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    BA8E Search Results

    BA8E Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    UPD78F0114M1GB(A)-8ES Renesas Electronics Corporation Compact, Low-power 8-bit Microcontrollers for General Purpose Applications (Non Promotion), LQFP, / Visit Renesas Electronics Corporation
    UPD78F0138M6GB(A)-8EU Renesas Electronics Corporation Compact, Low-power 8-bit Microcontrollers for General Purpose Applications (Non Promotion), LQFP, / Visit Renesas Electronics Corporation
    UPD78F0114M6GB(A)-8ES Renesas Electronics Corporation Compact, Low-power 8-bit Microcontrollers for General Purpose Applications (Non Promotion), LQFP, / Visit Renesas Electronics Corporation
    UPD78F0138M2GB(A)-8EU Renesas Electronics Corporation Compact, Low-power 8-bit Microcontrollers for General Purpose Applications (Non Promotion), LQFP, / Visit Renesas Electronics Corporation
    UPD78F9852GB(A)-8ES-A Renesas Electronics Corporation 8-bit Microcontrollers (Non Promotion) Visit Renesas Electronics Corporation
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    BA8E Price and Stock

    Micron Technology Inc MT25TL512BBA8ESF-0AAT

    IC FLASH 512MBIT SPI 16SOP2
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey MT25TL512BBA8ESF-0AAT Tube 4,281 1
    • 1 $8.21
    • 10 $7.288
    • 100 $6.475
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    Avnet Asia MT25TL512BBA8ESF-0AAT 12 Weeks 1,000
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    • 1000 $6.81579
    • 10000 $6.39506
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    Micron Technology Inc MT25QU256ABA8E55-0SIT-TR

    IC FLASH 256MBIT SPI 23XFWLBGA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey MT25QU256ABA8E55-0SIT-TR Digi-Reel 4,005 1
    • 1 $4.69
    • 10 $4.162
    • 100 $3.6952
    • 1000 $3.27878
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    MT25QU256ABA8E55-0SIT-TR Cut Tape 4,005 1
    • 1 $4.69
    • 10 $4.162
    • 100 $3.6952
    • 1000 $3.27878
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    Micron Technology Inc MT25QL256ABA8ESF-0SIT-TR

    IC FLASH 256MBIT SPI 133MHZ 16SO
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    DigiKey MT25QL256ABA8ESF-0SIT-TR Reel 4,000 1,000
    • 1 -
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    • 1000 $3.58106
    • 10000 $3.45391
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    Micron Technology Inc MT25QL256ABA8E12-0AAT

    IC FLASH 256MBIT SPI 24TPBGA
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    DigiKey MT25QL256ABA8E12-0AAT Bulk 2,443 1
    • 1 $6.46
    • 10 $5.729
    • 100 $5.0839
    • 1000 $4.6756
    • 10000 $4.48272
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    Mouser Electronics MT25QL256ABA8E12-0AAT 8,446
    • 1 $6.46
    • 10 $5.73
    • 100 $5.09
    • 1000 $4.68
    • 10000 $4.48
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    Newark MT25QL256ABA8E12-0AAT Bulk 401 1
    • 1 $5.12
    • 10 $4.73
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    Bristol Electronics MT25QL256ABA8E12-0AAT 4,247
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    Avnet Asia MT25QL256ABA8E12-0AAT 12 Weeks 2,500
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    New Advantage Corporation MT25QL256ABA8E12-0AAT 187 1
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    Win Source Electronics MT25QL256ABA8E12-0AAT 1,136
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    • 10 $6.0624
    • 100 $4.0416
    • 1000 $4.0416
    • 10000 $4.0416
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    Micron Technology Inc MT25QU128ABA8E12-0AAT-TR

    IC FLASH 128MBIT SPI 24TPBGA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey MT25QU128ABA8E12-0AAT-TR Digi-Reel 1,453 1
    • 1 $4.44
    • 10 $3.947
    • 100 $3.5043
    • 1000 $3.10946
    • 10000 $3.10946
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    MT25QU128ABA8E12-0AAT-TR Cut Tape 1,453 1
    • 1 $4.44
    • 10 $3.947
    • 100 $3.5043
    • 1000 $3.10946
    • 10000 $3.10946
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    BA8E Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BA-8E6UW Bright LED LED LIGHT BAR & BAR GRAPH ARRAY Original PDF
    BA-8E6UW Bright LED 10.0 x 20.16mm LIGHT BAR Original PDF
    BA-8E6UW YellowStone LED LIGHT BAR & BAR GRAPH ARRAYS Original PDF
    BA-8E7UW-D American Bright Optoelectronics LED Light Bar & Bar Graph Array Original PDF
    BA-8E7UW-D YellowStone Hi-eff red/orange , anode/cathode, LED light bar Original PDF
    BA-8E9UW American Bright Optoelectronics LED Light Bar & Bar Graph Array Original PDF
    BA-8E9UW YellowStone Hi-eff red/orange , anode/cathode, LED light bar Original PDF

