OF TRANSISTOR BC337
Abstract: TRANSISTOR BC337-25 transistor 33725 TN3019A bc337 m transistor BC337-16 BC337-16 BC337-25 CBVK741B019 F63TNR
Text: BC337-16 / BC337-25 BC337-16 BC337-25 E B TO-92 C NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 500 mA. Sourced from Process 12. See TN3019A for characteristics. Absolute Maximum Ratings*
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BC337-16
BC337-25
BC337-16
TN3019A
OF TRANSISTOR BC337
TRANSISTOR BC337-25
transistor 33725
bc337 m
transistor BC337-16
BC337-25
CBVK741B019
F63TNR
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Untitled
Abstract: No abstract text available
Text: BC337-16 / BC337-25 BC337-16 BC337-25 E B TO-92 C NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 500 mA. Sourced from Process 12. See TN3019A for characteristics. Absolute Maximum Ratings*
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BC337-16
BC337-25
BC337-16
TN3019A
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bc337 cross-reference
Abstract: bc337-16 bc337 fairchild bc337-25 BC-337-16 bc33716 BC33725 BC33716 cross
Text: BC337-16 / BC337-25 BC337-16 BC337-25 E B TO-92 C NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 500 mA. Sourced from Process 12. See TN3019A for characteristics. Absolute Maximum Ratings*
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BC337-16
BC337-25
TN3019A
BC337
BC33716TA
BC33716BU
bc337 cross-reference
bc337 fairchild
bc337-25
BC-337-16
bc33716
BC33725
BC33716 cross
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C 337-25
Abstract: C 33725 BC337-25 NPN general purpose transistor BC337 BC337-16 BC337 NPN transistor datasheet BC337 bc33716 BC-337-16 BC33725
Text: BC337-16 BC337-25 E B TO-92 C NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 500 mA. Sourced from Process 12. See TN3019A for characteristics. Absolute Maximum Ratings*
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BC337-16
BC337-25
TN3019A
BC337-16
C 337-25
C 33725
BC337-25
NPN general purpose transistor BC337
BC337 NPN transistor datasheet
BC337
bc33716
BC-337-16
BC33725
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2n185
Abstract: BC3 csr 2N244 2N200 BC337-18 2N326 2N176 BC337-16-5 BC337-10 Delco
Text: LOW-POWER SILICON NPN Item Number Part Number 10 15 20 2N2523 MPS929 MPS930 MPS930 BC485 BC485-18 BC485-5 BC485L BC485L18 BC485L5 ~~g~:~g BC337-10 2N3046 2N3047 2N3048 2N2639 2N2640 2N2641 2SC828A ~~~~-5 25 30 BC302-5 BC302-5 MT4101 PE210D 4101 4101 2N2434
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2N2523
MPS929
MPS930
BC485
BC485-18
2n185
BC3 csr
2N244
2N200
BC337-18
2N326
2N176
BC337-16-5
BC337-10
Delco
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BC337-18
Abstract: JC5010 sot23 h23 LOW-POWER SILICON NPN BC337-16-18 PE210 BC107 to92 BC337-16-5 BC337-10 mps92
Text: LOW-POWER SILICON NPN Item Number Part Number 10 15 20 2N2523 MPS929 MPS930 MPS930 BC485 BC485-18 BC485-5 BC485L BC485L18 BC485L5 ~~g~:~g BC337-10 2N3046 2N3047 2N3048 2N2639 2N2640 2N2641 2SC828A ~~~~-5 25 30 BC302-5 BC302-5 MT4101 PE210D 4101 4101 2N2434
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2N2523
MPS929
MPS930
BC485
BC485-18
OT-23
O-206M
O-226M
BC337-18
JC5010
sot23 h23
LOW-POWER SILICON NPN
BC337-16-18
PE210
BC107 to92
BC337-16-5
BC337-10
mps92
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CBC337
Abstract: BC337 BC337 figure MOTOROLA bc338-40 BC337 MOTOROLA NPN bc338 BC338 bc337-40 le
Text: MOTOROLA Order this document by BC337/D SEMICONDUCTOR TECHNICAL DATA A m plifier Transistors NPN Silicon BC337,- 16,-25,-40 BC338,- 16,-25,-40 COLLECTOR 1 EMITTER MAXIMUM RATINGS Rating Symbol BC337 BC338 Unit C o lle c to r-E m itte r Voltage VCEO 45 25 Vdc
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BC337/D
BC337
BC338
O-226AA)
CBC337
BC337 figure
MOTOROLA bc338-40
BC337 MOTOROLA
NPN bc338
bc337-40 le
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bc337-40 npn transistor
Abstract: BC337 bc338 complementary BC337A JA02 BC337-40 BC33840
Text: BC337 BC337A BC338 SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in plastic TO-92 package, prim arily intended fo r use in driver and ou tput stages of audio amplifiers. The BC337, BC337A, BC338 are complementary to the BC327, BC327A and BC328 respectively.
