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Infineon Technologies AG BFP520H6327XTSA1 RF TRANS NPN 3.5V 45GHZ SOT343-4
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	BFP520H6327XTSA1	Cut Tape	6,003		1	1 $0.31 10 $0.213 100 $0.1626 1000 $0.13609 10000 $0.13609	Buy Now
	BFP520H6327XTSA1	Digi-Reel	6,003		1	1 $0.31 10 $0.213 100 $0.1626 1000 $0.13609 10000 $0.13609	Buy Now
	BFP520H6327XTSA1	Reel	6,000		3,000	1 - 10 - 100 - 1000 - 10000 $0.12836	Buy Now
Avnet Americas	BFP520H6327XTSA1	Reel		8 Weeks	6,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Mouser Electronics	BFP520H6327XTSA1		7,858			1 $0.26 10 $0.149 100 $0.118 1000 $0.118 10000 $0.118	Buy Now
Verical	BFP520H6327XTSA1		33,000		2,899	1 - 10 - 100 - 1000 - 10000 $0.1294	Buy Now
	BFP520H6327XTSA1		8,704		62	1 - 10 - 100 $0.0936 1000 $0.0936 10000 $0.0936	Buy Now
	BFP520H6327XTSA1		5,735		262	1 - 10 - 100 - 1000 $0.1169 10000 $0.1169	Buy Now
	BFP520H6327XTSA1		3,000		2,899	1 - 10 - 100 - 1000 - 10000 $0.1294	Buy Now
	BFP520H6327XTSA1		3,000		2,899	1 - 10 - 100 - 1000 - 10000 $0.1294	Buy Now
Arrow Electronics	BFP520H6327XTSA1		8,704		1	1 $0.1705 10 $0.1038 100 $0.0936 1000 $0.0936 10000 $0.0936	Buy Now

Newark	BFP520H6327XTSA1	Cut Tape			5	1 $0.397 10 $0.269 100 $0.204 1000 $0.17 10000 $0.17	Buy Now
Rochester Electronics	BFP520H6327XTSA1		42,465		1	1 $0.1218 10 $0.1218 100 $0.1145 1000 $0.1035 10000 $0.1035	Buy Now
TME	BFP520H6327XTSA1		2,136		1	1 $0.441 10 $0.325 100 $0.198 1000 $0.148 10000 $0.148	Buy Now
Chip1Stop	BFP520H6327XTSA1	Cut Tape	5,735			1 - 10 $0.242 100 $0.118 1000 $0.0965 10000 $0.0958	Buy Now
EBV Elektronik	BFP520H6327XTSA1			9 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Rochester Electronics LLC BFP520FE6327 LOW-NOISE SI TRANSISTOR
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	BFP520FE6327	Bulk			1,888	1 - 10 - 100 - 1000 - 10000 $0.16	Buy Now
Infineon Technologies AG BFP-520F-E6327 RF TRANS NPN 3.5V 45GHZ 4TSFP
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	BFP-520F-E6327	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now
	BFP-520F-E6327	Digi-Reel			1	1 $0.63 10 $0.63 100 $0.63 1000 $0.63 10000 $0.63	Buy Now
	BFP-520F-E6327	Cut Tape				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Infineon Technologies AG BFP520E6327BTSA1 RF TRANS NPN 3.5V 45GHZ SOT343-4
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	BFP520E6327BTSA1	Reel			6,000	1 - 10 - 100 - 1000 - 10000 $0.18035	Buy Now
Rochester Electronics LLC BFP520FH6327XTSA1 BFP520 - LOW-NOISE SI TRANSISTOR
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	BFP520FH6327XTSA1	Bulk			1,854	1 - 10 - 100 - 1000 - 10000 $0.16	Buy Now

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BFP520 Datasheets (21)

