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    BC337 PNP TRANSISTOR Search Results

    BC337 PNP TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    BC337 PNP TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BC337-25

    Abstract: bc33725 BC337-40 BC33740 bc337 BC337-40 t d bc337 40 BC337-40 TO92 BC337 NPN transistor datasheet BC327-25
    Text: BC337-25 BC337-40 SMALL SIGNAL NPN TRANSISTORS PRELIMINARY DATA • ■ ■ Type Marking BC337-25 BC337-25 BC337-40 BC337-40 SILICON EPITAXIAL PLANAR NPN TRANSISTORS TO-92 PACKAGE SUITABLE FOR THROUGH-HOLE PCB ASSEMBLY THE PNP COMPLEMENTARY TYPES ARE BC327-25 AND BC327-40 RESPECTIVELY


    Original     		PDF BC337-25 BC337-40 BC327-25 BC327-40 BC337-25 bc33725 BC337-40 BC33740 bc337 BC337-40 t d bc337 40 BC337-40 TO92 BC337 NPN transistor datasheet

    BC327

    Abstract: pin configuration Bc337 BC337 BC337 npn pin configuration Bc327 BC33716
    Text: BC327 & BC337 General Purpose Transistors General Description and Suggested Applications: • PNP/NPN Silicon Planar Epitaxial Transistors. • Complementary Transistors for use in Driver and Output Stages of Audio Amplifiers BC327 PNP BC337 NPN TO-92 Plastic Package


    Original     		PDF BC327 BC337 BC327 BC337 pin configuration Bc337 BC337 npn pin configuration Bc327 BC33716

    bc327

    Abstract: BC327-25 BC327-40 BC32725 bc327 equivalent bc32740 BC327 NPN transistor datasheet BC327/25 BC337-25 BC337-40
    Text: BC327-25 BC327-40 SMALL SIGNAL PNP TRANSISTORS PRELIMINARY DATA • ■ ■ Type Marking BC327-25 BC327-25 BC327-40 BC327-40 SILICON EPITAXIAL PLANAR PNP TRANSISTORS TO-92 PACKAGE SUITABLE FOR THROUGH-HOLE PCB ASSEMBLY THE NPN COMPLEMENTARY TYPES ARE BC337-25 AND BC337-40 RESPECTIVELY


    Original     		PDF BC327-25 BC327-40 BC337-25 BC337-40 bc327 BC327-25 BC327-40 BC32725 bc327 equivalent bc32740 BC327 NPN transistor datasheet BC327/25

    Untitled

    Abstract: No abstract text available
    Text: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer PNP/NPN SILICON PLANAR EPITAXIAL TRANSISTORS BC327, BC327A, BC328 PNP BC337, BC337A, BC338 (NPN) TO-92 EBC


    Original     		PDF BC327, BC327A, BC328 BC337, BC337A, BC338 C-120

    BC327 45V 800mA PNP Transistor

    Abstract: BC337 45V 800mA NPN Transistor transistor bc337 datasheet BC327 BC337 BC327 800mA PNP Transistor
    Text: SEMICONDUCTOR BC327 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B C FEATURES A ᴌHigh Current : IC=-800mA. ᴌDC Current Gain : hFE=100ᴕ630 VCE=-1V, Ic=-100mA . ᴌFor Complementary with NPN type BC337.


    Original     		PDF BC327 -800mA. -100mA) BC337. BC327 45V 800mA PNP Transistor BC337 45V 800mA NPN Transistor transistor bc337 datasheet BC327 BC337 BC327 800mA PNP Transistor

    BC337 45V 800mA NPN Transistor

    Abstract: BC327 45V 800mA PNP Transistor BC337 45V 800mA BC337 pnp transistor datasheet transistor bc337 datasheet BC327 BC337
    Text: SEMICONDUCTOR BC337 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B C FEATURES A ᴌHigh Current : IC=800mA. ᴌDC Current Gain : hFE=100ᴕ630 VCE=1V, Ic=100mA . ᴌFor Complementary with PNP type BC327.


