motorola 1N4148
Abstract: DSP56301 JP13 MCM54800AJ70 HC94U-27 qs3245sog DSP5603 seiko hc 1000 GRM42-6COG* murata GRM42-6CO
Text: DSP56301ADM User’s Manual Motorola, Incorporated Semiconductor Products Sector Wireless Division 6501 William Cannon Drive West Austin, TX 78735-8598 Order this document by: DSP56301ADMUM/AD Introduction This document supports the DSP56301 Application Development Module
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DSP56301ADM
DSP56301ADMUM/AD
DSP56301
DSP56301ADM)
Augat/RD1-MC6-P102-02
30-pin
TSM11501SDV
14-pin
TSM10701SDV
20-pin
motorola 1N4148
JP13
MCM54800AJ70
HC94U-27
qs3245sog
DSP5603
seiko hc 1000
GRM42-6COG* murata
GRM42-6CO
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74HCT244 SMD
Abstract: NSH-02SB-S2-TG30 bergstik MCM54800AJ70 4609X-101-103 Augat A08 smd transistor 41B toshiba c650 DSP56301 JP13
Text: Freescale Semiconductor, Inc. Freescale Semiconductor, Inc. DSP56301ADM User’s Manual Motorola, Incorporated Semiconductor Products Sector Wireless Division 6501 William Cannon Drive West Austin, TX 78735-8598 For More Information On This Product, Go to: www.freescale.com
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DSP56301ADM
DSP56301ADMUM/AD
DSP56301
DSP56301ADM)
TSM11001SDV
TSM10301SDV
E101MD1ABE
90HBW04S
E121SD1AGE
DSP56301ADMUM/AD,
74HCT244 SMD
NSH-02SB-S2-TG30
bergstik
MCM54800AJ70
4609X-101-103
Augat A08
smd transistor 41B
toshiba c650
JP13
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3225 K30
Abstract: K30 varistor VARISTOr MZ smd code 601 ZV30K0603 keko st smd IC marking code
Text: Multilayer Technology Varistor Plus ZV Series Low Voltage SMD Varistors SEI Electronics Inc. • P.O. Box 58789 • Raleigh, NC 27658-8789 • Telephone: 919 850-9500 • FAX: (919) 850-9504 Toll Free: (888) SEI-SEI-SEI • www.seielect.com • email: [email protected] • ISO 9002 / QS 9000 Registered
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Keithley s900
Abstract: n4212 Keithley 7700 N4050 3B103 3B159 N 4212 transistor N4212 RT9602 BdP 285
Text: DATE D’ORIGINE DATE ORIGINATED AUTEUR/ORIGINATOR: RT96-024 MARCH 22 1996 SEMICONDUCTOR OBJECT/SUBJECT: NUMÉRO DE RAPPORT REPORT NUMBER PAGE / SHEET 1 de/ of 80 Final Electrical Parameter Capability and Design Rule Evaluation of the 1.2 µm N-Well Single Poly Double Metal Process.
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RT96-024
enviro1995,
Keithley s900
n4212
Keithley 7700
N4050
3B103
3B159
N 4212
transistor N4212
RT9602
BdP 285
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Untitled
Abstract: No abstract text available
Text: LT3667 40V 400mA Step-Down Switching Regulator with Dual Fault Protected LDOs Description Features Triple Output Supply from a Single Input Requires Only One Inductor n I = 50 A at 12V to 5V, 3.3V and 2.5V with No Load Q IN n Buck Regulator: Low Ripple <15mVP-P Burst Mode Operation
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LT3667
400mA
15mVP-P)
200mA
250kHz
300kHz
16-Lead
QFN-38
LT3970
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Untitled
Abstract: No abstract text available
Text: LT3667 40V 400mA Step-Down Switching Regulator with Dual Fault Protected LDOs DESCRIPTION FEATURES Triple Output Supply from a Single Input Requires Only One Inductor n I = 50 A at 12V to 5V, 3.3V and 2.5V with No Load Q IN n Buck Regulator: Low Ripple <15mVP-P Burst Mode Operation
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LT3667
400mA
15mVP-P)
200mA
250kHz
300kHz
16-Lead
QFN-38
LT3970
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RAS 0510 SUN HOLD
Abstract: sun hold RAS 0510 26LS32 ic internal diagram BD 650 12VOLT SCR DIAGRAMS scr 12volt SDS S4 24V Pt 1000 sensor siemens m68302 fads host software users manual M68302FADS
Text: Microprocessors and Memory Technologies Group MC68302 Integrated Multiprotocol Processor User’s Manual Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding
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MC68302
MC68302
INDEX-11
INDEX-12
RAS 0510 SUN HOLD
sun hold RAS 0510
26LS32 ic internal diagram
BD 650
12VOLT SCR DIAGRAMS
scr 12volt
SDS S4 24V
Pt 1000 sensor siemens
m68302 fads host software users manual
M68302FADS
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BD203
Abstract: bd204 BD201 BD 203 BD 201 transistors b0203 BD 202 transistors THP1