Part	Manufacturer	Description	Datasheet Type	PDF
BFP520	Infineon Technologies	Si, SiGe RF Transistors, fT = 24 to 70 GHz; Package: PG-SOT343-4; V_CEO (max): 2.5 V; I_C(max): 40.0 mA; P_tot (max): 100.0 mW; f_T (typ): 45.0 GHz; F (typ): 0.95 dB;	Original	PDF
BFP520	Infineon Technologies	NPN Silicon RF transistor for low noise, highest gain amplifiers	Original	PDF
BFP520	Infineon Technologies	NPN SILICON RF TRANSISTOR	Original	PDF
BFP520	Philips Semiconductors	NPN 9 GHz Wideband Transistor	Original	PDF
BFP520	Siemens	RF-Transistors, MMICs, RF-Diodes, AF-Diodes, AF-Schottky Diodes and RF-Schottky Diodes Guide	Original	PDF
BFP520	Siemens	NPN Silicon RF Transistor (For highest gain low noise amplifier at 1.8 GHz and 2 mA / 2 V)	Original	PDF
BFP520	Unknown	Shortform Transistor Datasheet Guide	Short Form	PDF
BFP520	Unitra Cemi	Transistor	Scan	PDF
BFP520E6327	Infineon Technologies	TRANS GP BJT NPN 2.5V 0.04A 4	Original	PDF
BFP520E6327BTSA1	Infineon Technologies	Discrete Semiconductor Products - Transistors - Bipolar (BJT) - RF - TRANS NPN RF 2.5V SOT-343	Original	PDF
BFP520E6825	Infineon Technologies	TRANS GP BJT NPN 2.5V 0.04A 4	Original	PDF
BFP520F	Infineon Technologies	Si, SiGe RF Transistors, fT = 24 to 70 GHz; Package: PG-TSFP-4; V_CEO (max): 2.5 V; I_C(max): 40.0 mA; P_tot (max): 100.0 mW; f_T (typ): 45.0 GHz; F (typ): 0.95 dB;	Original	PDF
BFP520F	Infineon Technologies	NPN Silicon RF Transistor	Original	PDF
BFP520F	Infineon Technologies	NPN Silicon RF transistor for low noise, highest gain amplifiers in NEW thin small flatlead package TSFP-4	Original	PDF

BFP520FE6327	Infineon Technologies	TRANS GP BJT NPN 2.5V 0.04	Original	PDF
BFP 520F E6327	Infineon Technologies	Discrete Semiconductor Products - Transistors - Bipolar (BJT) - RF - TRANSISTOR RF NPN 2.5V TSFP-4	Original	PDF
BFP520FE6327	Infineon Technologies	RF Transistors (BJT), Discrete Semiconductor Products, TRANSISTOR RF NPN 2.5V TSFP-4	Original	PDF
BFP520FH6327	Infineon Technologies	RF Transistors (BJT), Discrete Semiconductor Products, TRANS RF NPN 3.5V 40MA 4TSFP	Original	PDF
BFP520FH6327XTSA1	Infineon Technologies	Discrete Semiconductor Products - Transistors - Bipolar (BJT) - RF - TRANS RF NPN 3.5V 40MA 4TSFP	Original	PDF
BFP520H6327	Infineon Technologies	RF Transistors (BJT), Discrete Semiconductor Products, TRANS RF NPN 3.5V 40MA SOT343	Original	PDF