    BA8E Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    DSP62

    Abstract: AD14 BA-3H12UW
    Text: LED Light Bar & Bar Graph Arrays Part No. Digit Size 15.0*15.0mm Light Bar Cylindrical 8.50 Light Bar 33.0*22.0mm Light Bar Triangular Light Bar Common Anode Common Cathode Peak Wave Length λ p nm GaAsP/Red 655 40 160 40 200 3.4 4.0 BA-8H7UW-2 GaP/ Bright Red


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    DSP-62 AD-13 AD-14 AD-15 AD-16 2x10UW AD-17 BA-16x11UW AD-18 3x12UW DSP62 AD14 BA-3H12UW PDF

    Untitled

    Abstract: No abstract text available
    Text: LED LIGHT BAR & BAR GRAPH ARRAYS Part No. Digit Size Common Anode Common Cathode Absolute Maximum Ratings Chip Electro-optical Data At 10mA Drawing Peak Vf (v) Iv. Typ. 'O No. Wave Pd If Ifp Per. Seg. Length (nm) (mw) (mA) (mA) Typ. Max. (mcd) P(nm) Material/Emitted


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    BA-10H1UD BA-10G1UD 10Bar BA-10Y1UD BA-10E1UD BA-10S1UD BA-3E12UW BA-3S12UW BA-3D12UW AD-07 PDF

    Untitled

    Abstract: No abstract text available
    Text: FE00 0002* 0!+,)&/!2)2.% %&0'0=40>0C7FAA0+,?> 9?0774209?0":94?:=492 #0&,470":@9?4920%:B0=0'@;740>  )&' 800000009000000B 09E1A00A 1A 000A4260 B0000000030000003 G00)94A0=>,7009;@? G00'3:=?04=.@4?0%=:?0.?4:90B4?30@?:0&0.:A0=D


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    800000009000000B 1A00A 000A4260 B0000000030000003 D4920* 90BCA AC789 D7E45324 50000000F000001 640006CA006 PDF

    Untitled

    Abstract: No abstract text available
    Text: BRIGHT LED ELECTRONICS CORP. SINCE 1981 BA-8E9UW Package Dimensions : Features : 1. Emitting area : 31.0x20.0 mm . 2. Low power requirement. 3. Excellent characters appearance. 4. Solid state reliability. 5. Categorized for luminous intensity. Description :


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    PDF

    DSP62

    Abstract: No abstract text available
    Text: LED Light Bar & Bar Graph Arrays Part No. Digit Size 15.0*15.0mm Light Bar Cylindrical 8.50 Light Bar 33.0*22.0mm Light Bar Triangular Light Bar Common Anode Common Cathode Peak Wave Length λ p nm GaAsP/Red 655 40 160 40 200 3.4 4.0 BA-8H7UW-2 GaP/ Bright Red


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    DSP-62 AD-13 AD-14 AD-15 AD-16 2x10UW AD-17 BA-16x11UW AD-18 3x12UW DSP62 PDF

    d718d

    Abstract: No abstract text available
    Text: 123452667898ABCD8EF6B7 86DEA 123314567891A758BCD814E1F3D167D1F1C5A36 896616 BC !"F#$662%51&'6%F76 AA6!"F688987 123456 5 *23+*52) FF1 9 1 6 1 9633 1 4B 1 A5D7B3 1 8DD35AD 1 45678 1 5 1 3D 1 E5B 1 C5753 1 1


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    123452667898ABCD8EF6 123314567891A758BCD814E1F3 167D1 17D36E15B B7D91 91A599 D71F3 F1A75 B33E15AD 67D16 d718d PDF

    2SD1417

    Abstract: No abstract text available
    Text: SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON POWER 2SD1417 INDUSTRIAL APPLICATIONS Unit in mm HIGH POWER SWITCHING APPLICATIONS. HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS. FEATURES: . High DC Current Gain: h F E = 2 0 0 0 (Min.)(at V c e = 3V, Ic=3A) . Low Saturation Voltage: V q e (sat)=1-5V(Max.) (at Ic=3A)


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    2SB1022. 2SD1417 a76-ai5 2-10L1A 2SD1417 PDF

    Untitled

    Abstract: No abstract text available
    Text: D I S P L A Y LED LIGHT BARS & BAR GRAPH ARRAYS Chip P a rt No. E m itte d Digit Size Common Common Anode Cathode Color Electro-optical A b s o lu te M a x im u m R atings D ata A t 10mA Drawing Peak Wave Iv T yp. Vf(V) Pd Peak No. L ength A A P e r Seg.


