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    Infineon Technologies AG BFP405H6327XTSA1

    RF TRANS NPN 5V 25GHZ SOT343
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    DigiKey BFP405H6327XTSA1 Digi-Reel 5,800 1
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    BFP405H6327XTSA1 Cut Tape 5,800 1
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    BFP405H6327XTSA1 Reel 3,000 3,000
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    Mouser Electronics BFP405H6327XTSA1 960
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    Verical BFP405H6327XTSA1 2,450 239
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    Newark BFP405H6327XTSA1 Cut Tape 1,690 5
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    Bristol Electronics BFP405H6327XTSA1 1,500
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    Quest Components BFP405H6327XTSA1 1,200
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    TME BFP405H6327XTSA1 1
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    Chip1Stop BFP405H6327XTSA1 Cut Tape 2,450
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    Infineon Technologies AG BFP405H6740XTSA1

    RF TRANS NPN 5V 25GHZ SOT343
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    DigiKey BFP405H6740XTSA1 Digi-Reel 3,000 1
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    BFP405H6740XTSA1 Reel 3,000 3,000
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    Mouser Electronics BFP405H6740XTSA1
    • 1 $0.41
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    Verical BFP405H6740XTSA1 339,000 3,000
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    BFP405H6740XTSA1 191,450 2,112
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    BFP405H6740XTSA1 155,528 2,112
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    BFP405H6740XTSA1 3,000 2,112
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    Rochester Electronics BFP405H6740XTSA1 349,978 1
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    Infineon Technologies AG BFP405FH6327XTSA1

    TRANS RF NPN 4.5V 25MA TSFP-4
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    DigiKey BFP405FH6327XTSA1 Cut Tape 440 1
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    BFP405FH6327XTSA1 Digi-Reel 440 1
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    BFP405FH6327XTSA1 Reel 3,000
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    Mouser Electronics BFP405FH6327XTSA1
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    Verical BFP405FH6327XTSA1 237,000 3,000
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    BFP405FH6327XTSA1 192,731 2,498
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    BFP405FH6327XTSA1 63,541 2,498
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    BFP405FH6327XTSA1 8,945 270
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    BFP405FH6327XTSA1 4,696 46
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    Arrow Electronics BFP405FH6327XTSA1 Cut Strips 4,696 10 Weeks 1
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    Newark BFP405FH6327XTSA1 Cut Tape 2,745 5
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    Rochester Electronics BFP405FH6327XTSA1 712,261 1
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    Chip-Germany GmbH BFP405FH6327XTSA1 52
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    Infineon Technologies AG BFP-405F-E6327

    RF TRANS NPN 5V 25GHZ 4TSFP
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    DigiKey BFP-405F-E6327 Reel 3,000
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    Infineon Technologies AG BFP405E6433HTMA1

