Semiconductor Corporation Document #: 38-08014 Rev. *D • 3901 North First Street • San Jose, CA 95134 • 408-943-2600 Revised May 28, 2003 PRELIMINARY CY7C67200
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CY7C67200
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CY62136CV18
Abstract: No abstract text available
Text: CY62136CV18 MoBL2 128K x 16 Static RAM Features an automatic power-down feature that significantly reduces power consumption by 99% when addresses are not toggling. The device can also be put into standby mode when deselected CE HIGH . The input/output pins (I/O0 through I/O15) are
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CY62136CV18
I/O15)
CY62136BV18
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CY62137CV25
Abstract: CY62137CV30 CY62137CV33 CY62137V
Text: 47V CY62137CV25/30/33 MoBL 2M 128K x 16 Static RAM Features also has an automatic power-down feature that significantly reduces power consumption by 80% when addresses are not toggling. The device can also be put into standby mode reducing power consumption by more than 99% when deselected
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CY62137CV25/30/33
I/O15)
CY62137CV25:
CY62137CV30:
CY62137CV33:
CY62137CV25/30/33
CY62137CV25
CY62137CV30
CY62137CV33
CY62137V
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CY7C1021BV33
Abstract: No abstract text available
Text: 021BV33 CY7C1021BV33 64K x 16 Static RAM Writing to the device is accomplished by taking Chip Enable CE and Write Enable (WE) inputs LOW. If Byte Low Enable (BLE) is LOW, then data from I/O pins (I/O1 through I/O8), is written into the location specified on the address pins (A0
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021BV33
CY7C1021BV33
I/O16)
CY7C1021BV33
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bv48a
Abstract: CY62137CV CY62137CV25 CY62137CV30 CY62137CV33 CY62137V
Text: 137CV25/3 CY62137CV25/30/33 MoBL CY62137CV MoBL® 2M 128K x 16 Static RAM Features Life (MoBL®) in portable applications such as cellular telephones. The devices also has an automatic power-down feature that significantly reduces power consumption by 80%
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137CV25/3
CY62137CV25/30/33
CY62137CV
I/O15)
bv48a
CY62137CV25
CY62137CV30
CY62137CV33
CY62137V
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CY62137CV25
Abstract: CY62137CV30 CY62137CV33 CY62137V
Text: 47V CY62137CV25/30/33 ADVANCE INFORMATION MoBL 128K x 16 Static RAM Features cantly reduces power consumption by 80% when addresses are not toggling. The device can also be put into standby mode reducing power consumption by more than 99% when deselected CE HIGH or both BLE and BHE are HIGH . The input/output pins (I/O0 through I/O15) are placed in a high-impedance state when: deselected (CE HIGH), outputs are
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CY62137CV25/30/33
I/O15)
CY62137CV25:
CY62137CV30:
CY62137CV33:
CY6213s
CY62137CV25/30/33
CY62137CV25
CY62137CV30
CY62137CV33
CY62137V
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CY7C68000
Abstract: CY7C68000-48 CY7C68000-56
Text: 68000 ADVANCE INFORMATION CY7C68000 CY7C68000 TX2 High-Speed USB Transceiver Cypress Semiconductor Corporation Document #: 38-08016 Rev. * • 3901 North First Street • San Jose • CA 95134 • 408-943-2600 Revised February 12, 2002 ADVANCE INFORMATION
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CY7C68000
CY7C68000
CY7C68000-48
CY7C68000-56
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