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    BC850 TRANSISTOR Search Results

    BC850 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    BC850 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BC847-BC850

    Abstract: No abstract text available
    Text: BC846 . BC850 BC846 . BC850 Surface Mount General Purpose Si-Epi-Planar Transistors Si-Epi-Planar Universaltransistoren für die Oberflächenmontage NPN NPN Version 2012-01-02 Power dissipation – Verlustleistung 1.1 2.9 ±0.1 0.4 Plastic case Kunststoffgehäuse


    Original     		PDF BC846 BC850 BC850 OT-23 O-236) UL94V-0 BC846 BC847 BC847-BC850

    BC849

    Abstract: BC849B BC849C BC850 BC850B BC850C BC859 BC860
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BC849; BC850 NPN general purpose transistors Product specification Supersedes data of 1998 Aug 06 1999 Apr 08 Philips Semiconductors Product specification NPN general purpose transistors BC849; BC850


    Original     		PDF M3D088 BC849; BC850 BC859 BC860. BC849B BC850B SCA63 BC849 BC849B BC849C BC850 BC850B BC850C BC860

    bc849

    Abstract: bc850c
    Text: DISCRETE SEMICONDUCTORS DAT BC849; BC850 NPN general purpose transistors Product data sheet Supersedes data of 1999 Apr 08 2004 Jan 16 NXP Semiconductors Product data sheet NPN general purpose transistors BC849; BC850 FEATURES PINNING • Low current max. 100 mA


    Original     		PDF BC849; BC850 BC859 BC860. BC849B BC850B BC849C BC850C bc849 bc850c

    BC849

    Abstract: BC849B BC849C BC850 BC850B BC850C
    Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company SOT-23 Formed SMD Package BC849 BC850 SILICON PLANAR EPITAXIAL TRANSISTORS N–P–N transistors Marking BC849 = 2D BC849B = 2B BC849C = 2C BC850 = 2H BC850B = 2F 8C850C = 2G PACKAGE OUTLINE DETAILS


    Original     		PDF ISO/TS16949 OT-23 BC849 BC850 BC849B BC849C BC850B 8C850C BC849 BC849B BC849C BC850 BC850B BC850C

    Transistors

    Abstract: BC849 BC850 BC850C BC849 BC849B BC849C BC850 BC850B BC859 BC860
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BC849; BC850 NPN general purpose transistors Product specification Supersedes data of 1999 Apr 08 2004 Jan 16 Philips Semiconductors Product specification NPN general purpose transistors BC849; BC850 FEATURES PINNING • Low current max. 100 mA


    Original     		PDF BC849; BC850 BC859 BC860. BC849B BC850B BC849C BC850C Transistors BC849 BC850 BC850C BC849 BC849B BC849C BC850 BC850B BC860

    BC847B-1F

    Abstract: transistor 1f sot-23 MARKING 1F transistor marking 1f BC856 BC846 BC846A BC846B BC847 BC848
    Text: BC846 . BC850 BC846 . BC850 Surface Mount General Purpose Si-Epi-Planar Transistors Si-Epi-Planar Universaltransistoren für die Oberflächenmontage NPN NPN Version 2008-04-15 Power dissipation – Verlustleistung 1.1 2.9 ±0.1 0.4 Plastic case Kunststoffgehäuse


    Original     		PDF BC846 BC850 OT-23 O-236) UL94V-0 BC847 BC847B-1F transistor 1f sot-23 MARKING 1F transistor marking 1f BC856 BC846 BC846A BC846B BC847 BC848

    BC849

    Abstract: 2f bc850 2F P marking BC849B BC849C BC850 BC850B BC850C NPN sot23 mark NF
    Text: SEMICONDUCTOR BC849/850 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION . FEATURES E B L L BC849 Collector-Emitter Voltage BC850 Emitter-Base Voltage VCEO 30 UNIT P V 50 30 V 45 P J BC850 VCBO 1 VEBO 5 V IC


    Original     		PDF BC849/850 BC849 BC850 BC849B BC849C BC850B BC849 2f bc850 2F P marking BC849B BC849C BC850 BC850B BC850C NPN sot23 mark NF

    Untitled

    Abstract: No abstract text available
    Text: BC846 . BC850 BC846 . BC850 Surface Mount General Purpose Si-Epi-Planar Transistors Si-Epi-Planar Universaltransistoren für die Oberflächenmontage NPN NPN Version 2011-07-07 Power dissipation – Verlustleistung 1.1 2.9 ±0.1 0.4 Plastic case Kunststoffgehäuse


    Original     		PDF BC846 BC850 OT-23 O-236) UL94V-0 BC847

    BC850

    Abstract: BC856 BC859 BC846 BC846A BC847 BC848 BC849
    Text: BC846 . BC850 BC846 . BC850 Surface Mount General Purpose Si-Epi-Planar Transistors Si-Epi-Planar Universaltransistoren für die Oberflächenmontage NPN NPN Version 2006-06-02 Power dissipation – Verlustleistung 1.1 2.9 ±0.1 0.4 Plastic case Kunststoffgehäuse


