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    BC140-10 TO92 Search Results

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    BC237

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET Chopper P–Channel — Depletion 2 SOURCE MMBFJ177LT1 3 GATE 1 DRAIN 3 1 MAXIMUM RATINGS Rating Drain–Gate Voltage Reverse Gate–Source Voltage Symbol Value Unit VDG 25 Vdc VGS r – 25 Vdc 2 CASE 318 – 08, STYLE 10


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    PDF MMBFJ177LT1 236AB) MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 BC237

    BC237

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET Chopper MMBFJ175LT1 P–Channel — Depletion Motorola Preferred Device 2 SOURCE 3 GATE 3 1 DRAIN 1 2 MAXIMUM RATINGS Rating Drain – Gate Voltage Reverse Gate – Source Voltage Symbol Value Unit VDG 25 V VGS r


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    PDF MMBFJ175LT1 236AB) Ga218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 BC237

    motorola JFET 2N3819

    Abstract: Y12 SO-16 transistor u310 VK200 rfc BC238 h parameter BC237 6 21 X2 marking code sot 363 BF245 common emitter amplifier for transistor bc107 sod-123 marking L2s
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET Transistor N–Channel 2 SOURCE MMBFU310LT1 Motorola Preferred Device 3 GATE 1 DRAIN 3 MAXIMUM RATINGS Rating 1 Symbol Value Unit Drain–Source Voltage VDS 25 Vdc Gate–Source Voltage VGS 25 Vdc IG 10 mAdc Symbol


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    PDF MMBFU310LT1 236AB) Gat218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 motorola JFET 2N3819 Y12 SO-16 transistor u310 VK200 rfc BC238 h parameter BC237 6 21 X2 marking code sot 363 BF245 common emitter amplifier for transistor bc107 sod-123 marking L2s

    2n5210 equivalent

    Abstract: replacement 2N5210 BC237 transistor BC107 specifications
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors 2N5209 2N5210 NPN Silicon COLLECTOR 3 2 BASE 1 EMITTER 1 2 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage VCEO 50 Vdc Collector – Base Voltage VCBO 50 Vdc Emitter – Base Voltage


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    PDF 2N5209 2N5210 226AA) U218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 2n5210 equivalent replacement 2N5210 BC237 transistor BC107 specifications

    BF245 application note

    Abstract: BC237 alternative bipolar transistors book MPS2369 equivalent
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Chopper Transistor MPS404A PNP Silicon COLLECTOR 3 Motorola Preferred Device 2 BASE 1 EMITTER MAXIMUM RATINGS 1 Rating Symbol Value Unit Collector – Emitter Voltage VCEO –35 Vdc Collector – Base Voltage VCBO –40


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    PDF MPS404A 226AA) Symbol218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 BF245 application note BC237 alternative bipolar transistors book MPS2369 equivalent

    transistor equivalent book 2N5401

    Abstract: 2n5401 equivalent BC237 918 TRANSISTOR PNP bc547 collector base emitter 2n5401 148 2n5400 replacement 2n2222 2n5401 2n5551
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors 2N5400 2N5401* PNP Silicon *Motorola Preferred Device COLLECTOR 3 2 BASE 1 EMITTER 1 2 MAXIMUM RATINGS Symbol 2N5400 2N5401 Unit Collector – Emitter Voltage Rating VCEO 120 150 Vdc Collector – Base Voltage


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    PDF 2N5400 2N5401* 2N5401 226AA) Resist218A MSC1621T1 MSC2404 MSD1819A MV1620 transistor equivalent book 2N5401 2n5401 equivalent BC237 918 TRANSISTOR PNP bc547 collector base emitter 2n5401 148 2n5400 replacement 2n2222 2n5401 2n5551

    BC237

    Abstract: 08 6210 036 010
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistor MPSL51 PNP Silicon COLLECTOR 3 2 BASE 1 EMITTER 1 2 3 CASE 29–04, STYLE 1 TO–92 TO–226AA MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage VCEO –100 Vdc Collector – Base Voltage


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    PDF MPSL51 226AA) MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 BC237 08 6210 036 010

    BC237

    Abstract: 2507 14PIN transistor BF245 A
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Quad Darlington Transistor MPQ6426 NPN Silicon 14 13 12 11 10 9 8 5 6 7 NPN 1 2 3 4 MAXIMUM RATINGS 14 Rating Symbol Value Unit Collector – Emitter Voltage VCEO 30 Vdc Collector – Base Voltage VCBO 40 Vdc Emitter – Base Voltage


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    PDF MPQ6426 Effective218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 BC237 2507 14PIN transistor BF245 A

    MPQ7051

    Abstract: BC237
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Quad Complementary Pair Transistor NPN/PNP Silicon 14 13 12 11 10 9 8 6 7 COMPLEMENTARY 1 2 3 4 5 MPQ7051 Voltage and current are negative for PNP transistors TYPE B Motorola Preferred Device MAXIMUM RATINGS Rating Symbol