    Original     		PDF BC337 800mA. 100mA) BC327. BC337 45V 800mA NPN Transistor BC327 45V 800mA PNP Transistor BC337 45V 800mA BC337 pnp transistor datasheet transistor bc337 datasheet BC327 BC337

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD BC327/328 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS  FEATURES * Suitable for AF-Driver stages and low power output stages * Complement to UTC BC337/338 1 TO-92  ORDERING INFORMATION Ordering Number


    Original     		PDF BC327/328 BC337/338 BC327L-xx-T92-B BC327G-xx-T92-B BC327L-xx-T92-K BC327G-xx-T92-K BC328L-xx-T92-B BC328G-xx-T92-B BC328L-xx-T92-K BC328G-xx-T92-K

    BC327

    Abstract: BC327 45V 800mA PNP Transistor f 630 TRANSISTOR BC327 45V 800mA NPN Transistor BC327 800mA PNP Transistor BC337 45V 800mA NPN Transistor bc327 45v 800mA pnp hFE-100 BC327 NPN transistor bc327 application note
    Text: SEMICONDUCTOR BC327 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES High Current : IC=-800mA. DC Current Gain : hFE=100 630 VCE=-1V, Ic=-100mA . For Complementary with NPN type BC337. MAXIMUM RATING (Ta=25


    Original     		PDF BC327 -800mA. -100mA) BC337. -100mA -500mA, -50mA -300mA -10mA, 100MHz BC327 BC327 45V 800mA PNP Transistor f 630 TRANSISTOR BC327 45V 800mA NPN Transistor BC327 800mA PNP Transistor BC337 45V 800mA NPN Transistor bc327 45v 800mA pnp hFE-100 BC327 NPN transistor bc327 application note

    transistor BC327

    Abstract: BC307 BC327 PNP transistor download datasheet 100C BC327 BC328 BC338
    Text: BC327/328 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS TO-92 • Suitable for AF-Driver stages and low power output stages • Complement to BC337/BC338 ABSOLUTE MAXIMUM RATINGS TA=25°°C Characteristic Symbol Collector-Emitter Voltage


    Original     		PDF BC327/328 BC337/BC338 BC327 BC328 transistor BC327 BC307 BC327 PNP transistor download datasheet 100C BC327 BC328 BC338

    BC337

    Abstract: BC337 45V 800mA NPN Transistor BC327 45V 800mA PNP Transistor BC327 45V 800mA NPN Transistor BC337 45V 800mA f 630 TRANSISTOR hFE-100 BC327
    Text: SEMICONDUCTOR BC337 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B C FEATURES A High Current : IC=800mA. DC Current Gain : hFE=100 630 VCE=1V, Ic=100mA . For Complementary with PNP type BC327. N E K G


    Original     		PDF BC337 800mA. 100mA) BC327. 00TTER 100mA 500mA, 300mA 100MHz BC337 BC337 45V 800mA NPN Transistor BC327 45V 800mA PNP Transistor BC327 45V 800mA NPN Transistor BC337 45V 800mA f 630 TRANSISTOR hFE-100 BC327

    c33725

    Abstract: c33740 C33740 NPN transistor transistor c33725 c33725 transistor BC337-40 C33740 transistor c33740 c33725 philips C33740 transistor C33740 NPN transistor datasheet
    Text: BC817; BC817W; BC337 45 V, 500 mA NPN general-purpose transistors Rev. 05 — 21 January 2005 Product data sheet 1. Product profile 1.1 General description NPN general-purpose transistors. Table 1: Product overview Type number Package PNP complement Philips


    Original     		PDF BC817; BC817W; BC337 BC817 BC807 BC817W OT323 SC-70 BC807W c33725 c33740 C33740 NPN transistor transistor c33725 c33725 transistor BC337-40 C33740 transistor c33740 c33725 philips C33740 transistor C33740 NPN transistor datasheet

    c33725 w 78

    Abstract: BC337 c33725 transistor transistor NPN c337 c33740 c33716 C33740 transistor C33725 C33725 W BC817
    Text: BC817; BC817W; BC337 45 V, 500 mA NPN general-purpose transistors Rev. 06 — 17 November 2009 Product data sheet 1. Product profile 1.1 General description NPN general-purpose transistors. Table 1. Product overview Type number Package PNP complement NXP JEITA


