Untitled
Abstract: No abstract text available
Text: P h ilip s S e m ic o n d u c to rs ^ bb53B31 0038177 STT H IA P X Preliminary specification Silicon planar epitaxial transistor 2N5680 N AUER PHILIPS/DISCRETE bBE D QUICK REFERENCE DATA PARAMETER SYMBOL collector current MIN. MAX. UNIT - V - 120 V - 1 A Tcase < 25 °C
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bb53B31
2N5680
bb53T31
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Bfy51
Abstract: No abstract text available
Text: bTE T> m bbS3T31 DDSTTTD A3D H A P X 11 N AMER PHILIPS/DISCRETE II BFY50 BFY51 BFY52 SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in TO-39 metal envelopes intended for general purpose industrial applications. QUICK REFERENCE DATA BFY50 Collector-base voltage open emitter
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bbS3T31
BFY50
BFY51
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C6V2
Abstract: No abstract text available
Text: • ^53=531 0025732 354 M A R X N AMER PHILIPS/DISCRETE BZV55 SERIES L7E D 7 V VOLTAGE REGULATOR DIODES FOR SURFACE MOUNTING Silicon planar diodes designed fo r use as low-voltage stabilizers o r voltage references. They are available in the international standardized E24 ± 5% range, and also in tolerance ranges o f 2% and 3%.
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BZV55
OD80C
volt55
bb53t
0DE5744
bb53B31
002S7M5
C6V2
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE b^E J> • bbS3^31 0Q264Q7 126 H A P X Philips specification Silicon diffused power transistors QUICK REFERENCE DATA DESCRIPTION PINNING 1 2 3 SYMBOL VcESM
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0Q264Q7
BUT11F/BUT11AF
BUT11F
BUT11AF
11F/BUT11AF
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Abstract: No abstract text available
Text: BDX35 BDX36 BDX37 _ SILICON PLANAR EPITAXIAL POWER TRANSISTORS N-P-N transistors in TO-126 plastic envelopes intended for high current switching applications, e.g. inverters, and switching regulator circuits. QUICK REFERENCE DATA
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BDX35
BDX36
BDX37
O-126
G034flbD
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