BC237
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET Chopper P–Channel — Depletion 2 SOURCE MMBFJ177LT1 3 GATE 1 DRAIN 3 1 MAXIMUM RATINGS Rating Drain–Gate Voltage Reverse Gate–Source Voltage Symbol Value Unit VDG 25 Vdc VGS r – 25 Vdc 2 CASE 318 – 08, STYLE 10
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MMBFJ177LT1
236AB)
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
BC237
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BC237
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET Chopper MMBFJ175LT1 P–Channel — Depletion Motorola Preferred Device 2 SOURCE 3 GATE 3 1 DRAIN 1 2 MAXIMUM RATINGS Rating Drain – Gate Voltage Reverse Gate – Source Voltage Symbol Value Unit VDG 25 V VGS r
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MMBFJ175LT1
236AB)
Ga218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
BC237
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motorola JFET 2N3819
Abstract: Y12 SO-16 transistor u310 VK200 rfc BC238 h parameter BC237 6 21 X2 marking code sot 363 BF245 common emitter amplifier for transistor bc107 sod-123 marking L2s
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET Transistor N–Channel 2 SOURCE MMBFU310LT1 Motorola Preferred Device 3 GATE 1 DRAIN 3 MAXIMUM RATINGS Rating 1 Symbol Value Unit Drain–Source Voltage VDS 25 Vdc Gate–Source Voltage VGS 25 Vdc IG 10 mAdc Symbol
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MMBFU310LT1
236AB)
Gat218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
motorola JFET 2N3819
Y12 SO-16
transistor u310
VK200 rfc
BC238 h parameter
BC237
6 21 X2 marking code sot 363
BF245
common emitter amplifier for transistor bc107
sod-123 marking L2s
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2n5210 equivalent
Abstract: replacement 2N5210 BC237 transistor BC107 specifications
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors 2N5209 2N5210 NPN Silicon COLLECTOR 3 2 BASE 1 EMITTER 1 2 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage VCEO 50 Vdc Collector – Base Voltage VCBO 50 Vdc Emitter – Base Voltage
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2N5209
2N5210
226AA)
U218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
2n5210 equivalent
replacement 2N5210
BC237
transistor BC107 specifications
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BF245 application note
Abstract: BC237 alternative bipolar transistors book MPS2369 equivalent
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Chopper Transistor MPS404A PNP Silicon COLLECTOR 3 Motorola Preferred Device 2 BASE 1 EMITTER MAXIMUM RATINGS 1 Rating Symbol Value Unit Collector – Emitter Voltage VCEO –35 Vdc Collector – Base Voltage VCBO –40
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MPS404A
226AA)
Symbol218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
BF245 application note
BC237
alternative bipolar transistors book
MPS2369 equivalent
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transistor equivalent book 2N5401
Abstract: 2n5401 equivalent BC237 918 TRANSISTOR PNP bc547 collector base emitter 2n5401 148 2n5400 replacement 2n2222 2n5401 2n5551
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors 2N5400 2N5401* PNP Silicon *Motorola Preferred Device COLLECTOR 3 2 BASE 1 EMITTER 1 2 MAXIMUM RATINGS Symbol 2N5400 2N5401 Unit Collector – Emitter Voltage Rating VCEO 120 150 Vdc Collector – Base Voltage
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2N5400
2N5401*
2N5401
226AA)
Resist218A
MSC1621T1
MSC2404
MSD1819A
MV1620
transistor equivalent book 2N5401
2n5401 equivalent
BC237
918 TRANSISTOR PNP
bc547 collector base emitter
2n5401 148
2n5400 replacement
2n2222 2n5401 2n5551
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BC237
Abstract: 08 6210 036 010
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistor MPSL51 PNP Silicon COLLECTOR 3 2 BASE 1 EMITTER 1 2 3 CASE 29–04, STYLE 1 TO–92 TO–226AA MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage VCEO –100 Vdc Collector – Base Voltage
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MPSL51
226AA)
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
MV1642
BC237
08 6210 036 010
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BC237
Abstract: 2507 14PIN transistor BF245 A
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Quad Darlington Transistor MPQ6426 NPN Silicon 14 13 12 11 10 9 8 5 6 7 NPN 1 2 3 4 MAXIMUM RATINGS 14 Rating Symbol Value Unit Collector – Emitter Voltage VCEO 30 Vdc Collector – Base Voltage VCBO 40 Vdc Emitter – Base Voltage
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MPQ6426
Effective218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
MV1642
BC237
2507 14PIN
transistor BF245 A
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MPQ7051
Abstract: BC237