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    PDF MPQ7051 Junction218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 MPQ7051 BC237

    BC237

    Abstract: BC108 plastic
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MGSF3454XT1 Preliminary Information Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single N-Channel Field Effect Transistors N–CHANNEL ENHANCEMENT–MODE TMOS MOSFET rDS(on) = 50 mΩ (TYP)  Part of the GreenLine Portfolio of devices with energy–


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    PDF MGSF3454XT1 T218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 BC237 BC108 plastic

    TSOP 48 thermal resistance

    Abstract: BC237 Transistor BC107b motorola transistor 2N3819 BCY72
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMFT960T1 Medium Power Field Effect Transistor Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate TMOS SOT–223 for Surface Mount This TMOS medium power field effect transistor is designed for high speed, low loss power switching applications such as


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    PDF MMFT96218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 MV1644 TSOP 48 thermal resistance BC237 Transistor BC107b motorola transistor 2N3819 BCY72

    BC237

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA One Watt Amplifier Transistor PNP Silicon MPS6726 MPS6727 COLLECTOR 3 2 BASE 1 EMITTER MAXIMUM RATINGS Rating Symbol Collector – Emitter Voltage Value Unit VCEO MPS6726 MPS6727 Collector – Base Voltage Vdc 2 VCBO MPS6726


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    PDF MPS6726 MPS6727 MPS6727 226AE) Re218A MSC1621T1 MSC2404 BC237

    BC237

    Abstract: BC108 characteristic
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Quad Amplifier Transistors PNP Silicon 14 13 12 11 10 9 8 6 7 MPQ7091 MPQ7093* COMPLEMENTARY *Motorola Preferred Device 1 2 3 4 5 TYPE B MAXIMUM RATINGS Rating Symbol MPQ7091 MPQ7093 Unit Collector – Emitter Voltage


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    PDF MPQ7091 MPQ7093* MPQ7091 MPQ7093 CHARA218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 BC237 BC108 characteristic

    BC237

    Abstract: 2n2904 2n2905
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA One Watt Amplifier Transistors MPSW55 MPSW56* PNP Silicon COLLECTOR 3 *Motorola Preferred Device 2 BASE 1 EMITTER 1 MAXIMUM RATINGS 2 Rating Symbol MPSW55 MPSW56 Unit Collector – Emitter Voltage VCEO –60 –80 Vdc


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    PDF MPSW55 MPSW56* MPSW55 MPSW56 226AE) Ther218A MSC1621T1 MSC2404 MSD1819A MV1620 BC237 2n2904 2n2905

    BF245 TRANSISTOR

    Abstract: transistor BF245 BC237 transistor motorola 2n3053 Transistor BC107b motorola transistor 2N3819
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PZTA64T1 PNP SmallĆSignal Darlington Transistor Motorola Preferred Device This PNP small-signal darlington transistor is designed for use in preamplifiers input applications or wherever it is necessary to have a high input impedance.


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    PDF OT-223 PZTA64T1 inch/1000 MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 BF245 TRANSISTOR transistor BF245 BC237 transistor motorola 2n3053 Transistor BC107b motorola transistor 2N3819

    MPSa06 equivalent

    Abstract: MPSA42 equivalent bf245 equivalent 2N5087 equivalent BC237 bf245a equivalent equivalent components of transistor bc107 2N2222A motorola MPSa56 equivalent EQUIVALENT TRANSISTOR bc109c
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Silicon Switching Diode BAS16WT1 Motorola Preferred Device 3 CATHODE 1 ANODE 3 MAXIMUM RATINGS TA = 25°C Symbol Max Unit Continuous Reverse Voltage VR 75 V Recurrent Peak Forward Current IR 200 mA IFM(surge) 500 mA


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    PDF BAS16WT1 70/SOT RJ218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MPSa06 equivalent MPSA42 equivalent bf245 equivalent 2N5087 equivalent BC237 bf245a equivalent equivalent components of transistor bc107 2N2222A motorola MPSa56 equivalent EQUIVALENT TRANSISTOR bc109c

    2N3819 MOTOROLA

    Abstract: motorola 2N3819 BC237 MPS3563 diode marking w2 bc394 motorola MOTOROLA mvam108 motorola 2N2219 BC107B, MOTOROLA 2N4410 MOTOROLA
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MGSF3442VT1 Preliminary Information Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single N-Channel Field Effect Transistors N–CHANNEL ENHANCEMENT–MODE TMOS MOSFET rDS(on) = 58 mΩ (TYP)  Part of the GreenLine Portfolio of devices with energy–


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    PDF MGSF3442VT1 T218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 2N3819 MOTOROLA motorola 2N3819 BC237 MPS3563 diode marking w2 bc394 motorola MOTOROLA mvam108 motorola 2N2219 BC107B, MOTOROLA 2N4410 MOTOROLA

