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    BCY 65 Search Results

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    Part ECAD Model Manufacturer Description Download Buy
    LM143H/883 Rochester Electronics LLC Operational Amplifier, 1 Func, 6000uV Offset-Max, BIPolar, MBCY8, METAL CAN, BCY-8 Visit Rochester Electronics LLC Buy
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    BCY 65 Price and Stock

    onsemi NCP1365BABCYDR2G

    Switching Controllers NCP1365 HV CONTROLLER
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    Mouser Electronics NCP1365BABCYDR2G 2,461
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    Zetex / Diodes Inc BCY65EBES

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    Quest Components BCY65EBES 1,764
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    FERENT BCY65EC

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    Quest Components BCY65EC 178
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    BCY 65 Datasheets (86)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BCY65 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    BCY65 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    BCY65 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    BCY65 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    BCY65 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    BCY65 Philips Semiconductors Silicon Planar Epitaxial Transistor Scan PDF
    BCY65E Ferranti Semiconductors Metal Can Transistors (Short Form) Scan PDF
    BCY65E Ferranti Semiconductors Quick Reference Guide 1985 Scan PDF
    BCY65E Micro Electronics Semiconductor Device Data Book Scan PDF
    BCY65E Micro Electronics Low Level and General Purpose Amplifiers Scan PDF
    BCY65E Motorola The European Selection Data Book 1976 Scan PDF
    BCY65E Unknown Shortform Transistor PDF Datasheet Short Form PDF
    BCY65E Unknown Shortform Transistor PDF Datasheet Short Form PDF
    BCY65E Unknown Diode, Transistor, Thyristor Datasheets and more Scan PDF
    BCY65E Unknown Shortform Transistor Datasheet Guide Short Form PDF
    BCY65E Siemens Semiconductor Manual, Discrete Industrial Types 1974 Scan PDF
    BCY65E Siemens NPN silicon planar transistors Scan PDF
    BCY65E Siemens Semiconductor Data Book (German) 1976/77 Scan PDF
    BCY65E Zetex Semiconductors Quick Reference Guide (Discrete Semiconductors) 1991 Scan PDF
    BCY65E7 Unknown Shortform Transistor Datasheet Guide Short Form PDF

    BCY 65 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    65e7

    Abstract: BCY65 BCY 59 bcy58 59VIII BCY58-VIII BCY59 Q60203-Y58-G BCY 65 Q60203-Y59-J
    Text: BCY 58, BCY 59, BCY 65 E ~ 2 N 2483 NPN Transistors fo r AF prestages, driver stages and switching applications BCY 58, BCY 59 and BCY 65 E are silicon planar NPN epitaxial transistors in a case 18 A 3 DIN 41 876 (TO -18). The collector is electrically connected to the case.


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    Q60203-Y58-G Q60203-Y Q60203-Y58-J Q60203-Y58-K Q60203-Y59-J Q60203-Y59-K 65-E7 65e7 BCY65 BCY 59 bcy58 59VIII BCY58-VIII BCY59 BCY 65 PDF

    BCY71

    Abstract: BCY 107 BCY72 100-C bcy72a bcy70
    Text: BCY 70 BCY 71 BCY 72 SILICON PLANAR PNP GENERAL PURPOSE APPLICATIONS The BCY 70, BCY 71 and BCY 72 are silicon planar epitaxial PNP transistors in Jedec TO-18 metal case. They are intended for general purpose amplifier and switching applica­ tions. ABSOLUTE MAXIMUM RATINGS


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    BCY 107

    Abstract: BCY 62 BCY71 BCY72 BCY 12 bcy70
    Text: BCY 70 BCY 71 BCY 72 SILICON PLANAR PNP GENERAL PURPOSE APPLICATIONS The BCY 70, BCY 71 and BCY 72 are silicon planar epitaxial F‘NP transistors in Jedec T O -1 8 metal case. They are intended fo r general purpose am p lifie r and switching applica­ tions.


