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    BD135 INPUT IMPEDANCE Search Results

    BD135 INPUT IMPEDANCE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    DCL541A01 Toshiba Electronic Devices & Storage Corporation Digital Isolator / VDD=2.25~5.5V / 150Mbps / 4 channel(F:R=3:1) / Default Output Logic: Low / Input disable Visit Toshiba Electronic Devices & Storage Corporation
    DCL541B01 Toshiba Electronic Devices & Storage Corporation Digital Isolator / VDD=2.25~5.5V / 150Mbps / 4 channel(F:R=3:1) / Default Output Logic: High / Input disable Visit Toshiba Electronic Devices & Storage Corporation
    TLX9188 Toshiba Electronic Devices & Storage Corporation Photocoupler (phototransistor output), DC input, 3750 Vrms, SO6, Automotive Visit Toshiba Electronic Devices & Storage Corporation
    TB67H480FNG Toshiba Electronic Devices & Storage Corporation Stepping Motor Driver/Unipolar Type/Vout(V)=50/Iout(A)=2.5/ PHASE input type Visit Toshiba Electronic Devices & Storage Corporation
    TB67H481FNG Toshiba Electronic Devices & Storage Corporation Stepping Motor Driver/Unipolar Type/Vout(V)=50/Iout(A)=2.5/ IN input type Visit Toshiba Electronic Devices & Storage Corporation

    BD135 INPUT IMPEDANCE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MRF6414 NPN Silicon RF Power Transistor The MRF6414 is designed for 26 volt UHF large signal, common emitter, class AB linear amplifier applications. • Specified 26 Volt, 960 MHz Characteristics Output Power = 50 Watts


    Original     		PDF MRF6414 MRF6414 DL110/D)

    Philips Application Note ECO6907

    Abstract: AN98032 BD135 CURVES ECO7703 BD136 SMD TRANSISTOR COE82101 bd136 equivalent mosfet HF amplifier AN98030 HF power amplifier blf177
    Text: Philips Semiconductors RF transmitting transistor and power amplifier fundamentals 3 Power amplifier design POWER AMPLIFIER DESIGN NOTE TO SECTION 3 3.1 Classes of operation and biasing 3.1.1 For clarity in equations, identifiers such as R1, +jB2, −jX3 in drawings are written as


    Original     		PDF

    Motorola transistor 9410

    Abstract: 91 c6 bd135 equivalent icer capacitor motorola 1N4148 TP3032 1N4148 BD135 NT 407 F TRANSISTOR
    Text: MOTOROLA Order this document by TP3032/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor TP3032 The TP3032 is designed for 26 volts, common emitter, 960 MHz base station amplifiers, for use in analog and digital systems. • Specified 26 Volts, 960 MHz Characteristics


    Original     		PDF TP3032/D TP3032 TP3032 TP3032/D* Motorola transistor 9410 91 c6 bd135 equivalent icer capacitor motorola 1N4148 1N4148 BD135 NT 407 F TRANSISTOR

    bd135 equivalent

    Abstract: TP3069 motorola rf device NF 935 bd135 input impedance transistor tp3069
    Text: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA The RF Line RF Pow er Transistor The TP3069 is designed for cellular radio base station amplifiers up to 960 MHz. It incorporates high value emitter ballast resistors, gold metallizations and offers a high degree of reliability and ruggedness. The TP3069 also features


    OCR Scan     		PDF TP3069 TP3069 bd135 equivalent motorola rf device NF 935 bd135 input impedance transistor tp3069

    bd135 equivalent

    Abstract: irt 840 1509-50 TP3062 J890 bd135 N rBE BD135 BD135 35 W 960 MHz RF POWER TRANSISTOR NPN BD135 TRANSISTOR
    Text: MOTOROLA SC XSTRS/R F b=)E D b3b7254 D1GDT0G 172 noT b MOTOROLA I SEMICONDUCTOR • ■ TECHNICAL DATA The RF Line U H F P o w er Tkransistor The TP3062 is designed for 960 MHz mobile base stations in both analog and digital applications. It incorporates high value emitter ballast resistors, gold


    OCR Scan     		PDF b3b7254 TP3062 TP3062 bd135 equivalent irt 840 1509-50 J890 bd135 N rBE BD135 BD135 35 W 960 MHz RF POWER TRANSISTOR NPN BD135 TRANSISTOR

    bd135 equivalent

    Abstract: bd135 input impedance rBE BD135 resistor 2,2
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line TP3062 UHF Power Thransistor The TP3062 is designed for 960 MHz mobile base stations in both analog and digital applications. It incorporates high value emitter ballast resistors, gold metallizations and offers a high degree of reliability and ruggedness. Including


    OCR Scan     		PDF TP3062 TP3062 bd135 equivalent bd135 input impedance rBE BD135 resistor 2,2

    40 pin J004

    Abstract: transistor bd135
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Pow er Transistor The MRF6402 is designed for 1.8 GHz Personal Communications Network PCN base stations applications. It incorporates high value emitter ballast resistors, gold metallizations and offers a high degree of reliability and


    OCR Scan     		PDF MRF6402 1N4148 BD135 40 pin J004 transistor bd135

    equivalent transistor K 2767

    Abstract: transistor K 2767 bd135 equivalent transistor bd135
    Text: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA TP3019S The RF Line UHF Power Transistor The TP3019S is designed for 24 V common emitter base station amplifiers. Operating in the 820-960 MHz bandwidth, the device has been specifically designed for use in analog and digital GSM systems.


