BGA 2J marking code
Abstract: No abstract text available
Text: ADVANCE‡ 18Mb: 1 MEG x 18, 512K x 32/36 PIPELINED, SCD SYNCBURST SRAM 18Mb SYNCBURST SRAM MT58L1MY18P, MT58V1MV18P, MT58L512Y32P, MT58V512V32P, MT58L512Y36P, MT58V512V36P 3.3V VDD, 3.3V or 2.5V I/O; 2.5V VDD, 2.5V I/O, Pipelined, Single-Cycle Deselect
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Original
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MT58L1MY18P,
MT58V1MV18P,
MT58L512Y32P,
MT58V512V32P,
MT58L512Y36P,
MT58V512V36P
100-Pin
Apr/6/00
Jan/18/00
Nov/11/99
BGA 2J marking code
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PDF
|
Untitled
Abstract: No abstract text available
Text: ADVANCE‡ 18Mb: 1 MEG x 18, 512K x 32/36 PIPELINED, DCD SYNCBURST SRAM 18Mb SYNCBURST SRAM MT58L1MY18D, MT58V1MV18D, MT58L512Y32D, MT58V512V32D, MT58L512Y36D, MT58V512V36D 3.3V VDD, 3.3V or 2.5V I/O; 2.5V VDD, 2.5V I/O, Pipelined, Double-Cycle Deselect
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Original
|
165Vor
MT58L1MY18D,
MT58V1MV18D,
MT58L512Y32D,
Apr/6/00
Jan/18/00
Nov/11/99
MT58L1MY18D
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PDF
|
Untitled
Abstract: No abstract text available
Text: ADVANCE‡ 18Mb: 1 MEG x 18, 512K x 32/36 PIPELINED, SCD SYNCBURST SRAM 18Mb SYNCBURST SRAM MT58L1MY18P, MT58V1MV18P, MT58L512Y32P, MT58V512V32P, MT58L512Y36P, MT58V512V36P 3.3V VDD, 3.3V or 2.5V I/O; 2.5V VDD, 2.5V I/O, Pipelined, Single-Cycle Deselect
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Original
|
MT58L1MY18P,
MT58V1MV18P,
MT58L512Y32P,
MT58V512V32P,
MT58L512Y36P,
MT58V512V36P
100-Pin
Apr/6/00
Jan/18/00
Nov/11/99
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PDF
|
Untitled
Abstract: No abstract text available
Text: ADVANCE‡ 18Mb: 1 MEG x 18, 512K x 32/36 PIPELINED, DCD SYNCBURST SRAM 18Mb SYNCBURST SRAM MT58L1MY18D, MT58V1MV18D, MT58L512Y32D, MT58V512V32D, MT58L512Y36D, MT58V512V36D 3.3V VDD, 3.3V or 2.5V I/O; 2.5V VDD, 2.5V I/O, Pipelined, Double-Cycle Deselect
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Original
|
MT58L1MY18D,
MT58V1MV18D,
MT58L512Y32D,
MT58V512V32D,
MT58L512Y36D,
MT58V512V36D
100-Pin
165Vor
Apr/6/00
Jan/18/00
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PDF
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Untitled
Abstract: No abstract text available
Text: ADVANCE‡ 18Mb: 1 MEG x 18, 512K x 32/36 PIPELINED, DCD SYNCBURST SRAM 18Mb SYNCBURST SRAM MT58L1MY18D, MT58V1MV18D, MT58L512Y32D, MT58V512V32D, MT58L512Y36D, MT58V512V36D 3.3V VDD, 3.3V or 2.5V I/O; 2.5V VDD, 2.5V I/O, Pipelined, Double-Cycle Deselect
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Original
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MT58L1MY18D,
MT58V1MV18D,
MT58L512Y32D,
MT58V512V32D,
MT58L512Y36D,
MT58V512V36D
100-Pin
165Vor
Apr/6/00
Jan/18/00
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PDF
