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    BFQ 58 Search Results

    BFQ 58 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BFQ58 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF

    BFQ 58 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    5252 F ic

    Abstract: BFQ 540 application IC 7560 transistor BFQ 263 5252 F 1009
    Text: BFQ 65 TELEFUNKEN Semiconductors Silicon NPN Planar RF Transistor Applications RF-amplifier up to GHz range specially for wide band antenna amplifier. Features D High power gain D Low noise figures D High transition frequence 3 2 94 9308 1 Marking: BFQ 65


    Original     		PDF D-74025 5252 F ic BFQ 540 application IC 7560 transistor BFQ 263 5252 F 1009

    temic 0675

    Abstract: BFQ 540 application
    Text: BFQ 67 TELEFUNKEN Semiconductors Silicon NPN Planar RF Transistor Applications Low noise small signal amplifiers up to 2 GHz. This transistor has superior noise figure and associated gain performance at UHF, VHF, and microwave frequencies. Features D Small feedback capacitance


    Original     		PDF D-74025 temic 0675 BFQ 540 application

    BFQ71

    Abstract: Q62702-F775 bfq 96
    Text: NPN Silicon RF Transistor BFQ 71 ● For broadband amplifiers up to 2 GHz and fast non-saturated switches at collector currents from 1 mA to 20 mA. ● Hermetically sealed ceramic package. ● HiRel/Mil screening available. ● CECC-type available: CECC 50002/260.


    Original     		PDF Q62702-F775 BFQ71 Q62702-F775 bfq 96

    BFQ 85

    Abstract: RF NPN POWER TRANSISTOR 2.5 GHZ marking code 359 sot-23 Q62702-F659 BFQ29P z0 SOT23
    Text: NPN Silicon RF Transistor BFQ 29P ● For low-noise IF and broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA. ● CECC-type available: CECC 50002/258. ESD: Electrostatic discharge sensitive device, observe handling precautions! Type


    Original     		PDF Q62702-F659 OT-23 BFQ 85 RF NPN POWER TRANSISTOR 2.5 GHZ marking code 359 sot-23 Q62702-F659 BFQ29P z0 SOT23

    z0 150 81

    Abstract: transistor s11 s12 s21 s22 Q62702-F774 bfq 85
    Text: NPN Silicon RF Transistor BFQ 70 For low-noise IF and broadband amplifiers in antenna and telecommunications systems at collector currents from 2 mA to 20 mA. ● Hermetically sealed ceramic package ● HiRel/Mil screening available. ● ESD: Electrostatic discharge sensitive device, observe handling precautions!


    Original     		PDF Q62702-F774 z0 150 81 transistor s11 s12 s21 s22 Q62702-F774 bfq 85

    Q62702-F788

    Abstract: No abstract text available
    Text: NPN Silicon RF Transistor BFQ 74 ● For low-noise amplifiers in the GHz range, and broadband analog and digital applications in telecommunications systems at collector currents from 1 mA to 25 mA. ● Hermetically sealed ceramic package. ● HiRel/Mil screening available.


    Original     		PDF Q62702-F788 Q62702-F788

    temic 0675

    Abstract: MARKING ra BFQ 540 application Telefunken 2360 telefunken ra 100 BFQ 244
    Text: BFQ 81 TELEFUNKEN Semiconductors Silicon NPN Planar RF Transistor Applications RF amplifier up to 2 GHz, especially for mobile telephone. Features D Small feedback capacitance D Low noise figure D Low cross modulation 1 2 3 94 9280 Marking: RA Plastic case SOT 23


    Original     		PDF D-74025 temic 0675 MARKING ra BFQ 540 application Telefunken 2360 telefunken ra 100 BFQ 244

    k 1191

    Abstract: Z0 607 MA GP 652 Q62702-F1189
    Text: NPN Silicon RF Transistor BFQ 82 ● For low-noise, high-gain amplifiers up to 2 GHz. ● Linear broadband applications at collector currents up to 40 mA. ● Hermetically sealed ceramic package. ● fT = 8 GHz F = 1.1 dB at 800 MHz ESD: Electrostatic discharge sensitive device, observe handling precautions!


    Original     		PDF Q62702-F1189 k 1191 Z0 607 MA GP 652 Q62702-F1189

    BFQ72

    Abstract: Q62702-F776 s parameters transistor ac 151
    Text: NPN Silicon RF Transistor BFQ 72 ● For low-distortion broadband amplifiers up to 2 GHz at collector currents from 10 mA to 30 mA. ● Hermetically sealed ceramic package. ● HiRel/Mil screening available. ● CECC-type available: CECC 50002/263. ESD: Electrostatic discharge sensitive device, observe handling precautions!


