transistor bfr96
Abstract: BFR96 BFR964 RF NPN POWER TRANSISTOR 3 GHZ 200 watts motorola J50 datasheet for transistor bfr96 BFR96 TRANSISTOR BFR961 RF TRANSISTOR 1.5 GHZ BFR96 motorola
Text: MOTOROLA Order this document by BFR96/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon High-Frequency Transistor BFR96 The BFR96 transistor uses the same state–of–the–art microwave transistor chip which features fine–line geometry, ion–implanted arsenic emitters and gold
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BFR96/D
BFR96
BFR96
BFR96/D*
DEVICEBFR96/D
transistor bfr96
BFR964
RF NPN POWER TRANSISTOR 3 GHZ 200 watts
motorola J50
datasheet for transistor bfr96
BFR96 TRANSISTOR
BFR961
RF TRANSISTOR 1.5 GHZ
BFR96 motorola
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Untitled
Abstract: No abstract text available
Text: j. ts TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. BFR96 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • High Current-Gain - Bandwidth Product, fT = 4.5 GHz (typ) @ 1C = 50 mA •
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BFR96
10Vdc,
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bfr96
Abstract: No abstract text available
Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 BFR96 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • High Current-Gain – Bandwidth Product, fT = 4.5 GHz (typ) @ IC = 50 mA • Low Noise Figure – NF = 2.4 dB (typ) @ f = 0.5 GHz
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BFR96
bfr96
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BFR96
Abstract: s-parameter 2N3866A transistor bfr96 bfr96 equivalent 2N4427 equivalent bfr91 2N4427 2N5109 2N5179 2N6255 BFR96G
Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 BFR96 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS BFR96G * G Denotes RoHS Compliant, Pb Free Terminal Finish Features • High Current-Gain – Bandwidth Product, fT = 4.5 GHz (typ) @ IC = 50 mA
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BFR96
BFR96G
BFR96
s-parameter 2N3866A
transistor bfr96
bfr96 equivalent
2N4427 equivalent bfr91
2N4427
2N5109
2N5179
2N6255
BFR96G
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Untitled
Abstract: No abstract text available
Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 BFR96 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS BFR96G * G Denotes RoHS Compliant, Pb Free Terminal Finish Features • High Current-Gain – Bandwidth Product, fT = 4.5 GHz (typ) @ IC = 50 mA
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BFR96
BFR96G
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NE56755
Abstract: BFR96S HXTR4105 LT3203 HXTR3615 NE21960 j200 Avantek S MA42141 2sc240s
Text: UHF AND MICROWAVE TRANSISTORS Item Number Part Number Manufacturer Po Max W Gp V(BR)CBO (V) Po N.F. at. MatI. Toper Max °C (W) Package Style UHFIMicrowave Transistors, Bipolar NPN (Co nt' d) 5 10 15 20 25 30 35 40 45 50 BFQ73S BFR96 AT41435-5 AT420S5 AT414S5
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BFQ73S
BFR96
AT41435-5
AT420S5
AT414S5
AT41435-3
AT41470
AT41410
NE9S203
NE9S20S
NE56755
BFR96S
HXTR4105
LT3203
HXTR3615
NE21960
j200
Avantek S
MA42141
2sc240s
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BF907
Abstract: BF900 BF910 BF914 BF479S Siemens BF479T NE56755 BF540 BFQ14
Text: UHF AND MICROWAVE TRANSISTORS Item Number Part Number Manufacturer Po Max W Gp V(BR)CBO (V) Po N.F. at. MatI. Toper Max °C (W) Package Style UHFIMicrowave Transistors, Bipolar NPN (Co nt' d) 5 10 15 20 25 30 35 40 45 50 BFQ73S BFR96 AT41435-5 AT420S5 AT414S5