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    G--18S1 BCY 107 BCY 62 BCY71 BCY72 BCY 12 bcy70 PDF

    BCY 59

    Abstract: BCY 12 BCY58X BCY 85 BCY59 BCY59X BCY58 BCY58-VIII Ucesat BCY 58
    Text: N P N -Transistoren fü r N F -V o r- und T re ib erstu fen sow ie S ch alteran w en dungen - BCY 58 BCY 59 BCY 65 E BCY 58, BCY 59 und BCY 65 E sind epitaktische NPN-Silizium -Planar-Transistoren im Gehäuse 18 A 3 DIN 41 876 T O -1 8 . Der Kollektor ist m it dem Gehäuse elektrisch ver­


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    Q60203- BCY 59 BCY 12 BCY58X BCY 85 BCY59 BCY59X BCY58 BCY58-VIII Ucesat BCY 58 PDF

    BCY79

    Abstract: bcy 78 bcy 79
    Text: BCY 78 BCY 79 PNP SILICON TRANSISTOR TRANSISTOR PNP S ILIC IU M Compì, of BCY 58 and BCY 59 • Switching and amplifier Commutation e t am plification -3 2 V BCY 78 v CEO -4 5 V BCY 79 'c - 2 0 0 mA M a xim u m pow er dissipation Case TO-18 — See outline drawing CB-6 on last pages


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    i-10mA 990i2, BCY79 bcy 78 bcy 79 PDF

    bcy580

    Abstract: BCY590 transistor h21e SCHEMA BCY59 BCY 59
    Text: *BCY 58 BCY59 NPN SILICON TRANSISTOR TRANSÌSTOR NPN S ILIC IU M Compì, of BCY 78 and BCY 79 Preferred device Dispositif recommandé • For switching and amplifier - Pour com m utation et am plification V CEO 32 V 45 V BCY 58 •c 200 mA BCY 59 Maximum power dissipation


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    BCY59 lB2ai10mA bcy580 BCY590 transistor h21e SCHEMA BCY59 BCY 59 PDF

    BCY77

    Abstract: BCY79 BCY 791x zr 4.7v bcy 78 Q62702-C327 BCY78 Q62702-C327-V1 Transistor 78 L 05 1Zv transistor
    Text: BCY77, BCY 78, BCY79 PNP Transistors for low-noise AF pre- and driver stages BCY 77, BCY 78 and BCY 79 are epitaxial PNP silicon planar transistors in a case 18 A 3 DIN 41876 TO-18 . The collector is electrically connected to the case. The transistors are of particular use in low-noise AF pre- and driver stages as well as in


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    BCY77, BCY79 BCY78 Q62702-C327-V1 Q62702-C 327-V2 327-V3 Q60203-Y78-G BCY77 BCY79 BCY 791x zr 4.7v bcy 78 Q62702-C327 Q62702-C327-V1 Transistor 78 L 05 1Zv transistor PDF

    BCY77VII

    Abstract: BCY78X BCY79 BCY 791x BCY77VIII BCY77 BCY78 Q62702-C327-V1 1Zv transistor
    Text: BCY77, BCY 78, BCY79 PNP Transistors for low-noise AF pre- and driver stages BCY 77, BCY 78 and BCY 79 are epitaxial PNP silicon planar transistors in a case 18 A 3 DIN 41876 TO-18 . The collector is electrically connected to the case. The transistors are of particular use in low-noise AF pre- and driver stages as well as in


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    BCY79 BCY77, BCY78 Q62702-C327-V1 Q62702-C 327-V2 327-V3 Q60203-Y78-G Q60203-Y78-H BCY77VII BCY78X BCY79 BCY 791x BCY77VIII BCY77 Q62702-C327-V1 1Zv transistor PDF

    tfk 731

    Abstract: N100700 bcy 79 BCY58 BCY 65 BCY 59
    Text: BCY 58 • BCY 59 Silizium-NPN-Epitaxial-Planar-Transistoren Silicon NPN Epitaxial Planar Transistors Anwendungen: Allgem ein und NF-Verstärker Applications: General and AF am plifiers Besondere Merkmale: Features: • Verlustleistung 1 W 0 Power dissipation 1 W


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    BCY69

    Abstract: BCY 69 transistor 468
    Text: BCY 69 NPN SILICON TRANSISTOR, EPITAXIAL PLANAR TRANSISTOR NPN S ILICIUM , PLANAR EPITAXIAL - LF small signal amplification low noise Amplification BP petits signaux (faible bruit) v CEO 20 V 'c 100 mA *216 (2 600 - 900 F (0,2 mA) 5 dB max Maximum power dissipation


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    BCY67

    Abstract: HTI 2E 101S Q62702-C254
    Text: BCY67 PNP Transistor for low-noise AF pre-stages BCY 67 is an epitaxial PNP silicon planar transistor in a case 18 A 3 DIN 41 876 T O -18 . The collector is electrically connected to the case. The transistor has been designed for especially low-noise pre-stages as well as in


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    BCY67 BCY67 10ZkHz HTI 2E 101S Q62702-C254 PDF

