D150*h02l
Abstract: D150N d150nh02 STD150 STD150NH02L-1 DPAK 0181G D150Nh02l
Text: STD150NH02L-1 STD150NH02L N-channel 24V - 0.003Ω - 150A - ClipPAK - IPAK STripFET™ IlI Power MOSFET General features Type VDSSS RDS on ID STD150NH02L STD150NH02L-1 24V 24V <0.0035Ω <0.0035Ω 150A 150A ) s ( t 3 3 1 • RDS(on) * Qg industry’s benchmark
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STD150NH02L-1
STD150NH02L
STD150NH02L
STD150NH02L-1
D150*h02l
D150N
d150nh02
STD150
STD150NH02L-1 DPAK
0181G
D150Nh02l
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IEC60721-3-3
Abstract: L4936E IEC60721 Storage of Products Supplied by Infineon Technologies IDC08S120E Infineon Automotive Technology
Text: IDC08S120E 1200V thinQ!TM SiC Schottky Diode A Features: Applications: • Revolutionary Semiconductor Material Silicon Carbide Switching Behaviour Benchmark No Reverse Recovery / No Forward Recovery Temperature Independent Switching
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IDC08S120E
L4936E,
IEC60721-3-3
L4936E
IEC60721
Storage of Products Supplied by Infineon Technologies
IDC08S120E
Infineon Automotive Technology
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Storage of Products Supplied by Infineon Technologies
Abstract: IEC60721-3-3 IEC60721 L4926E
Text: IDC73D120T6H 1200V thinQ!TM SiC Schottky Diode A Features: Applications: • Revolutionary Semiconductor Material Silicon Carbide Switching Behaviour Benchmark No Reverse Recovery / No Forward Recovery Temperature Independent Switching
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IDC73D120T6H
IDC05S120E
L4926E,
Storage of Products Supplied by Infineon Technologies
IEC60721-3-3
IEC60721
L4926E
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ROADM JDSU
Abstract: ROADM Polatis FC/SC PATCH CORD SINGLE MODE ooo switch rs232 protocol Transistor 5503 EIA-526-14A
Text: Optical Switch Tray OST Optical Switch Tray The Polatis OST family of products set the industry benchmark for performance in a compact, fully non-blocking optical switch. The OST is an ideal platform for network-level switching, given its ultra-low loss, fast switch speed, and high reliability
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PROD-402-04-0-S
ROADM JDSU
ROADM
Polatis
FC/SC PATCH CORD SINGLE MODE
ooo switch
rs232 protocol
Transistor 5503
EIA-526-14A
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Untitled
Abstract: No abstract text available
Text: VS-8ETX06PbF, VS-8ETX06-N3, VS-8ETX06FPPbF, VS-8ETX06FP-N3 www.vishay.com Vishay Semiconductors Hyperfast Rectifier, 8 A FRED Pt FEATURES • Hyperfast recovery time • Benchmark ultralow forward voltage drop • 175 °C operating junction temperature TO-220 FULL-PAK
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VS-8ETX06PbF,
VS-8ETX06-N3,
VS-8ETX06FPPbF,
VS-8ETX06FP-N3
O-220AC
O-220
E78996
2002/95/EC
JEDEC-JESD47
VS-8ETX06PbF
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15ETX06-1
Abstract: 15ETX06S IRFP250
Text: VS-15ETX06SPbF, VS-15ETX06-1PbF Vishay High Power Products Hyperfast Rectifier, 15 A FRED Pt FEATURES • Benchmark ultralow forward voltage drop VS-15ETX06-1PbF VS-15ETX06SPbF • Hyperfast recovery time • Low leakage current • 175 °C operating junction temperature
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VS-15ETX06SPbF,
VS-15ETX06-1PbF
VS-15ETX06SPbF
J-STD-020,
2002/95/EC
AEC-Q101
11-Mar-11
15ETX06-1
15ETX06S
IRFP250
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STU16NC50
Abstract: No abstract text available
Text: STU16NC50 N-CHANNEL 500V - 0.22Ω - 16A Max220 PowerMesh II MOSFET TYPE STU16NC50 • ■ ■ ■ ■ VDSS RDS on ID 500V < 0.27Ω 16 A TYPICAL RDS(on) = 0.22Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED
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STU16NC50
Max220
STU16NC50
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DSA00105971
Abstract: STP3NC50
Text: STP3NC50 N-CHANNEL 500V - 3Ω - 2.8A TO-220 PowerMesh II MOSFET • ■ ■ ■ ■ TYPE VDSS RDS on ID STP3NC50 500 V <4Ω 2.8 A TYPICAL RDS(on) = 3 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED
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STP3NC50
O-220
DSA00105971
STP3NC50
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Untitled
Abstract: No abstract text available
Text: STL13DP10F6 Dual P-channel 100 V, 0.136 Ω typ., 3.3 A STripFET VI DeepGATE™ Power MOSFET in a PowerFLAT™ 5x6 double island Datasheet - production data Features 1 4 1 Order code VDS RDS on max. ID STL13DP10F6 100 V 0.18 Ω 3.3 A • RDS(on) * Qg industry benchmark
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STL13DP10F6
DocID023936
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IEC60721-3-3
Abstract: Storage of Products Supplied by Infineon Technologies sic wafer 100 mm bare die schottky diode IDT05S60
Text: IDC05S60CE 2nd generation thinQ!TM SiC Schottky Diode A Features: Applications: • Revolutionary Semiconductor Material Silicon Carbide Switching Behaviour Benchmark No Reverse Recovery / No Forward Recovery Temperature Independent Switching
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IDC05S60CE
L4724E,
IEC60721-3-3
Storage of Products Supplied by Infineon Technologies
sic wafer 100 mm
bare die schottky diode
IDT05S60
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LMC6041
Abstract: LMC6001 LMC6001AIH LMC6001AIN LMC6001BIH LMC6001BIN LMC6001CIN LM4040D1Z-2 ph probe amplifier LM6001
Text: LMC6001 Ultra Ultra-Low Input Current Amplifier General Description Featuring 100% tested input currents of 25 fA max., low operating power, and ESD protection of 2000V, the LMC6001 achieves a new industry benchmark for low input current operational amplifiers. By tightly controlling the molding compound, National is able to offer this ultra-low input current in
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LMC6001
LMC6001A
LMC6001
LMC6041
LMC6001AIH
LMC6001AIN
LMC6001BIH
LMC6001BIN
LMC6001CIN
LM4040D1Z-2
ph probe amplifier
LM6001
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STS11N3LLH5
Abstract: 001411A
Text: STS11N3LLH5 N-channel 30 V, 0.012 Ω, 11 A, SO-8 STripFET V Power MOSFET Features Type VDSS RDS on max ID STS11N3LLH5 30 V < 0.014 Ω 11 A (1) 1. The value is rated according Rthj-pcb • RDS(on) * Qg industry benchmark ■ Extremely low on-resistance RDS(on)
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STS11N3LLH5
STS11N3LLH5
001411A
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FTN035N60
Abstract: No abstract text available
Text: FTN035N60 600V, N-Channel MOSFET General Features BVDSS RDS ON (Max.) ID 600V 13.5 Ω 0.35A eet • Extremely high dv/dt capability • Low Gate Charge • ESD improved capability • 100% avalanche tested • New high voltage Benchmark aSh Applications:
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FTN035N60
FTN035N60
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Untitled
Abstract: No abstract text available
Text: STL9N3LLH5 N-channel 30 V, 0.015 Ω, 9 A, PowerFLAT 3.3x3.3 STripFET™ V Power MOSFET Features Type VDSS RDS(on) max ID STL9N3LLH5 30 V < 0.019 Ω 9 A (1) 1. The value is rated according Rthj-pcb • RDS(on) * Qg industry benchmark ■ Extremely low on-resistance RDS(on)
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P008B DIODE
Abstract: STN1HNC60
Text: STN1HNC60 N-CHANNEL 600V - 7Ω - 0.4A - SOT-223 PowerMesh II MOSFET TYPE STN1HNC60 • ■ ■ ■ ■ VDSS RDS on ID 600 V <8Ω 0.4 A TYPICAL RDS(on) = 7Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED
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STN1HNC60
OT-223
P008B DIODE
STN1HNC60
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STW12NC60
Abstract: diode F4 6A
Text: STW12NC60 N-CHANNEL 600V - 0.48Ω - 12A TO-247 PowerMesh II MOSFET TYPE STW12NC60 • ■ ■ ■ ■ VDSS RDS on ID 600V < 0.55Ω 12 A TYPICAL RDS(on) = 0.48Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED
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STW12NC60
O-247
STW12NC60
diode F4 6A
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irfp460