    RF TRANS NPN 5V 25GHZ SOT343-4
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    DigiKey BFP405E6433HTMA1 Reel 10,000
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    BFP405 Datasheets (25)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BFP405 Infineon Technologies Si, SiGe RF Transistors, fT = 24 to 70 GHz; Package: PG-SOT343-4; VCEO (max): 4.5 V; IC(max): 12.0 mA; Ptot (max): 55.0 mW; fT (typ): 25.0 GHz; F (typ): 1.25 dB; Original PDF
    BFP405 Infineon Technologies NPN Silicon RF Transistor Original PDF
    BFP405 Siemens RF-Transistors, MMICs, RF-Diodes, AF-Diodes, AF-Schottky Diodes and RF-Schottky Diodes Guide Original PDF
    BFP405 Siemens NPN Silicon RF Transistor (For low current applications For oscillators up to 12 GHz) Original PDF
    BFP405E6327 Infineon Technologies RF Transistors (BJT), Discrete Semiconductor Products, TRANS NPN RF 4.5V SOT-343 Original PDF
    BFP405E6327 Infineon Technologies TRANS GP BJT NPN 4.5V 0.012A 4 Original PDF
    BFP405E6327BTSA1 Infineon Technologies Discrete Semiconductor Products - Transistors - Bipolar (BJT) - RF - TRANS NPN RF 4.5V SOT-343 Original PDF
    BFP405E6433 Infineon Technologies RF Transistors (BJT), Discrete Semiconductor Products, TRANSISTOR RF NPN 4.5V SOT-343 Original PDF
    BFP405E6433 Infineon Technologies TRANS GP BJT NPN 4.5V 0.012A 4 Original PDF
    BFP405E6433HTMA1 Infineon Technologies Discrete Semiconductor Products - Transistors - Bipolar (BJT) - RF - TRANSISTOR RF NPN 4.5V SOT-343 Original PDF
    BFP405E6740 Infineon Technologies RF Transistors (BJT), Discrete Semiconductor Products, TRANSISTOR NPN RF 4.5V SOT-343 Original PDF
    BFP405E6740HTSA1 Infineon Technologies Discrete Semiconductor Products - Transistors - Bipolar (BJT) - RF - TRANSISTOR NPN RF 4.5V SOT-343 Original PDF
    BFP405ECSP Infineon Technologies BFP405ECSP Original PDF
    BFP405F Infineon Technologies NPN Silicon RF transistor for low current applications in NEW thin small flatlead package TSFP-4 Original PDF
    BFP405F Infineon Technologies Si, SiGe RF Transistors, fT = 24 to 70 GHz; Package: PG-TSFP-4; VCEO (max): 4.5 V; IC(max): 12.0 mA; Ptot (max): 55.0 mW; fT (typ): 25.0 GHz; F (typ): 1.25 dB; Original PDF
    BFP 405F E6327 Infineon Technologies Discrete Semiconductor Products - Transistors - Bipolar (BJT) - RF - TRANSISTOR RF NPN 4.5V TSFP-4 Original PDF
    BFP405FE6327 Infineon Technologies RF Transistors (BJT), Discrete Semiconductor Products, TRANSISTOR RF NPN 4.5V TSFP-4 Original PDF
    BFP405FE6327 Infineon Technologies TRANS GP BJT NPN 4.5V 0.012 Original PDF
    BFP405FH6327XTSA1 Infineon Technologies Discrete Semiconductor Products - Transistors - Bipolar (BJT) - RF - TRANS RF NPN 4.5V 25MA TSFP-4 Original PDF
    BFP405H6327 Infineon Technologies RF Transistors (BJT), Discrete Semiconductor Products, TRANS RF NPN 4.5V 25MA SOT343 Original PDF

    BFP405 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BFP405

    Abstract: BCR400 rf amplifier siemens 10 ghz aplication note SIEMENS BFP405
    Text: Application Note No. 020 Discrete & RF Semiconductors G. Lohninger A Low-Noise-Amplifier at 1.9 GHz using BFP405 This application note describes a low noise amplifier at 1.9GHz using SIEMENS SIEGET 25 BFP405. The design emphasis has been on achieving a low noise


    Original
    PDF BFP405 BFP405. 100pF BFP405 BCR400 rf amplifier siemens 10 ghz aplication note SIEMENS BFP405

    BFP405

    Abstract: A03 RF amplifier A03 amplifier BCR400
    Text: Application Note No. 021 Discrete & RF Semiconductors G. Lohninger A Low-Noise-Amplifier shows good Noise Figure performance at 1.9 GHz using BFP405 This application note describes a low noise amplifier at 1.9GHz using Siemens SIEGET25 BFP405. The design emphasis has been on achieving a low noise


    Original
    PDF BFP405 BFP405. 100pF BFP405 A03 RF amplifier A03 amplifier BCR400

    types of transistors

    Abstract: BFP405 VPS05605 internal circuit diagram of choke BCR410W AN064 RF Transistor reference SOT343 C1 c4 rf amplifier
    Text: Application Note No. 064 Silicon Discretes Using the BCR410W Bias Controller with BFP405 in Amplifier Circuits Introduction 3 Low supply voltages in mobile electronic devices increasingly jeopardize your efforts to supply your RF amplifiers with stable bias current. Most of the commonly