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Quad Complementary Pair Transistor NPN/PNP Silicon 14 13 12 11 10 9 8 6 7 COMPLEMENTARY 1 2 3 4 5 MPQ7051 Voltage and current are negative for PNP transistors TYPE B Motorola Preferred Device MAXIMUM RATINGS Rating Symbol
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MPQ7051
Junction218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
MV1642
MPQ7051
BC237
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BC237
Abstract: BC108 plastic
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MGSF3454XT1 Preliminary Information Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single N-Channel Field Effect Transistors N–CHANNEL ENHANCEMENT–MODE TMOS MOSFET rDS(on) = 50 mΩ (TYP) Part of the GreenLine Portfolio of devices with energy–
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MGSF3454XT1
T218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
MV1642
BC237
BC108 plastic
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TSOP 48 thermal resistance
Abstract: BC237 Transistor BC107b motorola transistor 2N3819 BCY72
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMFT960T1 Medium Power Field Effect Transistor Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate TMOS SOT–223 for Surface Mount This TMOS medium power field effect transistor is designed for high speed, low loss power switching applications such as
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MMFT96218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
MV1642
MV1644
TSOP 48 thermal resistance
BC237
Transistor BC107b motorola
transistor 2N3819
BCY72
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BC237
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA One Watt Amplifier Transistor PNP Silicon MPS6726 MPS6727 COLLECTOR 3 2 BASE 1 EMITTER MAXIMUM RATINGS Rating Symbol Collector – Emitter Voltage Value Unit VCEO MPS6726 MPS6727 Collector – Base Voltage Vdc 2 VCBO MPS6726
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MPS6726
MPS6727
MPS6727
226AE)
Re218A
MSC1621T1
MSC2404
BC237
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BC237
Abstract: BC108 characteristic
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Quad Amplifier Transistors PNP Silicon 14 13 12 11 10 9 8 6 7 MPQ7091 MPQ7093* COMPLEMENTARY *Motorola Preferred Device 1 2 3 4 5 TYPE B MAXIMUM RATINGS Rating Symbol MPQ7091 MPQ7093 Unit Collector – Emitter Voltage
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MPQ7091
MPQ7093*
MPQ7091
MPQ7093
CHARA218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
BC237
BC108 characteristic
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BC237
Abstract: 2n2904 2n2905
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA One Watt Amplifier Transistors MPSW55 MPSW56* PNP Silicon COLLECTOR 3 *Motorola Preferred Device 2 BASE 1 EMITTER 1 MAXIMUM RATINGS 2 Rating Symbol MPSW55 MPSW56 Unit Collector – Emitter Voltage VCEO –60 –80 Vdc
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MPSW55
MPSW56*
MPSW55
MPSW56
226AE)
Ther218A
MSC1621T1
MSC2404
MSD1819A
MV1620
BC237
2n2904 2n2905
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BF245 TRANSISTOR
Abstract: transistor BF245 BC237 transistor motorola 2n3053 Transistor BC107b motorola transistor 2N3819
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PZTA64T1 PNP SmallĆSignal Darlington Transistor Motorola Preferred Device This PNP small-signal darlington transistor is designed for use in preamplifiers input applications or wherever it is necessary to have a high input impedance.
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OT-223
PZTA64T1
inch/1000
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
BF245 TRANSISTOR
transistor BF245
BC237
transistor motorola 2n3053
Transistor BC107b motorola
transistor 2N3819
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MPSa06 equivalent
Abstract: MPSA42 equivalent bf245 equivalent 2N5087 equivalent BC237 bf245a equivalent equivalent components of transistor bc107 2N2222A motorola MPSa56 equivalent EQUIVALENT TRANSISTOR bc109c
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Silicon Switching Diode BAS16WT1 Motorola Preferred Device 3 CATHODE 1 ANODE 3 MAXIMUM RATINGS TA = 25°C Symbol Max Unit Continuous Reverse Voltage VR 75 V Recurrent Peak Forward Current IR 200 mA IFM(surge) 500 mA
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BAS16WT1
70/SOT
RJ218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
MPSa06 equivalent
MPSA42 equivalent
bf245 equivalent
2N5087 equivalent
BC237
bf245a equivalent
equivalent components of transistor bc107
2N2222A motorola
MPSa56 equivalent
EQUIVALENT TRANSISTOR bc109c
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2N3819 MOTOROLA
Abstract: motorola 2N3819 BC237 MPS3563 diode marking w2 bc394 motorola MOTOROLA mvam108 motorola 2N2219 BC107B, MOTOROLA 2N4410 MOTOROLA