BFP520 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
BFP520F Abstract: BFP420F TSFP-4 transistor BF 235 Text: BFP520F NPN Silicon RF Transistor* • For highest gain low noise amplifier 3 at 1.8 GHz and 2 mA / 2 V 2 4 1 Outstanding Gms = 23 dB Noise Figure F = 0.95 dB • For oscillators up to 15 GHz • Transition frequency f T = 45 GHz • Gold metallisation for high reliability	Original	PDF	BFP520F BFP520F BFP420F TSFP-4 transistor BF 235
IC 7481 pin configuration Abstract: IC 7481 ev 2816 01177 ic rom 2816 BFP520 BFP520 application notes k 3683 transistor Text: SIEGET 45 BFP520 NPN Silicon RF Transistor 3 For highest gain low noise amplifier 4 at 1.8 GHz and 2 mA / 2 V Outstanding Gms = 23 dB Noise Figure F = 0.95 dB For oscillators up to 15 GHz 2 Transition frequency fT = 45 GHz 1 VPS05605 Gold metallization for high reliability	Original	PDF	BFP520 VPS05605 OT343 50Ohm 45GHz -j100 Sep-26-2001 IC 7481 pin configuration IC 7481 ev 2816 01177 ic rom 2816 BFP520 BFP520 application notes k 3683 transistor
AN051A Abstract: transistor cross ref BFP520 application notes AN051 BFP520 2500G Ghz dB transistor N051 amplifier TRANSISTOR 12 GHZ amplifier TRANSISTOR 14 GHZ Text: A pp l ic a t io n N o t e, R e v . 2. 0 , J a n. 2 00 7 A p p li c a t i o n N o t e N o . 0 5 1 SIEGET45 - Low Noise Amplifier with BFP520 T r a n s i s t o r a t 1 .9 G H z R F & P r o t e c ti o n D e v i c e s Edition 2007-01-08 Published by Infineon Technologies AG	Original	PDF	SIEGET45 BFP520 AN051A transistor cross ref BFP520 application notes AN051 BFP520 2500G Ghz dB transistor N051 amplifier TRANSISTOR 12 GHZ amplifier TRANSISTOR 14 GHZ
BFP520F Abstract: No abstract text available Text: SIEGET 45 BFP520F NPN Silicon RF Transistor Preliminary data XYs For highest gain low noise amplifier at 1.8 GHz and 2 mA / 2 V 3 Outstanding Gms = 23 dB 2 4 Noise Figure F = 0.95 dB 1 For oscillators up to 15 GHz Transition frequency fT = 45 GHz TSFP-4	Original	PDF	BFP520F Aug-10-2001 BFP520F
BFP520 Abstract: VPS05605 Text: SIEGET 45 BFP520 NPN Silicon RF Transistor 3 For highest gain low noise amplifier 4 at 1.8 GHz and 2 mA / 2 V Outstanding Gms = 23 dB Noise Figure F = 0.95 dB For oscillators up to 15 GHz 2 Transition frequency fT = 45 GHz 1 VPS05605 Gold metallization for high reliability	Original	PDF	BFP520 VPS05605 OT343 50Ohm 45GHz -j100 Aug-09-2001 BFP520 VPS05605
Untitled Abstract: No abstract text available Text: BFP520F Low Noise Silicon Bipolar RF Transistor • For highest gain and low noise amplifier 3 Outstanding Gms = 22.5 dB at 1.8 GHz 2 4 1 Minimum noise figure NFmin = 0.95 dB at 1.8 GHz • For oscillators up to 15 GHz • Transition frequency fT = 45 GHz	Original	PDF	BFP520F AEC-Q101
