BC337-40
Abstract: BC337-25 BC33740 BC337-40 t d bc33725 bc337 BC327-40 BC337-40 TO92 BC327-25 BC337-25-AP
Text: BC337-25 BC337-40 SMALL SIGNAL NPN TRANSISTORS PRELIMINARY DATA Ordering Code Marking Package / Shipment BC337-25 BC337-25 TO-92 / Bulk BC337-25-AP BC337-25 TO-92 / Ammopack BC337-40 BC337-40 TO-92 / Bulk BC337-40-AP BC337-40 TO-92 / Ammopack SILICON EPITAXIAL PLANAR NPN
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BC337-25
BC337-40
BC337-25
BC337-25-AP
BC337-40
BC337-40-AP
BC33740
BC337-40 t d
bc33725
bc337
BC327-40
BC337-40 TO92
BC327-25
BC337-25-AP
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BC337 figure
Abstract: bc337 BC338-25 BC337-40 BC337-25 BC33825 BC33740 BC337-16 BC338 BC337 hfe
Text: ON Semiconductort BC337, BC337-16, BC337-25, BC337-40, BC338-25 Amplifier Transistors NPN Silicon MAXIMUM RATINGS Rating Symbol BC337 BC338 Unit Collector–Emitter Voltage VCEO 45 25 Vdc Collector–Base Voltage VCBO 50 30 Vdc Emitter–Base Voltage VEBO
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BC337,
BC337-16,
BC337-25,
BC337-40,
BC338-25
BC337
BC338
r14525
BC337/D
BC337 figure
bc337
BC338-25
BC337-40
BC337-25
BC33825
BC33740
BC337-16
BC338
BC337 hfe
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BC337
Abstract: BC338 BC337 MOTOROLA Motorola BC337
Text: MOTOROLA Order this document by BC337/D SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors NPN Silicon BC337,-16,-25,-40 BC338,-16,-25,-40 COLLECTOR 1 2 BASE 3 EMITTER 1 MAXIMUM RATINGS 2 Rating Symbol BC337 BC338 Unit Collector – Emitter Voltage VCEO 45
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BC337/D
BC337
BC338
BC337
BC338
BC337/D*
BC337 MOTOROLA
Motorola BC337
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by BC337/D SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors NPN Silicon BC337,-16,-25,-40 BC338,-16,-25,-40 COLLECTOR 1 2 BASE 3 EMITTER 1 MAXIMUM RATINGS 2 Rating Symbol BC337 BC338 Unit Collector – Emitter Voltage VCEO 45
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BC337/D
BC337
BC338
BC337
BC338
BC337/D*
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BC337 figure
Abstract: BC337 BC337 NPN transistor datasheet BC338
Text: MOTOROLA Order this document by BC337/D SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors NPN Silicon BC337,-16,-25,-40 BC338,-16,-25,-40 COLLECTOR 1 2 BASE 3 EMITTER 1 MAXIMUM RATINGS 2 Rating Symbol BC337 BC338 Unit Collector – Emitter Voltage VCEO 45
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BC337/D
BC337
BC338
BC337
BC338
BC337/D*
BC337 figure
BC337 NPN transistor datasheet
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bc337 pin out diagram
Abstract: BC337G BC33 BC337-25 BC337-40 BC33740 BC337-025G bc337 BC337 figure BC337 NPN transistor datasheet
Text: BC337, BC337-25, BC337-40 Amplifier Transistors NPN Silicon http://onsemi.com Features • These are Pb−Free Devices COLLECTOR 1 2 BASE MAXIMUM RATINGS Rating Symbol Value Unit Collector − Emitter Voltage VCEO 45 Vdc Collector − Base Voltage VCBO 50
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BC337,
BC337-25,
BC337-40
BC337/D
bc337 pin out diagram
BC337G
BC33
BC337-25
BC337-40
BC33740
BC337-025G
bc337
BC337 figure
BC337 NPN transistor datasheet
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BC337A
Abstract: No abstract text available
Text: BC337, BC337-25, BC337-40 Amplifier Transistors NPN Silicon http://onsemi.com Features • These are Pb−Free Devices COLLECTOR 1 2 BASE MAXIMUM RATINGS Rating Symbol Value Unit Collector − Emitter Voltage VCEO 45 Vdc Collector − Base Voltage VCBO 50
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BC337,
BC337-25,
BC337-40
BC337/D
BC337A
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bc337a
Abstract: No abstract text available
Text: BC337, BC337-25, BC337-40 Amplifier Transistors NPN Silicon http://onsemi.com Features • These are Pb−Free Devices COLLECTOR 1 2 BASE MAXIMUM RATINGS Rating Symbol Value Unit Collector − Emitter Voltage VCEO 45 Vdc Collector − Base Voltage VCBO 50
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BC337,
BC337-25,
BC337-40
BC337/D
bc337a
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transistor bc237 bc337
Abstract: replacement transistor BC337 bc337 TRANSISTOR equivalent bc338 equivalent BC337 TO-92 Generic BC337 circuit example BC160-16 BC337-25 "pin compatible" BC237 BC338 REPLACEMENT