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78 ball fbga thermal resistance
Abstract: No abstract text available
Text: ADVANCE‡ 18Mb: 1 MEG x 18, 512K x 32/36 PIPELINED, SCD SYNCBURST SRAM 18Mb SYNCBURST SRAM MT58L1MY18P, MT58V1MV18P, MT58L512Y32P, MT58V512V32P, MT58L512Y36P, MT58V512V36P 3.3V VDD, 3.3V or 2.5V I/O; 2.5V VDD, 2.5V I/O, Pipelined, Single-Cycle Deselect
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Original
|
Apr/6/00
Jan/18/00
Nov/11/99
MT58L1MY18P
MT58L1MY18P
78 ball fbga thermal resistance
|
PDF
|
Untitled
Abstract: No abstract text available
Text: ADVANCE‡ 18Mb: 1 MEG x 18, 512K x 32/36 FLOW-THROUGH SYNCBURST SRAM 18Mb SYNCBURST SRAM MT58L1MY18F, MT58V1MV18F, MT58L512Y32F, MT58V512V32F, MT58L512Y36F, MT58V512V36F 3V VDD, 3.3V or 2.5V I/O; 2.5V VDD, 2.5V I/O, Flow-Through FEATURES 100-Pin TQFP1
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Original
|
MT58L1MY18F,
MT58V1MV18F,
MT58L512Y32F,
MT58V512V32F,
MT58L512Y36F,
MT58V512V36F
100-Pin
Apr/6/00
Jan/18/00
Nov/11/99
|
PDF
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4c 8184
Abstract: BGA 2J marking code 18-SE
Text: ADVANCE‡ 18Mb: 1 MEG x 18, 512K x 32/36 FLOW-THROUGH ZBT SRAM 18Mb ZBT SRAM MT55L1MY18F, MT55V1MV18F, MT55L512Y32F, MT55V512V32F, MT55L512Y36F, MT55V512V36F 3.3V VDD, 3.3V or 2.5V I/O; 2.5V VDD 2.5V I/O FEATURES • • • • • • • • • •
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Original
|
Apr/6/00
Jan/18/00
119-pin
Nov/11/99
MT55L1MY18F
4c 8184
BGA 2J marking code
18-SE
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PDF
|
Untitled
Abstract: No abstract text available
Text: ADVANCE‡ 18Mb: 1 MEG x 18, 512K x 32/36 FLOW-THROUGH SYNCBURST SRAM 18Mb SYNCBURST SRAM MT58L1MY18F, MT58V1MV18F, MT58L512Y32F, MT58V512V32F, MT58L512Y36F, MT58V512V36F 3V VDD, 3.3V or 2.5V I/O; 2.5V VDD, 2.5V I/O, Flow-Through FEATURES 100-Pin TQFP1
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Original
|
MT58L1MY18F,
MT58V1MV18F,
MT58L512Y32F,
MT58V512V32F,
MT58L512Y36F,
MT58V512V36F
100-Pin
Apr/6/00
Jan/18/00
Nov/11/99
|
PDF
|
Untitled
Abstract: No abstract text available
Text: ADVANCE‡ 18Mb: 1 MEG x 18, 512K x 32/36 FLOW-THROUGH ZBT SRAM 18Mb ZBT SRAM MT55L1MY18F, MT55V1MV18F, MT55L512Y32F, MT55V512V32F, MT55L512Y36F, MT55V512V36F 3.3V VDD, 3.3V or 2.5V I/O; 2.5V VDD 2.5V I/O FEATURES • • • • • • • • • •
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Original
|
MT55L1MY18F,
MT55V1MV18F,
MT55L512Y32F,
MT55V512V32F,
MT55L512Y36F,
MT55V512V36F
100-Pin
Apr/6/00
Jan/18/00
119-pin
|
PDF
|
Untitled
Abstract: No abstract text available
Text: ADVANCE‡ 18Mb: 1 MEG x 18, 512K x 32/36 FLOW-THROUGH SYNCBURST SRAM 18Mb SYNCBURST SRAM MT58L1MY18F, MT58V1MV18F, MT58L512Y32F, MT58V512V32F, MT58L512Y36F, MT58V512V36F 3V VDD, 3.3V or 2.5V I/O; 2.5V VDD, 2.5V I/O, Flow-Through FEATURES 100-Pin TQFP1
|
Original
|
MT58L1MY18F,
MT58V1MV18F,
MT58L512Y32F.
