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    TT Electronics Power and Hybrid / Semelab Limited BDT65CX

    Transistor, Darlington, Npn, 115V, 12A, To-220; Transistor Polarity:Npn; No. Of Pins:3Pins; Transistor Mounting:Through Hole; Operating Temperature Max:150°C; Product Range:-; Qualification:-; Collector Emitter Voltage Max:120V Rohs Compliant: Yes |Tt Electronics/semelab BDT65CX
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark BDT65CX Bulk 1
    • 1 $5.87
    • 10 $5.29
    • 100 $4.2
    • 1000 $3.4
    • 10000 $3.4
    		Buy Now

    Others BDT65C

    Part Number Only
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components BDT65C 10
    • 1 $2.66
    • 10 $1.995
    • 100 $1.995
    • 1000 $1.995
    • 10000 $1.995
    		Buy Now

    Philips Semiconductors BDT65B

    TRANSISTOR,BJT,DARLINGTON,NPN,100V V(BR)CEO,12A I(C),TO-220AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components BDT65B 3
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now

    BDT65 Datasheets (49)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BDT65 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
    BDT65 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    BDT65 Unknown Silicon NPN-Darlington Transistor and Diode Scan PDF
    BDT65 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BDT65 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    BDT65 Philips Semiconductors Silicon Darlington Power Transistors Scan PDF
    BDT65 Philips Semiconductors SILICON DARLINGTON POWER TRANSISTORS Scan PDF
    BDT65 Philips Semiconductors Silicon Darlington Power Transistors Scan PDF
    BDT65 Philips Semiconductors Silicon Darlington Power Transistors Scan PDF
    BDT65A Philips Semiconductors Silicon Darlington Power Transistor Original PDF
    BDT65A Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
    BDT65A Unknown Shortform Transistor PDF Datasheet Short Form PDF
    BDT65A Unknown SILICON DARLINGTON POWER TRANSISTORS Scan PDF
    BDT65A Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BDT65A Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    BDT65A Philips Semiconductors SILICON DARLINGTON POWER TRANSISTORS Scan PDF
    BDT65A Philips Semiconductors Silicon Darlington Power Transistors Scan PDF
    BDT65AF Philips Semiconductors Silicon Darlington Power Transistor Original PDF
    BDT65AF Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BDT65AF Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF

    BDT65 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    BDT64C

    Abstract: BDT65C diode 220c bdt65 NPN POWER DARLINGTON TRANSISTORS
    Text: SavantIC Semiconductor Product Specification BDT65C Silicon NPN Power Transistors DESCRIPTION •With TO-220C package ·High DC Current Gain ·DARLINGTON ·Complement to type BDT64C APPLICATIONS ·For audio output stages and general purpose amplifier and switching


    Original     		BDT65C O-220C BDT64C BDT64C BDT65C diode 220c bdt65 NPN POWER DARLINGTON TRANSISTORS PDF

    Untitled

    Abstract: No abstract text available
    Text: QS.IS.E.IJ ^s.m.l-C.oruL.ckoi ZPtoductd, tfne. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 378-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. BDT65; 65A BDT65B; 65C SILICON DARLINGTON POWER TRANSISTORS NPN epitaxial base transistors in monolithic Darlington circuit for audio output stages and general


    Original     		BDT65; BDT65B; O-220 BDT64; BDT64A; BDT64B BDT64C. BDT65 USA060 PDF

    k2645

    Abstract: k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417
    Text: 1 BHIAB Electronics Du som söker besvärliga IC & transistorer, börja Ditt sökande hos oss – vi har fler typer på lager än man rimlingen kan begära av ett företag Denna utgåva visar lagerartiklar men tyvärr saknas priser och viss information Men uppdatering sker kontinuerligt


    Original     		MK135 MK136 MK137 MK138 MK139 MK140 Mk142 MK145 MK155 157kr k2645 k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417 PDF

    BUV48I

    Abstract: BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046
    Text: BIPOLAR TRANSISTOR INTRODUCTION TO BIPOLAR CROSS REFERENCE In order to improve our overall service, SGS-THOMSON has introduced a system of preferred transistor sales types. The following cross-reference is intended as a guide to identify sales types that may be suitable


    Original     		2N3016 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3055 2N3076 2N3171 BUV48I BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046 PDF

    STK411-230E

    Abstract: STK411-220E stk442-130 UPC2581V PAL005A FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
    Text: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for


    Original     		STVDST-01 CAT22 STK411-230E STK411-220E stk442-130 UPC2581V PAL005A FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D PDF

    2N5657 equivalent

    Abstract: 2SA1046 BU326 BU108 BU100 2SC2331 Y tip47 419 2N3792 application notes
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5655 2N5656 2N5657 Plastic NPN Silicon High-Voltage Power Transistor . . . designed for use in line–operated equipment such as audio output amplifiers; low–current, high–voltage converters; and AC line relays.


