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    BFR52 Search Results

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    BFR52 Price and Stock

    NXP Semiconductors BFR520,235

    RF TRANS NPN 15V 9GHZ TO236AB
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    NXP Semiconductors BFR520,215

    RF TRANS NPN 15V 9GHZ TO236AB
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    BFR520,215 Digi-Reel 1
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    NXP Semiconductors BFR520T,115

    RF TRANS NPN 15V 9GHZ SC75
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    BFR520T,115 Reel
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    EBV Elektronik BFR520T,115 54 Weeks 3,000
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    Apex Tool Group LLC CSBFR-524

    Crescent 5-3/8" 24T Framing Blade/Apex |Apex CSBFR-524
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    Newark CSBFR-524 Bulk 26 5
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    Philips Semiconductors BFR520

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    Bristol Electronics BFR520 1,500
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    BFR520 940
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    Quest Components BFR520 1,200
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    BFR520 752
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    BFR52 Datasheets (31)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BFR52 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    BFR52 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    BFR52 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    BFR52 Unknown Diode, Transistor, Thyristor Datasheets and more Scan PDF
    BFR52 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BFR52 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    BFR52 Semelab Transistor Selection Guide Scan PDF
    BFR52 Texas Instruments Discrete Devices 1978 Scan PDF
    BFR520 NXP Semiconductors BFR520 - NPN 9 GHz wideband transistor - @ f: 900 MHz; @ f1: 900 ; @ f2: 2000 ; @ IC: 20 mA; fT: 9 GHz; Frequency: 1.9 MHz; GUM @ f1: 15 dB; GUM @ f2: 9 dB; Gain @ 1.9 GHz: 10 dB; Gain @ 900 Mhz: 17 dB; IC: 70 mA; ITO: 26 dBm; Noise figure: Original PDF
    BFR520 Philips Semiconductors NPN 9 GHz Wideband Transistor Original PDF
    BFR520 Philips Semiconductors NPN 5 GHz wideband transistors Original PDF
    BFR520 Philips Semiconductors NPN 9 GHz Wideband Transistor Original PDF
    BFR520 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BFR520,215 NXP Semiconductors BFR520 - TRANSISTOR L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, PLASTIC, SST, 3 PIN, BIP RF Small Signal Original PDF
    BFR520,215 NXP Semiconductors NPN 9 GHz wideband transistor - @ f: 900 MHz; @ f1: 900 ; @ f2: 2000 ; @ IC: 20 mA; fT: 9 GHz; Frequency: 1.9 MHz; GUM @ f1: 15 dB; GUM @ f2: 9 dB; Gain @ 1.9 GHz: 10 dB; Gain @ 900 Mhz: 17 dB; IC: 70 mA; ITO: 26 dBm; Noise figure:; Package: SOT23 (TO-236AB); Container: Tape reel smd Original PDF
    BFR520,235 NXP Semiconductors BFR520 - NPN 9 GHz wideband transistor, SOT23 Package, Standard Marking, Reel Pack, SMD, Low Profile, Large Original PDF
    BFR520,235 NXP Semiconductors NPN 9 GHz wideband transistor - @ f: 900 MHz; @ f1: 900 ; @ f2: 2000 ; @ IC: 20 mA; fT: 9 GHz; Frequency: 1.9 MHz; GUM @ f1: 15 dB; GUM @ f2: 9 dB; Gain @ 1.9 GHz: 10 dB; Gain @ 900 Mhz: 17 dB; IC: 70 mA; ITO: 26 dBm; Noise figure:; Package: SOT23 (TO-236AB); Container: Tape reel smd Original PDF
    BFR520/C,215 NXP Semiconductors BFR520/C - NPN 9 GHz wideband transistor, SOT23 Package, Standard Marking, Reel Pack, SMD, Low Profile, 7" Reel Original PDF
    BFR520T NXP Semiconductors BFR520T - NPN 9 GHz wideband transistor - @ f1: 900 ; @ f2: 2000 ; @ IC: 70 mA; fT: 9 GHz; GUM @ f1: 15 dB; GUM @ f2: 9 dB; IC: 70 mA; ITO: 26 dBm; Noise figure: [email protected]@f1 dB; PL: 17 W; Ptot: 150 mW; Polarity: NPN Original PDF
    BFR520T Philips Semiconductors NPN 9 GHz wideband transistor Original PDF