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors NPN Silicon BC337,-16,-25,-40 BC338,-16,-25,-40 COLLECTOR 1 2 BASE 3 EMITTER 1 MAXIMUM RATINGS 2 Rating Symbol BC337 BC338 Unit Collector – Emitter Voltage VCEO 45 25 Vdc Collector – Base Voltage
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BC337
BC338
226AA)
Junction218A
MSC1621T1
MSC2404
MSD1819A
MV1620
transistor bc237 bc337
replacement transistor BC337
bc337 TRANSISTOR equivalent
bc338 equivalent
BC337 TO-92 Generic
BC337 circuit example
BC160-16
BC337-25 "pin compatible"
BC237
BC338 REPLACEMENT
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BC337
Abstract: BC338 BC337 figure
Text: ON Semiconductort Amplifier Transistors BC337,-16,-25,-40 BC338,-16,-25,-40 NPN Silicon MAXIMUM RATINGS Rating Symbol BC337 BC338 Unit Collector–Emitter Voltage VCEO 45 25 Vdc Collector–Base Voltage VCBO 50 30 Vdc Emitter–Base Voltage VEBO 5.0 Vdc Collector Current — Continuous
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BC337
BC338
BC337
BC338
r14525
BC337/D
BC337 figure
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bc337
Abstract: NPN transistor 500ma TO-92 Transistor A12 BC337-16 BC-337-16 bc338-40 BC337 NPN transistor TRANSISTOR BC337-25 transistor bc33740 BC338
Text: BC337-16/25/40，BC338-16/25/40 NPN Transistor Preliminary Small Signal Diode TO-92 A Features Epitaxial planar die construction B Surface device type mounting E Moisture sensitivity level 1 G Matte Tin Sn lead finish with Nickel(Ni) underplate
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BC337-16/25/40BC338-16/25/40
MIL-STD-202,
19gram
C/10s
BC337-16
Group16
BC337
BC338
NPN transistor 500ma TO-92
Transistor A12
BC-337-16
bc338-40
BC337 NPN transistor
TRANSISTOR BC337-25
transistor bc33740
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BC33x
Abstract: No abstract text available
Text: BC337…BC338-16/25/40 NPN Transistor TO-92 Small Signal Product Features ◇For switching and AF amplifier applications ◇These types are subdivided into three groups -16, -25 and -40, according to their DC current gain ◇Moisture sensitivity level 1 ◇Driver transistor
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BC337â
BC338-16/25/40
MIL-STD-202,
BC337-16/25/40
BC33x
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Untitled
Abstract: No abstract text available
Text: BC337… BC338 NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low-power output stages. These types are also available subdivided into three groups -16, -25 and -40,according to their DC
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BC337â
BC338
BC327
BC328
BC337
500mA,
300mA
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BC337 pnp transistor
Abstract: BC337 OF TRANSISTOR BC338 BC337 leads bc338 complementary OF TRANSISTOR BC337 BC327 BC328 BC338 BC337 hfe
Text: ST BC337… BC338 NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low-power output stages. These types are also available subdivided into three groups -16, -25 and -40,according to their DC
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BC337.
BC338
BC327
BC328
BC337
500mA,
300mA
BC337 pnp transistor
BC337
OF TRANSISTOR BC338
BC337 leads
bc338 complementary
OF TRANSISTOR BC337
BC338
BC337 hfe
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BC337 pnp transistor
Abstract: st bc337 BC337 BC337 hfe OF TRANSISTOR BC338 BC337 leads bc338 complementary OF TRANSISTOR BC337 BC327 BC328
Text: ST BC337… BC338 NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low-power output stages. These types are also available subdivided into three groups -16, -25 and -40,according to their DC
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BC337.
BC338
BC327
BC328
BC337
500mA,
300mA
BC337 pnp transistor
st bc337
BC337
BC337 hfe
OF TRANSISTOR BC338
BC337 leads
bc338 complementary
OF TRANSISTOR BC337
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BC337 pnp transistor
Abstract: BC337 BC337 hfe OF TRANSISTOR BC337 OF TRANSISTOR BC338 BC337 leads bc338 complementary pin configuration Bc327 BC327 BC328
Text: ST BC337… BC338 NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low-power output stages. These types are also available subdivided into three groups -16, -25 and -40,according to their DC
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BC337.
