2SC4367
Abstract: DSA003637
Text: 2SC4367 Silicon NPN Epitaxial ADE-208-1105 Z 1st. Edition Mar. 2001 Application High Frequency amplifier Outline TO-92MOD 1. Emitter 2. Collector 3. Base 3 2 1 2SC4367 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage
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2SC4367
ADE-208-1105
O-92MOD
2SC4367
DSA003637
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QCA200BA60
Abstract: No abstract text available
Text: TRANSISTOR MODULE（Hi-β） QCA200BA60 UL;E76102 （M） 15 C1 25.0 3-M6 L=10max AMP110 t=0.5 E1 B1 Unit：A （Tj＝25℃ unless otherwise specified） Item VCBO Collector-Base Voltage VCEX Collector-Emitter Voltage VEBO Emitter-Base Voltage −IC E1 B1
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QCA200BA60
E76102
AMP110
10max
VCEX600V
hFE750
50msec50sec
sec50msec
QCA200BA60
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2sc4367
Abstract: 2SC4367TZ-E PRSS0003DC-A
Text: 2SC4367 Silicon NPN Epitaxial REJ03G0724-0200 Previous ADE-208-1105 Rev.2.00 Aug.10.2005 Application High Frequency amplifier Outline RENESAS Package code: PRSS0003DC-A (Package name: TO-92 Mod) 1. Emitter 2. Collector 3. Base 3 2 1 Absolute Maximum Ratings
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2SC4367
REJ03G0724-0200
ADE-208-1105)
PRSS0003DC-A
2sc4367
2SC4367TZ-E
PRSS0003DC-A
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700-TFL-9001
Abstract: No abstract text available
Text: REVISIONS REV DESCRIPTION DATE APPROVED ECS INC. INTERNATIONAL ECS P/N: 700-TFL-9001 1105 S. Ridgeview Olathe, KS 66062 913 782-7787 SIGNATURES DRN BL CHK DK APP BS DATE 1/11/2011 1/11/2011 1/11/2011 TITLE HC-49U/US Base Insulator SIZE A Dimensions in mm
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700-TFL-9001
HC-49U/US
700-TFL-9001
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IEC 60061-1
Abstract: 60061-1 7004-94-x wedge lamp t1 60061.1 wedge lamp 1105l prisma
Text: PRODUCT DATA SHEET Type Incandescent Size T5 T-1½ Rating 6V 1W Description T5 Wedge base lamp Part No. 1105LF LCL 9.0 ± 2.0 Exhaust tip to clear in 3.05 dia. hole (1.5) Retention Groove (0.7) 5.5 Max. 14.5 Max 3.1 Max. 1.65 Min. 3.0 Min ø 5.0 Max 2.5 ~ 3.5
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1105LF
7004-94-x.
IEC 60061-1
60061-1
7004-94-x
wedge lamp t1
60061.1
wedge lamp
1105l
prisma
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706-TFL-UM1
Abstract: No abstract text available
Text: REVISIONS REV DESCRIPTION DATE APPROVED ECS P/N: 706-TFL-UM1 ECS INC. INTERNATIONAL 1105 S. Ridgeview Olathe, KS 66062 913 782-7787 SIGNATURES DRN BL CHK RC APP DK DATE 7/13/2011 7/13/2011 7/13/2011 TITLE UM-1 Base Insulator SIZE A Dimensions in mm DWG NO.706-TFL-UM1
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706-TFL-UM1
706-TFL-UM1
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HC-46X Base Insulator
Abstract: HC-46X 700-TFL-46
Text: REVISIONS REV DESCRIPTION DATE APPROVED ECS INC. INTERNATIONAL ECS P/N: 700-TFL-46 1105 S. Ridgeview Olathe, KS 66062 913 782-7787 SIGNATURES DRN BL CHK DK APP BS DATE 9/20/2011 9/20/2011 9/20/2011 TITLE HC-46X Base Insulator SIZE A Dimensions in mm DWG NO.700-TFL-46
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700-TFL-46
HC-46X
HC-46X Base Insulator
700-TFL-46
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IR-Diode
Abstract: TCDT1101G TCDT1102G IEC60065 TCDT1100 TCDT1100G TCDT1101 TCDT1102 VDE0884 E7622
Text: VISHAY TCDT1100/ TCDT1100G Vishay Semiconductors Optocoupler, Phototransistor Output Features • • • • Isolation Test Voltage 3750 VRMS Extra low coupling capacity - typical 0.2 pF High Common Mode Rejection No base terminal connection for improved noise
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TCDT1100/
TCDT1100G
0303/IEC
E76222
IEC60950
IEC60065
VDE0884)
D-74025
08-Dec-03
IR-Diode
TCDT1101G
TCDT1102G
IEC60065
TCDT1100
TCDT1100G
TCDT1101
TCDT1102
VDE0884
E7622
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tcdt112
Abstract: TCDT1100 Series tcdt1102
Text: VISHAY TCDT1100/ TCDT1100G Vishay Semiconductors Optocoupler, Phototransistor Output Features • • • • Isolation Test Voltage 3750 VRMS Extra low coupling capacity - typical 0.2 pF High Common Mode Rejection No base terminal connection for improved noise
