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    Catalog Datasheet MFG & Type Document Tags PDF

    JY marking transistor

    Abstract: Transistor 5331 MRB11080Y
    Text: N AMER P H I L I P S / D I S CR ET E ObE D • bfa53T311SD47 DEVELOPMENT DATA 2 m MRB11080Y T his data sheet contains advance information and specifications are subject to change w ithout notice. T -33-iiT PULSED MICROWAVE POWER TRANSISTOR N-P-N silicon power transistor intended for use in military and professional applications. It operates


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    fafa53T31 1SD47 MRB11080Y FO-67 JY marking transistor Transistor 5331 MRB11080Y PDF

    BUZ84

    Abstract: t03 package transistor pin dimensions BU184 TRANSISTOR 13-h
    Text: N AMER PHILIPS/DISCRETE ObE D • ^53=131 QDlMblt 1 ■ BUZ 84 ^ - 5 ^ 1 3 PowerMOS transistor July 1987 QUICK REFERENCE DATA GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a metal envelope. This device is intended for use in


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    BUZ84 Q0147QE T-39-13 BIXZ84 BUZ84 t03 package transistor pin dimensions BU184 TRANSISTOR 13-h PDF

    DIODE m1

    Abstract: m3062 BYQ27
    Text: N AMER P H I L I P S / D I S C R E T E 5SE D • b b S B T B l 'oQSeaflS H M I - BYQ27 SERIES JL 7 T Q 3 -/7 ULTRA FAST-RECOVERY DOUBLE RECTIFIER DIODES Glass-passivated, high-efficiency double rectifier diodes in plastic envelopes, featuring low forward


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    BYQ27 T-03-17 M1720 bbS3131 M3053 DIODE m1 m3062 PDF

    BUZ356

    Abstract: T0218AA BUZ-356
    Text: N AMER PH IL IP S/D ISCRETE ObE D PowerMOS transistor • =.1353^31 DQ14SH2 S BUZ356 * r= -5 l-i3 May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies


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    BUZ356 T0218AA; BUZ356 T-39-13 T0218AA BUZ-356 PDF

    Philips BUP23C

    Abstract: BUP23C BUP22B BUP23B 6to8
    Text: N AMER P H I L I P S / D I S C R E T E 2SE tI D JU JJ D DQlfiti T3 4 I BUP23B BUP23C A T - 3 3 - / Í T -SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed, glass-passivated npn power transistors in a SOT93 envelope, intended for use in converters, inverters, switching regulators, motor control systems etc.


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    BUP23B BUP23C BUP23B BUP23B; BUP23C. T-33-T5 Philips BUP23C BUP23C BUP22B 6to8 PDF

    OM175

    Abstract: OM322 philips hybrid philips hybrid amplifier modules DIN45004 IEC134 uhf amplifier module philips 74090 vHF amplifier module soldering-iron
    Text: N AMER PHILIPS/DISCRETE ïf bbSBTBl OOlâBTS 7 • OM 322 2SE D L HYBRID VHF/UHF WIDE-BAND AMPLIFIER Two-stage wide-band amplifier in the hybrid technique, designed for use as distribution amplifier in MATV and CATV systems and as general-purpose amplifier for v .h .f. and


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    001flQ OM322 OM175 OM175. DIN45004, OM322 T-74-09-01 philips hybrid philips hybrid amplifier modules DIN45004 IEC134 uhf amplifier module philips 74090 vHF amplifier module soldering-iron PDF