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BFQ73S
BFR96
AT41435-5
AT420S5
AT414S5
AT41435-3
AT41470
AT41410
NE9S203
NE9S20S
BF907
BF900
BF910
BF914
BF479S
Siemens
BF479T
NE56755
BF540
BFQ14
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BFR96
Abstract: BFR96 TRANSISTOR transistor bfr96
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon High-Frequency Transistor BFR96 The BFR96 transistor uses the same state-of-the-art microwave transistor chip which features fine-line geometry, ion-implanted arsenic emitters and gold top metallization. This transistor is intended for low-to-medium power amplifiers
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BFR96
BFR96
D10b3
BFR96 TRANSISTOR
transistor bfr96
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transistor bfr96
Abstract: SL 100 NPN Transistor BFR96 BFR96 LOW POWER TRANSISTOR transistor 936 M8B916 BFR96 pins resistance BFR96 TRANSISTOR BFQ32 a 933 transistor
Text: Philips Sem iconductors Product specification ^ NPN 5 GHz wideband transistor PHILIPS DESCRIPTION 711DÔ2t> 0 0 4 5 7 7 b Sfc.E D INTERNATIONAL BFR96 lfl7 « P H I N PINNING NPN transistor in a plastic SOT37 envelope primarily intended for use in RF wideband amplifiers such as
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BFR96
004577b
ON4487)
BFQ32.
BFR96/02
0D457A2
00MS763
transistor bfr96
SL 100 NPN Transistor
BFR96
BFR96 LOW POWER TRANSISTOR
transistor 936
M8B916
BFR96 pins resistance
BFR96 TRANSISTOR
BFQ32
a 933 transistor
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Untitled
Abstract: No abstract text available
Text: bbSBTBl 0032S14 TSO Philips Semiconductors MB APX Product specification NPN 5 GHz wideband transistor crystal X3A-BFR96 N AMER PHILIPS/DISCRETE DESCRIPTION b^E ]> MECHANICAL DATA NPN crystal used in BFR96S SOT37 , BFQ63 (TO-72) and BFR106 (SOT23). Crystals are supplied as whole
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0032S14
X3A-BFR96
BFR96S
BFQ63
BFR106
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BFR96S
Abstract: transistor bfr96 BFQ63 BFR96 BFR106 X3A-BFR96 35331
Text: b b S 3 cì31 Q032E14 T50 ^ B A P X Philips S em iconductors Product specification NPN 5 GHz wideband transistor crystal X3A-BFR96 N AMER PHILIPS/DISCRETE DESCRIPTION b^E ]> MECHANICAL DATA NPN crystal used in BFR96S SOT37 , BFQ63 (TO-72) and BFR106 (SOT23). Crystals are supplied as whole
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BFR96S
BFQ63
BFR106
X3A-BFR96
X3A-BFR96
RV-3-5-52/733
BFR96S
transistor bfr96
BFQ63
BFR96
BFR106
35331
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BFR96 philips
Abstract: No abstract text available
Text: ^ 5 3 ^ 3 1 Philips Semiconductors 0 0 3 1 flfl7 b fll M APX Product specification BFR96 NPN 5 GHz w ideband transistor N AflER PHILIPS/DISCRETE DESCRIPTION b^E D PINNING NPN transistor in a plastic SOT37 envelope primarily intended for use in RF wideband amplifiers such as
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BFR96
BFR96/02
ON4487)
hbS3T31
BFR96 philips
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BFR96
Abstract: BFR96 philips BFR96 LOW POWER TRANSISTOR for transistor bfr96 BFQ32 4 20 mA 1992 transistor bfr96 philips bfq32 BFR96$ a 933 transistor
Text: Philips Sem iconductors Product specification ^ NPN 5 GHz wideband transistor DESCRIPTION VllDfiEb D04577b lfl7 « P H I N SbE D PHILIPS INTERNA TIONAL BFR96 PINNING NPN transistor in a plastic SOT37 envelope primarily intended for use in RF wideband amplifiers such as
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BFR96
DD4S77b
ON4487)
BFQ32.