    Original     		PDF Q62702-F776 BFQ72 Q62702-F776 s parameters transistor ac 151

    BFR 965

    Abstract: mpsa 46 BAW 62 SOT23 4148 SOD-123 bc 544 BRF91A smd bf MPS 808 BC 241 BFS 505 SMD
    Text: Cross Reference Conventional Devices to SMD Conventional Devices SMDPackages Conventional Devices SOD-123 SMDPackage Conventional Devices SOT-23 (cont’d) SMDPackage SOT-23 (cont’d) BA 282 BA 582 BB 304 BB 804 MPSA 05 SMBTA 05 BA 389 BA 585 BC 337 BC 817


    Original     		PDF OD-123 OT-23 OT-143 OT-89 BFR 965 mpsa 46 BAW 62 SOT23 4148 SOD-123 bc 544 BRF91A smd bf MPS 808 BC 241 BFS 505 SMD

    BFQ60

    Abstract: BI10-M30T-AP6X Q62702-F655 bfq 85 Siemens Microwave S12PS2
    Text: 2SC D m fl23Sb05 QQQ4b43 T H S I E G — *- — — • » « * w r i u u _ Low Noise NPN Silicon Microwave Transistor BFQ 60 up to 2 GHz_T ?sr. D '7 ^ 3 / - < 3 3 _ SIEMENS AKTIENGESELLSCHAF BFQ 60 is a bipolar silicon NPN microwave transistor in hermetically sealed metal


    OCR Scan     		PDF fl23Sb05 QQ04b43 -TZ3/-33_ Q62702-F655 fl23SbOS BFQ60 BFQ60 BI10-M30T-AP6X Q62702-F655 bfq 85 Siemens Microwave S12PS2

    Transistor C G 774 6-1

    Abstract: C G 774 6-1 a/Transistor C G 774 6-1 RLF100-11/12/Transistor C G 774 6-1
    Text: 5SE D • A23StiGS dG04hlt. 7 ■ S IE G .* 7-^ Low Noise NPN Silicon Microwave Transistor BFQ 28 up to 4 GHz SIEMENS AKTIEN GESELLSCH AF _ BFQ 28 is a bipolar silicon NPN microwave transistor in hermetically sealed metal ceramic 100 mil package similar to TO 120. State-of-the-art manufacturing methods


    OCR Scan     		PDF A23StiGS dG04hlt. Q62702-F527 235b05 000Mb22 BFQ28 Transistor C G 774 6-1 C G 774 6-1 a/Transistor C G 774 6-1 RLF100-11/12/Transistor C G 774 6-1

    BFQ transistors

    Abstract: BFQ transistors 98 BFQ 58 BFQ57 BFQ196 bfq58 b20200 bfq59 siemens 350 98 5925B
    Text: T-3 I"Oí SIE M EN S A K T I E N G E S E L L S C H A F 47E D • ñ 2 3 S bQ S G Ü 5 b 57 ô 2 « S I E G HF-Bipolar-Transistoren / RF Bipolar Transistors Metal Ceramic Package NPN ID (II B B □ B □ 'c P,o. h V mA mW GHz dB BFQ 57 BFQ 58 16 16 35 30


    OCR Scan     		PDF fi23SbQS GD5b57fl O-117 BFQ transistors BFQ transistors 98 BFQ 58 BFQ57 BFQ196 bfq58 b20200 bfq59 siemens 350 98 5925B

    BFQ 58

    Abstract: No abstract text available
    Text: SIEM ENS NPN Silicon RF Transistor BFQ 29P • For low-noise IF and broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA. S CECC-type available: CECC 50002/258. ESD: Electrostatic discharge sensitive device, observe handling precautions!


    OCR Scan     		PDF Q62702-F659 OT-23 fi23SbDS BFQ 58

    zo 103 ma

    Abstract: transistor ZO 103 MA siemens OF IC 741 SS 424 02 31 zo 103 ma 75 750 MARKING CODE F5T Q62702-F1104 BFQ 51 ZO 103 NA BFQ73S
    Text: SIEMENS NPN Silicon RF Transistor BFQ 73S • For low-noise, low-distortion broadband amplifiers in antenna and telecommunications systems up to 2 GHz at collector currents from 10 mA to 70 mA. • Hermetically sealed ceramic package. • HiRel/Mil screening available.


    OCR Scan     		PDF vce05181 Q62702-F1104 A23Sb05 DDb71bS zo 103 ma transistor ZO 103 MA siemens OF IC 741 SS 424 02 31 zo 103 ma 75 750 MARKING CODE F5T BFQ 51 ZO 103 NA BFQ73S

    dm 0765

    Abstract: BFQ196 siemens DM 321 VCE0518I BFQ 244 cerec
    Text: SIEMENS BFQ 196 NPN Silicon RF Transistor Prelim inary Data • For low-noise, low-distortion broadband amplifiers in antenna and telecommunications systems up to 1.5 GHz at collector currents from 20 mA to 80 mA. 3 J • f t = 7.5 GHz F = 1.3 dB at 900 MHz


    OCR Scan     		PDF Q62702-F1348 fl235b05 00b7253 dm 0765 BFQ196 siemens DM 321 VCE0518I BFQ 244 cerec

    ZS 633

    Abstract: ZS 1052 AC cerec BFQ645 617 300 MARKING 7C
    Text: SIEM EN S NPN Silicon RF Transistor BFQ 645 Preliminary Data • For low-noise, high-gain amplifiers and medium power oscillators at collector currents up to 20 mA. • fr = 9 GHz F = 1 .9 d B a t2 G H z ESD: Electrostatic discharge sensitive device, observe handling precautions!