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TCDT1100/
TCDT1100G
0303/IEC
E76222
IEC60950
IEC60065
VDE0884)
D-74025
08-Dec-03
tcdt112
TCDT1100 Series
tcdt1102
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TCDT1101G
Abstract: No abstract text available
Text: TCDT1100/ TCDT1100G Vishay Semiconductors Optocoupler, Phototransistor Output Features • • • • Isolation Test Voltage 3750 VRMS Extra low coupling capacity - typical 0.2 pF High Common Mode Rejection No base terminal connection for improved noise immunity
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TCDT1100/
TCDT1100G
0303/IEC
2002/95/EC
2002/96/EC
D-74025
26-Oct-04
TCDT1101G
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4 PIN IC Optocoupler with Phototransistor Output
Abstract: phototransistor terminal identification TCDT1102 TCDT1103 TCDT1100 TCDT1101
Text: TCDT1100/TCDT1100G Vishay Semiconductors Optocoupler, Phototransistor Output FEATURES • Isolation test voltage 5300 VRMS • Extra low coupling capacity - typical 0.2 pF • High common mode rejection • No base terminal connection for improved noise immunity
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TCDT1100/TCDT1100G
TCDT1100/TCDT1100G
08-Apr-05
4 PIN IC Optocoupler with Phototransistor Output
phototransistor terminal identification
TCDT1102
TCDT1103
TCDT1100
TCDT1101
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TCDT1102G
Abstract: TCDT1100 TCDT1101 TCDT1102 TCDT1103
Text: TCDT1100/TCDT1100G Vishay Semiconductors Optocoupler, Phototransistor Output FEATURES • Isolation test voltage 5300 VRMS • Extra low coupling capacity - typical 0.2 pF • High common mode rejection • No base terminal connection for improved noise immunity
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TCDT1100/TCDT1100G
TCDT1100/TCDT1100G
18-Jul-08
TCDT1102G
TCDT1100
TCDT1101
TCDT1102
TCDT1103
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Untitled
Abstract: No abstract text available
Text: VISHAY TCDT1100/ TCDT1100G Vishay Semiconductors Optocoupler, Phototransistor Output Features • • • • Isolation Test Voltage 3750 VRMS Extra low coupling capacity - typical 0.2 pF High Common Mode Rejection No base terminal connection for improved noise
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TCDT1100/
TCDT1100G
0303/IEC
E76222
IEC60950
IEC60065
VDE0884)
D-74025
20-Apr-04
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phototransistor terminal identification
Abstract: TCDT1102G IEC60065 TCDT1100 TCDT1100G VDE0884
Text: TCDT1100/ TCDT1100G Vishay Semiconductors Optocoupler, Phototransistor Output Features • • • • Isolation Test Voltage 3750 VRMS Extra low coupling capacity - typical 0.2 pF High Common Mode Rejection No base terminal connection for improved noise immunity
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TCDT1100/
TCDT1100G
0303/IEC
2002/95/EC
2002/96/EC
08-Apr-05
phototransistor terminal identification
TCDT1102G
IEC60065
TCDT1100
TCDT1100G
VDE0884
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Untitled
Abstract: No abstract text available
Text: VISHAY CNY75A/ B/ C/ GA/ GB/ GC Vishay Semiconductors Optocoupler, Phototransistor Output, With Base Connection Features • Isolation materials according to UL94-VO • Pollution degree 2 DIN/VDE 0110 / resp. IEC 60664 • Climatic classification 55/100/21
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CNY75A/
UL94-VO
0303/IEC
D-74025
08-Dec-03
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sanrex THYRISTOR
Abstract: PWB200AA30 PWB200AA PWB200AA40
Text: THYRISTOR MODULE PWB200AA PWB200AA is a Thyristor module suitable for low voltage, 3 phase recifier applications. ● IT（AV）200A（each device） Surge Current 6000 A（60Hz） ● Easy Construction ● Non-isolated. Mounting base as common Anode terminal
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PWB200AA
PWB200AA
AV200Aeach
A60Hz
30max
6-110TAB
PWB200AA30
PWB200AA40
sanrex THYRISTOR
PWB200AA30
PWB200AA40
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Untitled
Abstract: No abstract text available
Text: MOSFET MODULE SF150BA50 UL;E76102 （M） SF150BA50 is a isolated power MOSFET module designed for fast swiching applications of high voltage and current. The mounting base of the module is electrically isolated from semiconductor elements for simple heatsink construction.