Apr/6/00
Jan/18/00
Nov/11/99
MT58L1MY18F
MT58L1MY18F
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PDF
|
Untitled
Abstract: No abstract text available
Text: ADVANCE‡ 18Mb: 1 MEG x 18, 512K x 32/36 PIPELINED ZBT SRAM 18Mb ZBT SRAM MT55L1MY18P, MT55V1MV18P, MT55L512Y32P, MT55V512V32P, MT55L512Y36P, MT55V512V36P 3.3V VDD, 3.3V or 2.5V I/O; 2.5V VDD 2.5V I/O FEATURES • • • • • • • • • • •
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Original
|
MT55L1MY18P,
MT55V1MV18P,
MT55L512Y32P,
MT55V512V32P,
MT55L512Y36P,
MT55V512V36P
100-Pin
Apr/6/00
Jan/18/00
119-pin
|
PDF
|
Untitled
Abstract: No abstract text available
Text: ADVANCE‡ 18Mb: 1 MEG x 18, 512K x 32/36 PIPELINED ZBT SRAM 18Mb ZBT SRAM MT55L1MY18P, MT55V1MV18P, MT55L512Y32P, MT55V512V32P, MT55L512Y36P, MT55V512V36P 3.3V VDD, 3.3V or 2.5V I/O; 2.5V VDD 2.5V I/O FEATURES • • • • • • • • • • •
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Original
|
Apr/6/00
Jan/18/00
119-pin
Nov/11/99
MT55L1MY18P
|
PDF
|
GVT71128DA36
Abstract: GVT71256DA18
Text: ADVANCE INFORMATION GALVANTECH, INC. GVT71128DA36/GVT71256DA18 128K X 36/256K X 18 SYNCHRONOUS SRAM SYNCHRONOUS BURST SRAM PIPELINED OUTPUT 128K x 36 SRAM 256K x 18 SRAM +3.3V SUPPLY, FULLY REGISTERED FEATURES GENERAL DESCRIPTION • • • • • The Galvantech Synchronous Burst SRAM family
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Original
|
GVT71128DA36/GVT71256DA18
36/256K
GVT71128DA36
GVT71256DA18
072x36
144x18
71128DA36
71256DA18
|
PDF
|
|
|
marking code SA
Abstract: No abstract text available
Text: ADVANCE M I in P n N 256K x 18/128K x 36 LVTTL, PIPELINED LATE WRITE SRAM FEATURES • • • • • • • • • • • • • • • • Fast cycle times 5ns, 6ns and 7ns 256K x 18 or 128K x 36 configurations Single +3.3V +0.3V/-0.2V power supply (Vdd)
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OCR Scan
|
18/128K
119-bump,
MT59L256U8P
marking code SA
|
PDF
|
ic MARKING J LA 8P
Abstract: No abstract text available
Text: ADVANCE M in P n M I u 2 5 256K x 18/128K x 36 I/O, PIPELINED LATE W RITE SRAM V M T 5 9 L2 5 6 V 18 P M T 5 9 L 128 V 3 6 P I A T E U M I 1_ WRITE SRAM FEATURES • Fast cycle times 4.5ns, 5ns, 6ns and 7ns • 256K x 18 or 128K x 36 configurations • Single + 3 .3 V + 0 .3 V /-0 .2 V p o w e r su p p ly (V dd)
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OCR Scan
|
18/128K
MT59L256V18P
ic MARKING J LA 8P
|
PDF
|
MICRON POWER RESISTOR 4d
Abstract: No abstract text available
Text: ADVANCE 256K X 18/128K x 36 HSTL, LA T C H E D LA TE W RITE SR AM |V/|IC=RO N A C k J Ih L A T F WRITE SRAM FEATURES • Fast cycle times 5ns, 5.5ns and 6ns • 256K x 18 or 128K x 36 configurations • Single +3.3V +0.3V/-0.2V pow er supply (Vdd) • Separate isolated output buffer supply (V ddQ)
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OCR Scan
|
18/128K
MT59L256H18L
MT59L128H36L.