Abstract: irfp460 30v
Text: IRFP460 N-CHANNEL 500V - 0.22Ω - 18.4A TO-247 PowerMesh II MOSFET TYPE IRFP460 • ■ ■ ■ ■ VDSS RDS on ID 500V < 0.27Ω 18.4A TYPICAL RDS(on) = 0.22Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED
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IRFP460
O-247
irfp460
irfp460 30v
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E1789
Abstract: No abstract text available
Text: PD - 95173 IRG4BC30WPbF INSULATED GATE BIPOLAR TRANSISTOR Features • Designed expressly for Switch-Mode Power Supply and PFC power factor correction applications • Industry-benchmark switching losses improve efficiency of all power supply topologies
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IRG4BC30WPbF
O-220AB
E1789
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MOSFET 20V 120A
Abstract: P300NH02L B300NH02L JESD97 STB300NH02L STP300NH02L
Text: STB300NH02L STP300NH02L N-channel 24V - 120A - TO-220 / D2PAK STripFET Power MOSFET PRELIMINARY DATA General features Type VDSS RDS on ID STB300NH02L 24V < 1.8mΩ 120A STP300NH02L 24V < 2.2mΩ 120A • RDS(on)*Qg industry’s benchmark ■ Conduction losses reduced
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STB300NH02L
STP300NH02L
O-220
O-220
MOSFET 20V 120A
P300NH02L
B300NH02L
JESD97
STB300NH02L
STP300NH02L
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20885 D
Abstract: 15ETX06 15ETX06PBF RoHS 20885 15ETX06FP IRFP250 PD-20885
Text: Bulletin PD-20885 rev. A 10/06 15ETX06PbF 15ETX06FPPbF Hyperfast Rectifier Features • • • • • • trr = 18 ns IF AV = 15Amp VR = 600V Benchmark Ultra-low Forward Voltage Drop Hyperfast Recovery Time Low Leakage Current 175°C Operating Junction Temperature
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PD-20885
15ETX06PbF
15ETX06FPPbF
15Amp
O-220,
O-220AC
O-220
20885 D
15ETX06
15ETX06PBF RoHS
20885
15ETX06FP
IRFP250
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D36NH02L
Abstract: JESD97 STD36NH02L
Text: STD36NH02L N-channel 24V - 0.011Ω - 30A - DPAK STripFET III Power MOSFET General features Type VDSS RDS on ID STD36NH02L 24V <0.0145Ω 30A (1) 1. Guaranteed when external Rg=4.7Ω and tf < tfmax • RDS(on) * Qg industry’s benchmark ■ Conduction losses reduced
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STD36NH02L
O-252
D36NH02L
D36NH02L
JESD97
STD36NH02L
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d38nh
Abstract: D38NH02L JESD97 STD38NH02L STD38NH02L-1 STD38NH02LT4
Text: STD38NH02L STD38NH02L-1 N-channel 24V - 0.011Ω - 38A - DPAK/IPAK STripFET III Power MOSFET General features Type VDSS RDS on ID STD38NH02L-1 24V <0.0135Ω 38A STD38NH02L 24V <0.0135Ω 38A • Logic level device ■ RDS(ON) * Qg Industry’s benchmark
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STD38NH02L
STD38NH02L-1
d38nh
D38NH02L
JESD97
STD38NH02L
STD38NH02L-1
STD38NH02LT4
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Untitled
Abstract: No abstract text available
Text: Temic Se mi t o n d u e t or s ♦ World-class excellence ♦ Benchmarking ♦ EFQM approach ♦ Measurement of customer satisfaction - QFD ♦ Corporate customer service policy ♦ Cost of quality ♦ TEMIC worldwide ISO 9000 certification ♦ FMEA-DOE ♦ Supplier partnership
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intel 80287
Abstract: ibm at motherboard 80286 intel 80286 TECHNICAL intel 80287 arithmetic coprocessor 80C287-16 ic 80286 intel 80C287 coprocessor
Text: 80C287 Coprocessor/Software Accelerator Performance Benchmarks by Linda Bishop INTRODUCTION The math coprocessor/software accelerator performing floating-point arithmetic helps your 80286-based com puter do more work in less time. A computer with a high-speed math coprocessor installed can perform
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80C287
80286-based
BLP88,
TSA88
AST100
intel 80287
ibm at motherboard 80286
intel 80286 TECHNICAL
intel 80287 arithmetic coprocessor
80C287-16
ic 80286
intel 80C287
coprocessor
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