    Q62702-C327

    Abstract: BCY79 BCY 12 C327 78-VIII 79IX 34RR
    Text: PIMP-Transistoren für rauscharm e NF-Vor- und B C Y 77 Treiberstufen B C Y 78 -B C Y 79 BC Y 77; BC Y 78; BC Y 79 sind epitaktische PNP-Silizium-Planar-Transistoren im Gehäuse 18 A3 DIN 41 876 TO -18 . Der Kollektor ist mit dem Gehäuse elektrisch verbunden. Die


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    Q62702- -C327-V1 -C327-V2 -C327-V3 Q60203- -Y78-G -Y78-H Q62702-C327 BCY79 BCY 12 C327 78-VIII 79IX 34RR PDF

    transistor BC 584

    Abstract: TRANSISTOR BC 456 Transistor BC 585 transistor BC 583 D 92 02 78.P BFW 10 fet Transistor BFX 41 TRANSISTOR BC 416 b BC583 transistor BC 548
    Text: 6091788 MICRO ELECTRONICS C ORP 820 0064 5 05 DE § b D T 1 7 f l a QODGbMS 4 | TYPE NO. POLARITY Low Level and General Purpose Amplifiers H MAXIMUM RATINGS V CE SAT FE Cob N.F. max max (MHz) (pF) (dB) — 200+ 150 150 150 150 2.7+ 4.5 4.5 4.5 6 2 10 10 4


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    bDT17fla O-92F to-02 melf-002. transistor BC 584 TRANSISTOR BC 456 Transistor BC 585 transistor BC 583 D 92 02 78.P BFW 10 fet Transistor BFX 41 TRANSISTOR BC 416 b BC583 transistor BC 548 PDF

    bc 170

    Abstract: BC108C 173C BC174 bc 170 c transistor Bc 540 BC108A BFY19 BC 109 Transistor specification of transistor bc 107
    Text: NPN Silicon Transistors NPN Silicon Epitaxial Planar Transistors l c = 100mA for general amplifying and switching purposes Common maximum ratings - lc -V e B O 100 mA5 5 V5 Common characteristics (Tamb — 25 C) 300 mW (TO -92)3 300 mW (TO -18)4 Ti P lo t


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    100mA) BC108B BC108C. bc 170 BC108C 173C BC174 bc 170 c transistor Bc 540 BC108A BFY19 BC 109 Transistor specification of transistor bc 107 PDF

    AC125K

    Abstract: 6AN7 tungsram 3S035T-1 ecc83 application notes ECL86 DG 7-123 tungsram AC125UZ PENTODE pl 508 ot-400 tungsram
    Text: TUNGSRAM 1 ELECTRON TUBES AND SEMI­ CONDUCTORS 1979 RADIO & TV RECEIVING TUBES OSCILLOSCOPE & MONITOR TUBES TRANSMITTING TUBES, RECTIFIERS & MICROWAVE TUBES SEMICONDUCTORS RECEIVING TUBES CONSUMER TYPES INDUSTRIAL TYPES VOLTAGE REGULATORS TY P E ASSO R TM EN T


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    76665N 76889N MA748PC MA709PC jA710PC A711PC iA712PC A723PC HA741PC A747PC AC125K 6AN7 tungsram 3S035T-1 ecc83 application notes ECL86 DG 7-123 tungsram AC125UZ PENTODE pl 508 ot-400 tungsram PDF

    BC 2219a

    Abstract: BFX48 transistor 3504 npn 2N3108 2N3109 BFY50 BFY51 BFY56A
    Text: ¿ 7 7 SGS-THOMSON GENERAL PURPOSE & INDUSTRIAL ^ 7# M M I & J O T « ! SMALL SIGNAL TRANSISTORS NPN GENERAL PURPOSE TRANSISTORS - TO 39 v CEO V C ER* h FE m in/m ax 3> <C Type mA (V) v CE(sat) m ax Ï ic (mA) (V) Pfot «T min ‘ off* (M H z) (ns) (m W )


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    BFY51 BFY50 BFY56A BFX48 BC 2219a transistor 3504 npn 2N3108 2N3109 PDF

    bc 301 transistor

    Abstract: bc 303 transistor A2N transistor BC 170c transistor TRANSISTOR BC 650 c transistor BSX 82 BC211 transistor TRANSISTOR BC 313 BC211 transistor BC 56
    Text: general purpose and fast switching transistor selector guide guide de sélection transistors usage général et commutation rapide ^ THOMSON-CSF 3 a r METAL-CASE/BOITIER METAL Case TO 39 Polarity PIMP NPN ic PNP NPN 0,6.0,8 A < 0 ,2 A v C E O ^ \^ PNP PNP