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BC337
BC337A
BC338
BC337,
BC337A,
BC338
BC327,
BC327A
BC328
bc337-40 npn transistor
bc338 complementary
JA02
BC337-40
BC33840
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C 337-25
Abstract: BC337 figure BC337 MOTOROLA bc338-40 BC337-40 SBC337
Text: M O TO R O LA SEMICONDUCTOR TECHNICAL DATA Am plifier Transistors NPN Silicon BC337,-1 6 ,-2 5 ,-4 0 B C 338,-16 ,-2 5 ,-4 0 COLLECTOR 1 3 EMITTER MAXIMUM RATINGS Rating C ollector-E m itter Voltage Symbol BC337 BC338 25 Vdc 30 Vdc Unit VCEO 45 C ollector-B ase Voltage
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BC337
BC337
BC338
BC338
C 337-25
BC337 figure
MOTOROLA bc338-40
BC337-40
SBC337
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C 337-25
Abstract: BC337-25 bc33725 BC337-16 BC-337-16 bc33716 BC337
Text: S E M IC O N D U C T O R tm BC337-16 BC337-25 NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 500 m A. Sourced from Process 12. See TN 3019A for characteristics. Absolute Maximum RâtinÇjS
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BC337-16
BC337-25
C 337-25
BC337-25
bc33725
BC-337-16
bc33716
BC337
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BC338C
Abstract: No abstract text available
Text: NPN EPITAXIAL SILICON TRANSISTOR BC337/338 SWITCHING AND AMPLIFIER APPLICATIONS • Suitable fo r A F-D river stages and low pow er output stages • C om plem ent to BC337/BC 328 TO -92 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Sym bol C ollector-E m ltter Voltage
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BC337/338
BC337/BC
BC337
BC338
BC338C
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TRANSISTOR pnp BC328
Abstract: BC327 BC328 BC337 pnp transistor
Text: BC327/328 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS • SUITABLE FOR AF-ORIVER STAGES AND LOW POWER OUTPUT STAGES •Complement to BC337/BC338 AB SO LU TE MAXIMUM RATINGS Ta = 25°C Characteristic Sym bol C ollector Em itter Voltage
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BC327/328
BC337/BC338
BC327
BC328
-10mA,
00250S7
TRANSISTOR pnp BC328
BC327
BC328
BC337 pnp transistor
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Untitled
Abstract: No abstract text available
Text: BC337, BC338 Small Signal Transistors NPN TO-92 _ FEATURES_ NPN Silicon Epitaxial Planar Transistors for switching and am plifier applications. Especially suitable for AF-driver stages and low power output stages. .098 ( 2 . 5 ) *
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BC337,
BC338
BC328
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BC337 pnp transistor
Abstract: No abstract text available
Text: PNP EPITAXIAL SILICON TRANSISTOR BC327/328 SWITCHING AND AMPLIFIER APPLICATIONS TO-92 • Suitable for AF-Driver stages and low power output stages • Complement to BC337/BC338 ABSOLUTE MAXIMUM RATINGS TA= 2 5 t C haracteristic Sym bol Collector-Em itter Voltage
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BC327/328
BC337/BC338
SC327
BC328
BC327
BC337 pnp transistor
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BC327
Abstract: BC307 BC328 BC338 BC337 pnp transistor
Text: PNP EPITAXIAL SILICON TRANSISTOR BC327/328 SWITCHING AND AMPLIFIER APPLICATIONS • Suitable for A F-D river stages and low pow er output stages • C om plem ent to BC337/BC338 ABSOLUTE MAXIMUM RATINGS TA=25°C Characteristic Sym bol C ollector-E m itter Voltage
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BC327/328
BC337/BC338
BC327
BC328
-10mA,
BC328
BC327
BC307
BC338
BC337 pnp transistor
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C 337-25
Abstract: C 33725 BC337-16 BC-337-16 BC337-25 bc33716 NPN 33725 BC337 33725
Text: S E M IC O N D U C T O R tm BC337-16 BC337-25 NPN General Purpose Amplifier T h is d e v ic e is d e s ig n e d fo r use as g e n e ra l pu rp o se a m p lifie rs a n d sw itches requiring collecto r c u rrents to 500 m A. S o u rce d from P roce ss 12. S e e T N 3 0 1 9 A fo r ch a ra c te ris tic s.