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SF150BA50
E76102
SF150BA50
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Untitled
Abstract: No abstract text available
Text: Ordering Stud base diodes are available in both Normal base cathode and Reverse (base anode) polarity. Use N or R respectively in code according to polarity required, e.g. N013 - normal polarity, R013 reverse polarity: (1N3899 - normal, 1N38S9R - reverse).
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1N3899
1N38S9R
SM04PCN046:
SM12CXC170
06LES
200AC
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wedge lamp 168
Abstract: wedge lamp 161 wedge lamp 194 ILI 2302 SF 183A
Text: 1 AMP flATA •■■■■«■■ wawm « ■m m 1-3%, T-4 and T-5 Wedge Base Lamps Lue M ÍTlpS/ Volts Watts 6 2W 6 6.3 6.3 6.3 Lumens M SCP hours riiameni shape T-4 T-3K 10mm 13mm T-5 1fimm Wedge Base Wedge Base Wedge Base W2.1 X 9.5d W2.1 x9.5d W2.1 X 9.5d
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286-20L
6583X3
6585X3
wedge lamp 168
wedge lamp 161
wedge lamp 194
ILI 2302
SF 183A
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2sc5200 toshiba
Abstract: Toshiba 2SC5200 toshiba 2sc5200 audio power amplifier 2sC5200, 2SA1943 2SA1943 toshiba 2SC5200 2sc5200 transistor use audio amplifiers amplifier 2-21F1A 2SA1943 power amplifier 2sc5200 2sa1943 TRANSISTOR
Text: TO SH IBA 2SC5200 TOSHIBA TRANSISTOR Complementary to 2SA1943 Recommended for 100W High Fidelity Audio Frequency Amplifier Output Stage. Ì— È MAXIMUM RATINGS Tc = 25°C CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage
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2SC5200
2SA1943
2sc5200 toshiba
Toshiba 2SC5200
toshiba 2sc5200 audio power amplifier
2sC5200, 2SA1943
2SA1943 toshiba
2SC5200
2sc5200 transistor use audio amplifiers amplifier
2-21F1A
2SA1943
power amplifier 2sc5200 2sa1943 TRANSISTOR
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toshiba 2sa965 audio power amplifier
Abstract: toshiba audio power amplifier 2SA965 2SC2235 transistor 2sC2235 0058669
Text: TO SH IBA 2SC2235 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC2235 Unit in mm AUDIO POWER AMPLIFIER APPLICATIONS 5.1 MAX. DRIVER STAGE AMPLIFIER APPLICATIONS • Complementary to 2SA965. MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Collector-Base Voltage
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2SC2235
2SA965.
O-92MOD
toshiba 2sa965 audio power amplifier
toshiba audio power amplifier
2SA965
2SC2235
transistor 2sC2235
0058669
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CM73
Abstract: lamps c-2f cm85 Scans-0080 CM8663 1 ow
Text: SUB-MINIATURE LAMPS INTERNATIONAL T -1 1/2 5mm Wedge Base W2x4*6d Lamp Number Volts Amps/ Watts Lumens MSCP Life (hours) Filament Shape 1103 1104 1105 1107 1108 60 60 6-0 12 0 12 0 0-03A 0 08A 10W 0 03A 1 OW 0-30 0 90 3-80 0 70 3 00 0024 007 0-30 0056 024
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T-13/4
CM73
lamps c-2f
cm85
Scans-0080
CM8663
1 ow
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2sd1220
Abstract: 2SB905
Text: 2SD1220 TO SH IBA TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS • SILICON NPN EPITAXIAL TYPE PCT PROCESS 2 S D 1 220 Complementary to 2SB905 MAXIMUM RATINGS (Tc = 25°C) SYMBOL CHARACTERISTIC Collector-Base Voltage v CBO Colleetor-Emitter Voltage v CEO
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2SD1220
2SB905
2sd1220
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2-7D101A
Abstract: 2SC3666
Text: TO SH IBA 2SC3666 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3666 Unit in mm AUDIO POWER AMPLIFIER APPLICATIONS • High DC Current Gain : hpE (l) = 100~320 MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Collector-Base Voltage Colleetor-Emitter Voltage
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2SC3666
2-7D101A
2SC3666
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