    Original     		PDF BC846 BC850 OT-23 O-236) UL94V-0 BC847 BC850 BC856 BC859 BC846 BC846A BC847 BC848 BC849

    BC849

    Abstract: 2f bc850 BC849B BC849C BC850 BC850B BC850C
    Text: SEMICONDUCTOR BC849/850 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION . FEATURES E B L L D For Complementary With PNP Type BC859/860. BC850 BC849 Collector-Emitter Voltage BC850 Emitter-Base Voltage 30 VCBO


    Original     		PDF BC849/850 BC859/860. BC850 BC849 00MHz BC849B BC849 2f bc850 BC849B BC849C BC850 BC850B BC850C

    BC848CMTF

    Abstract: BC848AMTF BC847CMTF BC850 sot-23 body marking A 4 BC847AMTF BC846 BC849 BC856 BC860
    Text: BC846- BC850 tm NPN Epitaxial Silicon Transistor Features • Switching and Amplifier Applications • Suitable for automatic insertion in thick and thin-film circuits 3 • Low Noise: BC849, BC850 • Complement to BC856 . BC860 2 1 SOT-23 1. Base 2. Emitter 3. Collector


    Original     		PDF BC846- BC850 BC849, BC856 BC860 OT-23 BC846 BC847/850 BC848/849 BC848CMTF BC848AMTF BC847CMTF BC850 sot-23 body marking A 4 BC847AMTF BC846 BC849 BC856 BC860

    MARKING 720 SOT23

    Abstract: TRANSISTOR 8BB SOT-23 8BB fairchild sot-23 Device Marking pc sot-23 body marking 720 TRANSISTOR bc846 720 SOT23 sot-23 body marking 02 BC846 -BC850 SOT23 transistor MARKING my
    Text: BC846- BC850 tm NPN Epitaxial Silicon Transistor Features • Switching and Amplifier Applications • Suitable for automatic insertion in thick and thin-film circuits 3 • Low Noise: BC849, BC850 • Complement to BC856 . BC860 2 1 SOT-23 1. Base 2. Emitter 3. Collector


    Original     		PDF BC846- BC850 BC850 BC849, BC856 BC860 OT-23 BC846 MARKING 720 SOT23 TRANSISTOR 8BB SOT-23 8BB fairchild sot-23 Device Marking pc sot-23 body marking 720 TRANSISTOR bc846 720 SOT23 sot-23 body marking 02 BC846 -BC850 SOT23 transistor MARKING my

    sot-23 Marking B1

    Abstract: BC850 fairchild sot-23 Device Marking pc b1 marking sot-23 720 SOT23 BC846 BC849 BC856 BC860 MARKING 720 SOT23
    Text: BC846 - BC850 NPN Epitaxial Silicon Transistor Features 3 • Switching and Amplifier Applications • Suitable for automatic insertion in thick and thin-film circuits • Low Noise: BC849, BC850 • Complement to BC856 . BC860 2 1 SOT-23 1. Base 2. Emitter 3. Collector


    Original     		PDF BC846 BC850 BC849, BC856 BC860 OT-23 BC846 BC847/850 BC848/849 sot-23 Marking B1 BC850 fairchild sot-23 Device Marking pc b1 marking sot-23 720 SOT23 BC849 BC856 BC860 MARKING 720 SOT23

    BC850C

    Abstract: 2F PNP SOT23 BC849C 2G BC850C NXP BC849B BC849 BC849B BC850 BC850B BC859
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BC849; BC850 NPN general purpose transistors Product data sheet Supersedes data of 1999 Apr 08 2004 Jan 16 NXP Semiconductors Product data sheet NPN general purpose transistors BC849; BC850 FEATURES PINNING • Low current max. 100 mA


    Original     		PDF BC849; BC850 BC859 BC860. BC849B BC850B BC849C BC850C BC850C 2F PNP SOT23 BC849C 2G BC850C NXP BC849B BC849 BC849B BC850 BC850B

    Untitled

    Abstract: No abstract text available
    Text: BC846 - BC850 NPN Epitaxial Silicon Transistor Features 3 • • • Switching and Amplifier Applications Suitable for automatic insertion in thick and thin-film circuits Low Noise: BC849, BC850 • Complement to BC856 . BC860 2 1 SOT-23 1. Base 2. Emitter 3. Collector


    Original     		PDF BC846 BC850 BC849, BC856 BC860 OT-23 BC846 BC847/850 BC848/849

    Untitled

    Abstract: No abstract text available
    Text: _ BC849 BC850 / SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in a plastic SOT-23 package. QUICK REFERENCE D A T A BC849 Collector-em itter voltage VgE = 0 Collector-em itter voltage (open base) BC850 V CES max.


