marking Z1
Abstract: BCR847BF
Text: ESD5V3U2U. Ultra-Low Capacitance ESD Diode Array • ESD / transient protection of high-speed data lines exceeding IEC61000-4-2 ESD : 20 kV (air / contact) IEC61000-4-4 (EFT): 40 A (5/50 ns) IEC61000-4-5 (surge): 3 A (8/20 µs) • Max. working voltage: 5.3 V
|
Original
|
IEC61000-4-2
IEC61000-4-4
IEC61000-4-5
ESD5V3U2U-03F
ESD5V3U2U-03LRH
marking Z1
BCR847BF
|
PDF
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BCR108W
Abstract: BCR142 BCR142F BCR142W BCW66
Text: BCR142. NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=22kΩ, R2 =47kΩ • Pb-free (RoHS compliant) package1) • Qualified according AEC Q101 BCR142/W BCR142F C 3 R1 R2
|
Original
|
BCR142.
BCR142/W
BCR142F
EHA07184
BCR142
BCR142W
OT323
BCR108W
BCR142
BCR142F
BCR142W
BCW66
|
PDF
|
marking code MS SOT323
Abstract: BC846 BC850 BC856 BC856A BC856B BC856BW BC857A BC857B BC860
Text: BC856.-BC860. PNP Silicon AF Transistor • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Low noise between 30 hz and 15 kHz • Complementary types: BC846.-BC850. NPN • Pb-free (RoHS compliant) package 1)
|
Original
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BC856.
-BC860.
BC846.
-BC850.
BC856A
BC856B
BC856BW
OT323
marking code MS SOT323
BC846
BC850
BC856
BC856A
BC856B
BC856BW
BC857A
BC857B
BC860
|
PDF
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BCR135
Abstract: BCR108W BCR135F BCR135S BCR135W BCW66
Text: BCR135. NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit driver circuit • Built in bias resistor R1=10 kΩ, R2=47 kΩ • BCR135S: Two internally isolated transistors with good matching in one multichip package • BCR135S: For orientation in reel see
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Original
|
BCR135.
BCR135S:
BCR135/F
BCR135W
BCR135S
EHA07184
EHA07174
BCR135
BCR135F
BCR135
BCR108W
BCR135F
BCR135S
BCR135W
BCW66
|
PDF
|
BCR108W
Abstract: BCR192 BCR192F BCR192W BCW66
Text: BCR192. PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 = 22kΩ , R2 = 47kΩ • Pb-free (RoHS compliant) package 1) • Qualified according AEC Q101 BCR192/F/W C 3 R1 R2
|
Original
|
BCR192.
BCR192/F/W
EHA07183
BCR192
BCR192F
BCR192W
OT323
BCR108W
BCR192
BCR192F
BCR192W
BCW66
|
PDF
|
BCR847BF
Abstract: BCR179 BCR179F
Text: BCR179. PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit. • Built in bias resistor R1 = 10 kΩ • Pb-free (RoHS compliant) package 1) • Qualified according AEC Q101 BCR179F C 3 R1 1 2 B E EHA07180
|
Original
|
BCR179.
BCR179F
EHA07180
BCR847BF
BCR179
BCR179F
|
PDF
|
Untitled
Abstract: No abstract text available
Text: BCR119. NPN silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in resistor R1=4.7 kΩ • BCR119S: Two internally isolated transistors with good matching in one multichip package • BCR119S: For orientation in reel see
|
Original
|
BCR119.
BCR119S:
BCR119/F/W
BCR119S
EHA07264
EHA07265
BCR119
BCR119F
|
PDF
|
Untitled
Abstract: No abstract text available
Text: ESD5V3U2U. Ultra-Low Capacitance ESD Diode Array • ESD / transient protection of high-speed data lines exceeding IEC61000-4-2 ESD : 20 kV (air / contact) IEC61000-4-4 (EFT): 40 A (5/50 ns) IEC61000-4-5 (surge): 3 A (8/20 µs) • Max. working voltage: 5.3 V
|
Original
|
IEC61000-4-2
IEC61000-4-4
IEC61000-4-5
ESD5V3U2U-03F
ESD5V3U2U-03Ls
|
PDF
|
Untitled
Abstract: No abstract text available
Text: BCR135. NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit driver circuit • Built in bias resistor R1=10 kΩ, R2=47 kΩ • BCR135S: Two internally isolated transistors with good matching in one multichip package • BCR135S: For orientation in reel see
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Original
|
BCR135.