    BFR52 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    RF TRANSISTOR 1.5 GHZ

    Abstract: RF NPN POWER TRANSISTOR 2.5 GHZ RF NPN POWER TRANSISTOR 3 GHZ zo 103 ma Types of Radar 1.2 ghz tuner radar circuit component transistor equivalent table MRA705 RF TRANSISTOR 2.5 GHZ s parameter
    Text: BFR520 NPN 9 GHz wideband transistor Rev. 03 — 1 September 2004 Product data sheet 1. Product profile 1.1 General description The BFR520 is an NPN silicon planar epitaxial transistor in a SOT23 plastic package. 1.2 Features • ■ ■ ■ High power gain


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    PDF BFR520 BFR520 RF TRANSISTOR 1.5 GHZ RF NPN POWER TRANSISTOR 2.5 GHZ RF NPN POWER TRANSISTOR 3 GHZ zo 103 ma Types of Radar 1.2 ghz tuner radar circuit component transistor equivalent table MRA705 RF TRANSISTOR 2.5 GHZ s parameter

    Transistor A111

    Abstract: No abstract text available
    Text: ^zmi-L.onau.cto'i , Una. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. Silicon NPN RF Transistor BFR520 DESCRIPTION • High Power Gain ^^ • High Current Gain Bandwidth Product SOT- 2 3 package


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    PDF BFR520 900MHz 150T150 Transistor A111

    bfr520

    Abstract: No abstract text available
    Text: SO T2 3 BFR520 NPN 9 GHz wideband transistor Rev. 4 — 13 September 2011 Product data sheet 1. Product profile 1.1 General description The BFR520 is an NPN silicon planar epitaxial transistor in a SOT23 plastic package. 1.2 Features and benefits   


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    PDF BFR520 BFR520

    MRC026

    Abstract: MRC025 BFR520T SC-75 mrc021 MRC027
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D173 BFR520T NPN 9 GHz wideband transistor Product specification Supersedes data of 1999 Nov 02 2000 Apr 03 NXP Semiconductors Product specification NPN 9 GHz wideband transistor BFR520T FEATURES DESCRIPTION • High power gain


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    PDF M3D173 BFR520T OT416 SC-75) MBK090 R77/02/pp13 MRC026 MRC025 BFR520T SC-75 mrc021 MRC027

    Untitled

    Abstract: No abstract text available
    Text: X3A-BFR520 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)15â V(BR)CBO (V)20 I(C) Max. (A)70m Absolute Max. Power Diss. (W) Minimum Operating Temp (øC) Maximum Operating Temp (øC)150õ I(CBO) Max. (A)50n @V(CBO) (V) (Test Condition)6


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    PDF X3A-BFR520

    15 w RF POWER TRANSISTOR NPN

    Abstract: RF NPN POWER TRANSISTOR 2.5 GHZ high gain low capacitance NPN transistor BFR520 transistor RF TRANSISTOR RF NPN POWER TRANSISTOR 3 GHZ RF frontend RF POWER TRANSISTOR NPN RF TRANSISTOR 1.5 GHZ BFR520
    Text: isc RF Product Specification INCHANGE Semiconductor isc Silicon NPN RF Transistor BFR520 DESCRIPTION •High Power Gain ·High Current Gain Bandwidth Product ·Low Noise Figure APPLICATIONS ·Designed for RF frontend in wideband applications in the GHz range,such as analog and digital cellular telephones,


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    PDF BFR520 900MHz S21e2 15 w RF POWER TRANSISTOR NPN RF NPN POWER TRANSISTOR 2.5 GHZ high gain low capacitance NPN transistor BFR520 transistor RF TRANSISTOR RF NPN POWER TRANSISTOR 3 GHZ RF frontend RF POWER TRANSISTOR NPN RF TRANSISTOR 1.5 GHZ BFR520

    BFR520

    Abstract: 900MHZ
    Text: BFR520 NPN 9 GHz RF Wideband Transistor COLLECTOR 3 P b Lead Pb -Free 1 BASE 2 SOT-23 FEATURES High power gain Low noise figure High transition frequency Gold metallization ensures excellent reliability. The transistor is encapsulated in a plastic SOT23 envelope.