    OCR Scan     		PDF vce05181 Q62702-F1283 235bQS 00b72b0 ZS 633 ZS 1052 AC cerec BFQ645 617 300 MARKING 7C

    BFQ28

    Abstract: Q62702-F527 CJCO D 843 Transistor
    Text: 5SE D fl23Sfc.GS aüG4hlt, 7 SIEG T- ?t^/ST BFQ28 Low Noise NPN Silicon Microwave Transistor up to 4 GHz SIEMENS AKTIENGESELLSCHAF BFQ 2 8 is a bipolar silicon NPN microwave transistor in hermetically sealed metal ceramic 100 mil package similar to TO 120. State-of-the-art manufacturing methods


    OCR Scan     		PDF fl23Sfc Q62702-F527 BFQ28 Q62702-F527 CJCO D 843 Transistor

    st ae gp 446

    Abstract: AE GP 532 AE GP 531 ae gp 447 592/diode gp 421
    Text: NPN Silicon RF Transistor BFQ 81 • For low -noise am plifiers up to 2 GHz and broadband analog and digital applications in telecom m unications system s at co lle cto r currents from 0.5 to 20 mA. £ C EC C -type available: CECC 50002/257. ESD: E lectrostatic discharge sensitive device, observe handling precautions!


    OCR Scan     		PDF OT-23 st ae gp 446 AE GP 532 AE GP 531 ae gp 447 592/diode gp 421

    Untitled

    Abstract: No abstract text available
    Text: 32E D • 623b320 QDlblSl T « S I P NPN Silicon RF Transistor o , .t-. BFQ 29P SIEMENS/ SPCLi SEMICONDS _ • For low-noise IF and broadband amplifiers up to 1 GHz at collector currents from 1 to 20 mA. £ CECC-type available: CECC 50002/258. ESD: Electrostatic discharge sensitive device, observe handling precautions!


    OCR Scan     		PDF 623b320 BFQ29P 62702-F OT-23 /o-20m

    BFP29

    Abstract: BFP35A BFQ77 BFP17 BFQ57 BFQ58 BFT65 BFQ 58 SOT-89 smd marking CF BFT99A
    Text: SIEMENS AKTIENGESELLSCHAF 03E I Bi ê23SbO S QDlSb7M T M S IE G • : Silicon Bipolar Transistors M etal C eram ic Packages Max. r atings ^CEO Ic Pto. V mA mW Chara steristic:s at Ta = 25° C F fj f Ic VcE GHz dB mA V GHz N N N 16 16 20 35 30 35 450 450 700


    OCR Scan     		PDF fi23SbQS 001Sb74 O-117 BFT98B BFT99A BFR15A, BFS55A, BFP29 BFP35A BFQ77 BFP17 BFQ57 BFQ58 BFT65 BFQ 58 SOT-89 smd marking CF

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors ^53^31 0031521 m b B i APX Product specification PNP 5 GHz wideband transistor . — — — BFQ23C i N A-flER PHILIPS/DISCRETE DESCRIPTION b'lE T> PINNING PNP transistor in hermetically-sealed, sub-miniature, SOT173 and SOT173X micro-stripline envelopes. It is


    OCR Scan     		PDF BFQ23C OT173 OT173X prop56

    sot-23 MARKING CODE ZA

    Abstract: BFQ29P
    Text: NPN Silicon RF Transistor BFQ29P • For low-noise IF and broadband amplifiers up to 1 GHz at collector currents from 1 to 20 mA. E CECC-type available: CECC 50002/258. ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking


    OCR Scan     		PDF BFQ29P 62702-F sot-23 MARKING CODE ZA BFQ29P

    ph 4148

    Abstract: f494 ph+4148+zener+diode PXTA14 BC546 SMD SMD BC547 BC327/BC517 BC327-40 SMD BST74 BFG 71
    Text: Philips Semiconductors Surface Mounted Semiconductors Conversion List CONVERSION LIST FROM LEADED TO SMD TYPE LEADED SMD LEADED SMD B A 2 43 BA T18 BA W 62 BAW 56 B A 3 14 B A S 17 BA W 62 BAW 56W B A 4 80 BA T17 B A X 12 BAS29 BA481 BA T17 B A X 12 BA S31


    OCR Scan     		PDF BAS29 BA481 BBY31 BAT81 BAS81 BBY40 BC847 BAT54 BC847A BT2907 ph 4148 f494 ph+4148+zener+diode PXTA14 BC546 SMD SMD BC547 BC327/BC517 BC327-40 SMD BST74 BFG 71