    Original     		PDF BC817; BC817W; BC337 BC817 BC807 BC817W OT323 SC-70 BC807W BC337 c33725 w 78 c33725 transistor transistor NPN c337 c33740 c33716 C33740 transistor C33725 C33725 W BC817

    c33725

    Abstract: c33740 transistor c33725 C33740 NPN transistor datasheet C33740 NPN transistor c33725 transistor transistor c33740 C33716 equivalent for c33725 C33740 transistor
    Text: BC817; BC817W; BC337 45 V, 500 mA NPN general-purpose transistors Rev. 06 — 17 November 2009 Product data sheet 1. Product profile 1.1 General description NPN general-purpose transistors. Table 1. Product overview Type number Package PNP complement NXP JEITA


    Original     		PDF BC817; BC817W; BC337 BC817 BC807 BC817W OT323 SC-70 BC807W BC337 c33725 c33740 transistor c33725 C33740 NPN transistor datasheet C33740 NPN transistor c33725 transistor transistor c33740 C33716 equivalent for c33725 C33740 transistor

    BC337

    Abstract: BC338 BC327 BC328 BC337 hfe PNP BC327
    Text: BC 337 BC 338 NPN SILICON AP MEDIUM POWER TRANSISTORS CASE TO-92F THE BC337 » BC338 ARE NPN SILICON PLANAR EPITAXIAL TRANSISTORS FOR USE IN AP DRIVER AND OUTPUT STAGES, AS WELL AS FOR UNIVERSAL APPLICATIONS. THE BC337, BC338 ARE COMPLEMENTARY TO THE PNP TYPE BC327,


    OCR Scan     		PDF BC337, BC338 BC327, BC328 O-92F BC337 625mW BC327 BC337 hfe PNP BC327

    BC327

    Abstract: BC337 BC327 W 75 BC327 transistor BC337 45V 800mA NPN Transistor
    Text: SEMICONDUCTOR TECHNICAL DATA BC327 EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • High Current : Ic=-800mA. • DC Current Gain : hFE=100~630 VCE=-1V, Ic=-100mA . • For Complementary with NPN type BC337.


    OCR Scan     		PDF BC327 -800mA. -100mA) BC337. BC327 BC337 BC327 W 75 BC327 transistor BC337 45V 800mA NPN Transistor

    BC327

    Abstract: BC328 BC337 BC338 BOX69477 BCJ28 NPN bc338
    Text: BC 327 • BC 328 J PNP SILICON AF MEDIUM POWER TRANSISTORS i CASI TO-92F THE BC327, BC328 ARE PNP SILICON PLANAR EPITAXIAL TRANSISTORS POR USE IN AP DRIVER AND OUTPUT STAGES, AS WELL AS FOR UNIVERSAL APPLICATIONS. THE BC327, BC328 ARE COM­ PLEMENTARY TO THE NPN TYPE BC337, BC338


    OCR Scan     		PDF BC327, BCJ28 BC328 BC337Â BC338 O-92F BC327 625mW BC337 BOX69477 NPN bc338

    Untitled

    Abstract: No abstract text available
    Text: BC 327 • BC 328 PNP SILICON AP MEDIUM POWER TRANSISTORS 1 CASE TO-92F THE BC327, BC328 ARE PNP SILICON PLANAR EPITAXIAL TRANSISTORS FOR USE IN AP DRIVER AND OUTPUT STAGES, AS WELL AS FOR UNIVERSAL APPLICATIONS. THE BC327, BC328 ARE COM­ PLEMENTARY TO THE NPN TYPE BC337, BC338


    OCR Scan     		PDF O-92F BC327, BC328 BC337, BC338 BC327 BC328 6251BW

    BC337 45V 800mA NPN Transistor

    Abstract: transistor bc327 BC327 BC337 bc337 45v 800mA
    Text: KOREA ELECTRONICS CO.,LTD. SEMICONDUCTOR TECHNICAL DATA BC337 EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • High Current : Ic=800mA. • DC Current Gain : hFE=100-400 VCE=1V, Ic=100mA . • For Complementary with PNP type BC327.