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    PDF BFR520 OT-23 BFR520 06-Feb-07 OT-23 900MHZ

    Untitled

    Abstract: No abstract text available
    Text: SO T2 3 BFR520 NPN 9 GHz wideband transistor Rev. 4 — 13 September 2011 Product data sheet 1. Product profile 1.1 General description The BFR520 is an NPN silicon planar epitaxial transistor in a SOT23 plastic package. 1.2 Features and benefits   


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    PDF BFR520 BFR520

    Untitled

    Abstract: No abstract text available
    Text: BFR52 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)40 V(BR)CBO (V)40 I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)800m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)50nØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


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    PDF BFR52 Freq50M

    Untitled

    Abstract: No abstract text available
    Text: BFR520 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)15â V(BR)CBO (V)20 I(C) Max. (A)70m Absolute Max. Power Diss. (W)300m Minimum Operating Temp (øC) Maximum Operating Temp (øC)150õ I(CBO) Max. (A)50n @V(CBO) (V) (Test Condition)6


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    PDF BFR520

    Untitled

    Abstract: No abstract text available
    Text: BFR521 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)15â V(BR)CBO (V)20 I(C) Max. (A)70m Absolute Max. Power Diss. (W)300m Minimum Operating Temp (øC) Maximum Operating Temp (øC)175õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition)


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    PDF BFR521

    MRC026

    Abstract: MRC027
    Text: DISCRETE SEMICONDUCTORS DAT M3D173 BFR520T NPN 9 GHz wideband transistor Product specification Supersedes data of 1999 Nov 02 2000 Apr 03 NXP Semiconductors Product specification NPN 9 GHz wideband transistor BFR520T FEATURES DESCRIPTION • High power gain


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    PDF M3D173 BFR520T OT416 SC-75) MBK090 R77/02/pp13 MRC026 MRC027

    MRC027

    Abstract: MRC021 MRC025 BFR520T SC75 MRC028 MAM337
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D173 BFR520T NPN 9 GHz wideband transistor Preliminary specification 1999 Oct 18 Philips Semiconductors Preliminary specification NPN 9 GHz wideband transistor BFR520T PINNING FEATURES • High power gain PIN DESCRIPTION


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    PDF M3D173 BFR520T OT416 budgetnum/ed/pp12 MRC027 MRC021 MRC025 BFR520T SC75 MRC028 MAM337

    Untitled

    Abstract: No abstract text available
    Text: bbSBTBl 003221b A23 Philips Semiconductors Product specification W A P X NPN 9 GHz wideband transistor crystal X3A-BFR520 . . N AMER PHILIPS/DISCRETE DESCRIPTION b'lE D MECHANICAL DATA NPN crystal used in BFR520 SOT23 , BFG520 (SOT143) and BFP520 (SOT173). Crystals are supplied


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    PDF 003221b X3A-BFR520 BFR520 BFG520 OT143) BFP520 OT173)

    philips MATV amplifiers

    Abstract: MSB037 BFR521
    Text: Philips Semiconductors APX ^53*131 DDBISbfl bDD Preliminary specification NPN 9 GHz wideband transistor BFR521 N AMER PHIL I PS /D IS CRE TE FEATURES fc^E D PINNING • High power gain • Low noise figure 1 emitter • High transition frequency 2 collector


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    PDF BFR521 BFR521 MSB037 SQT103. philips MATV amplifiers MSB037

    transistor bf 422 NPN

    Abstract: BFR521 MSB037 NPN transistor mhz s-parameter transistor SOT103 SOT-103
    Text: Product specification Philips Semiconductors NPN 9 GHz wideband transistor BFR521 FEATURES DESCRIPTION • High power gain Silicon NPN planar epitaxial transistor in a plastic, 4-lead dual emitter SOT1Q3 package. • Low noise figure • High transition frequency


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    PDF BFR521 OT103 MSB037 OT103. 7110A2b transistor bf 422 NPN BFR521 MSB037 NPN transistor mhz s-parameter transistor SOT103 SOT-103

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors b t iS B 'lB l 0 0 3 n b fl bDD M i APX Preliminary specification NPN 9 GHz wideband transistor BFR521 N AMER PHILIPS/DISCRETE FEATURES b^E D ' PINNING • High power gain PIN • Low noise figure 1 emitter DESCRIPTION • High transition frequency


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    PDF BFR521 BFR521 MSB037 OT103.

