BCR 1 L 12 Search Results

BCR 1 L 12 Price and Stock

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Visual Communications Company PMRL125W12-BCR28H-WT LED Panel Mount Indicators PMI Round LED .230" T1 Red 28v
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	PMRL125W12-BCR28H-WT					1 $10.4 10 $7.81 100 $6.23 1000 $5.15 10000 $5.15	Get Quote
Infineon Technologies AG BCR402W12VLEDBOARDTOBO1 LED Lighting Development Tools 12V BCR402W demoboard driving 3 x 0.2W LEDs in series
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	BCR402W12VLEDBOARDTOBO1					1 $17.55 10 $17.55 100 $17.55 1000 $17.55 10000 $17.55	Get Quote
Renesas Electronics Corporation BCR12FM-12LB#BG0 Triacs Power Module - Lead Free
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Mouser Electronics	BCR12FM-12LB#BG0					1 - 10 - 100 - 1000 - 10000 $1.1	Get Quote
Renesas Electronics Corporation BCR16FM-12LB#BG0 Triacs POWER TRS1 HV-THYRISTOR
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Mouser Electronics	BCR16FM-12LB#BG0					1 - 10 - 100 - 1000 $1.42 10000 $1.29	Get Quote
Renesas Electronics Corporation BCR40RM-12LB#B00 Triacs POWER TRANSISTOR TRIAC 600V 40A
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Mouser Electronics	BCR40RM-12LB#B00					1 - 10 - 100 - 1000 $4.06 10000 $3.9	Get Quote