Text: BD 201 - BD 203 Silizium-NPN-Epibasis-Leistungstransistoren Silicon NPN Epibase Power Transistors Anwendungen: NF-Endstufen Applications: AF-output stages Besondere Merkmale: Features: • Hohe Spitzenleistung • High peak power • Hohe Stromverstärkung
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BD 202 transistors
Abstract: BD 204 B Scans-0010668 BD204 BD 203
Text: BD 202 * BD 204 Silizium-PNP-Epibasis-Leistungstransistoren Silicon PNP Epibase Power Transistors Anwendungen: NF-Endstufen A p p lic a tio n s : AF-output stages Besondere Merkmale: • Hohe Spitzenleistung Features: • High peak p o w e r • Hohe S trom verstärkung
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655/1077A1
BD 202 transistors
BD 204 B
Scans-0010668
BD204
BD 203
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BD203-BD204
Abstract: BD201 RCA-BD201 17521 rca BD202 BD203 BD204 0017525 BD203 npn
Text: ÏÏÏ 38750816 E SOLID STATE Pro Electron Power Transistors DE~J 3 Ô 7 S 0 Û 1 G D 1 7 S B 1 □ 01E 17521 D^ - BD201, BD202, BD203, BD204 File Num ber
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750fll
BD201,
BD202,
BD203,
BD204
O-220AB
RCA-BD201
BD203
BD202
BD203-BD204
BD201
17521 rca
0017525
BD203 npn
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cqx 87
Abstract: germanium AEG Thyristor T 558 F TDA 2516 bu208 bf506 la 4430 BF963 TDA1086 transistor bf 175
Text: Page Contents Diodes 8 Transistors 15 Optoelectronic Devices 24 Integrated Circuits 33 1 Contents, alpha-numeric Type Page AA 112 AA113 AA117 AA 118 AA119 AA 132 AA 133 AA 134 AA 137 AA 138 12 12 8 12 12 8 8 8 12 12 BA 111 BA 121 BA 124 BA 125 BA 147/. BA 157
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AA113
AA117
AA119
BAV17
BAV18
BAV19
BAV20
BAV21
cqx 87
germanium
AEG Thyristor T 558 F
TDA 2516
bu208
bf506
la 4430
BF963
TDA1086
transistor bf 175
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transistor kt 326
Abstract: transistor KT 3107 Belcanto ST 3010 transistor BU 5027 J 5027-R atakassette SANYO CTP 4360 transistor kt 925 Transstereo 2401.00 transistor KT 816
Text: SERVICE-MITTEILUNGEN V E B IN D U S T R IE V E R T R IE B R U N D F U N K U N O F E R N S E H E N ir .f -t j | R A P io -teievlslon JUNI/JULI 1960 6/7 SKITB 1-8 Mitteilung aus dem VEB Fernsehgerätewerke Staßfurt Informationen für den Fernsehgeräteservice
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ksd 302 250v, 10a
Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
Text: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle
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CB-F36c
2SD1642
2SD2182,
2SC4489,
-08S-
ksd 302 250v, 10a
irf 5630
transistor 2SB 367
IRF 3055
AC153Y
transistor ESM 2878
TIP 43c transistor
2sk116
bf199
bd643
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4045B
Abstract: RC oscillator in inverter circuit diagram 4045 counter
Text: C O S /M O S INTEGRATED CIRCUIT ^045 B / / hcc/hcf « b COS/MOS 21-STAGE COUNTER • • • • • • • • V E R Y LOW O PERATIN G D ISS IP A T IO N 1 mW TYP. ; @ V DD= 5V, f0 = 1 MHz OUTPUT D R IV E R S WITH SINCK OR SOURCE C A P A B ILIT Y . . . . 7 mA (TYP.) @ V DD= 5V
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4045B
21-ST
4045B
RC oscillator in inverter circuit diagram
4045 counter
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HBF4727A
Abstract: ZD 607 - triac ZD 607 - triac circuit hbf 4727a TDA3310 hbf4727 HBF4740 DTL-930 7-stage frequency divider BF479S
Text: / h o f t f o f m A T E ^SEMICONDUCTOR “ PRODUCTS 1979/80 I NT RODUCTI ON This publication aims to provide condensed information on the vast range of standard devices currently produced by SGS-ATES. For easy consultation the products have been divided into several sections according to the main product
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AC125K
Abstract: 6AN7 tungsram 3S035T-1 ecc83 application notes ECL86 DG 7-123 tungsram AC125UZ PENTODE pl 508 ot-400 tungsram
Text: TUNGSRAM 1 ELECTRON TUBES AND SEMI CONDUCTORS 1979 RADIO & TV RECEIVING TUBES OSCILLOSCOPE & MONITOR TUBES TRANSMITTING TUBES, RECTIFIERS & MICROWAVE TUBES SEMICONDUCTORS RECEIVING TUBES CONSUMER TYPES INDUSTRIAL TYPES VOLTAGE REGULATORS TY P E ASSO R TM EN T
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76665N
76889N