    Original
    PDF BCR410W BFP405 BFP405, VPS05605 AN064 BFP405 BCR410W types of transistors VPS05605 internal circuit diagram of choke AN064 RF Transistor reference SOT343 C1 c4 rf amplifier

    rx 3152

    Abstract: A1306 2Q394 IC LP7 A-1306 500R BFP405 BGC405 Q62702-G0091 RX82 equivalent
    Text: BGC405 Self-Biased BFP405 l l l l l SIEGET25- Technology Small SCT598-Package Control Pin For Switching The Device Off Current Easy Adjustable By An External Resistor Voltage Independent Current 2V – 4.5V 8 7 6 5 2 1 3 4 VPW05982 ESD: Electrostatic discharge sensitive device, observe


    Original
    PDF BGC405 BFP405 SCT598-Package VPW05982 Q62702-G0091 SCT598 BGC405 s000E rx 3152 A1306 2Q394 IC LP7 A-1306 500R BFP405 Q62702-G0091 RX82 equivalent

    RF TRANSISTOR 10GHZ

    Abstract: BFP405 10GHz oscillator RF TRANSISTOR 10GHZ low noise TRANSISTOR NPN 5GHz BGA420 BFP405 ALs 2n2222+spice+model
    Text: BFP405 NPN Silicon RF Transistor • For low current applications 3 • For oscillators up to 12 GHz 2 4 • Noise figure F = 1.25 dB at 1.8 GHz 1 outstanding Gms = 23 dB at 1.8 GHz • SIEGET  25 GHz fT - Line • Pb-free RoHS compliant package • Qualified according AEC Q101


    Original
    PDF BFP405 OT343 RF TRANSISTOR 10GHZ BFP405 10GHz oscillator RF TRANSISTOR 10GHZ low noise TRANSISTOR NPN 5GHz BGA420 BFP405 ALs 2n2222+spice+model

    a06 transistor

    Abstract: TRANSISTOR A06 Code "A06" RF Semiconductor marking AAAA marking A06 BF 184 transistor BFP405 a06 transistor 165 chip diode 047 SIEMENS BFP405
    Text: SIEGET 25 BFP405 NPN Silicon RF Transistor Low Current Applications l For Oscillators up to 12 GHz l For Noise Figure F = 1.15 dB at 1.8 GHz l Outstanding G = 22 dB at 1.8 GHz Transition Frequency f = 25 GHz l Gold metalization for high reliability l SIEGET 25-Line


    Original
    PDF BFP405 1512dB 25-Line OT343 Q62702-F-1592 a06 transistor TRANSISTOR A06 Code "A06" RF Semiconductor marking AAAA marking A06 BF 184 transistor BFP405 a06 transistor 165 chip diode 047 SIEMENS BFP405

    TRANSISTOR MARKING YB

    Abstract: BFP405F marking al
    Text: SIEGET 25 BFP405F NPN Silicon RF Transistor XYs Preliminary data  For low current applications  Smallest Package 1.4 x 0.8 x 0.59mm 3  Noise figure F = 1.25 dB at 1.8 GHz 4 outstanding G ms = 23 dB at 1.8 GHz  Transition frequency f T = 25 GHz  Gold metallization for high reliability


    Original
    PDF BFP405F 100MHz. EHA07307 May-29-2001 TRANSISTOR MARKING YB BFP405F marking al

    rf amplifier siemens 10 ghz

    Abstract: BFP405 SIEMENS BFP405 BCR400
    Text: Application Note No. 019 Discrete & RF Semiconductors G. Lohninger A Low-Noise-Amplifier with good IP3out performance at 1.9 GHz using BFP405 This application note describes a low noise amplifier at 1.9GHz using SIEMENS SIEGET25 BFP405. The design emphasis has been on achieving high output


    Original
    PDF BFP405 BFP405. 15dBm 100pF rf amplifier siemens 10 ghz BFP405 SIEMENS BFP405 BCR400

    Untitled

    Abstract: No abstract text available
    Text: BFP405F Low Noise Silicon Bipolar RF Transistor • For low current applications 3 • Minimum noise figure NFmin = 1.25 dB at 1.8 GHz 2 4 1 Outstanding G ms = 22.5 dB at 1.8 GHz • Transition frequency fT = 25 GHz • Pb-free RoHS compliant and halogen-free thin small