    OCR Scan     		PDF BC849 BC850 OT-23 BC849B BC850B BC849C BC850C

    BC850

    Abstract: BC850B BCS49 BC849 BC849B BC849C BC850C 8C850
    Text: BC849 BC850 SILICON PLANAR EPITAXIAL TRANSISTORS N -P-N transistors Marking BC849 = 2D BC849B = 2B BC849C = 2C BC850 = 2H BC850B = 2F 8C850C = 2G Pin configuration PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm J5.0 2.8 0.14 0.48 0.38 2.6 2.4 1 = BASE 2 = EMITTER


    OCR Scan     		PDF BC849 BC850 BC849B BC849C BC850B 8C850C BC849 BC850 BC850B BCS49 BC849B BC849C BC850C 8C850

    BCS49C

    Abstract: No abstract text available
    Text: BC849 BC850 SILICON PLANAR EPITAXIAL TRANSISTORS N -P -N transistors M arking BC849 * 2D BC849B = 2B BCS49C = 2C BC850 = 2H BC850B = 2F 8C850C = 2G PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm _3.0 2.8 0.14 0.48 •538 ! 3 2.6 Pin configuration 2.4 1 = BASE


    OCR Scan     		PDF BC849 BC850 BC849 BC849B BCS49C BC850B 8C850C BC850 BCS49C

    Untitled

    Abstract: No abstract text available
    Text: PLESSEY SEMICOND/DISCRETE :r 03 DE 1 7 B 2 0 5 3 3 □ OGbL.lb T '- BC846 BC848 BC850 NPN silicon planar general purpose transistors -2. f - f S BC847 BC849 ABSOLUTE MAXIMUM RATINGS Symbol BC846 BC847 BC848 BC849 BC850 Parameter Collector-base voltage Unit


    OCR Scan     		PDF BC846 BC848 BC850 BC847 BC849 BC849 BC850

    Untitled

    Abstract: No abstract text available
    Text: BC849 BC850 SILICON PLANAR EPITAXIAL TRANSISTORS N - P - N transistors M a rk in g BC849 = 2D BC849B = 2B BC849C = 2C BC850 = 2H BC850B = 2F 8C850C = 2G PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN m m 3.0 2.8 0.48 - — s !^ _ P in c o n fig u ra tio n 2,6


    OCR Scan     		PDF BC849 BC850 BC849B BC849C BC850B 8C850C

    BC850C

    Abstract: NB SOT-23 NPN BC849 BC849B BC849C BC850 BC850B BC850C equivalent
    Text: 7110ÖPb 00bö42fl 2ST • P H I N BC849 BC850 SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in a plastic SOT-23 package. QUICK REFERENCE DATA BC849 BC850 Collector-emitter voltage V gg = 0 V CES max. 30 50 V Collector-emitter voltage (open base)


    OCR Scan     		PDF 7110flBb BC849 BC850 OT-23 BC850 110fi2b BC850C NB SOT-23 NPN BC849B BC849C BC850B BC850C equivalent

    W15NA

    Abstract: No abstract text available
    Text: E3fl33T4 DÜ OÜTBT W BC849 BC850 SILICON PLANAR EPITAXIAL TRANSISTORS N -P-N transistors Marking BC849 = 2D BC849B = 2B BC849C = 2C BC850 = 2H BC850B = 2F 8C850C = 2G Pin configuration PA CKA G E O U TLINE DETAILS A LL D IM ENSIO NS IN m m _3.0_ 2.8 0.14


    OCR Scan     		PDF E3fl33T4 BC849 BC850 BC849B BC849C BC850B 8C850C W15NA

    IC marking jw

    Abstract: BC849 BC849B BC849C BC850 BC850B BC850C
    Text: £ 3 0 3 3 *1 4 DÜÜÜ73T 4^=1 m BC849 BC850 SILICON PLANAR EPITAXIAL TRANSISTORS N -P -N transistors Marking BC849 = 2D BC849B = 2B BC849C = 2C BC850 = 2H BC850B = 2F 8C8S0C = 2G Pin configuration PA CKA GE O UTLIN E D ETAILS ALL D IM EN SIO N S IN mm _3.0_


    OCR Scan     		PDF BC849 BC850 BC849B BC849C BC850B 100frequency IC marking jw BC849 BC849B BC849C BC850 BC850B BC850C

    bc850

    Abstract: No abstract text available
    Text: BC849 BC850 SILICON PLANAR EPITAXIAL TRANSISTORS N-P N transistors in a plastic SO T-23 package. Q U IC K R E F E R E N C E D A T A BC849 BC850 V CES max. 30 50 v CEO max. 30 45 C o lle ctor cu rre n t peak value 'CM max. 200 200 T ota l power dissipation up to T am fj = 25 °C


    OCR Scan     		PDF BC849 BC850 BC850 BC849B BC850B