    NFE 02 352

    Abstract: KMI 814 equivalent transistor 2 SA 1469 BFR520 BF 914 transistor MRA 843 MRA transistor transistor MJE -1103 ic LC 8712
    Text: 2 ÏÏ£ â S iïi£ S ïiiS 0 0 2 5 5 3 3 N A P IE R 7 flb • P H IL IP S /D IS C R E T E APX Product specification D fe,7 E NPN 9 GHz wideband transistor FEATURES ^ BFR520 PINNING • High power gain • Low noise figure • High transition frequency


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    PDF 0DES533 BFR520 BFR520 tra1000 NFE 02 352 KMI 814 equivalent transistor 2 SA 1469 BF 914 transistor MRA 843 MRA transistor transistor MJE -1103 ic LC 8712

    SOT173

    Abstract: BFR520 transistor BFG520 BFP520 BFR520 X3A-BFR520
    Text: bbSBTBl 0G3221b ÔE3 W A P X Philips Semiconductors Product specification NPN 9 GHz wideband transistor crystal X3A-BFR520 N AMER PHILIP S/D ISCRETE DESCRIPTION b'IE D MECHANICAL DATA NPN crystal used in BFR520 SOT23 , BFG520 (SOT143) and BFP520 (SOT173). Crystals are supplied


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    PDF 0G32Slb X3A-BFR520 BFR520 BFG520 OT143) BFP520 OT173) X3A-BFR520 URV-3-5-52/733 SOT173 BFR520 transistor BFG520 BFP520 BFR520

    smd transistor jst

    Abstract: BFG520 bfr505 BFG505 BFR50 BFR520 S221 Y parameters of transistors
    Text: Philips Semiconductors 900 MHz low noise amplifier demoboard Appl,cation report 9 00 MHz LOW NOISE AMPLIFIER DEMOBOARD Summary: The p erformance of wideband transistors, BFG505 BFG520, BFR505, BFR520 is demonstrated in a 900 MHz Low N oise A m p l i f i e r in the frontend of a subscriber handset, (i.e.


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    PDF BFG505 BFG520, BFR50 BFR520) OT323 OT143 BFG505: BFG505 OT143 LNA505 smd transistor jst BFG520 bfr505 BFR520 S221 Y parameters of transistors

    MRA705

    Abstract: BFR520 MSB003 BFR520 transistor
    Text: Philips Semiconductors Product specification NPN 9 GHz wideband transistor BFR520 telephones CT1, CT2, DECT, etc. , radar detectors, pagers and satellite TV tuners (SATV) and repeater amplifiers in fibre-optic systems. FEATURES • High power gain • Low noise figure


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    PDF BFR520 MSB003 MRA705 BFR520 transistor

    BFG520

    Abstract: BFQ67 Philips RF PREAMP cordless phone circuit BFG591 blt81 BFR93AW BFR93A sot103 phone circuit
    Text: RF/Microwave Devices RF Wideband Transistors RF Wideband Transistors for Pagers RF amp see Fig. 1 SOT323 SOT23 SOT143 BFR92AW BFS25A BFS505 BFS520 BFR92A BFT25A BFR505 BFR520 BFG92A/X BFG25A/X BFG505/X BFG520/X MIX see RF amp O SC see RF amp ante nna \ /


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    PDF OT323 BFR92AW BFS25A BFS505 BFS520 BFR92A BFT25A BFR505 BFR520 OT143 BFG520 BFQ67 Philips RF PREAMP cordless phone circuit BFG591 blt81 BFR93AW BFR93A sot103 phone circuit

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors bbS3T31 00ESS33 7flb APX N AflER PHI LIPS/DISCRETE NPN 9 GHz wideband transistor FEATURES Product specification b?E ]> BFR520 e PINNING • High power gain • Low noise figure PIN DESCRIPTION Code: N28 • High transition frequency


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    PDF bbS3T31 00ESS33 BFR520 BFR520

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification NPN 9 GHz wideband transistor crystal DESCRIPTION X3A-BFR520 MECHANICAL DATA NPN crystal used in BFR520 SOT23 , BFG520 (SOT143) and BFP520 (SOT173). Crystals are supplied as whole wafer, fully tested but unsawn.


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    PDF X3A-BFR520 BFR520 BFG520 OT143) BFP520 OT173) Fau134)