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BCR 1 L 12 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
TRIAC BCR 16 km Abstract: PJ 1199 diode TRIAC BCR 12 km catalog transistor TO-220-AR RENESAS marking code package triac sot 89 TRIAC BCR 10 AM pj 999 diode TO-92-AB 110N04 Text: Part Numbers Part Numbers 1 to 2 Part No. Destination Thyristor and triac Part No. designation CR 8 K M -12 A BCR 8 C M -12 L A Power Transistor Product No. Designation Renesas Uniform Product Number Current ratings (Ex.) Version Commutation characteristics (Triac only)	Original	R07CS0003EJ0200 TRIAC BCR 16 km PJ 1199 diode TRIAC BCR 12 km catalog transistor TO-220-AR RENESAS marking code package triac sot 89 TRIAC BCR 10 AM pj 999 diode TO-92-AB 110N04	PDF
W967d6hb Abstract: W967 CRAM 256mb Text: W967D6HB 128Mb Async./Page,Syn./Burst CellularRAM 1. GENERAL DESCRIPTION Winbond CellularRAM products are high-speed, CMOS pseudo-static random access memories developed for low-power, portable applications. The device has a DRAM core organized. These devices include an industrystandard burst mode Flash interface that dramatically increases read/write bandwidth compared with other lowpower SRAM or Pseudo SRAM offerings.	Original	W967D6HB 128Mb A01-003 W967d6hb W967 CRAM 256mb	PDF
MT45W8MW16BGX-7013LWT Abstract: MT45W8MW16 FBGA DECODER MT45W8MW16BGX Text: 128Mb: 8 Meg x 16 Async/Page/Burst CellularRAM 1.5 Async/ Page/Burst CellularRAM 1.5 Memory Async/Page/Burst CellularRAMTM 1.5 MT45W8MW16BGX Features Figure 1: • Single device supports asynchronous, page, and burst operations • VCC, VCCQ voltages – 1.70–1.95V VCC	Original	128Mb: MT45W8MW16BGX 09005aef80ec6f79/Source: 09005aef80ec6f65 MT45W8MW16BGX-7013LWT MT45W8MW16 FBGA DECODER MT45W8MW16BGX	PDF
Untitled Abstract: No abstract text available Text: 128Mb: 8 Meg x 16 Async/Page/Burst CellularRAM 1.5 Features Async/Page/Burst CellularRAMTM 1.5 MT45W8MW16BGX Features Figure 1: • Single device supports asynchronous, page, and burst operations • VCC, VCCQ voltages – 1.70–1.95V VCC – 1.7–3.3V1 VCCQ	Original	128Mb: MT45W8MW16BGX 09005aef80ec6f79/Source: 09005aef80ec6f65	PDF
Untitled Abstract: No abstract text available Text: 128Mb: 8 Meg x 16 Async/Page/Burst CellularRAM 1.5 Features Async/Page/Burst CellularRAMTM 1.5 MT45W8MW16BGX Features Figure 1: • Single device supports asynchronous, page, and burst operations • VCC, VCCQ voltages: 1.7V–1.95V VCC 1.7V–3.3V1 VCCQ • Random access time: 70ns	Original	128Mb: MT45W8MW16BGX 09005aef80ec6f79/Source: 09005aef80ec6f65	PDF
Untitled Abstract: No abstract text available Text: W957D6HB 128Mb Async./Burst/Sync./A/D MUX 1. GENERAL DESCRIPTION Winbond x16 ADMUX products are high-speed, CMOS pseudo-static random access memory developed for lowpower, portable applications. The device has a DRAM core organized. These devices are a variation of the industrystandard Flash control interface, with a multiplexed address/data bus. The multiplexed address and data functionality	Original	W957D6HB 128Mb A01-004	PDF
Untitled Abstract: No abstract text available Text: 128 Mb: 8 Meg x 16 Async/Page/Burst CellularRAM 1.5 Features Async/Page/Burst CellularRAMTM 1.5 MT45W8MW16BGX Features Figure 1: • Single device supports asynchronous, page, and burst operations • VCC, VCCQ voltages: 1.7V–1.95V VCC 1.7V–3.3V1 VCCQ	Original	MT45W8MW16BGX 09005aef80ec6f79/Source: 09005aef80ec6f65	PDF