    Original     		2N5655 2N5656 2N5657 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B 2N5657 equivalent 2SA1046 BU326 BU108 BU100 2SC2331 Y tip47 419 2N3792 application notes PDF

    MJE494

    Abstract: 2SC1419 BD 804 2SD675 MJE104 BD581 BD135 CURVES MJ1000 DTS-4041 2N5037
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD157 BD158 BD159 Plastic Medium Power NPN Silicon Transistor . . . designed for power output stages for television, radio, phonograph and other consumer product applications. 0.5 AMPERE POWER TRANSISTORS NPN SILICON 250 – 300 – 350 VOLTS


    Original     		BD157 BD158 BD159 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B MJE494 2SC1419 BD 804 2SD675 MJE104 BD581 BD135 CURVES MJ1000 DTS-4041 2N5037 PDF

    2SD669 equivalent

    Abstract: BD801 BDY29 equivalent BU108 2SC2080 2SD436 2N6021 BD345 tip122 D-PAK package 2SD544
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6609 See 2N3773 Darlington Silicon Power Transistors 2N6667 2N6668 . . . designed for general–purpose amplifier and low speed switching applications. • High DC Current Gain — hFE = 3500 (Typ) @ IC = 4 Adc • Collector–Emitter Sustaining Voltage — @ 200 mAdc


    Original     		2N6609 2N3773) 2N6667 2N6668 220AB 2N6387, 2N6388 2SD669 equivalent BD801 BDY29 equivalent BU108 2SC2080 2SD436 2N6021 BD345 tip122 D-PAK package 2SD544 PDF

    2SC495

    Abstract: NSP41A BU108 transistor BD614 MOTOROLA 2SA663 BD4122 BD661 MJ1000 NSP2100 D45VH4 similar
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJF6107 Power Transistor For Isolated Package Applications PNP SILICON POWER TRANSISTOR 7 AMPERES 70 VOLTS 34 WATTS Designed for general–purpose amplifier and switching applications, where the mounting surface of the device is required to be electrically isolated from the heatsink


    Original     		MJF6107 2N6107 E69369, TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B 2SC495 NSP41A BU108 transistor BD614 MOTOROLA 2SA663 BD4122 BD661 MJ1000 NSP2100 D45VH4 similar PDF

    "Tektronix 475"

    Abstract: equivalent 2n6488 TIP42C EQUIVALENT BU108 motorola darlington power transistor motorola 266 TO-204AA transistor D45H11 equivalent replacement pnp bux TRANSISTOR REPLACEMENT table for transistor tip3055 equivalent
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUX48 BUX48A SWITCHMODE II Series NPN Silicon Power Transistors 15 AMPERES NPN SILICON POWER TRANSISTORS 400 AND 450 VOLTS V BR CEO 850 – 1000 VOLTS V(BR)CEX 175 WATTS The BUX 48/BUX 48A transistors are designed for high–voltage, high–speed,


    Original     		48/BUX BUX48 BUX48A AMPERE32 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A "Tektronix 475" equivalent 2n6488 TIP42C EQUIVALENT BU108 motorola darlington power transistor motorola 266 TO-204AA transistor D45H11 equivalent replacement pnp bux TRANSISTOR REPLACEMENT table for transistor tip3055 equivalent PDF

    D42C5

    Abstract: transistor bc 647 2N5302 EB pin out TRANSISTOR tip2955 bs170 replacement 2sc141 BU108 bc 658 Motorola transistors MJE3055 TO 127 MC7812 TO-220
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  Data Sheet SCANSWITCH Designer's MJE16204 NPN Bipolar Power Deflection Transistor For High and Very High Resolution Monitors The MJE16204 is a state–of–the–art SWITCHMODE bipolar power transistor. It is


    Original     		MJE16204 MJE16204 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C D42C5 transistor bc 647 2N5302 EB pin out TRANSISTOR tip2955 bs170 replacement 2sc141 BU108 bc 658 Motorola transistors MJE3055 TO 127 MC7812 TO-220 PDF

    Untitled

    Abstract: No abstract text available
    Text: BDT65F; BDT65AF BDT65BF; BDT65CF PHILIPS INTERNATIONAL SbE 7110flSb 00435^0 4Sci M P H I N T ~ 33 SILICON DARLINGTON POWER TRANSISTORS N PN silicon darlington power transistors in a S O T 1 8 6 envelope with an electrically insulated mounting base. The devices are designed for audio output stages and general amplifier and switching applications.