BCR135S:
BCR135/F
BCR135W
BCR135S
EHA07184
EHA07174
BCR135
BCR135F
|
PDF
|
MARKING 3FS
Abstract: MARKING CODE 21E SOT23 marking 3ks
Text: BC856.-BC860. PNP Silicon AF Transistor • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Low noise between 30 hz and 15 kHz • Complementary types: BC846.-BC850. NPN 1 2006-09-29
|
Original
|
BC856.
-BC860.
BC846.
-BC850.
BC856A
BC856B
BC856BW
BC857A
MARKING 3FS
MARKING CODE 21E SOT23
marking 3ks
|
PDF
|
Untitled
Abstract: No abstract text available
Text: BFR340F NPN Silicon RF Transistor* • Low voltage/ low current operation • Transition frequency of 14 GHz 2 3 1 • High insertion gain • Ideal for low current amplifiers and oscillators • Pb-free RoHS compliant package 1) • Qualified according AEC Q101
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Original
|
BFR340F
|
PDF
|
Untitled
Abstract: No abstract text available
Text: BCR191. PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 = 22 kΩ , R2 = 22 kΩ BCR191/F/L3 BCR191T/W C 3 R1 R2 1 B 2 E EHA07183 Type Marking Pin Configuration BCR191 WOs
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Original
|
BCR191.
BCR191/F/L3
BCR191T/W
EHA07183
BCR191
BCR191F
BCR191L3
BCR191T
BCR191W
OT323
|
PDF
|
Untitled
Abstract: No abstract text available
Text: BCR135. NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit driver circuit • Built in bias resistor R1=10 kΩ, R2=47 kΩ • BCR135S: Two internally isolated transistors with good matching in one multichip package • BCR135S: For orientation in reel see
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Original
|
BCR135.
BCR135S:
BCR135/F/L3
BCR135T/W
BCR135S
EHA07184
EHA07174
BCR135
BCR135F
|
PDF
|
Untitled
Abstract: No abstract text available
Text: BC857BF.BC860BF PNP Silicon AF Transistor • For AF input stages and driver applications 2 3 • High current gain • Low collector-emitter saturation voltage 1 • Low noise between 30 Hz and 15 kHz • Complementary types: BC847BF, BC848BF BC849BF, BC850BF NPN
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Original
|
BC857BF.
BC860BF
BC847BF,
BC848BF
BC849BF,
BC850BF
BC857BF
BC858BF
BC859BF
|
PDF
|
|
|
Untitled
Abstract: No abstract text available
Text: BCR164. PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 = 4.7kΩ , R2 = 10kΩ BCR164F/L3 BCR164T C 3 R1 R2 1 B 2 E EHA07183 Type Marking Pin Configuration Package BCR164F*
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Original
|
BCR164.
BCR164F/L3
BCR164T
EHA07183
BCR164F*
BCR164L3*
BCR164T*
dissipationBCR164F,
BCR164L3,
BCR164T,
|
PDF
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bfr949
Abstract: BFR949F
Text: BFR949F NPN Silicon RF Transistor* • For low noise, high-gain broadband amplifiers at 2 3 collector currents from 1 mA to 20 mA 1 • fT = 9 GHz, F = 1 dB at 1 GHz * Short term description ESD Electrostatic discharge sensitive device, observe handling precaution!
