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    D150*h02l

    Abstract: D150N d150nh02 STD150 STD150NH02L-1 DPAK 0181G D150Nh02l
    Text: STD150NH02L-1 STD150NH02L N-channel 24V - 0.003Ω - 150A - ClipPAK - IPAK STripFET™ IlI Power MOSFET General features Type VDSSS RDS on ID STD150NH02L STD150NH02L-1 24V 24V <0.0035Ω <0.0035Ω 150A 150A ) s ( t 3 3 1 • RDS(on) * Qg industry’s benchmark


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    PDF STD150NH02L-1 STD150NH02L STD150NH02L STD150NH02L-1 D150*h02l D150N d150nh02 STD150 STD150NH02L-1 DPAK 0181G D150Nh02l

    IEC60721-3-3

    Abstract: L4936E IEC60721 Storage of Products Supplied by Infineon Technologies IDC08S120E Infineon Automotive Technology
    Text: IDC08S120E 1200V thinQ!TM SiC Schottky Diode A Features: Applications: •         Revolutionary Semiconductor Material Silicon Carbide Switching Behaviour Benchmark No Reverse Recovery / No Forward Recovery Temperature Independent Switching


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    PDF IDC08S120E L4936E, IEC60721-3-3 L4936E IEC60721 Storage of Products Supplied by Infineon Technologies IDC08S120E Infineon Automotive Technology

    Storage of Products Supplied by Infineon Technologies

    Abstract: IEC60721-3-3 IEC60721 L4926E
    Text: IDC73D120T6H 1200V thinQ!TM SiC Schottky Diode A Features: Applications: •         Revolutionary Semiconductor Material Silicon Carbide Switching Behaviour Benchmark No Reverse Recovery / No Forward Recovery Temperature Independent Switching


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    PDF IDC73D120T6H IDC05S120E L4926E, Storage of Products Supplied by Infineon Technologies IEC60721-3-3 IEC60721 L4926E

    ROADM JDSU

    Abstract: ROADM Polatis FC/SC PATCH CORD SINGLE MODE ooo switch rs232 protocol Transistor 5503 EIA-526-14A
    Text: Optical Switch Tray OST Optical Switch Tray The Polatis OST family of products set the industry benchmark for performance in a compact, fully non-blocking optical switch. The OST is an ideal platform for network-level switching, given its ultra-low loss, fast switch speed, and high reliability


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    PDF PROD-402-04-0-S ROADM JDSU ROADM Polatis FC/SC PATCH CORD SINGLE MODE ooo switch rs232 protocol Transistor 5503 EIA-526-14A

    Untitled

    Abstract: No abstract text available
    Text: VS-8ETX06PbF, VS-8ETX06-N3, VS-8ETX06FPPbF, VS-8ETX06FP-N3 www.vishay.com Vishay Semiconductors Hyperfast Rectifier, 8 A FRED Pt FEATURES • Hyperfast recovery time • Benchmark ultralow forward voltage drop • 175 °C operating junction temperature TO-220 FULL-PAK


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    PDF VS-8ETX06PbF, VS-8ETX06-N3, VS-8ETX06FPPbF, VS-8ETX06FP-N3 O-220AC O-220 E78996 2002/95/EC JEDEC-JESD47 VS-8ETX06PbF

    15ETX06-1

    Abstract: 15ETX06S IRFP250
    Text: VS-15ETX06SPbF, VS-15ETX06-1PbF Vishay High Power Products Hyperfast Rectifier, 15 A FRED Pt FEATURES • Benchmark ultralow forward voltage drop VS-15ETX06-1PbF VS-15ETX06SPbF • Hyperfast recovery time • Low leakage current • 175 °C operating junction temperature


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    PDF VS-15ETX06SPbF, VS-15ETX06-1PbF VS-15ETX06SPbF J-STD-020, 2002/95/EC AEC-Q101 11-Mar-11 15ETX06-1 15ETX06S IRFP250

    STU16NC50

    Abstract: No abstract text available
    Text: STU16NC50 N-CHANNEL 500V - 0.22Ω - 16A Max220 PowerMesh II MOSFET TYPE STU16NC50 • ■ ■ ■ ■ VDSS RDS on ID 500V < 0.27Ω 16 A TYPICAL RDS(on) = 0.22Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED


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    PDF STU16NC50 Max220 STU16NC50

