microcontroller based inverter
Abstract: microchip inverter laser diode samsung microchip inverter application notes DK-2750 TB061 200B 2.5v zener
Text: TB061 Bipolar PICmicro Power Systems SELF DRIVEN CHARGE PUMP Author: Joseph Julicher Microchip Technology Inc. BIPOLAR PICMICRO POWER SYSTEMS Introduction On occasion, it is convenient to power a PICmicro microcontroller from a bipolar supply. This allows an
|
Original
|
PDF
|
TB061
RS-232
D-85737
DS91061A-page
microcontroller based inverter
microchip inverter
laser diode samsung
microchip inverter application notes
DK-2750
TB061
200B
2.5v zener
|
prom 32x8
Abstract: GDFP2-F16 82s123 philips GDIP1-T16 82s123 82S123/BEA TRANSISTORS 123A 82S23 S23B GDIP1T-16
Text: Philips Semiconductors Military Bipolar Memory Products Product specification 82S23/S23A/S23B 82S123/123A/123B 256-bit TTL bipolar PROM 32x8 APPLICATIONS DESCRIPTION • Prototyping/volume production • Sequential controllers • Format conversion • Hardwired algorithms
|
Original
|
PDF
|
82S23/S23A/S23B
82S123/123A/123B
256-bit
82S23
82S123
500ns
prom 32x8
GDFP2-F16
82s123 philips
GDIP1-T16
82S123/BEA
TRANSISTORS 123A
S23B
GDIP1T-16
|
82s141
Abstract: 82S141/BKA mux 8 to 1 timing 8 bit ttl mux 8 INPUT 4 OUTPUT MUX GDFP2-F24
Text: Philips Semiconductors Military Bipolar Memory Products Product specification 4K-bit TTL bipolar PROM 512x8 82S141 • Microprogramming • Hardwired algorithms • Control store • Random logic • Code conversion FEATURES • Address access time: 90ns max
|
Original
|
PDF
|
512x8)
82S141
82S141
500ns
82S141/BKA
mux 8 to 1 timing
8 bit ttl mux
8 INPUT 4 OUTPUT MUX
GDFP2-F24
|
MIC5205-3.0
Abstract: TC1014 TC1015 TC1054 TC1055 TC1070 TC1071 TC1185 TC1186 TC1187
Text: M AN766 Pin-Compatible CMOS Upgrades to Bipolar LDOs Author: SUPPLY CURRENT: CMOS VS. BIPOLAR Don Alfano, Danny Alred, Abid Hussain and Paul Paglia, Microchip Technology Inc. INTRODUCTION Bipolar low dropout regulators LDOs have become common place in a variety of portable applications,
|
Original
|
PDF
|
AN766
D-85737
DS00766B-page
MIC5205-3.0
TC1014
TC1015
TC1054
TC1055
TC1070
TC1071
TC1185
TC1186
TC1187
|
prom 256x4 bit
Abstract: GDIP1-T16 82S129A/BEA 82S126A 82S129A GDFP2-F16 bipolar PROM 32 x 32 matrix
Text: Philips Semiconductors Military Bipolar Memory Products Product specification 82S126A 82S129A 1K-bit TTL bipolar PROM 256x4 FEATURES DESCRIPTION • Address access time: 35ns max • Input loading: -150µA max • On-chip address decoding • Output options:
|
Original
|
PDF
|
82S126A
82S129A
256x4)
82S126A
82S129A
82S126A:
82S129A:
500ns
prom 256x4 bit
GDIP1-T16
82S129A/BEA
GDFP2-F16
bipolar PROM
32 x 32 matrix
|
SIGNETICS
Abstract: N82S137 signetics bipolar memory cross reference N82S191 n82s25 TBP28P86 74S289 N82S141 N82S129 TBP24S41
Text: MAY 1982 BIPOLAR MEMORY DIVISION BIPOLAR MEMORY CROSS REFERENCE BIPOLAR MEMORY CROSS REFERENCE Continued MOTOROLA MCM10149 MCM7620 MCM7621 MCM7643C MCM7641C MCM7681C MCM82708C MCM7685C 4064 4256 10422 10470 SIG NETICS T.l. SIG NETICS *10149 N82S130 N82S131
|
OCR Scan
|
PDF
|
MCM10149
MCM7620
N82S130
MCM7621
N82S131
MCM7643C
N82S137
N82HS137
MCM7641C
N82S141
SIGNETICS
N82S137
signetics bipolar memory cross reference
N82S191
n82s25
TBP28P86
74S289
N82S141
N82S129
TBP24S41
|
74s* programming
Abstract: N82S16 prom 256x4 bit MCM10149 MCM7620 MCM7621 MCM7641C MCM7643C MCM7681C N82HS137
Text: MAY 1982 BIPOLAR MEMORY DIVISION BIPOLAR M EM ORY CROSS REFERENCE BIPOLAR M EM O RY CROSS REFERENCE Continued MOTOROLA MCM10149 MCM7620 MCM7621 MCM7643C MCM7641C MCM7681C MCM82708C MCM7685C 4064 4256 10422 10470 SIGNETICS T.l. SIGNETICS *10149 N82S130 N82S131
|
OCR Scan
|
PDF
|
MCM10149
MCM7620