    K 2056 transistor

    Abstract: BC237
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  Low rDS on Small-Signal MOSFETs TMOS Single N-Channel Field Effect Transistors Part of the GreenLine Portfolio of devices with energy–conserving traits.  These miniature surface mount MOSFETs utilize Motorola’s


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    PDF MMBF0201NLT1 Mo218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 K 2056 transistor BC237

    BC310

    Abstract: No abstract text available
    Text: Medium Power Amplifiers and Switches TYPE NO. POLA­ RITY CASE MAXIMUM RATINGS HFE Pd IC VCEO mW (A) (V) min max IC (mA) VCE (V) VCE(sat) max (V) (A) 150 100 100 100 100 1 10 10 1 1 0.35 1.5 0.8 1 1 0.15 1 0.3 1 1 40 40 200 300 300 100 100 2 1 1 1 1 0.4


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    PDF BC119 BC138 BC139 BC140 BC141 BC142 BC143 BC144 BC160 BC161 BC310

    BC286

    Abstract: BC287 BC340 BC231 BC138 BC232 BC211 BC388 BC311 BC223
    Text: Medium Power Amplifiers and Switches H P O L A R IT Y M A X IM U M R A T IN G S CASE BC119 BC138 BC139 BC140 BC141 N N P N N TO-39 TO-39 TO-39 TO-39 TO-39 800 800 700 800 800 1 1 0.5 1 1 1 30 30 40 40 60 40 35 40 40 40 BC142 BC143 BC144 BC160 BC161 N P N P


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    PDF BC119 BC139 BC138 BC139 BC119 BC140 BC160 BC141 BC161 BC142 BC286 BC287 BC340 BC231 BC232 BC211 BC388 BC311 BC223

    BC377 -25

    Abstract: BC345 BC142 BC215 BC377 BC138 BC311 BC388 BC340 BC360
    Text: Medium Power Amplifiers and Switches TYPE NO. H,¡"E CASE BC119 BC138 BC139 BC140 BC141 N N P N N TO-39 TO-39 TO-39 TO-39 TO-39 800 800 700 800 800 1 1 0.5 1 1 30 30 40 40 60 40 35 40 40 40 BC142 BC143 BC144 BC160 BC161 N P N P P TO-39 TO-39 TO-39 TO-39 TO-39


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    PDF BC119 BC138 BC139 BC140 BC141 BC142 BC143 BC144 BC160 BC161 BC377 -25 BC345 BC215 BC377 BC311 BC388 BC340 BC360

    2N3643

    Abstract: 2N2222 2N3643 TO-105 2N2219/2N2222 bc140 high voltage npn to-92 BC727 2N2219 2N3300 2N3302
    Text: FAIRCHILD TRANSISTORS SMALL SIGNAL GENERAL PURPOSE AMPLIFIER AND SWITCHING TRANSISTORS BY ASCENDING VqEO (Cont’d) (ALSO SEE LOW LEVEL AND HIGH VOLTAGE SECTION) DEVK : e NO. Item Po arity NPN PNP hFE VCEO @ >C (VCER) (hfe) V rnA Min/Max Min VCE(sat) V @ lc


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    PDF 2N3641 T0-105 2N3300 2N3302 2N2219 2N2222 2N3643 O-105 PN3643 2N1132 2N3643 2N2222 2N3643 TO-105 2N2219/2N2222 bc140 high voltage npn to-92 BC727 2N2219 2N3300 2N3302

    BC106B

    Abstract: BCI07A bc177 TO-92 BCI07B
    Text: DEVICE TYPE PACKAGE BVCEO BVCBO BVEBO C BO 9 VCB |V> M IN |V| MIN VI MIN |mAI M A X |V> HFE @ VC & 1C MIN -M A X (V |mA] COB FT (pi) MAX |MHl| NF Idbl MAX BC10> BCI07A BCI07B BC108 BC108A NPN NPN NPN NPN NPN TO-18 TO -18 TO -18 TO -18 TO-18 45 45 45 20 20


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    PDF BCI07A BCI07B BC108 BC108A BC106B BC109 BC109B BC109C BC168B BC168C BC106B bc177 TO-92

    BC377 -25

    Abstract: BC286 BC232 BC377 BC287 BC340 BC360 BC343
    Text: Medium Power Amplifiers and Switches TYPE NO. POLA­ CASE RITY M AXIMUM RATINGS VCE0 Pd Ic ^CER * mW (A) (V) H FE ^ C E (sa t) min max fr C 0b min max COMPLE­ MENTARY TYPE VCE max Ic (niA) (V) (V) (A) 150 100 100 100 100 1 10 10 1 1 0.35 1.5 0.8 1 1 0.15


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    PDF BC140 BC142 BC143 BC144 BC160 BC185 BC223 BC231 BC232 BC286 BC377 -25 BC377 BC287 BC340 BC360 BC343