BFP520F Abstract: No abstract text available Text: SIEGET 45 BFP520F NPN Silicon RF Transistor Preliminary data XYs For highest gain low noise amplifier at 1.8 GHz and 2 mA / 2 V 3 Outstanding Gms = 23 dB 2 4 Noise Figure F = 0.95 dB 1 For oscillators up to 15 GHz Transition frequency fT = 45 GHz TSFP-4	Original	PDF	BFP520F Dec-07-2001 BFP520F
Untitled Abstract: No abstract text available Text: SIEGET 45 BFP520F NPN Silicon RF Transistor Preliminary data XYs For highest gain low noise amplifier at 1.8 GHz and 2 mA / 2 V 3 Outstanding Gms = 23 dB 2 4 Noise Figure F = 0.95 dB 1 For oscillators up to 15 GHz Transition frequency fT = 45 GHz TSFP-4	Original	PDF	BFP520F
Untitled Abstract: No abstract text available Text: SIEGET 45 BFP520F NPN Silicon RF Transistor Preliminary data XYs For highest gain low noise amplifier at 1.8 GHz and 2 mA / 2 V 3 Outstanding Gms = 23 dB 2 4 Noise Figure F = 0.95 dB 1 For oscillators up to 15 GHz Transition frequency fT = 45 GHz TSFP-4	Original	PDF	BFP520F
Untitled Abstract: No abstract text available Text: BFP520 Low Noise Silicon Bipolar RF Transistor • Low noise amplifier designed for low voltage 3 applications, ideal for 1.2 V or 1.8 V supply 2 4 voltage. Supports Vcc = 2.9 V with enough 1 external collector resistance. • High gain and low noise at high frequencies	Original	PDF	BFP520 AEC-Q101 OT343
BFP520 application notes Abstract: SIEGET 45 Text: SIEGET 45 BFP520 NPN Silicon RF Transistor 3 For highest gain low noise amplifier 4 at 1.8 GHz and 2 mA / 2 V Outstanding Gms = 23 dB Noise Figure F = 0.95 dB For oscillators up to 15 GHz 2 Transition frequency fT = 45 GHz 1 VPS05605 Gold metallization for high reliability	Original	PDF	BFP520 VPS05605 OT343 BFP520 application notes SIEGET 45
Untitled Abstract: No abstract text available Text: BFP520F NPN Silicon RF Transistor* • For highest gain low noise amplifier 3 at 1.8 GHz and 2 mA / 2 V 2 4 1 Outstanding Gms = 23 dB Noise Figure F = 0.95 dB • For oscillators up to 15 GHz • Transition frequency f T = 45 GHz • Gold metallisation for high reliability	Original	PDF	BFP520F
BFP520 Abstract: 702 Z TRANSISTOR SIEMENS BFP520 Text: Application Note No. 051 Discrete & RF Semiconductors R. Sedlmaier, HL HF AT SIEGET45 - Low Noise Amplifier with BFP520 Transistor at 1.9 GHz This application note describes an example of a Low Noise Amplifier with the BFP520 5th Generation, SOT343 SIEGET 45-Line. Improved performance in Gain	Original	PDF	BFP520 OT343) 45-Line. 15dBm) BFP520 702 Z TRANSISTOR SIEMENS BFP520
BFP520 Abstract: BGA420 Text: BFP520 NPN Silicon RF Transistor • For highest gain low noise amplifier 3 at 1.8 GHz and 2 mA / 2 V 2 4 Outstanding Gms = 23.5 dB 1 Noise Figure F = 0.95 dB • For oscillators up to 15 GHz • Transition frequency f T = 45 GHz • Gold metallisation for high reliability	Original	PDF	BFP520 OT343 BFP520 BGA420