MT45W8MW16BGX Abstract: MT45W8MW16BGX-701LWT 700000H-7FFFFFH Text: PRELIMINARY‡ 8 MEG x 16 ASYNC/PAGE/BURST CellularRAM MEMORY 128Mb BURST CellularRAMTM 1.5 MT45W8MW16BGX Features Figure 1: Ball Assignment 54-Ball VFBGA • Single device supports asynchronous, page, and burst operations • Vcc, VccQ Voltages 1.7V–1.95V Vcc	Original	128Mb MT45W8MW16BGX 54-Ball 09005aef80ec6f79 pdf/09005aef80ec6f65 MT45W8MW16BGX MT45W8MW16BGX-701LWT 700000H-7FFFFFH	PDF
MT45W8MW16BGX Abstract: MT45W8MW16BGX-701LWT BDQ8 CSP3-20 Text: 8 MEG x 16 ASYNC/PAGE/BURST CellularRAM 1.5 MEMORY 128Mb BURST CellularRAMTM 1.5 MT45W8MW16BGX Features Figure 1: Ball Assignment 54-Ball VFBGA • Single device supports asynchronous, page, and burst operations • Vcc, VccQ Voltages 1.7V–1.95V Vcc 1.7V–1.95V VccQ	Original	128Mb MT45W8MW16BGX 54-Ball 39nsH 09005aef80ec6f79 pdf/09005aef80ec6f65 128Mb_ MT45W8MW16BGX MT45W8MW16BGX-701LWT BDQ8 CSP3-20	PDF
BCR100 Abstract: No abstract text available Text: 70 128Mb/64Mb Async/Page/Burst CellularRAM 1.5 Memory Figure 1: Features • Single device supports asynchronous, page, and burst operations • VCC, VCCQ voltages: 1.7V–1.95V VCC 1.7V–1.95V VCCQ • Random access time: 70ns • Burst mode READ and WRITE access:	Original	128Mb/64Mb 09005aef81d721fb pdf/09005aef81d72262 BCR100	PDF
cr1 5 p26z Abstract: No abstract text available Text: 128Mb: 8 Meg x 16 Async/Page/Burst CellularRAM 1.5 Features Async/Page/Burst CellularRAMTM 1.5 MT45W8MW16BGX Features Figure 1: • Single device supports asynchronous, page, and burst operations • VCC, VCCQ voltages: – 1.7V–1.95V VCC – 1.7V–3.3V1 VCCQ	Original	128Mb: MT45W8MW16BGX 09005aef80ec6f79/Source: 09005aef80ec6f65 cr1 5 p26z	PDF
MARKING 68W SOT-23 Abstract: marking code 67a sot23 6 sot143 Marking code 5B baw 92 SOT-363 marking CF 54 fk SOT-23 BAT 545 SOT-363 marking BF sot-89 MARKING CODE BN MARKING CODE DH SOT 23 Text: Marking Sorted by Code Marking Type Package Marking Type Package 13 13s 14 14s 15 15s 16 16s 17 17s 1A 1A 1A 1As 1B 1B 1Bs 1Bs 1C 1D 1D 1Ds 1E 1Es 1F 1F 1Fs 1G 1G 1G 1Gs 1J 1J 1Js 1K 1K 1K 1K BAS 125 BAS 125W BAS 125-04 BAS 125-04W BAS 125-05 BAS 125-05W BAS 125-06	Original	25-04W 25-05W 25-06W 25-07W 3904S 846AT 846BW 846BT 847AT 847BW MARKING 68W SOT-23 marking code 67a sot23 6 sot143 Marking code 5B baw 92 SOT-363 marking CF 54 fk SOT-23 BAT 545 SOT-363 marking BF sot-89 MARKING CODE BN MARKING CODE DH SOT 23	PDF
micron memory sram Abstract: a22 package marking label infineon Micron 32MB NOR FLASH DEVICE MARKING CODE table dram zip INFINEON transistor marking label infineon application note marking code C5 RCR Resistor Text: 8 MEG x 16 ASYNC/PAGE/BURST CellularRAM 1.5 MEMORY 128Mb BURST CellularRAMTM 1.5 MT45W8MW16BGX Features Figure 1: Ball Assignment 54-Ball VFBGA • Single device supports asynchronous, page, and burst operations • Vcc, VccQ Voltages 1.7V–1.95V Vcc 1.7V–1.95V VccQ	Original	128Mb MT45W8MW16BGX 54-Ball 09005aef80ec6f79 pdf/09005aef80ec6f65 128Mb_ micron memory sram a22 package marking label infineon Micron 32MB NOR FLASH DEVICE MARKING CODE table dram zip INFINEON transistor marking label infineon application note marking code C5 RCR Resistor	PDF
Untitled Abstract: No abstract text available Text: SIEMENS BCR 569 PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R-\|=4.7kfl JZL LÜ XLs UPON INQUIRY 1 =B Package o BCR 569 Pin Configuration II CO Marking Ordering Code liJ HI II	OCR Scan	OT-23	PDF