coll801
711082b
BFR96 philips
BFR96 LOW POWER TRANSISTOR
for transistor bfr96
BFQ32
4 20 mA 1992
transistor bfr96
philips bfq32
BFR96$
a 933 transistor
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BFR96
Abstract: No abstract text available
Text: MOTOROLA •I SEMICONDUCTOR TECHNICAL DATA The RF Line NPN S ilico n H igh -Frequ en cy Thransistor The BFR96 transistor uses the same state-of-the-art microwave transistor chip which features fine-line geometry, ion-implanted arsenic emitters and gold top metallization. This transistor is intended for low-to-medium power amplifiers
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BFR96
BFR96
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SL2128
Abstract: MRF965 MRF961 BFRC96 case 317-01
Text: MOTOROLA SC XSTRS/R F 4bE b3b7HS4 D 00=14173 b • MOTOROLA SEMICONDUCTOR TECHNICAL DATA BFR96 BFRC96 MRF961 MRF962 MRF965 T h e R F L in e NPN SILICO N H IG H FREQ UENCY TRANSISTORS The B FR 96 series transistors use the same state-of-the-art m icro
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BFR96
BFRC96
MRF961
MRF962
MRF965
BFR96,
BFRC96,
MRF961,
SL2128
MRF965
case 317-01
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transistor bfr96
Abstract: BFR96 philips BFR96 BFR96 LOW POWER TRANSISTOR for transistor bfr96 BFR96 TRANSISTOR a 933 transistor BFR96 pins resistance BFQ32 Transistor 933
Text: ^ 5 3 ^ 3 1 Philips Semiconductors 0031ÛÔ7 b fll M APX Product specification BFR96 NPN 5 GHz wideband transistor N AMER PHILIPS/DISCRETE DESCRIPTION □TE D PINNING NPN transistor in a plastic SOT37 envelope primarily intended for use in RF wideband amplifiers such as
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bbS3131
BFR96
ON4487)
BFQ32.
transistor bfr96
BFR96 philips
BFR96
BFR96 LOW POWER TRANSISTOR
for transistor bfr96
BFR96 TRANSISTOR
a 933 transistor
BFR96 pins resistance
BFQ32
Transistor 933
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Transistor C G 774 6-1
Abstract: C G 774 6-1 transistor a 1941 a/Transistor C G 774 6-1 RLF100-11/12/Transistor C G 774 6-1
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon H igh-Frequency Transistor The BFR96 transistor uses the sam e s ta te -o f-th e -a rt microwave transistor chip which features fine -line geometry, ion-im planted arsenic em itters and gold top metallization. This transistor is intended for low -to -m e dium power amplifiers
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BFR96
Transistor C G 774 6-1
C G 774 6-1
transistor a 1941
a/Transistor C G 774 6-1
RLF100-11/12/Transistor C G 774 6-1
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X3A-BFR96
Abstract: transistor bfr96 BFR96S BFR96 BFQ63 crystal PHILIPS BFR106
Text: P h ilip s S em icon du ctors T 3 l '^ o NPN 5 GHz wideband transistor crystal PHILIPS INTERNATIONAL Produ ct sp ecification SbE D • X3A-BFR96 IPHIN 711Gß2b OaMblQH 4^2 M E C H A N IC A L DATA D ESCRIPTION Crystal N PN crystal used in BFR 96S SOT37 , BFQ63 (TO-72)
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BFR96S
BFQ63
BFR106
X3A-BFR96
X3A-BFR96
711Gfi2b
URV-3-5-52/733
transistor bfr96
BFR96S
BFR96
BFQ63
crystal PHILIPS
BFR106
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MRF966
Abstract: MRF96 re30d
Text: MRF961 MRF962 MRF965 See BFR96 MOTOROLA • SEMICONDUCTOR TECHNICAL DATA The RF Line MRF966 MRFC966 N-Channel Dual-Gate G aA s Field-Effect Transistor . . . d e p le t i o n m o d e d u a l- g a t e M E S F E T d e s ig n e d f o r h ig h f r e q u e n c y a m p lif ie r
