bc639
Abstract: 2bc639 fairchild date code transistor BC637 complement applications of Transistor BC639 bc639 fairchild
Text: BC635/637/639 BC635/637/639 Switching and Amplifier Applications • Complement to BC636/638/640 TO-92 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCER VCES VCEO Parameter
|
Original
|
PDF
|
BC635/637/639
BC636/638/640
BC635
BC637
BC639
2bc639
fairchild date code
transistor BC637 complement
applications of Transistor BC639
bc639 fairchild
|
Untitled
Abstract: No abstract text available
Text: BC635/637/639 BC635/637/639 Switching and Amplifier Applications • Complement to BC636/638/640 TO-92 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCER VCES VCEO Parameter
|
Original
|
PDF
|
BC635/637/639
BC636/638/640
BC635
BC637
BC639
|
bc736
Abstract: BC635 BC637 BC639
Text: BC635/637/639 BC635/637/639 Switching and Amplifier Applications • Complement to BC636/638/640 TO-92 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCER VCES VCEO Parameter
|
Original
|
PDF
|
BC635/637/639
BC636/638/640
BC635
BC637
BC639
bc736
BC635
BC637
BC639
|
BC639G
Abstract: BC639 BC639RL1G BC639ZL1G BC63 BC637 BC637G BC639 application note BC639-16ZLT1
Text: BC637, BC639, BC639−16 High Current Transistors NPN Silicon Features • These are Pb−Free Devices* http://onsemi.com COLLECTOR 2 MAXIMUM RATINGS Rating Symbol Collector - Emitter Voltage Value VCEO BC637 BC639 Collector - Base Voltage Vdc 60 80 1 EMITTER
|
Original
|
PDF
|
BC637,
BC639,
BC639-16
BC637
BC639
BC637/D
BC639G
BC639
BC639RL1G
BC639ZL1G
BC63
BC637
BC637G
BC639 application note
BC639-16ZLT1
|
BC639 pin details
Abstract: BC639 application note BC639G BC639 BC639 18 transistor BC639 BC635 BC635RL1 BC63916 BC635ZL1
Text: BC635, BC637, BC639, BC639−16 High Current Transistors NPN Silicon http://onsemi.com Features • Pb−Free Packages are Available* COLLECTOR 2 3 BASE MAXIMUM RATINGS Rating Symbol Collector - Emitter Voltage Value Unit VCEO BC635 BC637 BC639 Collector - Base Voltage
|
Original
|
PDF
|
BC635,
BC637,
BC639,
BC639-16
BC635
BC637
BC639
BC639 pin details
BC639 application note
BC639G
BC639
BC639 18
transistor BC639
BC635
BC635RL1
BC63916
BC635ZL1
|
BC639
Abstract: BC639 18 BC635 BC635RL1 BC635ZL1 BC637 BC639-16 BC639RL1 BC639ZL1 bc637 050
Text: BC635, BC637, BC639, BC639-16 High Current Transistors NPN Silicon http://onsemi.com COLLECTOR 2 MAXIMUM RATINGS Rating Symbol Collector-Emitter Voltage Value Unit VCEO BC635 BC637 BC639 Collector-Base Voltage 45 60 80 1 EMITTER VCBO BC635 BC637 BC639 Emitter-Base Voltage
|
Original
|
PDF
|
BC635,
BC637,
BC639,
BC639-16
BC635
BC637
BC639
BC639
BC639 18
BC635
BC635RL1
BC635ZL1
BC637
BC639-16
BC639RL1
BC639ZL1
bc637 050
|
BC639 pin details
Abstract: BC639 18 BC635 BC635RL1 BC635ZL1 BC637 BC639 BC639RL1 BC639ZL1
Text: BC635, BC637, BC639, BC639−16 High Current Transistors NPN Silicon Features http://onsemi.com • Pb−Free Package is Available* COLLECTOR 2 3 BASE MAXIMUM RATINGS Rating Symbol Collector-Emitter Voltage Value VCEO BC635 BC637 BC639 Collector-Base Voltage
|
Original
|
PDF
|
BC635,
BC637,
BC639,
BC639-16
BC635
BC637
BC639
BC639 pin details
BC639 18
BC635
BC635RL1
BC635ZL1
BC637
BC639
BC639RL1
BC639ZL1
|
BC639
Abstract: BC639-16 BC639G BC63 BC639 pin details BC637G BC639RL1G BC637 BC637RL1G bc637 050
Text: BC637, BC639, BC639-16 High Current Transistors NPN Silicon Features • These are Pb−Free Devices* http://onsemi.com COLLECTOR 2 MAXIMUM RATINGS Rating Collector - Emitter Voltage Collector - Base Voltage Symbol BC637 BC639 BC637 BC639 Emitter - Base Voltage
|
Original
|
PDF
|
BC637,
BC639,
BC639-16
BC637
BC639
BC637/D
BC639
BC639-16
BC639G
BC63
BC639 pin details
BC637G
BC639RL1G
BC637
BC637RL1G
bc637 050
|
bc736
Abstract: bc635 BC637 BC639
Text: BC635/637/639 BC635/637/639 Switching and Amplifier Applications • Complement to BC636/638/640 TO-92 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCER VCES VCEO Parameter
