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    BIPOLAR HG Search Results

    BIPOLAR HG Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    GT30J110SRA Toshiba Electronic Devices & Storage Corporation IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation
    TB67S539FTG Toshiba Electronic Devices & Storage Corporation Stepping Motor Driver/Bipolar Type/Vout(V)=40/Iout(A)=2/Clock Interface Visit Toshiba Electronic Devices & Storage Corporation
    TB67S549FTG Toshiba Electronic Devices & Storage Corporation Stepping Motor Driver/Bipolar Type/Vout(V)=40/Iout(A)=1.5/Clock Interface Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation

    BIPOLAR HG Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    Bipolar HG Zarlink Semiconductor 20 Ghz HG Process Original PDF

    BIPOLAR HG Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    HP8341B

    Abstract: HP4145 hp11612a 8970B TRANSISTOR noise figure measurements footprint transistor Plessey
    Text: On Wafer Noise Measurement Using Bipolar Transistor RF Test Structures S.D. Connor Bipolar Characterization Group, Central R&D, G.E.C. Plessey Semiconductors, Tweedale Way, Oldham, Lancs OL9 7LA, England. Abstract:- We present here a technique for on wafer noise we measurements using bipolar R.F. cell structures. Measurements were taken


    Original     		PDF

    polysilicon resistor

    Abstract: resistor 2,2
    Text: HIGH-PERFORMANCE ANALOG FOUNDRY BIPOLAR HGC PROCESS HGC is a double-polysilicon trench isolated bipolar pro- Table 1 npn parameters 0.6 x 3.0 µm emitter cess optimised for RF applications in the range 900 MHz to 2.4 GHz. Key Parameters (minimum geometry device):


    Original     		PP5882 polysilicon resistor resistor 2,2 PDF

    Bipolar HJ

    Abstract: No abstract text available
    Text: MITEL BIPOLAR TECHNOLOGY SUITE Mitel manufacture a range of high performance bipolar processes ranging from low cost diffused isolation processes to double-poly, trench isolated processes with fTs in the range 22 to 45GHz. HK* HJ HG WPC 45 30 22 7 BVCEO min


    Original     		45GHz. 600MHz Bipolar HJ PDF

    DS5229

    Abstract: No abstract text available
    Text: MITEL BIPOLAR HG PROCESS HG is a double-polysilicon trench isolated bipolar process optimised for RF application in the range 900MHz to 2.4GHz. NPN Cross Section Base Collector Emitter P+ P+ base DC epitaxy n- BN CS CS Substrate (p-) fT vs IC min geometry HG NPN


    Original     		900MHz 00E-06 00E-05 00E-04 00E-03 00E-02 300MHz DS5229 PDF

    Untitled

    Abstract: No abstract text available
    Text: MITEL BIPOLAR HG PROCESS HG is a double-polysilicon trench isolated bipolar process optimised for RF application in the range 900MHz to 2.4GHz. NPN Cross Section Base Collector Emitter P+ P+ base DC epitaxy n- BN CS CS Substrate (p-) fT vs IC min geometry HG NPN


    Original     		900MHz 00E-06 00E-05 00E-04 00E-03 00E-02 300MHz 22GHz DS5229 PDF

    G12N60B3

    Abstract: HGTG12N60B3 HGTG12N60B3D LD26
    Text: HGTG12N60B3 Data Sheet August 2003 27A, 600V, UFS Series N-Channel IGBTs Features This family of MOS gated high voltage switching devices combine the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar


    Original     		HGTG12N60B3 150oC. 112ns 150oC G12N60B3 HGTG12N60B3 HGTG12N60B3D LD26 PDF

    G30N60A4

    Abstract: HGTG30N60A4
    Text: HGTG30N60A4 Data Sheet September 2004 600V, SMPS Series N-Channel IGBT Features The HGTG30N60A4 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar


