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    Untitled

    Abstract: No abstract text available
    Text: 0.6 µm BiCMOS Process Family XB06 MIXED-SIGNAL FOUNDRY EXPERTS 0.6 Micron Modular BiCMOS Technology Description The XB06 Series is X-FAB‘s 0.6 Micron BiCMOS Technology. Main target applications are RF circuits and high precision analog applications mixed with


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    SiC JFET

    Abstract: ESD "p-well" n-well" varactor diode parameter 0.6 um cmos process depletion nmos barrier varactor X-Fab
    Text: 0.6 µm BiCMOS Process MIXED-SIGNAL FOUNDRY EXPERTS XB06 Modular 0.6µm BiCMOS Process Module Overview MOS transistor NMOS PMOS CORE CORE 5V double poly/metal BiCMOS module Source Source Drain Drain 0.5µm enhanced bipolar module Gate Gate n+ p+ n+ p+ CAPPOLY


    Original     		PDF BIP05 SiC JFET ESD "p-well" n-well" varactor diode parameter 0.6 um cmos process depletion nmos barrier varactor X-Fab