|
Original
|
PDF
|
BC635/637/639
BC636/638/640
BC635
BC637
BC639
bc736
bc635
BC637
BC639
|
BC635
Abstract: bc639 BC637
Text: BC635/637/639 BC635/637/639 Switching and Amplifier Applications • Complement to BC636/638/640 TO-92 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCER VCES VCEO Parameter
|
Original
|
PDF
|
BC635/637/639
BC636/638/640
BC635
BC637
BC639
BC635
bc639
BC637
|
transistor C 639 W
Abstract: No abstract text available
Text: BC635/637/639 BC635/637/639 Switching and Amplifier Applications • Complement to BC636/638/640 TO-92 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCER VCES VCEO Parameter
|
Original
|
PDF
|
BC635/637/639
BC636/638/640
BC635
BC637
BC639
transistor C 639 W
|
Untitled
Abstract: No abstract text available
Text: BC637, BC639, BC639-16 High Current Transistors NPN Silicon Features • These are Pb−Free Devices* http://onsemi.com COLLECTOR 2 MAXIMUM RATINGS Symbol Rating Collector - Emitter Voltage BC637 BC639 Collector - Base Voltage BC637 BC639 Emitter - Base Voltage
|
Original
|
PDF
|
BC637,
BC639,
BC639-16
BC637
BC639
BC637/D
|
NPN transistor ECB TO-92
Abstract: Bc637 BC635 ECB transistor C 639 W transistor BC637 complement
Text: BC635/637/639 BC635/637/639 Switching and Amplifier Applications • Complement to BC636/638/640 TO-92 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCER VCES VCEO Parameter
|
Original
|
PDF
|
BC635/637/639
BC636/638/640
BC635
BC637
BC639
NPN transistor ECB TO-92
Bc637
BC635 ECB
transistor C 639 W
transistor BC637 complement
|
BC639RL1
Abstract: BC639ZL1 BC635 BC635RL1 BC635ZL1 BC637 BC639
Text: BC635, BC637, BC639 High Current Transistors NPN Silicon MAXIMUM RATINGS http://onsemi.com Rating Symbol BC635 BC637 BC639 Unit Collector – Emitter Voltage VCEO 45 60 80 Vdc Collector – Base Voltage VCBO 45 60 80 Vdc Emitter – Base Voltage VEBO 5.0 COLLECTOR
|
Original
|
PDF
|
BC635,
BC637,
BC639
BC635
BC637
r14153
BC635/D
BC639RL1
BC639ZL1
BC635
BC635RL1
BC635ZL1
BC637
BC639
|
|
BC639 MOTOROLA
Abstract: transistors BC 293 BC635 BC637 BC639 BC635 MOTOROLA
Text: MOTOROLA Order this document by BC635/D SEMICONDUCTOR TECHNICAL DATA High Current Transistors BC635 BC637 BC639 NPN Silicon COLLECTOR 2 3 BASE 1 EMITTER 1 MAXIMUM RATINGS 2 Symbol BC 635 BC 637 BC 639 Unit Collector – Emitter Voltage VCEO 45 60 80 Vdc Collector – Base Voltage
|
Original
|
PDF
|
BC635/D
BC635
BC637
BC639
BC635/D*
BC639 MOTOROLA
transistors BC 293
BC635
BC637
BC639
BC635 MOTOROLA
|
bc635
Abstract: transistor C 639 W
Text: BC635/637/639 BC635/637/639 Switching and Amplifier Applications • Complement to BC636/638/640 TO-92 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCER VCES VCEO Parameter
|
Original
|
PDF
|
BC635/637/639
BC636/638/640
BC635
BC637
BC639
bc635
transistor C 639 W
|
transistor bC640 OF CDIL
Abstract: BC639 bc639 npn BC635 TRANSISTOR E C B BC635 BC636 BC637 BC638 BC640 NPN, PNP for 500ma, 30v
Text: Continental Device India Limited IS/ISO 9002 Lic# QSC/L-000019.3 An IS/ISO 9002 and IECQ Certified Manufacturer SILICON PLANAR EPITAXIAL TRANSISTORS BC635 BC637 BC639 NPN BC636 BC638 BC640 PNP TO-92 Plastic Package E CB Driver Stages of Audio Amplifiers Applications
|
Original
|
PDF
|
QSC/L-000019
BC635
BC637
BC639
BC636
BC638
BC640
BC636,
BC638,
transistor bC640 OF CDIL
BC639
bc639 npn
BC635 TRANSISTOR E C B
BC635
BC636
BC637
BC638
BC640
NPN, PNP for 500ma, 30v
|
BC635 TRANSISTOR E C B
Abstract: BC635 BC635-10 BC636 BC637 BC637-10 BC638 BC639 BC640 BC635 application note
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BC635; BC637; BC639 NPN medium power transistors Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Mar 12 Philips Semiconductors Product specification
|
Original
|
PDF
|
M3D186
BC635;
BC637;
BC639
BC636,
BC638
BC640.