bfp520 Abstract: BFP520 application notes AN077 BGA420 spice gummel Text: BFP520 NPN Silicon RF Transistor • Low noise amplifier designed for low voltage 3 applications, ideal for 1.2 V or 1.8 V supply 2 4 voltage. Supports 2.9 V V cc with enough external 1 collector resistance. • High gain and low noise at high frequencies	Original	PDF	BFP520 OT343 bfp520 BFP520 application notes AN077 BGA420 spice gummel
transistor B 540 Abstract: TRANSISTOR 1221 sot173 SOT-173 wideband transistor sot173 transistor 541 SOT173 RF transistor Text: O bjective specification P h ilip s S em icon du ctors T ^ 3 /-2 NPN 9 GHz wideband transistor PHILIPS INTERNATIONAL FEATURES SbE / BFP520 7110fl2b 0045303 7T3 H P H IN PINNING DESCRIPTION PIN • High power gain • Low noise figure 1 collector • High transition frequency	OCR Scan	PDF	BFP520 OT173X) BFP520 OT173 OT173X 7110fl2b MBC860 OT173. transistor B 540 TRANSISTOR 1221 sot173 SOT-173 wideband transistor sot173 transistor 541 SOT173 RF transistor
SOT173 Abstract: BFP520 MBB866 mbc860 wideband transistor sot173 Text: Philips Semiconductors Hi bbS3T31 GOBIMTM ITÒ APX Objective specification NPN 9 GHz wideband transistor ^ _ FEATURES PINNING BFP520 N AnER PHILIPS/DISCRETE DESCRIPTION • High power gain PIN • Low noise figure 1 collector • High transition frequency	OCR Scan	PDF	BFP520 OT173X) BFP520 OT173 OT173X MBC860 OT173. OT173X. 900MHz. SOT173 MBB866 mbc860 wideband transistor sot173
Untitled Abstract: No abstract text available Text: • I P h ilip s S em iconductors ^ 5 3 ^ 3 1 DO Sm ^M n fl M APX O bje ctive sp e c ific a tio n NPN 9 GHz wideband transistor ^ ^ FEATURES BFP520 N a HER PHILIPS/DISCRETE PINNING • High power gain PIN • Low noise figure 1 O’ n DESCRIPTION collector	OCR Scan	PDF	BFP520 OT173X) BFP520 bbS3T31
Untitled Abstract: No abstract text available Text: bbSBTBl 003221b A23 Philips Semiconductors Product specification W A P X NPN 9 GHz wideband transistor crystal X3A-BFR520 . . N AMER PHILIPS/DISCRETE DESCRIPTION b'lE D MECHANICAL DATA NPN crystal used in BFR520 SOT23 , BFG520 (SOT143) and BFP520 (SOT173). Crystals are supplied	OCR Scan	PDF	003221b X3A-BFR520 BFR520 BFG520 OT143) BFP520 OT173)
BFG520 Abstract: X3A-BFR520 SOT173 BFP520 BFR520 SOT-173 Text: P h ilip s S em icon du ctors Produ ct specification •T'3 1-9-0 NPN 9 GHz wideband transistor crystal X3A-BFR520 StE » PHILIPS INTERNATIONAL DESCRIPTION 711DfiEb DDMblOb 2b5 M E C H A N IC A L DATA NPN crystal used in BFR520 SOT23 , BFG520 (SOT143) and BFP520 (SOT173). Crystals are supplied	OCR Scan	PDF	X3A-BFR520 BFR520 BFG520 OT143) BFP520 OT173) X3A-BFR520 711DfiEb RV-3-5-52/733 BFG520 SOT173 BFP520 BFR520 SOT-173
BFP521V Abstract: BFP519 BFP520 tranzystor BFP521 T018 Scans-0015604 tranzystory TEWA Text: T R A N Z Y S T O R Y n-p-n BFP519, BFP520 i BFP521 23-74/2 SWW 1156-213 Typ BFP519 BFP520 B F P 52J Napiqcie kolektor-baza Napi^cie kolektor-em iter Napi^cie em iter-baza Prqd kolektora P rg d szczytowy kolektora P r^d bazy Moc kolektora T em peratura zl^cza	OCR Scan	PDF	BFP519, BFP520 BFP521 wsp61czynnika BFP521V BFP519 tranzystor BFP521 T018 Scans-0015604 tranzystory TEWA
SOT-173 Abstract: sot173 BFP96 BFQ32C Text: 55 RF/Microwave Devices RF W ideband Transistors cont. Type No. BFG198 BFG505 BFG505/X BFG505/XR BFG520 BFG520/X BFG520/XR BFG540 BFG540/X BFG540/XR BFG541 BFG590 BFG590/X BFG590/XR BFG591 BFG621 BFG741 BFP90A BFP91A BFP96 BFP505 BFP520 BFP540 BFQ17 BFQ18A	OCR Scan	PDF	BFG198 BFG505 BFG505/X BFG505/XR BFG520 BFG520/X BFG520/XR BFG540 BFG540/X BFG540/XR SOT-173 sot173 BFP96 BFQ32C
SOT173 Abstract: BFR520 transistor BFG520 BFP520 BFR520 X3A-BFR520 Text: bbSBTBl 0G3221b ÔE3 W A P X Philips Semiconductors Product specification NPN 9 GHz wideband transistor crystal X3A-BFR520 N AMER PHILIP S/D ISCRETE DESCRIPTION b'IE D MECHANICAL DATA NPN crystal used in BFR520 SOT23 , BFG520 (SOT143) and BFP520 (SOT173). Crystals are supplied	OCR Scan	PDF	0G32Slb X3A-BFR520 BFR520 BFG520 OT143) BFP520 OT173) X3A-BFR520 URV-3-5-52/733 SOT173 BFR520 transistor BFG520 BFP520 BFR520
SOT173 Abstract: BFP520 BFP520 application notes sot-173 NPN planar RF transistor SOT173 RF transistor Text: Objective specification Philips Semiconductors T^ 3/-Z / NPN 9 GHz wideband transistor PHILIPS INTERNATIONAL FEATURES SbE D BFP520 7110fl2b 0045303 7T3 H P H IN PINNING DESCRIPTION PIN • High power gain • Low noise figure 1 collector • High transition frequency	OCR Scan	PDF	BFP520 OT173X) BFP520 OT173 OT173X 711002b MBCB60 OT173. OT173X. MBB867 SOT173 BFP520 application notes sot-173 NPN planar RF transistor SOT173 RF transistor

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Infineon Technologies AG BFP520H6327XTSA1

Rochester Electronics LLC BFP520FE6327

Infineon Technologies AG BFP-520F-E6327

Infineon Technologies AG BFP520E6327BTSA1

Rochester Electronics LLC BFP520FH6327XTSA1

BFP520 Datasheets (21)

BFP520 Datasheets Context Search

BFP520F

IC 7481 pin configuration

AN051A

BFP520F

BFP520

Untitled

BFP520F

Untitled

Untitled

Untitled

BFP520 application notes

Untitled

BFP520

BFP520

bfp520

transistor B 540

SOT173

Untitled

Untitled

BFG520

BFP521V

SOT-173

SOT173

SOT173