MICRON POWER RESISTOR 4d
|
PDF
|
Untitled
Abstract: No abstract text available
Text: ADVANCE |V/|C RQ N I A T E l _ m l_ MT59L256V18L MT59L128V36L WRITE SRAM FEATURES • • • • • • • • • • • • • • • • • Fast cycle times 5ns, 5.5ns and 6ns 256K x 18 or 128K x 36 configurations Single +3.3V +0.3V/-0.2V p o w e r s u p p ly (V d d )
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OCR Scan
|
18/128K
MT59L256V18L
MT59L128V36L
16/12SK
MT59L25eV18LpmQ
|
PDF
|
Untitled
Abstract: No abstract text available
Text: ADVANCE 256K x 18/128K x 36 HSTL, LATCHED LATE WRITE SRAM MT59L256H18L MT59L128H36L 4.5Mb LATE WRITE SRAM FEATURES • • • • • • • • • • • • • • • • • • • Fast cycle times 5ns, 5.5ns and 6ns 256K x 18 or 128K x 36 configurations
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OCR Scan
|
18/128K
MT59L256H18L
MT59L128H36L
|
PDF
|
Untitled
Abstract: No abstract text available
Text: ADVANCE 256K x 18/128K x 36 2.5V I/O, LATCHED LATE WRITE SRAM MT59L256V18L MT59L128V36L 4.5Mb LATE WRITE SRAM FEATURES • • • • • • • • • • • • • • • • • Fast cycle times 5ns, 5.5ns and 6ns 256K x 18 or 128K x 36 configurations
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OCR Scan
|
18/128K
MT59L256V18L
MT59L128V36L
18/128KX
MT59L256V18L
|
PDF
|
Untitled
Abstract: No abstract text available
Text: ADVANCE 256K x 18/128K x 36 LVTTL, LATCHED LATE WRITE SRAM MT59L256L18L MT59L128L36L 4.5Mb LATE WRITE SRAM FEATURES • • • • • • • • • • • • • • • • • Fast cycle tim es 5ns, 5.5ns and 6ns 256K x 18 or 128K x 36 configurations
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OCR Scan
|
18/128K
MT59L256L18L
MT59L128L36L
|
PDF
|
Untitled
Abstract: No abstract text available
Text: ADVANCE 256K x 18/128K x 36 HSTL, PIPELINED LATE WRITE SRAM MT59L256H18P MT59L128H36P 4.5Mb LATE WRITE SRAM FEATURES • • • • • • • • • • • • • • • • • • Fast cycle times 4.5ns, 5ns, 6ns and 7ns 256K x 18 or 128K x 36 configurations
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OCR Scan
|
18/128K
MT59L256H18P
MT59L128H36P
|
PDF
|
micron cmos 1988
Abstract: No abstract text available
Text: ADVANCE 256K X 18/128K x 36 2.5V I/O, FLOW -THROUGH LATE WRITE SRAM l^ ic n o N Dual Clock and Single Clock FEATURES • Fast cycle times 4.5ns, 5ns, 6ns and 7ns • 256K x 18 or 128K x 36 configurations • Single + 3 .3 V + 0 .3 V /-0 .2 V p o w e r su p p ly (V dd)
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OCR Scan
|
18/128K
MT59L256V18F
MT59L128V36F
MT50L2S6V18F
micron cmos 1988
|
PDF
|
Untitled
Abstract: No abstract text available
Text: AD VA NC E 25 6 K x 1 8 / 1 2 8K x 36 LVTTL, PIPELINED LATE WRITE SRAM MICRON U TECHNOLOGY, INC. 4.5Mb LATE WRITE SRAM MT59L256L18P MT59L128L36P FEATURES * Fast cycle times 5ns, 6ns and 7ns * 256K x 18 or 128K x 36 configurations * Single +3.3V +0.3V/-0.2V power supply (Vdd)
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OCR Scan
|
119-bump,
JEDE20
18/128K
MT59L256L18P
|
PDF
|