BC338
BC327
BC328
BC337
500mA,
300mA
BC337 pnp transistor
BC337
BC337 hfe
OF TRANSISTOR BC337
OF TRANSISTOR BC338
BC337 leads
bc338 complementary
pin configuration Bc327
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BC337 B 011
Abstract: No abstract text available
Text: MCC TM Micro Commercial Components BC337-16/25/40 BC338-16/25/40 omponents 20736 Marilla Street Chatsworth !"# $ % !"# Features x x x • • • NPN Plastic-Encapsulate Transistors Capable of 0.625Watts of Power Dissipation.
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BC337-16/25/40
BC338-16/25/40
625Watts
BC337)
BC338)
10mAdc,
BC337
BC338
BC337 B 011
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bc337 b 011
Abstract: No abstract text available
Text: MCC TM Micro Commercial Components Features x x x • • • BC337-16/25/40 BC338-16/25/40 omponents 20736 Marilla Street Chatsworth !"# $ % !"# Capable of 0.625Watts of Power Dissipation. Collector-current 0.8A
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BC337-16/25/40
BC338-16/25/40
625Watts
BC337)
BC338)
10mAdc,
BC337
BC338
bc337 b 011
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MARKING code 25
Abstract: BC337 B 011
Text: MCC TM Micro Commercial Components BC337-16/25/40 BC338-16/25/40 omponents 20736 Marilla Street Chatsworth !"# $ % !"# Features • x x x • • • NPN Plastic-Encapsulate Transistors Halogen free available upon request by adding suffix "-HF"
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BC337-16/25/40
BC338-16/25/40
625Watts
BC337)
BC338)
10mAdc,
BC337
BC338
MARKING code 25
BC337 B 011
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BC337 B 011
Abstract: No abstract text available
Text: MCC TM Micro Commercial Components BC337-16/25/40 BC338-16/25/40 omponents 20736 Marilla Street Chatsworth !"# $ % !"# Features • x x x • • • NPN Plastic-Encapsulate Transistors Halogen free available upon request by adding suffix "-HF"
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BC337-16/25/40
BC338-16/25/40
625Watts
BC337)
BC338)
BC337 B 011
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CBC337
Abstract: BC337 BC337 figure MOTOROLA bc338-40 BC337 MOTOROLA NPN bc338 BC338 bc337-40 le
Text: MOTOROLA Order this document by BC337/D SEMICONDUCTOR TECHNICAL DATA A m plifier Transistors NPN Silicon BC337,- 16,-25,-40 BC338,- 16,-25,-40 COLLECTOR 1 EMITTER MAXIMUM RATINGS Rating Symbol BC337 BC338 Unit C o lle c to r-E m itte r Voltage VCEO 45 25 Vdc
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BC337/D
BC337
BC338
O-226AA)
CBC337
BC337 figure
MOTOROLA bc338-40
BC337 MOTOROLA
NPN bc338
bc337-40 le
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BC337 ITT
Abstract: 8C338 BC337 BC337 leads pin configuration Bc337 bc338 complementary pin configuration Bc338
Text: BC337, BC338 NPN Silicon Epitaxial Planar Transistors for switching and amplifier applications. Especially suit able for AF-driver stages and low power output stages. These types are also available subdivided into three groups -16, -25, and -40, according to their DC current
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BC337,
BC338
BC327
BC328
62pulse
BC337 ITT
8C338
BC337
BC337 leads
pin configuration Bc337
bc338 complementary
pin configuration Bc338
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BC337
Abstract: 337j AS 337 bc338 complementary NPN 337 BC337 leads transistor bc 102 BC327 BC328 BC338
Text: BC337, BC338 NPN Silicon Epitaxial Planar Transistors for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. 1 _ i These types are also available subdivided into three groups -16, -25 and -40, according to their DC current gain. As comple
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BC338
BC327
BC328
BC337
BC338
103mA
337j
AS 337
bc338 complementary
NPN 337
BC337 leads
transistor bc 102
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bc337
Abstract: bc338 TRANSISTOR bc337 40 TRANSISTOR BC338 BC338 TRANSISTOR TRANSISTOR BC337-40 BC33840
Text: MCC TO-92 Plastic-Encapsulate Transistors ^ BC337 BC338 ,-16,-25,-40 TRANSISTOR(NPN) FEATURES Pcm: 0.625W (Tamb=25°C) Icm: 0 .8 A ÍIIÍÍÉ>ji^fe>ba»a voltage Vcbo: BC 337 : 50V B C 338 : 30V storage junction temperature range Tj,Tstg: -55'C to + 150°C
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BC337
BC338)
BC338
TRANSISTOR bc337 40
TRANSISTOR BC338
BC338 TRANSISTOR
TRANSISTOR BC337-40
BC33840
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