Untitled
Abstract: No abstract text available
Text: BDS950 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)60 V(BR)CBO (V)60 I(C) Max. (A)3.0 Absolute Max. Power Diss. (W)8.0 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)50u @V(CBO) (V) (Test Condition)60 V(CE)sat Max. (V)1.0 @I(C) (A) (Test Condition)2.0
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BDS950
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Untitled
Abstract: No abstract text available
Text: Philips Components D a ta sh eet status Product specification d a te o f issue April 1991 BDS950/952/954/956 PNP silicon epitaxial base power transistors DESCRIPTION PINNING - SOT223 PNP silicon epitaxial base transistors in a miniature SMD envelope SOT223 intended for general
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BDS950/952/954/956
OT223
OT223)
BDS949/9517953/955.
DS950/952/954/956
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C3317
Abstract: S95 SMD 1S91 BDS950 BDS952 BDS954 BDS956
Text: PHILIPS INTERNATIONAL SbE D • 7110fl2b D O M B n b 7TS « P H I N Philips Components Data sheet status Product specification date of issue April 1991 BDS950/952/954/956 P » - '7 PNP Silicon epitaxial base power transistors D ESCRIPTIO N PINNING - SOT223
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OT223)
BDS949/951/953/955,
7110fl2b
BDS950/952/954/956
OT223
BDS950
BDS952
BDS954
BDS956
C3317
S95 SMD
1S91
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Untitled
Abstract: No abstract text available
Text: Philips Com ponents BDS950/952/954/956 Datasheet status Product specification PNP silicon epitaxial base power transistors date of Issue April 1991 PINNING - SOT223 D ESCRIPTIO N PIN PN P silicon epitaxial base transistors in a m iniature S M D envelope SOT223 intended for general
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BDS950/952/954/956
OT223
OT223)
BDS949/951/953/955.
BDS950
BDS952
BDS954
BDS956
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S95 SMD
Abstract: s954 s95A BDS950 BDS952 BDS954 BDS956 BDS95S 1S91
Text: Philips Components Datasheet status Product specification date of Issue April 1991 BDS950/952/954/956 PNP silicon epitaxial base power transistors PINNING - SOT223 DESCRIPTION DESCRIPTION base collector em itter collector PIN 1 2 3 4 PNP silicon epitaxial base transistors
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BDS950/952/954/956
OT223)
BDS949/951/953/955.
OT223
BDS950
BDS952
BDS954
BDS956
S95 SMD
s954
s95A
BDS95S
1S91
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Untitled
Abstract: No abstract text available
Text: Philips Components D a tasheet status Product specification date of issue Apr* 1991 BDS949/951/953/9S5 NPN silicon epitaxial base power transistors PINNING -SO T223 DESCRIPTION NPN silicon epitaxial base transistors in a miniature SMD envelope S0T223 intended for general
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BDS949/951/953/9S5
S0T223)
BDS950/952/954/956.
BDS949
BDS951
BDS953
BDS955
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Untitled
Abstract: No abstract text available
Text: Philips Components Data sheet status P r o d u c t s p e c ific a tio n date of issue A p ril 1 9 9 1 BDS949/9517953/955 NPN silicon epitaxial base power transistors DESCRIPTION PINNING - SOT223 NPN silicon epitaxial base transistors in a miniature SMD envelope
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BDS949/9517953/955
OT223
OT223)
BDS950/952/954/956.
BDS949/951/953/955
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W1P 59 transistor
Abstract: W1p 48 TRANSISTOR transistor w1P 83 ICM AP 1703 transistor SMD marked RNW transistor BD139 PH 71 W1P 66 transistor transistor w1P 91 Pnp transistor smd ba rn w1p npn
Text: Philips S em iconductors S urface m oun ted sem ico n d u cto rs C on ten ts PART A page SELECTION GUIDE General purpose transistors 4 High frequency transistors 8 Broadband transistors 8 Switching transistors 10 Power transistors for switching 12 Low-noise transistors
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197/197X
S310N
W1P 59 transistor
W1p 48 TRANSISTOR
transistor w1P 83
ICM AP 1703
transistor SMD marked RNW
transistor BD139 PH 71
W1P 66 transistor
transistor w1P 91
Pnp transistor smd ba rn
w1p npn
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npn smd 2a
Abstract: smd 27E S0T223 T79 SMD BDS949 BDS951 BDS953 BDS955 IEC134 S0T-223
Text: BDS949/951/953/9S5 Datasheet statu* Product specification date of issue April 1991 NPN silicon epitaxial base power transistors PINNING-SOT223 DESCRIPTION DESCRIPTION base collector emitter collector PIN 1 2 3 4 NPN silicon epitaxial base transistors in a miniature SMD envelope
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BDS949/951/953/9S5
S0T223)
BDS950/952/954/956.
PINNING-SOT223
BDS949
BDS951
BDS953
BDS955
npn smd 2a
smd 27E
S0T223
T79 SMD
IEC134
S0T-223
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BGY41
Abstract: BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc
Text: SMALL-SIGNAL FIELD-EFFECT TRANSISTORS page Selection guide N-channel junction field-effect transistors general purpose. for differential am plifiers.
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LCD01
BGY41
BFW10 FET transistor
CQY58
germanium
RX101
equivalent components FET BFW10
bd643
bf199
283 to92 600a transistor
zener phc
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SMD ic 431c
Abstract: J 3305 431c BDS949 BDS951 BDS953 BDS955 IEC134 PINNING-SOT223
Text: PHILIPS INTERNATIONAL SbE P h ilip s C o m p o n e n ts Product specification date of Issue April 1991 • 7110ÔSb 0D431ÔÔ BDS949/951/953/955 Data sheet status D PIN 1 2 3 4 Q U IC K R E F E R E N C E DATA PARAM ETER collector-base voltage CONDITIONS open emitter
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711002b
BDS949/951/953/955
OT223)
BDS950/952/954/956.
PINNING-SOT223
BDS949
BDS951
BDS953
BDS955
SMD ic 431c
J 3305
431c
IEC134
PINNING-SOT223
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BFG55A
Abstract: philips discrete a440 IC05 philips a1211 lg SMD MARKING CODE ALg BST60
Text: Philips Semiconductors Surface mounted semiconductors Contents page PART A SELECTION GUIDE General purpose transistors 4 High frequency transistors 8 Broadband transistors 8 Switching transistors 10 Power transistors for switching 12 Low-noise transistors
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LCD01
BFG55A
philips discrete a440
IC05 philips
a1211 lg
SMD MARKING CODE ALg
BST60
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T79 SMD
Abstract: BDS949 BDS951 BDS953 BDS955 951 pnp sot223 t7 sot223
Text: Datasheet statu* Product specification date of issue April 1991 B D S 949/ 951/953/9S5 NPN silicon epitaxial base power transistors PINNING - SOT223 DESCRIPTION DESCRIPTION PIN 1 2 3 4 NPN silicon epitaxial base transistors in a m iniature SMD envelope SOT223 intended for general
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BDS949/951/953/9S5
OT223)
BDS950/952/954/956.
OT223
BDS949
BDS951
BDS953
BDS955
T79 SMD
951 pnp sot223
t7 sot223
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