    OCR Scan     		PDF TP3019S TP3019S equivalent transistor K 2767 transistor K 2767 bd135 equivalent transistor bd135

    si diode 1N4007

    Abstract: MRF841 MOTOROLA TRANSISTOR 935 150 watts power amplifier layout
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MRF6414 NPN Silicon RF Power Transistor The MRF6414 is designed for 26 volt UHF large signal, common emitter, class AB linear amplifier applications. • • • • 50 W, 960 MHz RF POWER TRANSISTOR NPN SILICON


    OCR Scan     		PDF MRF6414 MRF6414PHT/D MRF6414 MRF8414 si diode 1N4007 MRF841 MOTOROLA TRANSISTOR 935 150 watts power amplifier layout

    150 j47

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MRF6414 NPN Silicon RF Pow er Transistor The MRF6414 is designed for 26 volt UHF large signal, common emitter, class AB linear amplifier applications. • Specified 26 Volt, 960 MHz Characteristics Output Power = 50 Watts


    OCR Scan     		PDF MRF6414 MRF6414 VcEO970 150 j47

    transistor bd135

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TP3032 The RF Line NPN Silicon RF Power TVansistor The TP3032 is designed for 26 volts, common emitter, 960 MHz base station amplifiers, for use in analog and digital systems. • 21 W, 960 MHz RF POWER TRANSISTOR NPN SILICON


    OCR Scan     		PDF TP3032 TP3032 BD135 transistor bd135

    si diode 1N4007

    Abstract: motorola rf device MOTOROLA TRANSISTOR 935 bd135 equivalent Diode 1N4007 TP3064
    Text: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA The RF Line RF Power Transistor The TP3064 is designed for 960 MHz mobile base stations in both analog and digital applications. It incorporates high value emitter ballast resistors, gold metallizations and offers a high degree of reliability and ruggedness. The


    OCR Scan     		PDF TP3064 si diode 1N4007 motorola rf device MOTOROLA TRANSISTOR 935 bd135 equivalent Diode 1N4007

    MRF6402

    Abstract: transistor SMD J9 transistor J9 TRANSISTOR Bd135 diode 1n4148
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF6402 The RF Line NPN Silicon RF Power Transistor The MRF6402 is designed for 1.8 GHz Personal Communications Network PCN base stations applications. It incorporates high value emitter ballast resistors, gold metallizations and offers a high degree of reliability and


    OCR Scan     		PDF MRF6402 MRF6402 1N4148 BD135 transistor SMD J9 transistor J9 TRANSISTOR Bd135 diode 1n4148

    1206 transistor

    Abstract: chip resistor 1206 smd transistor p1 bd135 equivalent RF NPN POWER TRANSISTOR 3 GHZ 200 watts 22 pf trimmer capacitor transistor bd135 8 PIN SMD IC 2671 Equivalent
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power TVansistor The MRF6406 is designed for 1.88 GHz Personal Communications Network PCN base station applications. For ease of design, this transistor has an internally matched input. •


    OCR Scan     		PDF MRF6406 1206 transistor chip resistor 1206 smd transistor p1 bd135 equivalent RF NPN POWER TRANSISTOR 3 GHZ 200 watts 22 pf trimmer capacitor transistor bd135 8 PIN SMD IC 2671 Equivalent

    bd135 equivalent

    Abstract: transistor bd135 motorola 1N4148 microstrip resistor microstrip line
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line UHF Power Transistor The TP3021 is designed for 24 V com mon em itter base station amplifiers. Operating in the 8 2 0 -9 6 0 MHz bandwidth, it has been specifically designed for use in analog and digital GSM system s as a medium power output device.


    OCR Scan     		PDF TP3021 BD135 bd135 equivalent transistor bd135 motorola 1N4148 microstrip resistor microstrip line

    bd135 equivalent

    Abstract: VARIABLE capacitor
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TP3012 The RF Line UHF P o w er T ransistor The TP3012 is designed fo r 900 MHz m o b ile stations in b oth analog and d ig ita l a p p li­ cations. It in co rp o rates high value e m itte r ballast resistors, gold m e ta llizatio n s and offers


    OCR Scan     		PDF TP3012 TP3012 1N4148 bd135 equivalent VARIABLE capacitor

    transistor bd135

    Abstract: TRANSISTOR 4148 Diode 1N 4148 transistor J9
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor The MRF6402 is designed for 1.8 GHz Personal Com m unications Network PCN base stations applications. It incorporates high value em itter ballast re s is to rs , gold m e ta lliz a tio n s and o ffe rs a high de g re e of re lia b ility and


