BF998 |
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Infineon Technologies
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Single Non Biased; Package: PG-SOT143-4; ID (max): 30.0 mA; Ptot (max): 200.0 mW; gfs (typ): 24.0 mS; Gp (typ): 20.0 dB; F (typ): 1.8 dB; |
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BF998 |
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Infineon Technologies
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Silicon N-Channel MOSFET Tetrode |
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BF998 |
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Infineon Technologies
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Silicon N-Channel MOSFET Tetrode in SOT-143 package. For low noise, gain controlled input stages up to 1GHz. |
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BF 998 |
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Infineon Technologies
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TRANS MOSFET N-CH 12V 0.03A 4SOT-143 |
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BF998 |
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NXP Semiconductors
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BF998 - Silicon N-channel dual-gate MOS-FETs - CIS TYP: 2.1 pF; COS: 1.05 pF; ID: 30 mA; IDSS: 2 to 18 mA; IDSS min.: 1.05 mA; Noise figure: 1@800MHz dB; Note: With external bias ; Remarks: VHF and UHF ; -V(P)GS MAX: 2 V; VDSmax: 12 V; YFS min.: 21 mS |
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BF998 |
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Philips Semiconductors
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Silicon N-Channel MOSFET Tetrode |
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BF998 |
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Philips Semiconductors
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Silicon N-Channel Dual Gate MOS-FET |
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BF998 |
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Siemens
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Cross Reference Guide 1998 |
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BF998 |
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Siemens
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RF-Transistors, MMICs, RF-Diodes, AF-Diodes, AF-Schottky Diodes and RF-Schottky Diodes Guide |
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BF998 |
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Siemens
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Silicon N Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor For low-noise, gain-controlled input stages up to 1 GHz) |
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BF998 |
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Vishay Telefunken
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N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode |
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BF998 |
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Vishay Telefunken
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TRANS MOSFET N-CH 12V 0.03A 4SOT-143 |
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BF998 |
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Unknown
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Shortform Datasheet & Cross References Data |
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Short Form |
PDF
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BF998 |
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Unknown
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Shortform IC and Component Datasheets (Plus Cross Reference Data) |
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Short Form |
PDF
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BF998 |
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Unknown
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Shortform IC and Component Datasheets (Plus Cross Reference Data) |
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Short Form |
PDF
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BF998 |
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Unknown
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Shortform Data and Cross References (Misc Datasheets) |
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Short Form |
PDF
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BF998 |
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Philips Semiconductors
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Silicon n-channel dual gate MOS-FET |
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Scan |
PDF
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BF998 |
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Philips Semiconductors
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Silicon N-Channel Dual Gate MOS-FET |
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Scan |
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BF998,215 |
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NXP Semiconductors
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BF998 - TRANSISTOR UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, PLASTIC PACKAGE-4, FET RF Small Signal |
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BF998,215 |
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NXP Semiconductors
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Silicon N-channel dual-gate MOS-FETs - CIS TYP: 2.1 pF; COS: 1.05 pF; ID: 30 mA; IDSS: 2 to 18 mA; IDSS min.: 1.05 mA; Noise figure: 1@800MHz dB; Note: With external bias ; Remarks: VHF and UHF ; -V(P)GS MAX: 2 V; VDSmax: 12 V; YFS min.: 21 mS; Package: SOT143R (SC-61B); Container: Tape reel smd |
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