5252 F ic
Abstract: BFQ 540 application IC 7560 transistor BFQ 263 5252 F 1009
Text: BFQ 65 TELEFUNKEN Semiconductors Silicon NPN Planar RF Transistor Applications RF-amplifier up to GHz range specially for wide band antenna amplifier. Features D High power gain D Low noise figures D High transition frequence 3 2 94 9308 1 Marking: BFQ 65
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D-74025
5252 F ic
BFQ 540 application
IC 7560
transistor BFQ 263
5252 F 1009
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temic 0675
Abstract: BFQ 540 application
Text: BFQ 67 TELEFUNKEN Semiconductors Silicon NPN Planar RF Transistor Applications Low noise small signal amplifiers up to 2 GHz. This transistor has superior noise figure and associated gain performance at UHF, VHF, and microwave frequencies. Features D Small feedback capacitance
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D-74025
temic 0675
BFQ 540 application
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BFQ71
Abstract: Q62702-F775 bfq 96
Text: NPN Silicon RF Transistor BFQ 71 ● For broadband amplifiers up to 2 GHz and fast non-saturated switches at collector currents from 1 mA to 20 mA. ● Hermetically sealed ceramic package. ● HiRel/Mil screening available. ● CECC-type available: CECC 50002/260.
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Q62702-F775
BFQ71
Q62702-F775
bfq 96
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z0 150 81
Abstract: transistor s11 s12 s21 s22 Q62702-F774 bfq 85
Text: NPN Silicon RF Transistor BFQ 70 For low-noise IF and broadband amplifiers in antenna and telecommunications systems at collector currents from 2 mA to 20 mA. ● Hermetically sealed ceramic package ● HiRel/Mil screening available. ● ESD: Electrostatic discharge sensitive device, observe handling precautions!
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Q62702-F774
z0 150 81
transistor s11 s12 s21 s22
Q62702-F774
bfq 85
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Q62702-F788
Abstract: No abstract text available
Text: NPN Silicon RF Transistor BFQ 74 ● For low-noise amplifiers in the GHz range, and broadband analog and digital applications in telecommunications systems at collector currents from 1 mA to 25 mA. ● Hermetically sealed ceramic package. ● HiRel/Mil screening available.
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Q62702-F788
Q62702-F788
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k 1191
Abstract: Z0 607 MA GP 652 Q62702-F1189
Text: NPN Silicon RF Transistor BFQ 82 ● For low-noise, high-gain amplifiers up to 2 GHz. ● Linear broadband applications at collector currents up to 40 mA. ● Hermetically sealed ceramic package. ● fT = 8 GHz F = 1.1 dB at 800 MHz ESD: Electrostatic discharge sensitive device, observe handling precautions!
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Q62702-F1189
k 1191
Z0 607 MA GP 652
Q62702-F1189
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BFQ72
Abstract: Q62702-F776 s parameters transistor ac 151
Text: NPN Silicon RF Transistor BFQ 72 ● For low-distortion broadband amplifiers up to 2 GHz at collector currents from 10 mA to 30 mA. ● Hermetically sealed ceramic package. ● HiRel/Mil screening available. ● CECC-type available: CECC 50002/263. ESD: Electrostatic discharge sensitive device, observe handling precautions!
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Q62702-F776
BFQ72
Q62702-F776
s parameters
transistor ac 151
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BFR 965
Abstract: mpsa 46 BAW 62 SOT23 4148 SOD-123 bc 544 BRF91A smd bf MPS 808 BC 241 BFS 505 SMD
Text: Cross Reference Conventional Devices to SMD Conventional Devices SMDPackages Conventional Devices SOD-123 SMDPackage Conventional Devices SOT-23 (cont’d) SMDPackage SOT-23 (cont’d) BA 282 BA 582 BB 304 BB 804 MPSA 05 SMBTA 05 BA 389 BA 585 BC 337 BC 817
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OD-123
OT-23
OT-143
OT-89
BFR 965
mpsa 46
BAW 62 SOT23
4148 SOD-123
bc 544
BRF91A
smd bf
MPS 808
BC 241
BFS 505 SMD
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BFQ60
Abstract: BI10-M30T-AP6X Q62702-F655 bfq 85 Siemens Microwave S12PS2
Text: 2SC D m fl23Sb05 QQQ4b43 T H S I E G — *- — — • » « * w r i u u _ Low Noise NPN Silicon Microwave Transistor BFQ 60 up to 2 GHz_T ?sr. D '7 ^ 3 / - < 3 3 _ SIEMENS AKTIENGESELLSCHAF BFQ 60 is a bipolar silicon NPN microwave transistor in hermetically sealed metal
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fl23Sb05
QQ04b43
-TZ3/-33_
Q62702-F655
fl23SbOS
BFQ60
BFQ60
BI10-M30T-AP6X
Q62702-F655
bfq 85
Siemens Microwave
S12PS2
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Transistor C G 774 6-1
Abstract: C G 774 6-1 a/Transistor C G 774 6-1 RLF100-11/12/Transistor C G 774 6-1
Text: 5SE D • A23StiGS dG04hlt. 7 ■ S IE G .* 7-^ Low Noise NPN Silicon Microwave Transistor BFQ 28 up to 4 GHz SIEMENS AKTIEN GESELLSCH AF _ BFQ 28 is a bipolar silicon NPN microwave transistor in hermetically sealed metal ceramic 100 mil package similar to TO 120. State-of-the-art manufacturing methods
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A23StiGS
dG04hlt.
