K 349
Abstract: No abstract text available
Text: 4.050" 1 399 49 99 51 400 2 2 1 B D F 2.750" 351 H 352 K 349 350 M P T 300 301 4 3 150 149 152 151 200 199 6 5 7 A C E G J L N R U 252 250 202 251 249 201 302 299 101 100 52 50 102 Top View TOP INTERFACE Male pins Mates with SK-BGA119Ax-Z-M-0x, SK-LGA119Ax-Z-M-0x sockets
|
Original
|
SK-BGA119Ax-Z-M-0x,
SK-LGA119Ax-Z-M-0x
LS-BGA119A-02
SF-BGA119A-B-01
FR4/G10
finish10
PA-BGA119A-01
PA-BGA119A-01
K 349
|
PDF
|
SF-BGA119A-B-11
Abstract: No abstract text available
Text: D Package Code: BGA119A C 7.62mm [0.300"] See BGA pattern code to the right for actual pattern layout Y 20.32mm [0.800"] X Top View reference only 1.27 mm [0.050"] 2 0.36mm [0.014"] dia. 5.33mm 3.74mm [0.147"] [0.210"] Ø 0.64mm pad [Ø 0.025"] 1.27mm [0.050"]
|
Original
|
BGA119A
FR4/G10
SF-BGA119A-B-11
|
PDF
|
43bh
Abstract: marking code 42ae marking JC 6f diode CXK77P18E160GB CXK77P36E160GB CXK77P36E160GB-4AE CXK77P36E160GB-4E 43AF marking 43AF
Text: SONY CXK77P36E160GB / CXK77P18E160GB 16Mb LW R-L HSTL High Speed Synchronous SRAMs 512K x 36 or 1M x 18 8Mb LW R-L w/ EC HSTL High Speed Synchronous SRAMs (256K x 36 or 512K x 18) 4/42/43/44 Preliminary Description The CXK77P36E160GB (organized as 524,288 words by 36 bits) and the CXK77P18E160GB (organized as 1,048,576 words
|
Original
|
CXK77P36E160GB
CXK77P18E160GB
CXK77P36E160GB
-100uA
43bh
marking code 42ae
marking JC 6f diode
CXK77P18E160GB
CXK77P36E160GB-4AE
CXK77P36E160GB-4E
43AF
marking 43AF
|
PDF
|
CXK77L18R160GB-3
Abstract: CXK77L18R160GB-33 CXK77L18R160GB-4
Text: SONY CXK77L18R160GB 16Mb LW R-R HSTL High Speed Synchronous SRAM 1M x 18 3/33/4 Preliminary Description The CXK77L18R160GB is a high speed CMOS synchronous static RAM with common I/O pins, organized as 1,048,576 words by 18 bits. This synchronous SRAM integrates input registers, high speed RAM, output registers, and a one-deep write buffer
|
Original
|
CXK77L18R160GB
CXK77L18R160GB
BGA-119P-021
BGA119-P-1422
CXK77L18R160GB-3
CXK77L18R160GB-33
CXK77L18R160GB-4
|
PDF
|
CXK77Q18B80AGB
Abstract: CXK77Q36B80AGB CXK77Q36B80AGB-28 CXK77Q36B80AGB-33
Text: SONY CXK77Q36B80AGB / CXK77Q18B80AGB 28/33/37/4 8Mb LW R-R HSTL High Speed Synchronous SRAMs 256K x 36 or 512K x 18 Preliminary Description The CXK77Q36B80AGB (organized as 262,144 words by 36 bits) and the CXK77Q18B80AGB (organized as 524,288 words by 18 bits) are high speed CMOS synchronous static RAMs with common I/O pins. These synchronous SRAMs integrate input
|
Original
|
CXK77Q36B80AGB
CXK77Q18B80AGB
CXK77Q36B80AGB
CXK77Q18B80AGB
640mA
600mA
CXK77Q36B80AGB-28
CXK77Q36B80AGB-33
|
PDF
|
Untitled
Abstract: No abstract text available
Text: CXK77B3611AGB -5/6 High Speed Bi-CMOS Synchronous Static RAM Description The CXK77B3611AGB-5/6 is a high speed 1M bit Bi-CMOS synchronous static RAM organized as 32768 words by 36 bits. This SRAM integrates input registers, high speed SRAM and write buffer onto a
|
Original
|
CXK77B3611AGB
CXK77B3611AGB-5/6
CXK77B3611AGB-5
200MHz
167MHz
119TBGA
CXK77B3611AGB
BGA-119P-01
|
PDF
|
CXK77N18R160GB
