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    BUK555-50A

    Abstract: BUK555-50B T0220AB
    Text: N AMER PH IL I PS /D IS CR ET E SSE J> m bfciS3ci31 0D20t3S G • PowerMOS transìstor Logic Level FET BUK555-50A BUK555-50B T “- 3 ? - y 3 QUICK REFERENCE DATA GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope.


    OCR Scan     		PDF bfaS3T31 0D20t3S BUK555-50A BUK555-50B BUK555 Dra20 BUK555-50A BUK555-50B T0220AB

    BUK555-50A

    Abstract: BUK555-50B T0220AB 418 NDS
    Text: N AMER PHILIPS/DISCRETE SSE J> bfciS3ci31 0 D 2 0 t 3 S m G • PowerMOS transìstor Logic Level FET BUK555-50A BUK555-50B N-channel enhancement mode logic level field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies


    OCR Scan     		PDF bfaS3T31 0D20t3S BUK555-50A BUK555-50B BUK555 BUK555-50B T0220AB 418 NDS

    CNX82A

    Abstract: philips cnx82a
    Text: P h ilip s S em ico n d u cto rs Product specification CNX82A/CNX83A High-voltage optocouplers FEATURES • High current transfer ratio and low saturation voltage, making the devices suitable tor use with TTL integrated circuits • High degree of A C and DC


    OCR Scan     		PDF CNX82A/CNX83A CNX82A CNX83Aare OT231 CNX83A. E90700 philips cnx82a