Q62702-F527
235b05
000Mb22
BFQ28
Transistor C G 774 6-1
C G 774 6-1
a/Transistor C G 774 6-1
RLF100-11/12/Transistor C G 774 6-1
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zo 107 NA P 611
Abstract: TRANSISTOR 2SC 2026 642p 2sc 643
Text: 2SC D m fl23Sb05 QQQ4b43 T « S I E G — *- — — •» «* w n u u Low Noise NPN Silicon Microwave Transistor UJ? t 0 2 G H z ~ ?<5r. n^643 _ BFQ 60 D '7 ^ '3 l ~ £ 3 _ SIEMENS A K T IE NGES EL LS CH AF BFQ 60 is a bipolar silicon NPN microwave transistor in hermetically sealed metal
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fl23Sb05
QQQ4b43
Q62702-F655
023SbQS
BFQ60
zo 107 NA P 611
TRANSISTOR 2SC 2026
642p
2sc 643
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BFQ transistors
Abstract: BFQ transistors 98 BFQ 58 BFQ57 BFQ196 bfq58 b20200 bfq59 siemens 350 98 5925B
Text: T-3 I"Oí SIE M EN S A K T I E N G E S E L L S C H A F 47E D • ñ 2 3 S bQ S G Ü 5 b 57 ô 2 « S I E G HF-Bipolar-Transistoren / RF Bipolar Transistors Metal Ceramic Package NPN ID (II B B □ B □ 'c P,o. h V mA mW GHz dB BFQ 57 BFQ 58 16 16 35 30
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fi23SbQS
GD5b57fl
O-117
BFQ transistors
BFQ transistors 98
BFQ 58
BFQ57
BFQ196
bfq58
b20200
bfq59
siemens 350 98
5925B
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Untitled
Abstract: No abstract text available
Text: 35E D • 823b32Q QGlb'ìbS T « S I P NPN Silicon RF Transistor BFQ 81 SIEMENS/ SPCLi SEMICONDS _ • For low-noise amplifiers up to 2 GHz and broadband analog and digital applications in telecommunications systems at collector currents from 0.5 to 20 mA.
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823b32Q
62702-F1049
OT-23
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BFQ17P
Abstract: MARKING 7C MARKING 7A SOT89 BFQ 19 RF
Text: ÔS3SbGS 0D2M455 T 47E D ISIEG -T-33-CS NPN Silicon RF Transistor BFQ 17P — SIEMENS AKTIENGESELLSCHAF • For low-distortion broadband amplifiers up to 900 MHz at collector currents from 20 to 150 mA. Type Marking Ordering code tape and reel Package BFQ17P
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0D2M455
T-33-CS
BFQ17P
62702-F983
OT-89
623SbGS
005MMSÃ
T-33-Dr
MARKING 7C
MARKING 7A SOT89
BFQ 19 RF
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dm 0765
Abstract: BFQ196 siemens DM 321 VCE0518I BFQ 244 cerec
Text: SIEMENS BFQ 196 NPN Silicon RF Transistor Prelim inary Data • For low-noise, low-distortion broadband amplifiers in antenna and telecommunications systems up to 1.5 GHz at collector currents from 20 mA to 80 mA. 3 J • f t = 7.5 GHz F = 1.3 dB at 900 MHz
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Q62702-F1348
fl235b05
00b7253
dm 0765
BFQ196
siemens DM 321
VCE0518I
BFQ 244
cerec
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BFQ28
Abstract: Q62702-F527 CJCO D 843 Transistor
Text: 5SE D fl23Sfc.GS aüG4hlt, 7 SIEG T- ?t^/ST BFQ28 Low Noise NPN Silicon Microwave Transistor up to 4 GHz SIEMENS AKTIENGESELLSCHAF BFQ 2 8 is a bipolar silicon NPN microwave transistor in hermetically sealed metal ceramic 100 mil package similar to TO 120. State-of-the-art manufacturing methods
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fl23Sfc
Q62702-F527
BFQ28
Q62702-F527
CJCO
D 843 Transistor
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st ae gp 446
Abstract: AE GP 532 AE GP 531 ae gp 447 592/diode gp 421
Text: NPN Silicon RF Transistor BFQ 81 • For low -noise am plifiers up to 2 GHz and broadband analog and digital applications in telecom m unications system s at co lle cto r currents from 0.5 to 20 mA. £ C EC C -type available: CECC 50002/257. ESD: E lectrostatic discharge sensitive device, observe handling precautions!