MA748PC
MA709PC
jA710PC
A711PC
iA712PC
A723PC
HA741PC
A747PC
AC125K
6AN7
tungsram 3S035T-1
ecc83 application notes
ECL86
DG 7-123
tungsram
AC125UZ
PENTODE pl 508
ot-400 tungsram
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BD9886FV
Abstract: BD9886 INVERTER bd9886fv bd9884fv b0350 TEPSL PMP25 bd-9b MCR03 ER b0352
Text: 2008 SPRING Energy saving ! ECO Devices E x c e lle n c e in E le c tro n ic s ROHM ECO Devices Using ROHM ECO Devices saves energy and reduces CO2 generation. At ROHM we are committed to saving energy by reducing the power consumption of equipment. This starts at the component level - the basic building blocks of all circuits. ROHM, the leading
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50N5880E
BD9886FV
BD9886
INVERTER bd9886fv
bd9884fv
b0350
TEPSL
PMP25
bd-9b
MCR03 ER
b0352
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CMOS 4045
Abstract: BD 201 transistors 4045B
Text: C O S /M O S INTEGRATED CIRCUIT ^045 B / / hcc/hcf « b COS/MOS 21-STAGE COUNTER • • • • • • • • V E R Y LOW O PE R ATIN G D IS S IP A T IO N 1 mW TY P. ; @ V DD= 5V, f 0 = 1 MHz O U TPU T D R IV E R S W ITH SIN C K OR SOURCE C A P A B IL IT Y . . . . 7 m A (TYP.) @ V DD= 5V
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404SB
21-STAGE
4045B
CMOS 4045
BD 201 transistors
4045B
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Untitled
Abstract: No abstract text available
Text: C O S /M O S INTEGRATED CIRCUIT ^ o 45 B / / hcc/hcf «m5B COS/MOS 21-STAGE COUNTER • • • • • • • • V E R Y LOW O PE R ATIN G D IS S IP A T IO N 1 mW TY P. ; @ V DD= 5V, f 0 = 1 MHz O U TPU T D R IV E R S W ITH SIN C K OR SOURCE C A P A B IL IT Y . . . . 7 m A (TYP.) @ 'V DD= 5V
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21-STAGE
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742537
Abstract: ic 4045 pin diagram
Text: G S-THOnSON G7C D I 7121337 []0m7!.7 S I 'T:e/ 5 - ^ S ~ l rf 57- r f u u s/m u s IN T EG R A T ED CIRCUIT 1 S O h t HCC,HCF 4M5B i li • .4lC U8760 ü C O S /M O S 2 1 - S T A G E C O U N T E R • V E R Y LO W O P E R A T IN G D IS S IP A T IO N . . . . 1 m W T Y P . ; @ V D D = 5 V , f 0 = 1 M H z
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U8760
097152M
742537
ic 4045 pin diagram
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Untitled
Abstract: No abstract text available
Text: LM 96550 LM96550 Ultrasound Transmit Puiser Te x a s In s t r u m e n t s Literature Number: SNAS504E * /1 Texas I nstr um ents LM96550 Ultrasound Transmit Pulser General Description Features The LM96550 is an eight-channel monolithic high-voltage, high-speed pulse generator for multi-channel medical ultra
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LM96550
SNAS504E
LM96550
LM965XX
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2N2222A 338
Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK
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2CY17
2CY18
2CY19
2CY20
2CY21
500MA
500MA
2N2222A 338
TFK 949
2N1167
halbleiter index transistor
ad161
BSY19
al103
ac128
TFK 404
Tfk 931
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RCA 40636 transistor
Abstract: rca 40636 rca 2N3771 power circuit 40636 rca rca 40327 300W TRANSISTOR AUDIO AMPLIFIER 40636 220v 300w ac regulator circuit 2N3055 RCA 40327
Text: Ic to 80 A . . . P t to 300 W . . . V cE to 170 V H O M ETAXIAL-BASE N-P-N POWER TYPES le - 16 A max. •260 W max. <e “ 1.6 A max. le a 1 . S A max. lc » 3 .S A max. lc * 4 A m ax. lc a 4 A max. le • 3 A max. le “ 3 A max. le - 7 A max. lc a 1 S A max.
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ITO-391-
ITO-220)
O-661â
ITO-2201
O-2201
ITO-31
130x130
RCA 40636 transistor
rca 40636
rca 2N3771 power circuit
40636 rca
rca 40327
300W TRANSISTOR AUDIO AMPLIFIER
40636
220v 300w ac regulator circuit
2N3055 RCA
40327
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bpx28
Abstract: Germanium diode OA 182 TAA920 fy sot 143 BSV57B AC187K BPW14 BF194 AD 161 BPX34
Text: Halbleiter TELE FUN KEN Übersicht Sem iconductor survey 1972/1973 B2/V.3.20/0872 D ie s e Liste soll die W ahl g ee ig n e te r H albleiter-Typen fü r die verschiedenen A n w en du ng szw ecke e rleich te rn . Z ur besseren Ü b e rs ic h t sind nur die w e se ntlich en D aten
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