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Original
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BFR949F
50mponents
bfr949
BFR949F
|
PDF
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ua 722 fc
Abstract: BCR847BF MARKING rks BFR94
Text: BFR949F NPN Silicon RF Transistor Preliminary data For low noise, high-gain broadband amplifiers at 2 3 collector currents from 1 mA to 20 mA fT = 9 GHz 1 F = 1 dB at 1 GHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type
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Original
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BFR949F
ua 722 fc
BCR847BF
MARKING rks
BFR94
|
PDF
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BFR360F
Abstract: AN077
Text: BFR360F NPN Silicon RF Transistor • Low noise amplifier for low current applications • Collector design supports 5V supply voltage 2 3 1 • For oscillators up to 3.5 GHz • Low noise figure 1.0 dB at 1.8 GHz • Pb-free RoHS compliant package • Qualified according AEC Q101
|
Original
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BFR360F
BFR360F
AN077
|
PDF
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BFR340F
Abstract: AN077 BFR340F TSFP-3
Text: BFR340F NPN Silicon RF Transistor • General purpose Low Noise Amplifier • Ideal for low current operation 2 3 1 • High breakdown voltage enables operation in automotive applications • Minimum noise figure 1.0 dB @ 1mA,1.5V,1.9GHz • Small package 1,2 x 1,2 mm 2 with visible leads
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Original
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BFR340F
BFR340F
AN077
BFR340F TSFP-3
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PDF
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BCR108W
Abstract: BCR129 BCR129F BCR129S BCR129W BCW66
Text: BCR129. NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=10 kΩ • BCR129S: Two internally isolated transistors with good matching in one multichip package • BCR129S: For orientation in reel see
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Original
|
BCR129.
BCR129S:
BCR129/F
BCR129W
BCR129S
EHA07264
EHA07265
BCR129
BCR129F
BCR108W
BCR129
BCR129F
BCR129S
BCR129W
BCW66
|
PDF
|
E6327
Abstract: BCR101 BCR101F BCR101L3 BCR101T BCR108T SC75
Text: BCR101. NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 = 100kΩ , R2 = 100kΩ BCR101F/L3 BCR101T C 3 R1 R2 1 B 2 E EHA07184 Type Marking Pin Configuration Package BCR101F*
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Original
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BCR101.
BCR101F/L3
BCR101T
EHA07184
BCR101F*
BCR101L3*
BCR101T*
E6327
BCR101
BCR101F
BCR101L3
BCR101T
BCR108T
SC75
|
PDF
|
DIN 6784 c1
Abstract: DIN 6784 E6327 BCR192 BCR192F BCR192L3 BCR192T BCR192U BCR192W infineon marking code B2 SOT23
Text: BCR192. PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 = 22kΩ , R2 = 47kΩ • For 6-PIN packages: two (galvanic) internal isolated transistors with good matching in one package
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Original
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BCR192.
BCR192/F/L3
BCR192T/W
BCR192U
EHA07173
EHA07183
BCR192
BCR192F
BCR192L3
BCR192T
DIN 6784 c1
DIN 6784
E6327
BCR192
BCR192F
BCR192L3
BCR192T
BCR192U
BCR192W
infineon marking code B2 SOT23
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PDF
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BCR108T
Abstract: BCR196 BCR196F BCR196L3 BCR196T BCR196W SC75
Text: BCR196. PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 = 47kΩ , R2 = 22kΩ BCR196/F/L3 BCR196T/W C 3 R1 R2 1 B 2 E EHA07183 Type Marking Pin Configuration BCR196 WXs 1=B
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Original
|
BCR196.
BCR196/F/L3
BCR196T/W
EHA07183
BCR196
BCR196F
BCR196L3
BCR196T
BCR196W
OT323
BCR108T
BCR196
BCR196F
BCR196L3
BCR196T
BCR196W
SC75
|
PDF
|
BCR198W
Abstract: BCR198 BCR198F BCR198L3 BCR198S BCR198T SCD80
Text: BCR198. PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 = 47 kΩ , R2 = 47 kΩ • BCR198S: Two internally isolated transistors with good matching in one multichip package
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Original
|
BCR198.
BCR198S:
BCR198/F/L3
BCR198T/W
BCR198S
EHA07183
EHA07173
BCR198
BCR198F
BCR198W
BCR198
BCR198F
BCR198L3
BCR198S
BCR198T
SCD80
|
PDF
|