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MRF961
MRF962
MRF965
BFR96)
MRF966
MRFC966
MRF966,
MRFC966
MRF96
re30d
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MRF965
Abstract: mrf*965 MRF961 LE2V f962 MRF96 BFR96 an
Text: MOTOROLA SEM ICONDUCTOR TECHNICAL DATA BFR96 BFRC96 MRF961 MRF962 MRF965 The RF Line NPN S IL IC O N H IG H F R E Q U E N C Y T R A N S IS T O R S T h e B F R 9 6 series tra n s is to rs use the same s ta t e - o f- t h e - a r t m i c r o wa ve t r a n s i s t o r c h i p w h i c h f e a t u r e s f i n e - li n e g e o m e t r y , io n - i m p l a n t e d
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BFR96
BFRC96
MRF961
MRF962
MRF965
BFR96,
BFRC96,
MRF961,
MRF962,
MRF965
mrf*965
LE2V
f962
MRF96
BFR96 an
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MOTOROLA 2N5179
Abstract: 2N5160 BFR96 MM4049 MRF531 BFR90 MOTOROLA MRF911 2N4957 2N5032 2N5583
Text: Low-Noise The low-noise devices listed are produced w ith carefully controlled rj, and f j to optim ize device noise performance. Devices listed in the m atrix are classified according to noise figure perform ance versus frequency. dB 1.5 2.0 2.5 3.0 3.5
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2N5829
2N5031
MRF904
2N4957
2N5032
MOTOROLA 2N5179
2N5160
BFR96
MM4049
MRF531
BFR90 MOTOROLA
MRF911
2N5583
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2N5109 motorola
Abstract: MRF536 BFR90 application MRF931 MRF586 244A-01 MRF962 MRF961 mrf517 2N5943
Text: characterized with y or s parameters; and in addition, there are non-saturated switching characteristics, low power driver spec ifications, and noise figure limits. Q P L types with JAN, JT X and J T X V processing levels are available a s well a s Hi Rei pro
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17A-01
05A-01
MRF536*
MRF2369
MRF571
44A-01,
2N5947
MRF511
2N6603
MRF962
2N5109 motorola
MRF536
BFR90 application
MRF931
MRF586
244A-01
MRF961
mrf517
2N5943
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900 mhz oscillator using bfr91 transistor
Abstract: Mrf648 uhf amplifier design BFR90 Motorola transistors MRF646 Motorola transistors MRF648 Motorola transistors MRF630 case 317-01 MRF2369 MRF586 motorola mrf237
Text: characterized with y or s parameters; and in addition, there are non-saturated switching characteristics, low power driver spec ifications, and noise figure limits. Q P L types with JAN, JTX and JT X V processing levels are available as well as Hi Rei pro
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17A-01
05A-01
mrf559
mrf581
mrf837
mrf8372
mrf838/a
305a-01
mrf557
317d-01
900 mhz oscillator using bfr91 transistor
Mrf648
uhf amplifier design BFR90
Motorola transistors MRF646
Motorola transistors MRF648
Motorola transistors MRF630
case 317-01
MRF2369
MRF586
motorola mrf237
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mrf502 gold transistor
Abstract: Motorola transistors MRF630 2N3948 transistor 2n4959 BFR96 MRF2369 MRF525 MRF536 MRF931 MRF911
Text: characterized with y or s parameters; and in addition, there are non-saturated switching characteristics, low power driver spec ifications, and noise figure limits. QPL types with JAN, JTX and JTXV processing levels are available as well as Hi Rei pro
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17A-01
05A-01
MRF525*
2N4428
O-205AD
2N5160f
2N3866
MRF313
mrf502 gold transistor
Motorola transistors MRF630
2N3948
transistor 2n4959
BFR96
MRF2369
MRF525
MRF536
MRF931
MRF911
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