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    PDF

    BU407

    Abstract: BU406 1462, TRANSISTOR
    Text: ÆàMOS PEC NPN POWER TRANSISTOR These devices are high voltage,high speed transistors for hor­ izontal deflection output stages of TV's and CTV"s circuits. NPN BU406 BU407 FEATURES: * Collector-Emitter Sustaining Voltage VCEV = 330 V Min. - BU407 = 400 V (M in.)-BU406


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    BU407 BU406 BU406 BU407 BU406- BU407- 150oC 1462, TRANSISTOR PDF

    TP30C

    Abstract: A 652 tip30c TIP29 TIP29A TIP29B TIP29C TIP30 TIP30A TIP30B
    Text: ÆÂMOS PEC COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORS NPN TIP29 TIP29A TIP29B TÍP29C . designed for use in genera! purpose power amplifier and switching applications. FEATURES: * Coilector-Emitter Sustaining Voltage V~,v._r 40V Min - TIP29.TIP30


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    TIP29 TIP30 TIP29A TIP30A TIP29B TIP30B -TiP29C TIP30C TP30C A 652 tip30c TIP29C TIP30 PDF

    KSP06

    Abstract: KSP05
    Text: KSP05/06 NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR • Collector-Emltter Voltage: VCEo = KSP05: 60V KSP06: 80V • Collector DlMlpatlon: Pc max =625mW TO -92 ABSOLUTE MAXIMUM RATINGS (T, =25#C) Characteristic Symbol C o lle cto r B ase Voltage


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    KSP05/06 KSP05: KSP06: 625mW KSP05 KSP06 KSP06 KSP05 PDF

    TTK SG 2368

    Abstract: BV EI 303 3628 7 segment LD 1106 BS LM 6863 D I8253 yx 8018 0308 082c ez 422 BV EI 304 3083 0429 01 2701 00 RELE 12,8 mhz e 4895 lf
    Text: AP-55A APPLICATION NOTE i n t e i A u g u s t 1979 S.A. Distributor E l e c t r o n ic \ \ B u il d in g E l e m e n t s p t y l t d PURVEYORS OF a l l ELECTRONIC COMWNENTS Tel eph on e 7 8 - 9 2 2 1 / 6 P O B o x 4 6 0 9 , Pretoria T e l e x 3 01 8 1 S A


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    AP-55A PR00UCT. MCS-48 /TP-11/1179/5K TTK SG 2368 BV EI 303 3628 7 segment LD 1106 BS LM 6863 D I8253 yx 8018 0308 082c ez 422 BV EI 304 3083 0429 01 2701 00 RELE 12,8 mhz e 4895 lf PDF

    Untitled

    Abstract: No abstract text available
    Text: KSC1393 NPN EPITAXIAL SILICON TRANSISTOR TV VHF TUNER RF AMPLIFIER FORWARD AGC TO-92 • High Current Gain Bandwidth Product fr=700MHz (Typ) • Low Noise Figure NF=3.0dB (Max) at f*200MHz • Low Reverse Transfer Capacitance C RE=0.5pF (Max) ABSOLUTE MAXIMUM RATINGS (TA-25t:)


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    KSC1393 700MHz 200MHz PDF

    Untitled

    Abstract: No abstract text available
    Text: KSC1674 NPN EPITAXIAL SILICON TRANSISTOR TV PIF AMPLIFIER, FM TUNER RF AMPLIFIER, MIXER, OSCILLATOR TO-92 • High Current-Gain Bandwidth Product fT>600MHz Typ • High Power Gain Gpe=22dB at f= 100MHz ABSOLUTE MAXIMUM RATINGS (TA-2 5 t:) C haracteristic


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    KSC1674 600MHz 100MHz 100MHz PDF

    MG75H2YL1A

    Abstract: A 222G
    Text: GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE MG75H2YL1A HIGH POWER SWITCHING APPLICATIONS. Unit in mm MOTOR CONTROL APPLICATIONS. FEATURES : . The Collector is Isolated from Case. . 2 Power Transistors and 2 Free Wheeling Diodes are Built-in to 1 Package. . High DC Current Gain: hpg=80 Min. (Iç=75A)