Abstract: CXK77N18R160GB-3 CXK77N18R160GB-33 CXK77N18R160GB-4 CXK77N36R160GB CXK77N36R160GB-3 CXK77N36R160GB-33 CXK77N36R160GB-4
Text: SONY CXK77N36R160GB / CXK77N18R160GB 16Mb LW R-R HSTL High Speed Synchronous SRAMs 512Kb x 36 or 1Mb x 18 3/33/4 Preliminary Description The CXK77N36R160GB (organized as 524,288 words by 36 bits) and the CXK77N18R160GB (organized as 1,048,576 words by 18 bits) are high speed CMOS synchronous static RAMs with common I/O pins. These synchronous SRAMs integrate input
|
Original
|
CXK77N36R160GB
CXK77N18R160GB
512Kb
CXK77N36R160GB
IDD-33
660mA
550mA
600mA
500mA
CXK77N18R160GB
CXK77N18R160GB-3
CXK77N18R160GB-33
CXK77N18R160GB-4
CXK77N36R160GB-3
CXK77N36R160GB-33
CXK77N36R160GB-4
|
PDF
|
IC51-128
Abstract: transistor fpq 630 PC-68 TTP-48DF OF IC 7421 Enplas fpq Enplas PT740 AB am fm radio Hitachi DSAUTAZ005
Text: Hitachi Semiconductor Package Data Book Introduction Contents Section 1 Introduction of Packages 1.1 Types of Packages and Advantages 1.2 IC Package Name and Code Indication 1.3 Method of Indicating IC Package Dimensions 1.4 Lineups in Terms of Shapes and Materials
|
Original
|
|
PDF
|
BGA676
Abstract: BGA665 BGA-1156 156 QFN 12X12 LGA240 BGA-783 BGA441 BGA1024 BGA1521 7286X
Text: Ironwood Electronics Appendix A AP-A.1 APPENDIX A • BGA Chip Package Specification Tables . . . . . . . .page AP.2 thru AP.16 • LGA Chip Package Specification Table . . . . . . . . . . . . . . . . .page AP.17 • MLF Package Specification Table . . . . . . . . . . . . . . . . . . . . .page AP.18
|
Original
|
BGA16A1ATTERNS
BGA676
BGA665
BGA-1156
156 QFN 12X12
LGA240
BGA-783
BGA441
BGA1024
BGA1521
7286X
|
PDF
|
FSQ510 Equivalent
Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
Text: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178
|
Original
|
GP-20)
FSQ510 Equivalent
BTA12 6008
bta16 6008
ZIGBEE interface with AVR ATmega16
Precision triac control thermostat
thyristor t 558 f eupec
gw 5819 diode
transistor a564
A564 transistor
BSM25GP120 b2
|
PDF
|
BGA-169
Abstract: TQFP112 BGA169 PQFP144 BGA-421 BQFP-84 qfp132 BGA196 PLCC18 BGA-256
Text: НАКОНЕЧНИКИ Изображения наконечников Наименование/размер A/B/C/D Наконечники для монтажа (для паяльника PS90) PS, 0.4 мм, конический PS, 0.8 мм, конический
|
Original
|
SOIC-14
SOIC-16
05x10
BGA-100
16x16
BGA-86
25x17
BGA-121/196/68
15x15
BGA-144
BGA-169
TQFP112
BGA169
PQFP144
BGA-421
BQFP-84
qfp132
BGA196
PLCC18
BGA-256
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SONY CXK77Q36B160GB 16Mb LW LS R-R HSTL High Speed Synchronous SRAM 512K x 36 28/33/4 Preliminary Description The CXK77Q36B160GB is a high speed CMOS synchronous static RAM with common I/O pins, organized as 524,288 words by 36 bits. This synchronous SRAM integrates input registers, high speed RAM, output registers, and a one-deep write buffer
|
Original
|
CXK77Q36B160GB
CXK77Q36B160GB
IDD-33
|
PDF
|
TSMC single port sram
Abstract: No abstract text available