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OT-23
st ae gp 446
AE GP 532
AE GP 531
ae gp 447
592/diode gp 421
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BFP29
Abstract: BFP35A BFQ77 BFP17 BFQ57 BFQ58 BFT65 BFQ 58 SOT-89 smd marking CF BFT99A
Text: SIEMENS AKTIENGESELLSCHAF 03E I Bi ê23SbO S QDlSb7M T M S IE G • : Silicon Bipolar Transistors M etal C eram ic Packages Max. r atings ^CEO Ic Pto. V mA mW Chara steristic:s at Ta = 25° C F fj f Ic VcE GHz dB mA V GHz N N N 16 16 20 35 30 35 450 450 700
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fi23SbQS
001Sb74
O-117
BFT98B
BFT99A
BFR15A,
BFS55A,
BFP29
BFP35A
BFQ77
BFP17
BFQ57
BFQ58
BFT65
BFQ 58
SOT-89 smd marking CF
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ph 4148
Abstract: f494 ph+4148+zener+diode PXTA14 BC546 SMD SMD BC547 BC327/BC517 BC327-40 SMD BST74 BFG 71
Text: Philips Semiconductors Surface Mounted Semiconductors Conversion List CONVERSION LIST FROM LEADED TO SMD TYPE LEADED SMD LEADED SMD B A 2 43 BA T18 BA W 62 BAW 56 B A 3 14 B A S 17 BA W 62 BAW 56W B A 4 80 BA T17 B A X 12 BAS29 BA481 BA T17 B A X 12 BA S31
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BAS29
BA481
BBY31
BAT81
BAS81
BBY40
BC847
BAT54
BC847A
BT2907
ph 4148
f494
ph+4148+zener+diode
PXTA14
BC546 SMD
SMD BC547
BC327/BC517
BC327-40 SMD
BST74
BFG 71
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5N521
Abstract: BFQ71 VCE05181 bfq 85 Q62702-F775 siemens Pm 90 87 transistor zo 103 MA 7S 714
Text: SIEMENS BFQ71 NPN Silicon RF Transistor • For broadband amplifiers up to 2 GHz and fast non-saturated switches at collector currents from 1 mA to 20 mA. • Hermetically sealed ceramic package. • HiRel/Mil screening available. B CECC-type available: CECC 50002/260.
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BFQ71
Q62702-F775
0235bG5
DGb713S
5N521
VCE05181
bfq 85
siemens Pm 90 87
transistor zo 103 MA 7S 714
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TRANSISTOR 131-6 BJ 946
Abstract: transistor bc 564 transistor Bc 949 datenblatt TRANSISTOR BC 545 MARKING CODE AGS bsp 2000 siemens datenbuch bft99 mmic SMD amplifier marking code 19s TRANSISTOR SMD MARKING CODE bc ru DIODE smd marking 22-16
Text: Typeniibersicht Selection Guide Bestellnummern Ordering Codes Bestempelung Marking Catalog Technische Angaben « Technical Information Qualitatsangaben Quality Specification Gehause Package Outlines Verarbeitungshinweise Mounting Instructions Verpackungshinweise
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B3-B3715
B3715-X-X-7600
TRANSISTOR 131-6 BJ 946
transistor bc 564
transistor Bc 949 datenblatt
TRANSISTOR BC 545
MARKING CODE AGS bsp 2000
siemens datenbuch
bft99
mmic SMD amplifier marking code 19s
TRANSISTOR SMD MARKING CODE bc ru
DIODE smd marking 22-16
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BFT65
Abstract: D1279 Siemens 1414 D1275 germanium Germanium drift transistor diode a811 Siemens Halbleiter germanium transistor legiert
Text: Table of Contents Selection Guide Ordering Codes Inhaltsverzeichnis Typeniibersicht Bestellnummern Scope of Applications Technical Information Quality Specifications Einsatzhinweise Technische Angaben Qualitatsangaben Package Outlines Mounting Instructions
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RPY 86
Abstract: valvo halbleiter RPY94 CQY 24 BV EI 30-20 3001 LDR 03 diode byx 64 600 valvo transistoren KP101A BAV99-1
Text: Elektronik. Wir bauen die Elemente. v a i v D Halbleiterbauelemente Produktprogramm DH, April 1984 Elektronik. Wir bauen die Elemente Unser Arbeitsgebiet - besonders die Mikroelektronik - entwickelt sich immer rascher zum Motor für eine Vielzahl von Innovationen. Mit gründ
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LDR 03
Abstract: valvo halbleiter LDR -03 cny63 CNY62 BYX 71 800 CXY19 VALVO ldr 07 BZW10-12
Text: Halbleiter bauelemente • 1981/82 N, Bauelemente l m für die gesamte i f Elektronik V A L V O Valvo bietet das breiteste Produktprogram m an Bauelementen für die gesamte Elektronik in Deutschland: Bildröhren A blenkteile Tuner Lautsprecher Transform atoren
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