    OCR Scan     		PDF MRF6402 BD135 transistor bd135 TRANSISTOR 4148 Diode 1N 4148 transistor J9

    TP5040

    Abstract: ATC100A4R7DP50 100A120D ATC100A470JP50 ATC100A101 ATC100A470
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TP5040 The RF Line UH F P o w e r T ra n sisto r 40 W — 380 to 512 M Hz UHF POWER TRANSISTOR NPN SILICON . . . designed for 24 Volt UHF large-signal common emitter am plifier applications in industrial and commercial FM equipment operating in the 380 to 512 MHz frequency


    OCR Scan     		PDF TP5040 0A470JP50 ATC100A4R7DP50 100A5R6DP50 ATC100A150DP50 100A120DP50 ATC100A101KP50 1N4007 BD135 TP5040 100A120D ATC100A470JP50 ATC100A101 ATC100A470

    cito RF

    Abstract: No abstract text available
    Text: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA TP3040 The RF Line UHF Power Transistor 40 W — 960 MHz UHF POWER TRANSISTOR NPN SILICON T h e T P 3040 is s p e c ific a lly d e s ig n e d fo r o p e ra tio n as th e fin a l s ta g e in 960 M H z m o b ile ba s e s ta tio n a m p lifie r s . U tiliz a tio n o f e m itte r b a lla s t r e s is to rs a n d g o ld m e ta lliz a tio n


    OCR Scan     		PDF TP3040 1N4148 BD135 cito RF

    CHIP DIODE m7

    Abstract: D2-1N4148 variable capacitor 0.4 motorola 1N4148 1N4148 TP3012 motorola rf Power Transistor 21180 chip trimmer capacitor 1.7 capacitor 10 nf
    Text: MOTOROLA SC XSTRS/R F 4bE b3b7254 » 0 Q1 S 2Ü 1 fi I MOTb "P 3 3 -Û 7 ' MOTOROLA SEMICONDUCTOR TECHNICAL DATA TP3012 The RF Line U H F P o w e r T ra n s is to r T he TP3012 is d e sig n e d fo r 900 M H z m o b ile s ta tio n s in both a n a lo g a n d d ig ita l a p p li­


    OCR Scan     		PDF b3b72S4 TP3012 Contin48 T-33-07 CHIP DIODE m7 D2-1N4148 variable capacitor 0.4 motorola 1N4148 1N4148 TP3012 motorola rf Power Transistor 21180 chip trimmer capacitor 1.7 capacitor 10 nf

    transistor BD135

    Abstract: bd135 equivalent motorola rf Power Transistor 1N4148 BD135 TP3021 transistor c1
    Text: M O TOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line U H F Pow er Transistor The TP3021 is designed for 24 V common emitter base station amplifiers. Operating in the 8 2 0 -9 6 0 M H z bandwidth, it has been specifically designed for use in analog and digital G SM system s a s a medium power output device.


    OCR Scan     		PDF TP3021 TP3021 b3b72S4 01Q73M7 b3b7254 transistor BD135 bd135 equivalent motorola rf Power Transistor 1N4148 BD135 transistor c1

    transistor rf m 1104

    Abstract: MOTOROLA TRANSISTOR 935
    Text: MOTOROLA Order this document by MRF6414/D SEMICONDUCTOR TECHNICAL DATA The RF Line MRF6414 NPN Silicon RF Power Transistor The MRF6414 is designed for 26 volt UHF large signal, common emitter, class AB linear amplifier applications. • Specified 26 Volt, 960 MHz Characteristics


    OCR Scan     		PDF MRF6414/D MRF6414 MRF6414PHT/D MRF6414 2PHX34665Q-0 transistor rf m 1104 MOTOROLA TRANSISTOR 935

    transistor fn 155

    Abstract: motorola rf device transistors equivalent 0912
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub-Micron Bipolar Line MRF15060 MRF15060S RF Power Bipolar Transistors Designed for broadband commercial and industrial applications at frequen­ cies from 1400 to 1600 MHz. The high gain and broadband performance of


    OCR Scan     		PDF IS22I MRF15060 MRF15060S transistor fn 155 motorola rf device transistors equivalent 0912

    SU 179 transistor

    Abstract: transistors equivalent 0912 bd135 equivalent IrL 1540 N 1000 watts class d amplifier schematic bd136 equivalent IrL 1540 g RF NPN POWER TRANSISTOR 3 GHZ 200 watts
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub-Micron Bipolar Line M RF15060 M RF15060S RF Pow er Bipolar Transistors Designed for broadband commercial and industrial applications at frequen­ cies from 1400 to 1600 MHz. The high gain and broadband performance of


    OCR Scan     		PDF IS12I IS22I MRF15060 MRF15060S SU 179 transistor transistors equivalent 0912 bd135 equivalent IrL 1540 N 1000 watts class d amplifier schematic bd136 equivalent IrL 1540 g RF NPN POWER TRANSISTOR 3 GHZ 200 watts