BC635 TRANSISTOR E C B
BC635
BC635-10
BC636
BC637
BC637-10
BC639
BC640
BC635 application note
|
BC639
Abstract: BC635 BC635RL1 BC635ZL1 BC637 BC639RL1 BC639ZL1
Text: BC635, BC637, BC639 High Current Transistors NPN Silicon MAXIMUM RATINGS http://onsemi.com Rating Symbol BC635 BC637 BC639 Unit Collector – Emitter Voltage VCEO 45 60 80 Vdc Collector – Base Voltage VCBO 45 60 80 Vdc Emitter – Base Voltage VEBO 5.0 COLLECTOR
|
Original
|
PDF
|
BC635,
BC637,
BC639
BC635
BC637
r14153
BC635/D
BC639
BC635
BC635RL1
BC635ZL1
BC637
BC639RL1
BC639ZL1
|
BC640
Abstract: BC635 BC635-16 BC636 BC637 BC637-16 BC638 BC639 BC639-10 BC639-16
Text: DISCRETE SEMICONDUCTORS DATA SHEET Product specification Supersedes data of 1997 Mar 12 1999 Apr 23 Philips Semiconductors Product specification NPN medium power transistors BC635; BC637; BC639 FEATURES PINNING • High current max. 1 A PIN • Low voltage (max. 80 V).
|
Original
|
PDF
|
BC635;
BC637;
BC639
BC636,
BC638
BC640.
MAM259
SCA63
115002/00/03/pp8
BC640
BC635
BC635-16
BC636
BC637
BC637-16
BC639
BC639-10
BC639-16
|
BC637
Abstract: BC639 BC635 BC635-16 BC636 BC637-16 BC638 BC639-10 BC640 bc639 philips
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BC635; BC637; BC639 NPN medium power transistors Product specification Supersedes data of 1997 Mar 12 1999 Apr 23 Philips Semiconductors Product specification NPN medium power transistors BC635; BC637; BC639
|
Original
|
PDF
|
M3D186
BC635;
BC637;
BC639
BC636,
BC638
BC640.
BC637
BC639
BC635
BC635-16
BC636
BC637-16
BC639-10
BC640
bc639 philips
|
Untitled
Abstract: No abstract text available
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON PLANAR EPITAXIAL TRANSISTORS BC635, 637, 639 NPN BC636, 638, 640 PNP TO-92 Plastic Package For Lead Free Parts, Device Part # will be Prefixed with "T" E CB
|
Original
|
PDF
|
BC635,
BC636,
640Rev
030106E
C-120
|
Untitled
Abstract: No abstract text available
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON PLANAR EPITAXIAL TRANSISTORS BC635, 637, 639 NPN BC636, 638, 640 PNP TO-92 Plastic Package For Lead Free Parts, Device Part # will be Prefixed with "T" E CB
|
Original
|
PDF
|
BC635,
BC636,
640Rev
180712E
C-120
|
63516
Abstract: 635-16 63916 Bc 649
Text: DISCRETE SEMICONDUCTORS Product specification Supersedes data of 1997 Mar 12 Philips Sem iconductors 1999 Apr 23 PHILIPS Philips Semiconductors Product specification NPN medium power transistors BC635; BC637; BC639 FEATURES PINNING • High current max. 1 A
|
OCR Scan
|
PDF
|
BC635;
BC637;
BC639
BC636,
BC640.
BC635
115002/00/03/pp8
63516
635-16
63916
Bc 649
|