R505
Abstract: BDS300
Text: Thick Film Power Resistors Type BDS300 Series Type BDS300 Series Characteristics Electrical Resistance Values: Resistance Tolerance: Temperature Coefficient: Power Rating: Capacitance / Mass: Capacitance / Parallel: Inductance: Maximum Working Voltage: Insulation Voltage:
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BDS300
1000m)
R505
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Untitled
Abstract: No abstract text available
Text: C orporate Hom e | Electronic Components | Se gm e nts | W ho W e Are My Account Searc h Products Documentation Resources My Account Customer Support Home > Products > By Type > Resistors > Product Feature Selector > Product Details BDS2A30010RK Product Details
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BDS2A30010RK
BDS2A30010RK
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MJE200
Abstract: MJE210 JE230
Text: MJE200, MJE210 continued ELECTRICAL CH ARACTERISTICS ( T q * 2 5 ° C u nless o th erw ise n oted) C ha rac teristic Sym bol O F F C H A R A C T E R IS T IC S C olle cto r*?:m itter S u s t a in in g V o lt a g e U ) (I q - 10 m A d c , I b = 0) v C E O is u s )
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MJE200,
MJE210
MJE200
MJE210
JE230
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1N5160
Abstract: MAX 6438 GEO SEMICONDUCTORS 2N6058 transistor bf 175 2N3902 2N5696 1N5788 Germanium itt
Text: DEVICE INDEX Devices characterized in Volume II show the page reference only. Devices characterized in Volume I are referenced by volume and page number. DEVICE 1N5000 1N5001 1N5002 1N5003 1 N 5 1 3 9 .A 1 N 5 1 4 0 .A 1 N 5 1 4 1 .A 1 N 5 1 4 2 .A 1 N 5 1 4 3 .A
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1N5000
1N5001
1N5002
1N5003
1N5149
1N5150
1N5153
1N5155
1N5158
1N5159
1N5160
MAX 6438 GEO SEMICONDUCTORS
2N6058
transistor bf 175
2N3902
2N5696
1N5788
Germanium itt
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