    OCR Scan     		PDF BC337 800mA. 100mA) BC327. BC337 45V 800mA NPN Transistor transistor bc327 BC327 BC337 bc337 45v 800mA

    Untitled

    Abstract: No abstract text available
    Text: B C 327 SEMICONDUCTOR " TECHNICAL DATA PNP EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS * Complement To Bc337 ABSOLUTE MAXIMUM RATINGS a t Tamb*25°C Symbol Rating C haracteristic Unit Collector-Emitter Voltage Vces -50 V Collector-Emitter Voltage


    OCR Scan     		PDF Bc337 -100uA -10mA 100mA -300mA -500mA -50mA -10mA

    TRANSISTOR pnp BC328

    Abstract: BC327 BC328 BC337 pnp transistor
    Text: BC327/328 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS • SUITABLE FOR AF-ORIVER STAGES AND LOW POWER OUTPUT STAGES •Complement to BC337/BC338 AB SO LU TE MAXIMUM RATINGS Ta = 25°C Characteristic Sym bol C ollector Em itter Voltage


    OCR Scan     		PDF BC327/328 BC337/BC338 BC327 BC328 -10mA, 00250S7 TRANSISTOR pnp BC328 BC327 BC328 BC337 pnp transistor

    BC337 45V 800mA NPN Transistor

    Abstract: BC327 BC337 NPN general purpose transistor BC337 BC337 pnp transistor
    Text: SEMICONDUCTOR TECHNICAL DATA BC337 EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • High Current : Ic=800mA. • DC Current Gain : hFE=100-630 VCe=1V, Ic=100mA . • For Complementary with PNP type BC327. MAXIMUM RATINGS (Ta=25°C)


    OCR Scan     		PDF BC337 800mA. 100mA) BC327. BC337 45V 800mA NPN Transistor BC327 BC337 NPN general purpose transistor BC337 BC337 pnp transistor

    BC327 45V 800mA PNP Transistor

    Abstract: BC327 BC337 OF TRANSISTOR BC337 BC337 NPN transistor
    Text: KOREA ELECTRONICS CO.,LTD. SEMICONDUCTOR TECHNICAL DATA BC327 EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • High Current : Ic=-800mA. • DC Current Gain : hFE=100-400 VCe=-1V, Ic=-100mA . • For Complementary with NPN type BC337.


    OCR Scan     		PDF BC327 -800mA. -100mA) BC337. BC327 45V 800mA PNP Transistor BC327 BC337 OF TRANSISTOR BC337 BC337 NPN transistor

    bc 327 complementary pair

    Abstract: BC327 BC328 BC337 BC338
    Text: BC 327 • BC 328 PNP SILICON AF MEDIUM POWER TRANSISTORS 1 CASE TO-92F THE BC327, BC328 ARE PNP SILICON PLANAR EPITAXIAL TRANSISTORS FOR USE IN AP DRIVER AND OUTPUT STA G E S , AS WELL AS FOR UNIVERSAL APPLICATIONS. THE BC327, BC328 ARE COM­ PLEMENTARY TO THE NPN TYPE BC337, BC338


    OCR Scan     		PDF BC327, BC328 BC337, BC338 O-92F BC327 625mW bc 327 complementary pair BC337

    BC337 pnp transistor

    Abstract: No abstract text available
    Text: PNP EPITAXIAL SILICON TRANSISTOR BC327/328 SWITCHING AND AMPLIFIER APPLICATIONS TO-92 • Suitable for AF-Driver stages and low power output stages • Complement to BC337/BC338 ABSOLUTE MAXIMUM RATINGS TA= 2 5 t C haracteristic Sym bol Collector-Em itter Voltage


    OCR Scan     		PDF BC327/328 BC337/BC338 SC327 BC328 BC327 BC337 pnp transistor