    DSA00105971

    Abstract: STP3NC50
    Text: STP3NC50 N-CHANNEL 500V - 3Ω - 2.8A TO-220 PowerMesh II MOSFET • ■ ■ ■ ■ TYPE VDSS RDS on ID STP3NC50 500 V <4Ω 2.8 A TYPICAL RDS(on) = 3 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED


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    PDF STP3NC50 O-220 DSA00105971 STP3NC50

    Untitled

    Abstract: No abstract text available
    Text: STL13DP10F6 Dual P-channel 100 V, 0.136 Ω typ., 3.3 A STripFET VI DeepGATE™ Power MOSFET in a PowerFLAT™ 5x6 double island Datasheet - production data Features 1 4 1 Order code VDS RDS on max. ID STL13DP10F6 100 V 0.18 Ω 3.3 A • RDS(on) * Qg industry benchmark


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    PDF STL13DP10F6 DocID023936

    IEC60721-3-3

    Abstract: Storage of Products Supplied by Infineon Technologies sic wafer 100 mm bare die schottky diode IDT05S60
    Text: IDC05S60CE 2nd generation thinQ!TM SiC Schottky Diode A Features: Applications: •      Revolutionary Semiconductor Material Silicon Carbide Switching Behaviour Benchmark No Reverse Recovery / No Forward Recovery Temperature Independent Switching


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    PDF IDC05S60CE L4724E, IEC60721-3-3 Storage of Products Supplied by Infineon Technologies sic wafer 100 mm bare die schottky diode IDT05S60

    LMC6041

    Abstract: LMC6001 LMC6001AIH LMC6001AIN LMC6001BIH LMC6001BIN LMC6001CIN LM4040D1Z-2 ph probe amplifier LM6001
    Text: LMC6001 Ultra Ultra-Low Input Current Amplifier General Description Featuring 100% tested input currents of 25 fA max., low operating power, and ESD protection of 2000V, the LMC6001 achieves a new industry benchmark for low input current operational amplifiers. By tightly controlling the molding compound, National is able to offer this ultra-low input current in


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    PDF LMC6001 LMC6001A LMC6001 LMC6041 LMC6001AIH LMC6001AIN LMC6001BIH LMC6001BIN LMC6001CIN LM4040D1Z-2 ph probe amplifier LM6001

    STS11N3LLH5

    Abstract: 001411A
    Text: STS11N3LLH5 N-channel 30 V, 0.012 Ω, 11 A, SO-8 STripFET V Power MOSFET Features Type VDSS RDS on max ID STS11N3LLH5 30 V < 0.014 Ω 11 A (1) 1. The value is rated according Rthj-pcb • RDS(on) * Qg industry benchmark ■ Extremely low on-resistance RDS(on)


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    PDF STS11N3LLH5 STS11N3LLH5 001411A

    FTN035N60

    Abstract: No abstract text available
    Text: FTN035N60 600V, N-Channel MOSFET General Features BVDSS RDS ON (Max.) ID 600V 13.5 Ω 0.35A eet • Extremely high dv/dt capability • Low Gate Charge • ESD improved capability • 100% avalanche tested • New high voltage Benchmark aSh Applications:


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    PDF FTN035N60 FTN035N60

    Untitled

    Abstract: No abstract text available
    Text: STL9N3LLH5 N-channel 30 V, 0.015 Ω, 9 A, PowerFLAT 3.3x3.3 STripFET™ V Power MOSFET Features Type VDSS RDS(on) max ID STL9N3LLH5 30 V < 0.019 Ω 9 A (1) 1. The value is rated according Rthj-pcb • RDS(on) * Qg industry benchmark ■ Extremely low on-resistance RDS(on)


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    P008B DIODE

    Abstract: STN1HNC60
    Text: STN1HNC60 N-CHANNEL 600V - 7Ω - 0.4A - SOT-223 PowerMesh II MOSFET TYPE STN1HNC60 • ■ ■ ■ ■ VDSS RDS on ID 600 V <8Ω 0.4 A TYPICAL RDS(on) = 7Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED


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    PDF STN1HNC60 OT-223 P008B DIODE STN1HNC60

    STW12NC60

    Abstract: diode F4 6A
    Text: STW12NC60 N-CHANNEL 600V - 0.48Ω - 12A TO-247 PowerMesh II MOSFET TYPE STW12NC60 • ■ ■ ■ ■ VDSS RDS on ID 600V < 0.55Ω 12 A TYPICAL RDS(on) = 0.48Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED


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    PDF STW12NC60 O-247 STW12NC60 diode F4 6A

    irfp460

    Abstract: irfp460 30v
    Text: IRFP460 N-CHANNEL 500V - 0.22Ω - 18.4A TO-247 PowerMesh II MOSFET TYPE IRFP460 • ■ ■ ■ ■ VDSS RDS on ID 500V < 0.27Ω 18.4A TYPICAL RDS(on) = 0.22Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED


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    PDF IRFP460 O-247 irfp460 irfp460 30v

    E1789

    Abstract: No abstract text available
    Text: PD - 95173 IRG4BC30WPbF INSULATED GATE BIPOLAR TRANSISTOR Features • Designed expressly for Switch-Mode Power Supply and PFC power factor correction applications • Industry-benchmark switching losses improve efficiency of all power supply topologies


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    PDF IRG4BC30WPbF O-220AB E1789

    MOSFET 20V 120A

    Abstract: P300NH02L B300NH02L JESD97 STB300NH02L STP300NH02L
    Text: STB300NH02L STP300NH02L N-channel 24V - 120A - TO-220 / D2PAK STripFET Power MOSFET PRELIMINARY DATA General features Type VDSS RDS on ID STB300NH02L 24V < 1.8mΩ 120A STP300NH02L 24V < 2.2mΩ 120A • RDS(on)*Qg industry’s benchmark ■ Conduction losses reduced


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    PDF STB300NH02L STP300NH02L O-220 O-220 MOSFET 20V 120A P300NH02L B300NH02L JESD97 STB300NH02L STP300NH02L

    20885 D

    Abstract: 15ETX06 15ETX06PBF RoHS 20885 15ETX06FP IRFP250 PD-20885
    Text: Bulletin PD-20885 rev. A 10/06 15ETX06PbF 15ETX06FPPbF Hyperfast Rectifier Features • • • • • • trr = 18 ns IF AV = 15Amp VR = 600V Benchmark Ultra-low Forward Voltage Drop Hyperfast Recovery Time Low Leakage Current 175°C Operating Junction Temperature


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    PDF PD-20885 15ETX06PbF 15ETX06FPPbF 15Amp O-220, O-220AC O-220 20885 D 15ETX06 15ETX06PBF RoHS 20885 15ETX06FP IRFP250

    D36NH02L

    Abstract: JESD97 STD36NH02L
    Text: STD36NH02L N-channel 24V - 0.011Ω - 30A - DPAK STripFET III Power MOSFET General features Type VDSS RDS on ID STD36NH02L 24V <0.0145Ω 30A (1) 1. Guaranteed when external Rg=4.7Ω and tf < tfmax • RDS(on) * Qg industry’s benchmark ■ Conduction losses reduced


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    PDF STD36NH02L O-252 D36NH02L D36NH02L JESD97 STD36NH02L

    d38nh

    Abstract: D38NH02L JESD97 STD38NH02L STD38NH02L-1 STD38NH02LT4
    Text: STD38NH02L STD38NH02L-1 N-channel 24V - 0.011Ω - 38A - DPAK/IPAK STripFET III Power MOSFET General features Type VDSS RDS on ID STD38NH02L-1 24V <0.0135Ω 38A STD38NH02L 24V <0.0135Ω 38A • Logic level device ■ RDS(ON) * Qg Industry’s benchmark


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    PDF STD38NH02L STD38NH02L-1 d38nh D38NH02L JESD97 STD38NH02L STD38NH02L-1 STD38NH02LT4

    Untitled

    Abstract: No abstract text available
    Text: Temic Se mi t o n d u e t or s ♦ World-class excellence ♦ Benchmarking ♦ EFQM approach ♦ Measurement of customer satisfaction - QFD ♦ Corporate customer service policy ♦ Cost of quality ♦ TEMIC worldwide ISO 9000 certification ♦ FMEA-DOE ♦ Supplier partnership


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    intel 80287

    Abstract: ibm at motherboard 80286 intel 80286 TECHNICAL intel 80287 arithmetic coprocessor 80C287-16 ic 80286 intel 80C287 coprocessor
    Text: 80C287 Coprocessor/Software Accelerator Performance Benchmarks by Linda Bishop INTRODUCTION The math coprocessor/software accelerator performing floating-point arithmetic helps your 80286-based com­ puter do more work in less time. A computer with a high-speed math coprocessor installed can perform


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    PDF 80C287 80286-based BLP88, TSA88 AST100 intel 80287 ibm at motherboard 80286 intel 80286 TECHNICAL intel 80287 arithmetic coprocessor 80C287-16 ic 80286 intel 80C287 coprocessor