AN025 Push-Pull High IP2 Amplifiers
Abstract: ECB-100331 NGA-486 sga-6289 C 32725 ETC1-1-13 AN025 wide bandwidth D 811-25
Text: DESIGN APPLICATION NOTE - AN025 Push-Pull High IP2 Amplifiers Abstract: With the abundance of data and voice traffic being transmitted across standard cable and wireless pathways and the ever increasing linearity requirements of CATV amplifiers, there is a great need for amplification that optimizes gain,
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AN025
NGA-486
SGA-6289,
V/150mA,
SGA-6289
V/160mA,
AN025 Push-Pull High IP2 Amplifiers
ECB-100331
C 32725
ETC1-1-13
AN025
wide bandwidth
D 811-25
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TRANSISTOR Z4
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon Push-Pull RF Power Transistor MRF392 Designed primarily for wideband large–signal output and driver amplifier stages in the 30 to 500 MHz frequency range. • Specified 28 Volt, 400 MHz Characteristics —
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MRF392
MRF392
TRANSISTOR Z4
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7472B
Abstract: RF push pull power amplifier 1008AF-901XKLC TC1-33-75G2 avx 603 TAT7472B LQH31HNR50K 001 soic TAT7472 ESD 2255
Text: 75 Ohm RF Amplifier 50-1000 MHz TAT 7472B Advanced Product Information Overview The TAT7472B is a general purpose push pull CATV 75 Ohm RF Amplifier designed for use up to 1000 MHz. It is fabricated using Triquint’s GaAs pHEMT technology to optimize performance and cost. This high
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7472B
TAT7472B
R90728
7472B
RF push pull power amplifier
1008AF-901XKLC
TC1-33-75G2
avx 603
LQH31HNR50K
001 soic
TAT7472
ESD 2255
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RF push pull power amplifier
Abstract: 7466 class A push pull power amplifier class B push pull power amplifier balun ntsc MABA-007681-CT2010 R81017 186MA 04025A151JAT2A balun push pull
Text: 75 Ohm RF Amplifier 50-1300 MHz TAT7466 Advanced Product Information Overview The TAT7466 is a 75 Ohm RF Amplifier designed for use up to 1300 MHz. The TAT7466 contains two separate amplifiers for push pull applications. It is fabricated using 6-inch GaAs pHEMT technology to
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TAT7466
TAT7466
195mA
195mA,
R81017
RF push pull power amplifier
7466
class A push pull power amplifier
class B push pull power amplifier
balun ntsc
MABA-007681-CT2010
R81017
186MA
04025A151JAT2A
balun push pull
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93F2975
Abstract: MRF9120S MRF9120
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance of these
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MRF9120
MRF9120S
93F2975
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93F2975
Abstract: 865 marking amplifier MRF9120LR3
Text: Freescale Semiconductor Technical Data Rev. 8, 12/2004 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF9120R3 MRF9120LR3 Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance of these
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MRF9120R3
MRF9120LR3
93F2975
865 marking amplifier
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MRF9120
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance of these
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MRF9120
MRF9120S
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Untitled
Abstract: No abstract text available
Text: Preliminary CGA-3318 Product Description Sirenza Microdevice’s CGA-3318 is a high performance Silicon Germanium HBT MMIC Amplifier. Designed with SiGe process technology for excellent linearity at an exceptional price. A Darlington configuration is utilized for broadband performance.
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CGA-3318
CGA-3318
CGA3318
EDS-101993
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transistor z5
Abstract: erie redcap IC 2025 NPN TRANSISTOR Z4 RF push pull power amplifier TRANSISTOR Z4 MRF392 redcap 7w120 transistor D 716
Text: Order this document by MRF392/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon Push-Pull RF Power Transistor MRF392 Designed primarily for wideband large–signal output and driver amplifier stages in the 30 to 500 MHz frequency range. • Specified 28 Volt, 400 MHz Characteristics —
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MRF392/D
MRF392
MRF392
i1-44-844-8298
transistor z5
erie redcap
IC 2025
NPN TRANSISTOR Z4
RF push pull power amplifier
TRANSISTOR Z4
redcap
7w120
transistor D 716
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Macom marking code
Abstract: marking code macom
Text: Preliminary CGA-6618 Product Description Dual CATV 1 MHz to 1000 MHz High Linearity GaAs HBT Amplifier Sirenza Microdevice’s CGA-6618 is a high performance GaAs HBT MMIC Amplifier. Designed with the InGaP process technology for excellent reliability. A Darlington configuration
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CGA-6618
CGA--6618
CGA-6618
CGA6618
EDS-101994
Macom marking code
marking code macom
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marking code sirenza
Abstract: MARKING CODE CGA
Text: Preliminary CGA-3318 Product Description Sirenza Microdevices CGA-3318 is a high performance Silicon Germanium HBT MMIC Amplifier. Designed with SiGe process technology for excellent linearity at an exceptional price. A Darlington configuration is utilized for broadband performance.