marking code 604 SOT23 Abstract: marking 603 npn transistor Text: SIEMENS BCR 119 NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit >Built in bias resistor R1=4.7kii JZ L nr Pin Configuration h Package O 1 =B CO Q62702-C2255 h WKs m Marking Ordering Code BCR 119 ro Type nr	OCR Scan	Q62702-C2255 OT-23 40fnm 300ns; marking code 604 SOT23 marking 603 npn transistor	PDF
Untitled Abstract: No abstract text available Text: SIEMENS BCR 135W NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R ^ IO k fi, R2=47Ki2 _E L ÜJ Type Marking Ordering Code BCR 135W WJs n r Pin Configuration Q62702-C2287 1= B Package	OCR Scan	47Ki2) Q62702-C2287 OT-323	PDF
marking code sot-23 697 Abstract: marking code sot23 697 Text: SIEMENS BCR 169 PNP S ilicon D igital Transistor * Switching circuit, inverter, interface circuit, driver circuit * Built in bias resistor R1 = 4.7kiî F L nr W Type Marking Ordering Code Pin C onfiguration BCR 169 WSs 1=B Q62702-C2340 Package 2=E 3=C SOT-23	OCR Scan	Q62702-C2340 OT-23 pcb40mm marking code sot-23 697 marking code sot23 697	PDF
103GCR050M Abstract: No abstract text available Text: BCR/GCR GMR/GQR Ceram ic Disc Selector Guide DESCRIPTION CAPACITANCE VOLTAGE CAPACITANCE TOLERANCE TEMPERATURE COEFFICIENT BCR T e m p era ture S ta b le 1 p f to 6 8 0 pf 50 W VD C ±10% Y5F GCR G e n e ra l P u rp o s e .001 M F D to .1 M F D 50 W VD C TYPE	OCR Scan	102GQR500Z 103GQR500Z 103GCR050M	PDF
562 sot23 Abstract: Transistor Bo 47 Text: SIEMENS BCR 562 PNP Silicon Digital Transistor >Switching circuit, inverter, interface circuit, driver circuit >Built in bias resistor Ri=4.7kQ, R2=4.7k£i ÍZ L Type Marking Ordering Code Pin Configuration B C R 562 XUs 1=B Q62702-C2356 Package 2=E 3=C	OCR Scan	Q62702-C2356 OT-23 562 sot23 Transistor Bo 47	PDF
Untitled Abstract: No abstract text available Text: b - * V-i-ii1 - I d I- 'l.'- '- i r -Id k f ELECTRICAL 62 ft B t 1 F F G - 1 PARAMETERS ± 51 uH 2.51 BCR 8.5D OHHS SRF ID.5 H h z CURRENT 15 C U7 RESE APPLICABLE LASER 2.5D 3D HIN. Ì .ue rn .13S .105 TD .115 .1 L FD .III .1Lb H in. .141 FD .191 .171 REF. DHL V	OCR Scan	344fc 121D-S23J	PDF
Untitled Abstract: No abstract text available Text: [oioia T-1 PCB MOUNT LEDi Dual-Stackei Data Display Products F o r D e ta ile d L E D D a ta , S e e D is c re te S e c tio n , M O D E L 12: Top LED PCT125 \| Right Angle Mount -ER -ECR -EWR -PCR -RQ -BR -BCR -EA -ECA -EWA -PCA -AQ -BA -BCA -EAY -ECAY -EWAY	OCR Scan	PCT125 -BR12V -BA12V -BG12V /BR12V /BA12V /BG12V 125-BX, -BX12V	PDF
BCR16HM Abstract: BCR16HM-4 BCR16HM-10 BCR16HM-12 BCR16HM-6 BCR16HM-8 Text: - 185 L f f i f r h b :s 3 > •-<1- V h O ^ "7 im -f- — : - * i b j , a c 2200V i f t m n S lH tttt t .= Œ : ( 2 5*0 ¡01] I drm Vtm B C R 1 6 H M -4 BCR 1 6 H M -6 BC R 1 6 H M -8 BCR16HM -10 B CR16H M -12 V dsm 300 400 600 700 800 V drm 200 300 400	OCR Scan	BCR16HM MT-23 BCR16HM-4 BCR16HM-6 BCR16HM-8 BCR16HM-10 BCR16HM-12 H-101 BCR16HM-12	PDF
BCR10EM-10 Abstract: TA8250 BCR10AM-4 BCR10AM BCR10AM-8 BCR10AM-12 BCR10AM-10 BCR10EM-6 BCR10EM-8 BCR10EM-4 Text: 178 - — H B C R 1O AM • * » 0 # ^ o f K í/ c f t iT r W f f i R f f l O if 7 ¿ ï^ f t iïr iiJM (L ffl) W h h 3 > 0 £ 7 ) W i - ^ K f lt & iW .m .) i-fc • i E ■ * * Ä # BCR 1 0 AM -6 B C R 1 0 A M -8 BCR10AM -10 Vd s m 300 400 600 700 800	OCR Scan	BCR10AM-4 BCR10AM-6 BCR10AM-8 BCR10AM-10 BCR10AM-12 H-101 BCR10EM-10 TA8250 BCR10AM BCR10AM-12 BCR10EM-6 BCR10EM-8 BCR10EM-4	PDF
8CR1 Abstract: BCR1 bcr resistor Text: MODEL SERIES BCR Thick Film Chip Resistors • m m m .ii." J i i m im • Seven Styles/Six Power Ratings Available - Including the popular 0402, 0603, 0805 and 1206 versions ■Tight Dimensional Tolerances - Ensure reliable high yield board assembly 1Nickel Barrier Terminations - For long term solder joint reliability	OCR Scan	BCR1/32 8CR1 BCR1 bcr resistor	PDF

BCR 1 L 12 Search Results

BCR 1 L 12 Price and Stock

Visual Communications Company PMRL125W12-BCR28H-WT

Infineon Technologies AG BCR402W12VLEDBOARDTOBO1

Renesas Electronics Corporation BCR12FM-12LB#BG0

Renesas Electronics Corporation BCR16FM-12LB#BG0

Renesas Electronics Corporation BCR40RM-12LB#B00

BCR 1 L 12 Datasheets Context Search

TRIAC BCR 16 km

W967d6hb

MT45W8MW16BGX-7013LWT

Untitled

Untitled

Untitled

Untitled

MT45W8MW16BGX

MT45W8MW16BGX

BCR100

cr1 5 p26z

MARKING 68W SOT-23

micron memory sram

Untitled

marking code 604 SOT23

Untitled

marking code sot-23 697

103GCR050M

562 sot23

Untitled

Untitled

BCR16HM

BCR10EM-10

8CR1