equivalent transistor c 5888
Abstract: No abstract text available
Text: • Philips Semiconductors bbS3R31 0025318 350 H A P X N AUER PHILIPS/DISCRETE Product specification b7E NPN 9 GHz wideband transistor FEATURES BFS520 PINNING • High power gain PIN CONFIGURATION DESCRIPTION PIN • Low noise figure Code: N2 • High transition frequency
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bbS3R31
BFS520
OT323
OT323
OT323.
equivalent transistor c 5888
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Untitled
Abstract: No abstract text available
Text: • bbSBIBl Q0EMS73 113 « A P X A AMER PHILIPS/DISCRETE BCW 60 SERIES b?E D ; v SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N silicon transistors, in a microminiature plastic envelope, intended for low level, low noise, low frequency purpose applications in hybrid circuits.
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Q0EMS73
bbS3031
003457b
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S3C marking
Abstract: No abstract text available
Text: P hilips Sem iconductors bbS 3T31 0033540 N APX f lf l4 ANER Product specification PHILIPS/DISCRETE N-channel field-effect transistors PARAMETER • Low leakage level typ. 500 fA SYMBOL • High gain ±VDS drain-source voltage loss drain current • Low cut-off voltage.
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BF556A
BF556B
BF556C
BF556B
23SHt.
bbS3031
S3C marking
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apx transistor
Abstract: No abstract text available
Text: • bbS3T31 00Z353T 113 ■ APX Philips Semiconductors_ N APIER PHILIPS/ DISCR ETE b?E D BF545A; BF545B; BF545C N-channel silicon junction field-effect transistor FEATURES Product specification QUICK R EFER EN CE DATA MAX. UNIT “ 30 V BF545A
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bbS3T31
00Z353T
BF545A;
BF545B;
BF545C
BF545A
BF545B
apx transistor
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BB530
Abstract: No abstract text available
Text: • [3^53131 DDESMTti T47 ■ APX BF245A TO C N AUER PHILIPS/DISCRETE L7E D N-CHANNEL SILICON FIELD-EFFECT TRANSISTORS General purpose symmetrical N-channel planar epitaxial junction field-effect transistors in a plastic TO-92 variant; intended for applications in l.f. and d.c. amplifiers, and in h.f. amplifiers.
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BF245A
BF245A/0
0023SD4
bhS3T31
7Z62701
hbS3T31
BB530
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE QbE D ^53*131 ODllbhS 8 PHR605CT SERIES r - O .3 - 17 VERY FAST RECOVERY DOUBLE RECTIFIER DIODES Glass-passivated, high-efficiency double rectifier diodes in plastic envelopes which feature low forward voltage drop, very fast reverse recovery times and 'non-snap-off'. They are intended for use in
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PHR605CT
bbS3031
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