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    BSX52 BSW21 BSW22 BSX51 BSW22 2N706 bc 301 transistor bc 303 transistor A2N transistor BC 170c transistor TRANSISTOR BC 650 c transistor BSX 82 BC211 transistor TRANSISTOR BC 313 BC211 transistor BC 56 PDF

    transistor vergleichsliste

    Abstract: Transistor Vergleichsliste DDR telefunken transistoren VALVO BSW69 vergleichsliste DDR vergleichsliste transistor BC-148 rft transistoren Transistoren DDR
    Text: TRANSISTOR VERGLEICHSLISTE Teil 2: Siliziumtransistoren r a d io - t e le v is io n Transistorverglèich& liste T eil 2 : S iliziu in tra n sistoren TRA N SISTO R, V ER G LEICH S LIS T E Teil 2: Siliziumtransistoren DER D EU TSCH EN M IL IT Ä R V E R L A G


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    KT 819 transistor

    Abstract: 2N2222A 338 SF129D SF137D SSY20B KT819W SF127E KFY18 321 KP303W KFY18
    Text: Deutsche Post NfD Studiotechnik Fernsehen Bauelemente - Mitteilung Nr. 6 TRANSISTORVERGLEICHSLISTE Herausgebers Halbleitervergleichsgruppe Studiotechnik Fernsehen Deutsche Post Studiotechnik Fernsehen Bauelemente-Mitteilung Nr. 6 Dez. 79 N f D T r a n s i s t o r v e r g l e i c h s l i s t e


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    LDR 03

    Abstract: valvo halbleiter LDR -03 cny63 CNY62 BYX 71 800 CXY19 VALVO ldr 07 BZW10-12
    Text: Halbleiter­ bauelemente • 1981/82 N, Bauelemente l m für die gesamte i f Elektronik V A L V O Valvo bietet das breiteste Produktprogram m an Bauelementen für die gesamte Elektronik in Deutschland: Bildröhren A blenkteile Tuner Lautsprecher Transform atoren


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    2sc 9015

    Abstract: 2SC644 CS9015 2N4248 scr 4059 transistor MPS 6518 mpsa09 2SC923 2N3550 2SC644 transistor
    Text: 7 -. SEMICONDUCTORS INC OIE I | SlBktSO 0000275 1 | ¿Lf-/? TYPE NO. ; POLARITY 1 Audio Frequency Small Signal Transistors MAXIMUM RATINGS CASE HFE Pd mW) >C (mA) VCEO (V) min max •c (mA) VCE (V) VCE(SAT) max ■c (V) (mA) fT min (MHz) Cob max (pF) 5+


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    BCW86 O-92F BCY56 BCY57 BCY58 BCY59 2sc 9015 2SC644 CS9015 2N4248 scr 4059 transistor MPS 6518 mpsa09 2SC923 2N3550 2SC644 transistor PDF

    RPY 86

    Abstract: valvo halbleiter RPY94 CQY 24 BV EI 30-20 3001 LDR 03 diode byx 64 600 valvo transistoren KP101A BAV99-1
    Text: Elektronik. Wir bauen die Elemente. v a i v D Halbleiterbauelemente Produktprogramm DH, April 1984 Elektronik. Wir bauen die Elemente Unser Arbeitsgebiet - besonders die Mikroelektronik - entwickelt sich immer rascher zum Motor für eine Vielzahl von Innovationen. Mit gründ­


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    2sc 9015

    Abstract: 2SC644 CS9015 9014n BC 945 transistor BC 945 2N4248 BC267 2SC828 2sc828a
    Text: BC BC BC BC BC 132 153 154 167 168 107 108 109 113 114 Z Z Z Z Z Z Z -0 -0 z Z Z Z Z Z TO-106 TO-92F TO-92B TO-92F TO-92B 901-01 90101 901-01 901-01 901-01 TO-92F TO-92B TO-92F TO-92B TO-18 TO-18 TO-18 TO-18 TO-92F TO-92B 3 3 3 3 â <b <b <b cb b M IO M tO K


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    BC107 O-106 O-92B -26UNF-2A O-48D 2sc 9015 2SC644 CS9015 9014n BC 945 transistor BC 945 2N4248 BC267 2SC828 2sc828a PDF

    HBF4727A

    Abstract: ZD 607 - triac ZD 607 - triac circuit hbf 4727a TDA3310 hbf4727 HBF4740 DTL-930 7-stage frequency divider BF479S
    Text: / h o f t f o f m A T E ^SEMICONDUCTOR “ PRODUCTS 1979/80 I NT RODUCTI ON This publication aims to provide condensed information on the vast range of standard devices currently produced by SGS-ATES. For easy consultation the products have been divided into several sections according to the main product


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