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CGA-3318
CGA-3318
CGA3318
EDS-101993
marking code sirenza
MARKING CODE CGA
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thermistor r5t
Abstract: chip resistor 1206 c19a S1239 MOTOROLA P C3B Kemet bc17a GX-0300-55 R7B Connector RO3010
Text: MOTOROLA MRF373 MRF373S The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs 60 W, 470 – 860 MHz, 28 V LATERAL N–CHANNEL BROADBAND RF POWER MOSFETS Designed for broadband commercial and industrial applications at frequencies from 470 – 860 MHz. The high gain and broadband performance of this
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MRF373S
MRF373
31JUL04
31JAN05
thermistor r5t
chip resistor 1206
c19a
S1239
MOTOROLA P
C3B Kemet
bc17a
GX-0300-55
R7B Connector
RO3010
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marking code sirenza
Abstract: macom marking
Text: Preliminary CGA-6618 Product Description Dual CATV 1 MHz to 1000 MHz High Linearity GaAs HBT Amplifier Sirenza Microdevice’s CGA-6618 is a high performance GaAs HBT MMIC Amplifier. Designed with the InGaP process technology for excellent reliability. A Darlington configuration
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CGA-6618
CGA--6618
CGA-6618
CGA6618
EDS-101994
marking code sirenza
macom marking
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SOIC-08
Abstract: macom marking ETC1-1-13 CGA6618 CGA-6618 CGA-6618Z macom rf amp ESOP-8 ESOP-8 Land pattern marking code macom
Text: CGA-6618 Product Description CGA-6618Z Sirenza Microdevice’s CGA-6618 is a high performance GaAs HBT MMIC Amplifier. Designed with the InGaP process technology for excellent reliability. A Darlington configuration is utilized for broadband performance. The heterojunction increases
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CGA-6618
CGA-6618Z
CGA-6618
CGA6618
EDS-101994
SOIC-08
macom marking
ETC1-1-13
CGA6618
CGA-6618Z
macom rf amp
ESOP-8
ESOP-8 Land pattern
marking code macom
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MRF392/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon Push-Pull RF Power Transistor MRF392 Designed primarily for wideband large–signal output and driver amplifier stages in the 30 to 500 MHz frequency range. • Specified 28 Volt, 400 MHz Characteristics —
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MRF392/D
MRF392
MRF392/D*
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Z1 Transistor
Abstract: MRF392
Text: MOTOROLA Order this document by MRF392/D SEMICONDUCTOR TECHNICAL DATA NPN Silicon Push-Pull RF Power Transistor MRF392 Designed primarily for wideband large–signal output and driver amplifier stages in the 30 to 500 MHz frequency range. • Specified 28 Volt, 400 MHz Characteristics —
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MRF392/D
MRF392
MRF392/D*
Z1 Transistor
MRF392
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rf push pull mosfet power amplifier
Abstract: class A push pull power amplifier marking us capacitor pf l1 MARKING WB1 MRF9120 MRF9120LR3 marking WB3 C2622
Text: Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFET MRF9120LR3 LIFETIME BUY Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance of
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MRF9120LR3
MRF9120
rf push pull mosfet power amplifier
class A push pull power amplifier
marking us capacitor pf l1
MARKING WB1
MRF9120
MRF9120LR3
marking WB3
C2622
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Untitled
Abstract: No abstract text available
Text: CGA-6618Z CGA-6618Z Dual CATV 5MHz to 1000MHz High Linearity GaAs HBT Amplifier DUAL CATV 5MHz to 1000MHz HIGH LINEARITY GaAs HBT AMPLIFIER Package: ESOP-8 Product Description Features RFMD’s CGA-6681Z is a high performance GaAs HBT MMIC amplifier. Designed
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CGA-6618Z
1000MHz
1000MHz
CGA-6681Z
DS120502
CGA6618ZSB
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MRF392
Abstract: TRANSISTOR Z4 3142 equivalent J044 Z1 Transistor 6 pin transistor Z6 Z6 82 mini cap 744A-01 LX125
Text: MOTOROLA Order this document by MRF392/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon Push-Pull RF Power Transistor MRF392 Designed primarily for wideband large–signal output and driver amplifier stages in the 30 to 500 MHz frequency range. • Specified 28 Volt, 400 MHz Characteristics —
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MRF392/D
MRF392
MRF392/D*
MRF392
TRANSISTOR Z4
3142 equivalent
J044
Z1 Transistor 6 pin
transistor Z6
Z6 82
mini cap
744A-01
LX125
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motorola L6
Abstract: linear amplifier 470-860 TPV7025
Text: MOTOROLA Order this document by TPV7025/D SEMICONDUCTOR TECHNICAL DATA The RF Line UHF Linear Power Transistor TPV7025 . . . designed for output stages in Band IV & V TV transmitter amplifiers. Internal matching of both input and output along with use of a push–pull package
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TPV7025/D
TPV7025
TPV7025/D*
motorola L6
linear amplifier 470-860
TPV7025
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rf push pull mosfet power amplifier
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MRF9120 Rev. 9, 3/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFET MRF9120LR3 Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance of
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MRF9120
MRF9120LR3
MRF9120
rf push pull mosfet power amplifier
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rf push pull mosfet power amplifier
Abstract: MRF9120 MRF9120LR3 marking WB4
Text: Freescale Semiconductor Technical Data Document Number: MRF9120 Rev. 10, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFET MRF9120LR3 Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance of
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MRF9120
MRF9120LR3
rf push pull mosfet power amplifier
MRF9120
MRF9120LR3
marking WB4
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MRF9120/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor MRF9120R3 N - Channel Enhancement - Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance of this
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MRF9120/D
MRF9120R3
MRF9120/D
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CGA-6618Z
Abstract: CGA6618 CGA-6618 CGA6618ZSB CGA6618ZSQ ETC1-1-13
Text: CGA-6618Z CGA-6618Z Dual CATV 1MHz to 1000MHz High Linearity GaAs HBT Amplifier DUAL CATV 1MHz to 1000MHz HIGH LINEARITY GaAs HBT AMPLIFIER Package: ESOP-8 Product Description Features RFMD’s CGA-6681Z is a high performance GaAs HBT MMIC Amplifier. Designed
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CGA-6618Z
1000MHz
1000MHz
CGA-6681Z
Technolo-9421
CGA6618ZSB
CGA-6618Z
CGA6618
CGA-6618
CGA6618ZSB
CGA6618ZSQ
ETC1-1-13
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