    Original
    PDF BFP405F AEC-Q101

    Untitled

    Abstract: No abstract text available
    Text: BFP405F NPN Silicon RF Transistor* • For low current applications 3 • Smallest Package 1.4 x 0.8 x 0.59 mm 2 4 1 • Noise figure F = 1.25 dB at 1.8 GHz outstanding Gms = 23 dB at 1.8 GHz • Transition frequency f T = 25 GHz • Gold metallization for high reliability


    Original
    PDF BFP405F

    TRANSISTOR MARKING YB

    Abstract: TSFP-4 BFP405F CJE marking diode
    Text: SIEGET 25 BFP405F NPN Silicon RF Transistor XYs Preliminary data  For low current applications  Smallest Package 1.4 x 0.8 x 0.59mm 3  Noise figure F = 1.25 dB at 1.8 GHz 4 outstanding G ms = 23 dB at 1.8 GHz  Transition frequency f T = 25 GHz  Gold metallization for high reliability


    Original
    PDF BFP405F 100MHz. EHA07307 Dec-07-2001 TRANSISTOR MARKING YB TSFP-4 BFP405F CJE marking diode

    BFP405F

    Abstract: BFP420F TSFP-4
    Text: BFP405F NPN Silicon RF Transistor* • For low current applications 3 • Smallest Package 1.4 x 0.8 x 0.59 mm 2 4 1 • Noise figure F = 1.25 dB at 1.8 GHz outstanding Gms = 23 dB at 1.8 GHz • Transition frequency f T = 25 GHz • Gold metallization for high reliability


    Original
    PDF BFP405F BFP405F BFP420F TSFP-4

    BFP405

    Abstract: BGA420 S21216
    Text: BFP405 NPN Silicon RF Transistor • For low current applications 3 • For oscillators up to 12 GHz 2 4 • Noise figure F = 1.25 dB at 1.8 GHz 1 outstanding Gms = 23 dB at 1.8 GHz • Transition frequency f T = 25 GHz • Gold metallization for high reliability


    Original
    PDF BFP405 OT343 BFP405 BGA420 S21216

    EHA07307

    Abstract: CJE marking diode
    Text: SIEGET 25 BFP405F NPN Silicon RF Transistor XYs Preliminary data  For low current applications  Smallest Package 1.4 x 0.8 x 0.59mm 3  Noise figure F = 1.25 dB at 1.8 GHz 4 outstanding G ms = 23 dB at 1.8 GHz  Transition frequency f T = 25 GHz  Gold metallization for high reliability


    Original
    PDF BFP405F EHA07307 CJE marking diode

    2Q394

    Abstract: rx 3152 BGC405 A12 marking ikr 251 50W rf power transistor 100MHz 500R BFP405 Q62702-G0091 TL18
    Text: BGC405 Self-Biased BFP405 l l l l l SIEGET25- Technology Small SCT598-Package Control Pin For Switching The Device Off Current Easy Adjustable By An External Resistor Voltage Independent Current 2V – 4.5V 8 7 6 5 2 1 3 4 VPW05982 ESD: Electrostatic discharge sensitive device, observe


    Original
    PDF BGC405 BFP405 SCT598-Package VPW05982 Q62702-G0091 SCT598 BGC405 2Q394 rx 3152 A12 marking ikr 251 50W rf power transistor 100MHz 500R BFP405 Q62702-G0091 TL18

    TRANSISTOR MARKING FA

    Abstract: EHA07307 CJE marking diode
    Text: SIEGET 25 BFP405F NPN Silicon RF Transistor XYs Preliminary data  For low current applications  Smallest Package 1.4 x 0.8 x 0.59mm 3  Noise figure F = 1.25 dB at 1.8 GHz 4 outstanding G ms = 23 dB at 1.8 GHz  Transition frequency f T = 25 GHz  Gold metallization for high reliability