Text: SONY CXK77Q36B80AGB / CXK77Q18B80AGB 28/33/37/4 8Mb LW R-R HSTL High Speed Synchronous SRAMs 256K x 36 or 512K x 18 Preliminary Description The CXK77Q36B80AGB (organized as 262,144 words by 36 bits) and the CXK77Q18B80AGB (organized as 524,288 words by 18 bits) are high speed CMOS synchronous static RAMs with common I/O pins. These synchronous SRAMs integrate input
|
Original
|
CXK77Q36B80AGB
CXK77Q18B80AGB
CXK77Q36B80AGB
CXK77Q18B80AGB
640mA
600mA
TSMC single port sram
|
PDF
|
CXK77S36R80AGB-33
Abstract: 100C CXK77S18R80AGB CXK77S36R80AGB CXK77S36R80AGB-4A marking SBw diode
Text: SONY CXK77S36R80AGB / CXK77S18R80AGB 8Mb Late Write HSTL High Speed Synchronous SRAMs 256K x 36 or 512K x 18 Organization 33/36/4 Preliminary Description The CXK77S36R80AGB (organized as 262,144 words by 36 bits) and the CXK77S18R80AGB (organized as 524,288 words
|
Original
|
CXK77S36R80AGB
CXK77S18R80AGB
CXK77S36R80AGB
540ma
620mA
570mA
650mA
250MHz
CXK77S36R80AGB-33
100C
CXK77S18R80AGB
CXK77S36R80AGB-4A
marking SBw diode
|
PDF
|
|
|
sony tsmc
Abstract: CXK77P18L80AGB CXK77P36L80AGB CXK77P36L80AGB-4 CXK77P36L80AGB-4A
Text: SONY CXK77P36L80AGB / CXK77P18L80AGB 8Mb LW R-L HSTL High Speed Synchronous SRAMs 256K x 36 or 512K x18 4/42/43/44 Preliminary Description The CXK77P36L80AGB (organized as 262,144 words by 36 bits) and the CXK77P18L80AGB (organized as 524,288 words by 18 bits) are high speed CMOS synchronous static RAMs with common I/O pins. These synchronous SRAMs integrate input
|
Original
|
CXK77P36L80AGB
CXK77P18L80AGB
CXK77P36L80AGB
200mV
-100uA
sony tsmc
CXK77P18L80AGB
CXK77P36L80AGB-4
CXK77P36L80AGB-4A
|
PDF
|
TSOP44 Package
Abstract: HY628400ALLG-70 HY62WT08081E-DG70I HY628100BLLG-70 SO28 package datasheet cy62127bvll-70bai so32 HY628400ALLT2-70 M68AF511AL55MC1 K6T1008C2E-GB70
Text: Static Random Access Memories Asynchronous low power and synchronous fast SRAM solutions www.st.com/sram Selection Guide with Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions Static Random Access Memories STMicroelectronics has decided to target different growing market segments
|
Original
|
|
PDF
|
CXK77N18B160GB-3
Abstract: CXK77N36B160GB-3 CXK77N36B160GB-33 CXK77N36B160GB-4 BGA-119
Text: SONY CXK77N36B160GB / CXK77N18B160GB 16Mb LW LS R-R HSTL High Speed Synchronous SRAM 512K x 36 or 1M x 18 3/33/4 Preliminary Description The CXK77N36B160GB (organized as 524,288 words by 36 bits) and the CXK77N18B160GB (organized as 1,048,576 words by 18 bits) are high speed CMOS synchronous static RAMs with common I/O pins. These synchronous SRAMs integrate input
|
Original
|
CXK77N36B160GB
CXK77N18B160GB
CXK77N36B160GB
functi540mA
130mA
220mA
CXK77N18B160GB-3
CXK77N36B160GB-3
CXK77N36B160GB-33
CXK77N36B160GB-4
BGA-119
|
PDF
|
PT740 AB
Abstract: PM351 transistor 9726 126 EDR-7313 ED-7402 texas instruments data guide manual Hitachi DSAUTAZ006 DO-35 land pattern Silicon Point Contact Mixer Diodes ED-7311
Text: Hitachi Semiconductor Package Data Book ADE–410–001H 9th Edition March/2001 Semiconductor & Integrated Circuits Hitachi, Ltd. Introduction Thank you for using Hitachi’s semiconductor devices. The growing market for electronic equipment requires mounting semiconductor devices with higher