N82S130
MCM7621
N82S131
MCM7643C
N82S137
N82HS137
MCM7641C
N82S141
74s* programming
N82S16
prom 256x4 bit
MCM10149
MCM7681C
N82HS137
|
N82S131
Abstract: N82S141 n82s123 MCM10149 MCM7620 MCM7621 MCM7641C MCM7643C MCM7681C N82HS137
Text: MAY 1982 BIPOLAR MEMORY DIVISION BIPOLAR MEMORY CROSS REFERENCE BIPOLAR M EM O RY CROSS REFERENCE Continued MOTOROLA MCM10149 MCM7620 MCM7621 MCM7643C MCM7641C MCM7681C MCM82708C MCM7685C 4064 4256 10422 10470 SIG NETICS T.l. SIG NETICS *10149 N82S130 N82S131
|
OCR Scan
|
PDF
|
MCM10149
MCM7620
N82S130
MCM7621
N82S131
MCM7643C
N82S137
N82HS137
MCM7641C
N82S141
N82S131
N82S141
n82s123
MCM10149
MCM7681C
N82HS137
|
26 SIGNETICS
Abstract: 32X2 32X8 82S21 74181 pin configuration
Text: MAY 1982 BIPOLAR MEMORY DIVISION 64-BIT BIPOLAR WRITE-WHILE-READ RAM 32 x 2 TIMING DIAGRAMS 2-10 (C on td ) Signetics 82S21 (O.C.) BIPOLAR MEMORY DIVISION MAY 1982 64-BIT BIPOLAR WRITE-WHILE-READ RAM ( 3 2 x 2 ) 82S21 (O .C .) TYPICAL APPLICATION BASIC 8-B IT FULLY BUFFERED A C C U M ULATO R
|
OCR Scan
|
PDF
|
64-BIT
82S21
82S33
64-B1T
26 SIGNETICS
32X2
32X8
82S21
74181 pin configuration
|
8x305
Abstract: BIPOLAR MEMORY
Text: Signetics 8X350-40 2K-Bit TTL Bipolar RAM 256 x 8 Military Bipolar Memory Products Product Specification PIN CONFIGURATION DESCRIPTION FEATURES The 8X350-40 bipolar RAM is designed principally as a working storage element in an 8X305 based system. Internal circuitry
|
OCR Scan
|
PDF
|
8X350-40
8X350-40
8X305
8X305,
8X350
8X37X
BIPOLAR MEMORY
|
ram 256x8
Abstract: N8X350 8X350 8X300 N8X350F 8X305 S8X350 SC10 8x300 Signetics Application Notes sc1012
Text: MAY 1982 BIPOLAR MEMORY DIVISION 2048-BIT BIPOLAR RAM 256 X 8 DESCRIPTION 8X350 (T.S.) TYPICAL I/O STRUCTURE PIN CONFIGURATION The 8X350 bipolar RAM is designed p rinci p ally as a w orking sto ra g e elem ent in an 8X300 based system . Internal circuitry is
|
OCR Scan
|
PDF
|
2048-BIT
256x8)
8X350
8X350
8X300
8X300,
N8X350-F,
S8X350-F.
ram 256x8
N8X350
N8X350F
8X305
S8X350
SC10
8x300 Signetics Application Notes
sc1012
|
8X350
Abstract: F0380 8x305
Text: Signetics 8X350 2K-Bit TTL Bipolar RAM 256 x 8 Military Bipolar Memory Products Product Specification DESCRIPTION FEATURES The 8X350 bipolar R A M is designed prin cipally as a working storage element in an 8X305 based system. Internal circuitry is provided for direct use in 8X305 applica
|
OCR Scan
|
PDF
|
8X350
8X350
8X305
8X305,
470tl,
F0380
|
8 bit ttl mux
Abstract: 82HS321 82HS321A
Text: Philips Semiconductors Military Bipolar Memory Products Product specification 32K-bit TTL bipolar PROM 4096 x 8 82HS321A FEATURES APPLICATIONS DESCRIPTION • Address access time: • Prototyping/volume production The 82HS321 is field programmable, which
|
OCR Scan
|
PDF
|
32K-bit
82HS321A
82HS321
-250nA
500ns
711Gfl2b
711002b
8 bit ttl mux
82HS321A
|
GDFP2-F24
Abstract: 82HS321 82HS321A
Text: Philips Semiconductors Military Bipolar Memory Products Product specification 32K-bit TTL bipolar PROM 4096 x 8 82HS321A FEATURES APPLICATIONS DESCRIPTION • Address access time: • Prototyping/volume production The 82HS321 is field programmable, which
|
OCR Scan
|
PDF
|
32K-bit
82HS321A
82HS321
-250nA
500ns
711Dfl2fa
711002b
GDFP2-F24
82HS321A
|
|
|
SIGNETICS prom
Abstract: No abstract text available
Text: 82S147B Signetics 4K-Bit TTL Bipolar PROM Military Bipolar Memory Products Product Specification DESCRIPTION FEATURES The 82S147B is field-programmable, which means that custom patterns are immediately available by following the Signetics Generic Ifusing procedure. The
|
OCR Scan
|
PDF
|
82S147B
82S147B
512x8)
SIGNETICS prom
|
Signal Path designer
Abstract: No abstract text available