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MGSF3442VT1 Preliminary Information Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single N-Channel Field Effect Transistors N–CHANNEL ENHANCEMENT–MODE TMOS MOSFET rDS(on) = 58 mΩ (TYP) Part of the GreenLine Portfolio of devices with energy–
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MGSF3442VT1
T218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
MV1642
2N3819 MOTOROLA
motorola 2N3819
BC237
MPS3563
diode marking w2
bc394 motorola
MOTOROLA mvam108
motorola 2N2219
BC107B, MOTOROLA
2N4410 MOTOROLA
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K 2056 transistor
Abstract: BC237
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Low rDS on Small-Signal MOSFETs TMOS Single N-Channel Field Effect Transistors Part of the GreenLine Portfolio of devices with energy–conserving traits. These miniature surface mount MOSFETs utilize Motorola’s
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MMBF0201NLT1
Mo218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
MV1642
K 2056 transistor
BC237
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BC310
Abstract: No abstract text available
Text: Medium Power Amplifiers and Switches TYPE NO. POLA RITY CASE MAXIMUM RATINGS HFE Pd IC VCEO mW (A) (V) min max IC (mA) VCE (V) VCE(sat) max (V) (A) 150 100 100 100 100 1 10 10 1 1 0.35 1.5 0.8 1 1 0.15 1 0.3 1 1 40 40 200 300 300 100 100 2 1 1 1 1 0.4
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BC119
BC138
BC139
BC140
BC141
BC142
BC143
BC144
BC160
BC161
BC310
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BC286
Abstract: BC287 BC340 BC231 BC138 BC232 BC211 BC388 BC311 BC223
Text: Medium Power Amplifiers and Switches H P O L A R IT Y M A X IM U M R A T IN G S CASE BC119 BC138 BC139 BC140 BC141 N N P N N TO-39 TO-39 TO-39 TO-39 TO-39 800 800 700 800 800 1 1 0.5 1 1 1 30 30 40 40 60 40 35 40 40 40 BC142 BC143 BC144 BC160 BC161 N P N P
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OCR Scan
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PDF
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BC119
BC139
BC138
BC139
BC119
BC140
BC160
BC141
BC161
BC142
BC286
BC287
BC340
BC231
BC232
BC211
BC388
BC311
BC223
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BC377 -25
Abstract: BC345 BC142 BC215 BC377 BC138 BC311 BC388 BC340 BC360
Text: Medium Power Amplifiers and Switches TYPE NO. H,¡"E CASE BC119 BC138 BC139 BC140 BC141 N N P N N TO-39 TO-39 TO-39 TO-39 TO-39 800 800 700 800 800 1 1 0.5 1 1 30 30 40 40 60 40 35 40 40 40 BC142 BC143 BC144 BC160 BC161 N P N P P TO-39 TO-39 TO-39 TO-39 TO-39
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OCR Scan
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PDF
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BC119
BC138
BC139
BC140
BC141
BC142
BC143
BC144
BC160
BC161
BC377 -25
BC345
BC215
BC377
BC311
BC388
BC340
BC360
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2N3643
Abstract: 2N2222 2N3643 TO-105 2N2219/2N2222 bc140 high voltage npn to-92 BC727 2N2219 2N3300 2N3302
Text: FAIRCHILD TRANSISTORS SMALL SIGNAL GENERAL PURPOSE AMPLIFIER AND SWITCHING TRANSISTORS BY ASCENDING VqEO (Cont’d) (ALSO SEE LOW LEVEL AND HIGH VOLTAGE SECTION) DEVK : e NO. Item Po arity NPN PNP hFE VCEO @ >C (VCER) (hfe) V rnA Min/Max Min VCE(sat) V @ lc
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OCR Scan
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PDF
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2N3641
T0-105
2N3300
2N3302
2N2219
2N2222
2N3643
O-105
PN3643
2N1132
2N3643
2N2222
2N3643 TO-105
2N2219/2N2222
bc140
high voltage npn to-92
BC727
2N2219
2N3300
2N3302
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BC106B
Abstract: BCI07A bc177 TO-92 BCI07B
Text: DEVICE TYPE PACKAGE BVCEO BVCBO BVEBO C BO 9 VCB |V> M IN |V| MIN VI MIN |mAI M A X |V> HFE @ VC & 1C MIN -M A X (V |mA] COB FT (pi) MAX |MHl| NF Idbl MAX BC10> BCI07A BCI07B BC108 BC108A NPN NPN NPN NPN NPN TO-18 TO -18 TO -18 TO -18 TO-18 45 45 45 20 20
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BCI07A
BCI07B
BC108
BC108A
BC106B
BC109
BC109B
BC109C
BC168B
BC168C
BC106B
bc177 TO-92
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BC377 -25
Abstract: BC286 BC232 BC377 BC287 BC340 BC360 BC343
Text: Medium Power Amplifiers and Switches TYPE NO. POLA CASE RITY M AXIMUM RATINGS VCE0 Pd Ic ^CER * mW (A) (V) H FE ^ C E (sa t) min max fr C 0b min max COMPLE MENTARY TYPE VCE max Ic (niA) (V) (V) (A) 150 100 100 100 100 1 10 10 1 1 0.35 1.5 0.8 1 1 0.15
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OCR Scan
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PDF
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BC140
BC142
BC143
BC144
BC160
BC185
BC223
BC231
BC232
BC286
BC377 -25
BC377
BC287
BC340
BC360
BC343
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