    OCR Scan     		BDT65F; BDT65AF BDT65BF; BDT65CF 7110flSb BDT65F PDF

    T3D DIODE

    Abstract: T3D 77 T3D 65 diode Diode T3D 54 T3D 54 DIODE T3D 77 diode T3D 01 DIODE Diode T3D 57 BDT65 BDT64C
    Text: BDT65; 65A BDT65B; 65C V PHILIPS INTERNATIONAL SLE ]> • 71ÌG02L 00432^0 Ibfl M P H I N SILICON DARLINGTON POWER TRANSISTORS N P N e p itax ial base transistors in m o n o lith ic D arlin g to n c irc u it fo r au d io o u tp u t stages and general purpose a m p lifie r and sw itching ap plication s. T 0 - 2 2 0 pla stic envelope. P N P com p lem ents are


    OCR Scan     		BDT65; BDT65B; T0-220 BDT64; BDT64A; BDT64B BDT64C. BDT65 7z82329 T3D DIODE T3D 77 T3D 65 diode Diode T3D 54 T3D 54 DIODE T3D 77 diode T3D 01 DIODE Diode T3D 57 BDT64C PDF

    BDT65

    Abstract: bdt65c bdt64
    Text: BDT64;- 64A BDT64B; 64C PHILIPS INTERNATIONAL SbE D • 711002b 0043274 T1S MPHIN T -1 3 '7 / SILICON DARLINGTON POWER TRANSISTORS PNP epitaxial base transistors in monolithic Darlington circuit for audio output stages and general purpose amplifier and switching applications. T0-220 plastic envelope. NPN complements are BDT65,


    OCR Scan     		BDT64 BDT64B; 711002b T0-220 BDT65, BDT65A, BDT65B BDT65C. 711D62b BDT65 bdt65c PDF

    BOT65C

    Abstract: 65AF BDT64AF BDT64BF BDT64CF BDT64F BDT65AF BDT65BF BDT65CF BDT65F
    Text: BDT65F; BDT65AF bDT65BF; BDT65CF J SILICON DARLINGTON POWER TRANSISTORS NPIM silicon darlington power transistors in a SOT 186 envelope w ith an electrically insulated mounting base. The devices are designed fo r audio o u tp u t stages and general am plifier and switching applications.


    OCR Scan     		BDT65F; BDT65AF BDT65BF; BDT65CF BDT64F, BDT64AF, BDT64BF BDT64CF. BDT65F OT186. BOT65C 65AF BDT64AF BDT64CF BDT64F BDT65AF BDT65BF BDT65CF PDF

    BDT65

    Abstract: bot65a BDT64 BDT64A BDT64B BDT64C BDT65B 5A pnp to 220
    Text: J BDT65; 65A BDT65B; 65C ^ SILICON DARLINGTON POWER TRANSISTORS NPN epitaxial base transistors in m onolithic Darlington circuit fo r audio output stages and general purpose am plifier and switching applications. T 0-22 0 plastic envelope. PNP complements are


    OCR Scan     		BDT65; BDT65B; T0-220 BDT64; BDT64A; BDT64B BDT64C. BDT65 T0-220. 7Z82329 bot65a BDT64 BDT64A BDT64C BDT65B 5A pnp to 220 PDF

    BDT65

    Abstract: BDT64A BDT64C lg system ic BDT64 BDT64B BDT65B VC80 con1
    Text: MAGNA BDT65; 65A BDT65B; 65C SILICON DARLINGTON POWER TRANSISTORS N-P-N epitaxial base transistors in monolithic Darlington circuit for audio output stages and general purpose amplifier and switching applications. TO-220 plastic envelope. P-N-P complements are


    OCR Scan     		BDT65; BDT65B; T0-220 BDT64; BDT64A; BDT64B BDT64C. BDT65 BDT64A BDT64C lg system ic BDT64 BDT65B VC80 con1 PDF