Text: Testing High-Performance Advanced Micro Devices Bipolar Memory INTRODUCTION During the last several years, the state-of-the art of TTL compatible bipolar memory integrated circuits has advanced very rapidly. Device complexity has increased dramatically not
|
OCR Scan
|
PDF
|
|
10P256
Abstract: PROM32 10P256F
Text: 10P256 256—Bit ECL Bipolar PROM Preliminary Specification Bipolar Memory Products DESCRIPTION FEATURES The 10P256 is field programmable, meaning that custom patterns are imme diately available by following the Signetics Generic IV Programming procedure. The
|
OCR Scan
|
PDF
|
10P256
10P256
256-Bit
PROM32
10P256F
|
82S131
Abstract: GDFP2-F16 GDIP1-T16 82S130A 82S131A
Text: Product specification Philips Semiconductors Military Bipolar Memory Products 2K-bit TTL bipolar PROM 512 x 4 82S131A DESCRIPTION FEATURES The 82S130A and 82S131A are field-programmable, which means that custom patterns are immediately available by following the
|
OCR Scan
|
PDF
|
82S130A
82S131A
-150pA
82S130A:
82S131A:
270ft
82S131
GDFP2-F16
GDIP1-T16
|
Signetics 82S191
Abstract: 82S191 82S191A signetics generic procedure
Text: Signetics 82S191, 82S191A Military Bipolar Memory Products Product Specification 16K-Bit TTL Bipolar PROM DESCRIPTION The 82S191 and 82S191A are field programmable, which means that custom patterns are immediately available by following the Signetics Generic I fusing
|
OCR Scan
|
PDF
|
82S191,
82S191A
82S19
100ns
82S191A:
16K-Bit
82S191
82S191A
Signetics 82S191
signetics generic procedure
|
82S141/8708+prom
Abstract: No abstract text available
Text: Philips Semiconductors Military Bipolar Memory Products Product specification 4K-bit TTL bipolar PROM 512 x 8 82S141 FEATURES • Microprogramming • Address access time: 90ns max • Hardwired algorithms • Input loading: -150jiA max • Control store
|
OCR Scan
|
PDF
|
82S141
-150jiA
82S141
1002b
711002b
82S141/8708+prom
|
CQCC2-N28
Abstract: 82S181A 1024 x 4 prom GDIP1-T24
Text: Product specification Philips Semiconductors Military Bipolar Memory Products 82S181A 8K-bit TTL bipolar PROM 1024 x 8 DESCRIPTION FEATURES The 82S181A is field-programmable, which means that custom patterns are immediately available by following the Philips Generic I
|
OCR Scan
|
PDF
|
82S181A
82S181A
500ns
711Qfi2b
CQCC2-N28
1024 x 4 prom
GDIP1-T24
|
CE0102
Abstract: 82S181 CQCC2-N28
Text: Product specification Philips Semiconductors Military Bipolar Memory Products 8K-bit TTL bipolar PROM 1024 x 8 82S181 DESCRIPTION FEATURES The 82S181 is field-programmable, which means that custom patterns are immediately available by following the Philips Generic I
|
OCR Scan
|
PDF
|
82S181
82S181
500ns
0Gfl5074
711002b
CE0102
CQCC2-N28
|
GDIP1-T16
Abstract: GDFP2-F16 82S23 S23B 82s123 philips 82S123/BEA 82S123 82s123b PROM32 82S23A/BFA
Text: Philips Semiconductors Military Bipolar Memory Products Product specification 82S23/S23A/S23B 82S123/123A/123B 256-bit TTL bipolar PROM 32 x 8 APPLICATIONS DESCRIPTION • Prototyping/volume production The 82S23 and 82S123 are field-programmable, which means that
|
OCR Scan
|
PDF
|
256-bit
82S23/S23A/S23B
82S123/123A/123B
82S23:
82S123
82S23
500ns
Auqust24.
GDIP1-T16
GDFP2-F16
S23B
82s123 philips
82S123/BEA
82s123b
PROM32
82S23A/BFA
|
signetics PROM
Abstract: 82HS321A 82HS321B Signetics MUX
Text: 82HS321A/82HS321B Signetics 32K-Bit TTL Bipolar PROM 4096 X 8 Military Bipolar Memory Products DESCRIPTION The 82HS321 is field programmable, which means that custom patterns are immediately available by following the Signetics Generic II fusing procedure. The
|
OCR Scan
|
PDF
|
82HS321A/82HS321B
32K-Bit
82HS321
signetics PROM
82HS321A
82HS321B
Signetics MUX
|