|
Original
|
March/2001
standard-856-8650
PT740 AB
PM351
transistor 9726 126
EDR-7313
ED-7402
texas instruments data guide manual
Hitachi DSAUTAZ006
DO-35 land pattern
Silicon Point Contact Mixer Diodes
ED-7311
|
PDF
|
he804
Abstract: ati connector HE809 smd diode ED MMSD32032602S-C-xx Microspire MB he807 eurofarad TCN30 MMEE08510804S-C-xx mmfl16016604s-c mmfl16016604s-d
Text: Edition 1.2. Space- & Military Level Components 2008/08 2 Introduction and Table of Contents If you are working on a program for military, industrial and/or space equipments & need product with extended temperature performance, MSA Components can help. To support the customer needs
|
Original
|
|
PDF
|
marking code 43b
Abstract: diode marking code 4n tsmc cmos CXK77P36L80GB-42 CXK77P36L80GB-4A CXK77P36L80GB-4B CXK77P36L80GB CXK77P36L80GB-4
Text: SONY CXK77P36L80GB 8Mb LW R-L HSTL High Speed Synchronous SRAMs 256K x 36 4/42/43/44 Preliminary Description The CXK77P36L80GB is a high speed CMOS synchronous static RAM with common I/O pins, organized as 262,144 words by 36 bits. This synchronous SRAM integrates input registers, high speed RAM, output latches, and a one-deep write buffer
|
Original
|
CXK77P36L80GB
CXK77P36L80GB
200mV
-100uA
marking code 43b
diode marking code 4n
tsmc cmos
CXK77P36L80GB-42
CXK77P36L80GB-4A
CXK77P36L80GB-4B
CXK77P36L80GB-4
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SONY CXK77V1840GB -8 /1 0 /1 2 262,144-Word by 18-bit High Speed CMOS Synchronous Static RAM P f Q l / 'f j j j f j Q f y Description The CXK77V1840GB is a high speed CMOS synchronous static RAM with common I/O pins, organized as 262,144-words by 18-bits. This
|
OCR Scan
|
CXK77V1840GB
144-Word
18-bit
CXK77V1840GB
144-words
18-bits.
provi17
lbfi33
oooooe1234567
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SONY I CXK77B3611AGB » High Speed Bi-CMOS Synchronous Static RAM Preliminary Description The CXK77B3611AGB-5/6 is a high speed 1M bit Bi-CMOS synchronous static RAM organized as 32768 words by 36 bits. This SRAM integrates input registers, high speed SRAM and write buffer onto a
|
OCR Scan
|
CXK77B3611AGB
CXK77B3611AGB-5/6
CXK77B3611AGB-5
200MHz
167MHz
119TBGA
BGA-119P-01
|
PDF
|
flash 32 Pin PLCC 16mbit
Abstract: 398x
Text: Reliability o f Hitachi IC Memories 1. Structure IC memory devices are classified as NMOS type, CMOS type, and Bi-CMOS type. There are advantages to it's circuit design, layout pattern, degree of integration, and manufacturing process. All Hitachi memories are produced using standardized design, manufacturing, and inspection techniques.
|
OCR Scan
|
|
PDF
|
Untitled
Abstract: No abstract text available
Text: So n y CXK77V1840GB - 8/ 10/12 262,144-Word by 18-bit High Speed CMOS Synchronous Static RAM P r e f jf Y ijf jQ f y Description The CXK77V1840GB is a high speed CMOS synchronous static RAM with common I/O pins, organized as 262,144-words by 18-bits. This
|
OCR Scan
|
CXK77V1840GB
144-Word
18-bit
CXK77V1840GB
144-words
18-bits.
OOOOO012
|
PDF
|