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BC337-16
BC337-25
SeeTN3019A
C 337-25
C 33725
BC-337-16
BC337-25
bc33716
NPN 33725
BC337
33725
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C 337-25
Abstract: C 33725 c337 pnp transistor C 337-40 c 33740 transistor NPN c337 BC337 sot54 c337 transistor transistor c337 C337 W 63
Text: DISCRETE SEMICONDUCTORS Product specification Supersedes data of 1997 Mar 10 Philips Sem iconductors 1999 Apr 15 PHILIPS Philips Semiconductors Product specification NPN general purpose transistor BC337 FEATURES PINNING • High current max. 500 mA PIN • Low voltage (max. 45 V).
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BC337
BC327.
115002/00/03/pp8
C 337-25
C 33725
c337 pnp transistor
C 337-40
c 33740
transistor NPN c337
BC337 sot54
c337 transistor
transistor c337
C337 W 63
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BC337
Abstract: DS21610
Text: BC337 NPN EPITAXIAL PLANAR TRANSISTOR Features Suitable for AF Driver and Low Power Output Stage Applications Available in Sub-Groups Graded by DC Current Gain 625mW Power Dissipation T B TO-92 Mechanical Data Case: TO-92, Plastic Leads: Solderable per MIL-STD-202,
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BC337
625mW
MIL-STD-202,
300mA
500mA,
50MHz
DS21610
BC337
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BC337
Abstract: TRANSISTOR BC338 bc337 fairchild TRANSISTOR bc337 40 BC-337 bc337 transistor BC338-25 BC337 NPN transistor NPN TRANSISTOR BC337 40 BC337 hfe
Text: NPN EPITAXIAL SILICON TRANSISTOR BC337/338 SWITCHING AND AMPLIFIER APPLICATIONS • Suitable for A F-D river stages and low pow er output stages • C om plem ent to BC 337/BC 328 T O -92 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Sym bol C ollector-E m itter Voltage
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BC337/338
BC337/BC328
BC337
BC338
BC337
TRANSISTOR BC338
bc337 fairchild
TRANSISTOR bc337 40
BC-337
bc337 transistor
BC338-25
BC337 NPN transistor
NPN TRANSISTOR BC337 40
BC337 hfe
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DS21
Abstract: BC337 bc337 transistor
Text: BC337 VISHAY NPN EPITAXIAL PLANAR TRANSISTOR /Li T E M I ri / POWERSEMICONDUCTOR I Features • • • Suitable for AF Driver and Low Power Output Stage Applications Available in Sub-Groups Graded by DC Current Gain 625mW Power Dissipation kM MM TO-92 Mechanical Data_
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BC337
625mW
MIL-STD-202,
800LECTOR
DS21
BC337
bc337 transistor
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BC337A
Abstract: No abstract text available
Text: D BC337 BC337A BC338 ^ 5 3 ^ 3 1 Q027530 5T4 H A P X N AUER PHILIPS/DISCRETE _ / V _ SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in plastic TO-92 envelopes, primarily intended for use in driver and output stages of audio amplifiers.
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BC337
BC337A
BC338
Q027530
BC337,
BC337A,
BC338
BC327,
BC327A
BC328
BC337A
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BC337A
Abstract: No abstract text available
Text: BC337 BC337A BC338 FOR MORE DETAILED INFORMATION SEE LATEST ISSUE OF HANDBOOK SC04 OR DATA SHEET SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in plastic TO-92 package, prim arily intended fo r use in driver and ou tput stages o f audio amplifiers.
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BC337
BC337A
BC338
BC337,
BC337A,
BC338
BC327,
BC327A
BC328
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BC337 MOTOROLA
Abstract: BC337 BC337 figure
Text: MAXIMUM RATINGS Rating Symbol BC337 BC338 Unit C o lle ctor-E m itter Voltage v CEO 45 25 Vdc C ollector-Base Voltage v CBO 50 30 Vdc Em itter-Base Voltage v EBO 5.0 Vdc Collector C urrent — Continuous 'c 800 m Adc TDtal Device D issipation ui T a = 25'C
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BC337
BC338
BC337,
BC338,
BC337 MOTOROLA
BC337 figure
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OF TRANSISTOR BC337
Abstract: BC337 leads
Text: BC337 VISHAY NPN EPITAXIAL PLANAR TRANSISTOR / u T E M ir I POWER SEMICONDUCTOR J Features • • • Suitable for AF Driver and Low Power Output Stage Applications Available in Sub-Groups Graded by DC Current Gain 625mW Power Dissipation E J L A TO-92
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BC337
625mW
MIL-STD-202,
DS21610
OF TRANSISTOR BC337
BC337 leads
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