    Original
    PDF BFP405F TRANSISTOR MARKING FA EHA07307 CJE marking diode

    Untitled

    Abstract: No abstract text available
    Text: SIEGET 25 BFP405 NPN Silicon RF Transistor 3  For low current applications 4  For oscillators up to 12 GHz  Noise figure F = 1.25 dB at 1.8 GHz outstanding G ms = 23 dB at 1.8 GHz 2  Transition frequency f T = 25 GHz  Gold metallization for high reliability


    Original
    PDF BFP405 VPS05605 OT343

    Untitled

    Abstract: No abstract text available
    Text: BFP405 NPN Silicon RF Transistor • For low current applications 3 • For oscillators up to 12 GHz 2 4 • Noise figure F = 1.25 dB at 1.8 GHz 1 outstanding Gms = 23 dB at 1.8 GHz • SIEGET  25 GHz fT - Line • Pb-free RoHS compliant package • Qualified according AEC Q101


    Original
    PDF BFP405 OT343

    BFP405F

    Abstract: BFP420F
    Text: BFP405F NPN Silicon RF Transistor* • For low current applications 3 • Smallest Package 1.4 x 0.8 x 0.59 mm 2 4 1 • Noise figure F = 1.25 dB at 1.8 GHz outstanding Gms = 23 dB at 1.8 GHz • Transition frequency f T = 25 GHz • Gold metallization for high reliability


    Original
    PDF BFP405F BFP405F BFP420F

    BFP405 ALs

    Abstract: BFP405
    Text: SIEGET 25 BFP405 NPN Silicon RF Transistor 3  For low current applications 4  For oscillators up to 12 GHz  Noise figure F = 1.25 dB at 1.8 GHz outstanding G ms = 23 dB at 1.8 GHz 2  Transition frequency f T = 25 GHz  Gold metallization for high reliability


    Original
    PDF BFP405 VPS05605 OT343 -j100 Aug-20-2001 BFP405 ALs BFP405

    BFP405 ALs

    Abstract: No abstract text available
    Text: SIEGET 25 BFP405 NPN Silicon RF Transistor 3  For low current applications 4  For oscillators up to 12 GHz  Noise figure F = 1.25 dB at 1.8 GHz outstanding G ms = 23 dB at 1.8 GHz 2  Transition frequency f T = 25 GHz  Gold metallization for high reliability


    Original
    PDF BFP405 VPS05605 OT343 BFP405 ALs

    Untitled

    Abstract: No abstract text available
    Text: BFP405 Low Noise Silicon Bipolar RF Transistor • For low current applications 3 • For oscillators up to 12 GHz 2 4 • Minimum noise figure NFmin = 1.25 dB at 1.8 GHz 1 Outstanding Gms = 23 dB at 1.8 GHz • Pb-free RoHS compliant and halogen-free package


    Original
    PDF BFP405 AEC-Q101 OT343

    SIEMENS BFP405

    Abstract: marking A06 transistor A06
    Text: SIEMENS SIEGET 25 BFP405 NPN Silicon RF Transistor • • • • • • For Low Current Applications For Oscillators up to 12 GHz Noise Figure F = 1.15 dB at 1.8 GHz Outstanding Gms = 22 dB at 1.8 GHz Transition Frequency fT = 25 GHz Gold metalization for high reliability


    OCR Scan
    PDF BFP405 25-Line Transistor25 62702-F-1592 OT343 SIEMENS BFP405 marking A06 transistor A06

    2N2222A-PL

    Abstract: 2sc3883 2sc9018 BF759 2N3055-DIV SS8050 smd 2S-C3883 2SC945 smd smd 2n3055 bu415a
    Text: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su Ten: 495 739-09-95, 644-41-29 T p a H 3 M CTopbi N P N c o p T M p o B K a n o H a n p flw e H M r o Kofl: BFP520 BFG410W BFP405 BFP420 BFP450 BFP540 2SC5088 BFG235 BFR91A BF763 BFG540W BFG94 BFR90A BFR91 BFR92A BFR93A


    OCR Scan
    PDF BFP520 OT343R BFG410W BFP405 BFP420 BFP450 2N2222A-PL 2sc3883 2sc9018 BF759 2N3055-DIV SS8050 smd 2S-C3883 2SC945 smd smd 2n3055 bu415a