    Untitled

    Abstract: No abstract text available
    Text: BDT65; 65A BDT65B; 65C _ y v SILICON DARLINGTON POWER TRANSISTORS NPN epitaxial base transistors in m onolithic Darlington circuit for audio output stages and general purpose am plifier and switching applications. TO-220 plastic envelope. PNP complements are


    OCR Scan     		BDT65; BDT65B; O-220 BDT64; BDT65 bbS3T31 PDF

    Untitled

    Abstract: No abstract text available
    Text: BDT64; 64A BDT64B; 64C _ / V SILICON DARLINGTON POWER TRANSISTORS PNP epitaxial base transistors in monolithic Darlington circuit for audio output stages and general purpose amplifier and switching applications. TO-220 plastic envelope. NPN complements are BDT65,


    OCR Scan     		BDT64; BDT64B; O-220 BDT65, BDT65A, BDT65B BDT65C. BDT64 bbS3T31 PDF

    BDT65

    Abstract: IOM10 BDT64 BDT64A BDT64B BDT64C BDT65B TRANSISTORE MSA-06
    Text: J BDT65; 65A BDT65B; 65C SILICON DARLINGTON POWER TRANSISTORS NPN epitaxial base transistors in monolithic Darlington circuit for audio output stages and general purpose amplifier and switching applications. TO-220 plastic envelope. PNP complements are BDT64; BDT64A; BDT64B and BDT64C.


    OCR Scan     		BDT65; BDT65B; O-220 BDT64; BDT64A; BDT64B BDT64C. BDT65 T0-220. 7z82329 IOM10 BDT64 BDT64A BDT64C BDT65B TRANSISTORE MSA-06 PDF

    BDT64

    Abstract: BDT65B BDT65A BDT648 1S79 BDT64C CC1R4 BDT64A BDT65
    Text: SNÒ - fclO BDT65; 65A BDT65B; 65C SILICON DARLINGTON POWER TRANSISTORS N-P-N epitaxial base transistors in m o n o lith ic Darlington circu it fo r audio o u tp u t stages and general purpose am plifier and switching applications. TO-220 plastic envelope. P-N-P complements are


    OCR Scan     		BDT65; BDT65B; O-220 BDT64; BDT64A; BDT648 BDT64C. BDT64 BDT65B BDT65A 1S79 BDT64C CC1R4 BDT64A BDT65 PDF

    BDT65CF

    Abstract: BDT65AF 65AF BDT64AF BDT64BF BDT64CF BDT64F BDT65BF BDT65F BDT65C
    Text: BDT65F; BDT65AF ^^BDT65BF; BDT65CF PHILIPS INTERNATIONAL SbìT] I 7110ä 2b 00432^0 M S ’ì I I P H I N T - 3 3 ~z°l SILICON DARLINGTON POWER TRANSISTORS N PN silicon darlington power transistors in a S O T 1 8 6 envelope with an electrically insulated mounting


    OCR Scan     		BDT65F; BDT65AF BDT65BF; BDT65CF aSOT186 BDT64F, BDT64AF, BDT64BF BDT64CF. BDT65F BDT65CF BDT65AF 65AF BDT64AF BDT64CF BDT64F BDT65BF BDT65C PDF

    Untitled

    Abstract: No abstract text available
    Text: J BDT65F; BDT65AF ^BDT65BF; BDT65CF SILICON DARLINGTON POWER TRANSISTORS NPN silicon darlington power transistors in a SOT186 envelope with an electrically insulated mounting base. The devices are designed for audio output stages and general amplifier and switching applications.


    OCR Scan     		BDT65F; BDT65AF BDT65BF; BDT65CF OT186 BDT64F, BDT64AF, BDT64BF BDT64CF. bbS3T31 PDF

    BDT64C

    Abstract: BDT65 BDT65A BDT64A BDT64 7Z66 BDT64B BDT65B BDT65C
    Text: n o n - BDT64; 64A BDT64B; 64C SILICON DARLINGTON POWER TRANSISTORS P-N-P epitaxial base transistors in m o n o lith ic Darlington c irc u it fo r audio o u tp u t stages and general purpose a m p lifie r and switching applications. TO-22C plastic envelope. N-P-N complements are BDT65,


    OCR Scan     		BDT64; BDT64B; T0-220 BDT65, BDT65A, BDT65B BDT65C. BDT64 BDT64F BDT64AF BDT64C BDT65 BDT65A BDT64A 7Z66 BDT64B BDT65C PDF