    Original     		HGTG30N60A4 HGTG30N60A4 150oC. 100kHz 200kHz 125oC G30N60A4 PDF

    g30n60a4

    Abstract: g30n60 IGBT G30N60A4 G30N60A4 transistor G30N60A HGTG30N60A4 LD26 TA49343 TA49373
    Text: HGTG30N60A4 Data Sheet September 2004 600V, SMPS Series N-Channel IGBT Features The HGTG30N60A4 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar


    Original     		HGTG30N60A4 HGTG30N60A4 150oC. 100kHz 200kHz 125oC g30n60a4 g30n60 IGBT G30N60A4 G30N60A4 transistor G30N60A LD26 TA49343 TA49373 PDF

    g30n60a4

    Abstract: IGBT G30N60A4 G30N60A HGTG30N60A4 TA49343 G30N60A4 transistor LD26 TA49373
    Text: HGTG30N60A4 Data Sheet December 2001 600V, SMPS Series N-Channel IGBT Features The HGTG30N60A4 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar


    Original     		HGTG30N60A4 HGTG30N60A4 150oC. 100kHz 200kHz 125oC g30n60a4 IGBT G30N60A4 G30N60A TA49343 G30N60A4 transistor LD26 TA49373 PDF

    Untitled

    Abstract: No abstract text available
    Text: HGT1S20N60C3S9A Data Sheet August 2003 45A, 600V, UFS Series N-Channel IGBT Features This family of MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar


    Original     		HGT1S20N60C3S9A 150oC. TA49178. PDF

    G40N60B3

    Abstract: No abstract text available
    Text: HGTG40N60B3 Data Sheet November 2004 70A, 600V, UFS Series N-Channel IGBT Features The HGTG40N60B3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar


    Original     		HGTG40N60B3 HGTG40N60B3 150oC. 100ns 150oC G40N60B3 PDF

    G40N60

    Abstract: HGTG40N60B3 equivalent g40n60b g40n60b3 hgtg40n60b3 TA49052 LD26 RHRP3060 transistor* igbt 70A 300 V DSA003678
    Text: HGTG40N60B3 Data Sheet December 2001 70A, 600V, UFS Series N-Channel IGBT Features The HGTG40N60B3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar


    Original     		HGTG40N60B3 HGTG40N60B3 150oC. 100ns 150oC G40N60 HGTG40N60B3 equivalent g40n60b g40n60b3 TA49052 LD26 RHRP3060 transistor* igbt 70A 300 V DSA003678 PDF

    g30n60b3

    Abstract: HGTG30N60B3 HGTG30N60B3D LD26 TA49170
    Text: HGTG30N60B3 Data Sheet November 2004 60A, 600V, UFS Series N-Channel IGBT Features The HGTG30N60B3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar


    Original     		HGTG30N60B3 HGTG30N60B3 150oC. 150oC g30n60b3 HGTG30N60B3D LD26 TA49170 PDF

    g30n60c3

    Abstract: TA49051 HGTG30N60C3 LD26 RHRP3060 g30n60
    Text: HGTG30N60C3 Data Sheet January 2000 63A, 600V, UFS Series N-Channel IGBT Features The HGTG30N60C3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar


    Original     		HGTG30N60C3 HGTG30N60C3 150oC. 230ns 150oC g30n60c3 TA49051 LD26 RHRP3060 g30n60 PDF

    g30n60b3

    Abstract: HGTG30N60B3 GE 443 HGTG30N60B3D LD26 TA49170 G30N60
    Text: HGTG30N60B3 Data Sheet November 2000 60A, 600V, UFS Series N-Channel IGBT Features The HGTG30N60B3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar


    Original     		HGTG30N60B3 HGTG30N60B3 150oC. 150oC g30n60b3 GE 443 HGTG30N60B3D LD26 TA49170 G30N60 PDF

    G40N60

    Abstract: G40N60B3 HGTG40N60B3 equivalent HGTG40N60B3 LD26 RHRP3060 TA49052 g40n60b3 igbt
    Text: HGTG40N60B3 Data Sheet November 2004 70A, 600V, UFS Series N-Channel IGBT Features The HGTG40N60B3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar


    Original     		HGTG40N60B3 HGTG40N60B3 150oC. 100ns 150oC G40N60 G40N60B3 HGTG40N60B3 equivalent LD26 RHRP3060 TA49052 g40n60b3 igbt PDF

    Untitled

    Abstract: No abstract text available
    Text: HGTG30N60B3 Data Sheet November 2004 60A, 600V, UFS Series N-Channel IGBT Features The HGTG30N60B3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar


    Original     		HGTG30N60B3 HGTG30N60B3 150oC. 150oC PDF

    G30N60B3

    Abstract: GE 443 HGTG30N60B3 HGTG30N60B3D LD26 TA49170
    Text: HGTG30N60B3 Data Sheet December 2001 60A, 600V, UFS Series N-Channel IGBT Features The HGTG30N60B3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar


    Original     		HGTG30N60B3 HGTG30N60B3 150oC. 150oC G30N60B3 GE 443 HGTG30N60B3D LD26 TA49170 PDF

    G30N60B3

    Abstract: HGTG30N60B3 LD26 TA49170
    Text: HGTG30N60B3 Data Sheet January 2000 60A, 600V, UFS Series N-Channel IGBT Features The HGTG30N60B3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar


    Original     		HGTG30N60B3 HGTG30N60B3 150oC. 150oC G30N60B3 LD26 TA49170 PDF

    HGTG40N60B3 equivalent

    Abstract: G40N60 g40n60b3 HGTG40N60B3 transistor C110 LD26 RHRP3060 TA49052 g40n6
    Text: HGTG40N60B3 Data Sheet January 2000 70A, 600V, UFS Series N-Channel IGBT Features The HGTG40N60B3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar


    Original     		HGTG40N60B3 HGTG40N60B3 150oC. 100ns 150oC HGTG40N60B3 equivalent G40N60 g40n60b3 transistor C110 LD26 RHRP3060 TA49052 g40n6 PDF

    G30N60

    Abstract: TA49051 G30N60C3 HGTG30N60C3 LD26 RHRP3060 igbts
    Text: HGTG30N60C3 Data Sheet December 2001 63A, 600V, UFS Series N-Channel IGBT Features The HGTG30N60C3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar


    Original     		HGTG30N60C3 HGTG30N60C3 150oC. 230ns 150oC G30N60 TA49051 G30N60C3 LD26 RHRP3060 igbts PDF

    G40N60

    Abstract: g40n60b3 HGTG40N60B3 equivalent TA49052 g40n60b HGTG40N60B3 LD26 RHRP3060
    Text: HGTG40N60B3 Data Sheet August 2003 70A, 600V, UFS Series N-Channel IGBT Features The HGTG40N60B3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar


    Original     		HGTG40N60B3 HGTG40N60B3 150oC. 100ns 150oC G40N60 g40n60b3 HGTG40N60B3 equivalent TA49052 g40n60b LD26 RHRP3060 PDF

    g30n60b3

    Abstract: G30N60 HGTG30N60B3 TA49170 HGTG30N60B3D LD26 DIODE B2 IC2560
    Text: HGTG30N60B3 Data Sheet August 2003 60A, 600V, UFS Series N-Channel IGBT Features The HGTG30N60B3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar


    Original     		HGTG30N60B3 HGTG30N60B3 150oC. 150oC g30n60b3 G30N60 TA49170 HGTG30N60B3D LD26 DIODE B2 IC2560 PDF

    2sc 1740 TRANSISTOR equivalent

    Abstract: 40HFL60 IRGMC40F 480V1
    Text: International Hg] Rectifier PD-9.716A IRGMC40F INSULATED GATE BIPOLAR TRANSISTOR Fast Speed IGBT Description Product Summary Insulated Gate Bipolar Transistors IGBTs from International Rectifier have higher current den­ sities than comparable bipolar transistors, while


    OCR Scan     		pd96a IRGMC40F IRGMC40FD IRGMC40FU MIL-S-19500 O-254 2sc 1740 TRANSISTOR equivalent 40HFL60 IRGMC40F 480V1 PDF