tr 1892
Abstract: PMLL4448 PMLL4148 PMLL4446
Text: • bhS3131 N AMER DÜSS'ilB PMLL4148 PM LL4446 P M L L 4448 32fl H A P X PHILIPS/DISCRETE fa?E D HIGH-SPEED SILICON DIODES FOR SURFACE MOUNTING These d io d e s are p r im a r ily designed fo r fa st logic a p p lic a tio n s . These SM d io d e s are lead less d io d e s in a h e rm e tic a lly sealed S O D 8 OC e n ve lo p e w ith tm -p la te d m e ta l
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bhS3131
PMLL4148
PMLL4446
PMLL4448
PMLL4148:
PMLL4446:
PMLL4448:
tr 1892
PMLL4448
PMLL4148
PMLL4446
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Untitled
Abstract: No abstract text available
Text: _ _ _ I N AM PR PHXLIPS/DISCRETE DbE D PHS1101JSERIES IS bbS3T31 OOllbfl? 7 H T - <93 ~ /S' *1 b f t 15 EPITAXIAL AVALANCHE RECTIFIERS The P H S1 101 series devices are glass-passivated epitaxial silicon rectifier diodes in hermetically sealed
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PHS1101JSERIES
bbS3T31
bhS3131
7Z88041
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Untitled
Abstract: No abstract text available
Text: it N AFTER PHILIPS/DISCRETE 2SE I> bb53T31 001A7S1 3 • BUS23 SERIES T - 2 3 -'IS' SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed, glass-passivated npn power transistors in aTO-3 envelope, intended fo r use in converters, inverters, switching regulators, motor control systems etc.
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bb53T31
001A7S1
BUS23
BUS23B
BUS23B
BUS23C
BUS23B;
BUS23C.
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BUK657-400B
Abstract: diode,FET
Text: N AMER PHILIPS/DISCRETE t.'îE D bbsa'ïai 0030ÔAS r i i « a p x Product Specification Philips Semiconductors PowerMOS transistor BUK657-400B Fast recovery diode FET_ GENERAL DESCRIPTION N-channel enhancement mode
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BUK657-400B
-T0220AB
003000e}
BUK657-400B
diode,FET
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Untitled
Abstract: No abstract text available
Text: l I N AMER PHILIPS/DISCRETE hlE T> APX bbSB'lBl 0DE65E3 ESI BUW11F BUW11AF SILICON DIFFUSED POW ER TRANSISTORS High-voltage, high-speed, glass-passivated npn power transistor in a SOT 199 envelope intended fo r use in converters, inverters, switching regulators, m otor control systems, etc.
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0DE65E3
BUW11F
BUW11AF
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Untitled
Abstract: No abstract text available
Text: II N AUER PHILIPS/DISCRETE 2SE D U bb53T31 □□1^737 3 • I J BDT42F; 42AF; BDT42BF; 42CF T-33-/7 SILICON EPITAXIAL POWER TRANSISTORS PNP silicon epitaxial power transistors, each in a SOT186 envelope w ith an electrically insulated mounting base. NPN complements are BDT41F, BDT41AF, BDT41BF, and BDT41CF.
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bb53T31
BDT42F;
BDT42BF;
T-33-/7
OT186
BDT41F,
BDT41AF,
BDT41BF,
BDT41CF.
BDT42F
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