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    MG75H2YL1A 00A/ns MG75H2YL1A A 222G PDF

    Untitled

    Abstract: No abstract text available
    Text: INTERNATIONAL RECTIFIER IO R 73 D | MflSSMSa □0071ÖM i f T'-¿>/' 2'3 Data Sheet No. PD-2.134 In t e r n a t i o n a l , r e c t i f i e r R23D & R23DR SERIES 600 - 400 VOLTS RANGE 350 AMP AVG STUD MOUNTED DIFFUSED JUNCTION RECTIFIER DIODES VOLTAGE RATINGS


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    R23DR D0-205AB R23DGR4A. 4fl55452 00071flfl PDF

    Untitled

    Abstract: No abstract text available
    Text: KSC1815 NPN EPITAXIAL SILICO N TRANSISTO R AUDIO FREQUENCY AMPLIFIER HIGH FREQUENCY OSC • Complement to KSC1815 • Collector-Base Voltage Vcbo=-50V ABSOLUTE MAXIMUM RATINGS Characteristic Ta=25°C Symbol Rating Unit VCBO 60 50 5 150 50 400 125 -55-150


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    KSC1815 PDF

    Untitled

    Abstract: No abstract text available
    Text: KST3906 PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C Ch a ra cteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Storage Temperature


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    KST3906 OT-23 PDF

    H11A520-H11A550

    Abstract: H11A51 H11A5100 H11A520 H11A550 HUA550
    Text: S OL I D STATE D1 DE I 3 Ö7 SDÖ1 0 0 1 ^ 4 7 Optoelectronic Specifications - T - m - s z Photon Coupled Isolator H11A520-H11A550 -H11A5100 Ga As Infrared Emitting Diode & NPN Silicon Photo-Transistor T h e G E Solid State H 11A520, H11A550 and H I 1A5100 consist o f a


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    3fl75Dfll H11A520-H11A550 -H11A5100 H11A520, H11A550 H11A5100 referencefileE51868 H11A520-H11A550-H11A5100 H11A51 H11A520 HUA550 PDF

    KSA545

    Abstract: KSC853 LTAGE WALTA
    Text: SAMSUNG SEMI C O NDU CT OR INC KSC853 11E | V lfcq ita O O Ob S S ? 3 | 'T - - 1 - f t NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY AMPLIFIER • Complement to KSA545 • High Collector-Bas* Voltage Vcso =70V • Collector Dissipation Pc =400mW ABSOLUTE MAXIMUM RATINGS Ta=25°C


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    7U414E KSC853 KSA545 400mW KSA545 LTAGE WALTA PDF

    BU406

    Abstract: BU407 HI SPEED, HI CURRENT, TO-220, TRANSISTOR
    Text: ÆàMOS PEC NPN POWER TRANSISTOR These devices are high voltage,high speed transistors for hor­ izontal deflection output stages of TV's and CTV"s circuits. NPN BU406 BU407 FEATURES: * Collector-Emitter Sustaining Voltage VCEV = 330 V Min. - BU407 = 400 V (M in.)-BU406


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    BU407 -BU406 BU406 BU407 150oC HI SPEED, HI CURRENT, TO-220, TRANSISTOR PDF

    ica 700 Y

    Abstract: transistor 16299
    Text: TOSHIBA -CDISCRETE/OPTOÏ 9097250 TOSHIBA TO SH IBA TD DISCRETE/OPTO 1)1 ^ 0^7550 OOlbETt 3 DT-3 3 - 3 5 90D 16296 SEMICONDUCTOR TOSHIBA GTR MODULE TECHNICAL DATA MG400H1F L 1 SILICON NPN TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS.


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    MG400H1F ica 700 Y transistor 16299 PDF

    MG75H6EL1

    Abstract: No abstract text available
    Text: MG75H6EL1 GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. . The Collector is Isolated from Case. . 6 Darlington Transistors are Built-in to 1 Package. . With Built-in Free Wheeling Diode. . High DC Current Gain


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    MG75H6EL1 MG75H6EL1 PDF

    Untitled

    Abstract: No abstract text available
    Text: INTERNATIONAL RECTIFIER lOR j| 4055455 □□0720cï E | in t e r n a t io n a l, r e c t if i e r _ T — c/— 7^3 DataSheetNo.PD-2.139 R30D & R30DR S E R IE S 600 - 400 VOLTS R A N G E 485 A M P AVG S T U D M O U N T E D D IF F U SE D JU N C T IO N R E C T IF IE R D IO D E S


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    0720c R30DR 600Vi R30DR6A. PDF