transistor ZTX108
Abstract: replacement ztx108 Lamps FLASH TUBE xenon list of super E line NPN Transistor Mosfet replacement for 2N3055 PNP Relay Driver automotive relay driver circuit using darlington xenon linear flash lamps 2N3055 TO220 2N3055 power circuit
Text: Application Note 4 Issue 2 January 1996 Centre Collector E-Line Applications An Overview of Package Capability and Applications Advantages David Bradbury Introduction Product Range This Application Note describes the product range, important package characteristics including construction
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ZVN2120C
FXTA42
transistor ZTX108
replacement ztx108
Lamps FLASH TUBE xenon
list of super E line NPN Transistor
Mosfet replacement for 2N3055
PNP Relay Driver
automotive relay driver circuit using darlington
xenon linear flash lamps
2N3055 TO220
2N3055 power circuit
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g1 smd transistor
Abstract: SMD transistor r24 SMD TRANSISTOR G1 Diode GP 622 3 pin SMD hall sensor g3 smd transistor smd transistor pinout sot23 SMD Transistor nc
Text: ZXBM1015EV1 ZXBM1015EV1 USER GUIDE DESCRIPTION The ZXBM1015EV1 is a demonstration board for evaluating the ZXBM1015 Single Phase Brushless DC Motor Controller. PWM input control, thermistor input control or voltage input control can be selected simply by inserting a jumper.
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ZXBM1015EV1
ZXBM1015EV1
ZXBM1015
g1 smd transistor
SMD transistor r24
SMD TRANSISTOR G1
Diode GP 622
3 pin SMD hall sensor
g3 smd transistor
smd transistor pinout sot23
SMD Transistor nc
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transistor NEC K2500
Abstract: nec k2500 NEC K2500 Transistor component NEC K2500 mosfet CD4558 cq met t3.15A 250V k2500 N-Channel MOSFET c5042f TO-92 78L05 voltage regulator pin configuration i ball 450 watt smps repairing
Text: A merican Gaming and Electronics, Inc. represents over 200 vendors and carries thousands of items. This catalog is just a partial listing of our products. If for any reason, you do not see the item s you are searching for, please call your local sales representative. The sales
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2n3054 pnp
Abstract: TO77 package 2N3411
Text: Part number search for devices beginning "2N3054" Datasheets are downloaded as Acrobat PDF files. Semelab Home Bipolar Products PRODUCT Polarity Package VCEO IC cont HFE(min) HFE(max) @ VCE/IC FT PD 2N3054
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html/2N3054
2N3054"
2N3054
2N3054A
2N3054-JQR-B
2N3250"
2N3250
40MHz
2n3054 pnp
TO77 package
2N3411
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40841
Abstract: 40841 MOSFET fsl9230 MIL-S-19500 1E14 2E12 FSL9230D FSL9230R Rad hard MOSFETS in Harris
Text: S E M I C O N D U C T O R FSL9230D, FSL9230R Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs June 1997 Features Package • 3A, -200V, rDS ON = 1.50Ω • Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si) • Single Event - Safe Operating Area Curve for Single Event Effects
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FSL9230D,
FSL9230R
-200V,
36MeV/mg/cm2
O-205AF
1-800-4-HARRIS
40841
40841 MOSFET
fsl9230
MIL-S-19500
1E14
2E12
FSL9230D
FSL9230R
Rad hard MOSFETS in Harris
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1E14
Abstract: 2E12 FSL9230D FSL9230D1 FSL9230D3 FSL9230R FSL9230R1
Text: FSL9230D, FSL9230R 3A, -200V, 1.50 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs June 1998 Features Description • 3A, -200V, rDS ON = 1.50Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event
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FSL9230D,
FSL9230R
-200V,
O-205AF
254mm)
FSL9230R
1E14
2E12
FSL9230D
FSL9230D1
FSL9230D3
FSL9230R1
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integrated circuits equivalents list
Abstract: Rad Hard in Fairchild for MOSFET
Text: FSL9230D, FSL9230R 3A, -200V, 1.50 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs December 2001 Features Description • 3A, -200V, rDS ON = 1.50Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event
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FSL9230D,
FSL9230R
-200V,
integrated circuits equivalents list
Rad Hard in Fairchild for MOSFET
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bipolar transistor 160V 3A
Abstract: 2N6686
Text: 2N6686 NPN BIPOLAR MULTI-EPITAXIAL POWER TRANSISTOR 25.15 0.99 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 1 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197)
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2N6686
T0-204AA)
bipolar transistor 160V 3A
2N6686
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1E14
Abstract: 2E12 FSL9230D FSL9230D1 FSL9230D3 FSL9230R FSL9230R1 40842
Text: FSL9230D, FSL9230R 3A, -200V, 1.50 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs June 1998 Features Description • 3A, -200V, rDS ON = 1.50Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event
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FSL9230D,
FSL9230R
-200V,
1E14
2E12
FSL9230D
FSL9230D1
FSL9230D3
FSL9230R
FSL9230R1
40842
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transistor r1009
Abstract: ctv350s ZD405 OPT601 r63302 ic902 TH901 q702 transistor w17 transistor philips carbon film resistor
Text: SERVICE MANUAL 80 cm CTV Effective: MAY 2000 CTM805SVSERV PART NUMBER 107-800455-4G 113-101005-17 113-102005-17 113-103005-17 113-109005-17 113-473005-17 113-682005-17 127-476042-0D 130-600101-0G 131-210719-19 131-230945-00 133-803010-33 172-726000-99 190-R63300-02
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CTM805SVSERV
107-800455-4G
127-476042-0D
130-600101-0G
190-R63300-02
774-R63301-00
774-R63302-00
774-R63303-00
849-R63301-00
892-R63301-06
transistor r1009
ctv350s
ZD405
OPT601
r63302
ic902
TH901
q702 transistor
w17 transistor
philips carbon film resistor
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Untitled
Abstract: No abstract text available
Text: JANSR2N7396 S E M I C O N D U C T O R Formerly Available As FSL230R4, Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs January 1998 Features Description • 5A, 200V, rDS ON = 0.460Ω The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs
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JANSR2N7396
1-800-4-HARRIS
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relay 12v 100A
Abstract: 1E14 2E12 FSL230R4 JANSR2N7396
Text: JANSR2N7396 Formerly FSL230R4 5A, 200V, 0.460 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 Features Description • 5A, 200V, rDS ON = 0.460Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event
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JANSR2N7396
FSL230R4
relay 12v 100A
1E14
2E12
FSL230R4
JANSR2N7396
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1E14
Abstract: 2E12 FSL923A0R4 JANSR2N7439
Text: JANSR2N7439 Data Sheet Formerly Available As FSL923A0R4, Radiation Hardened, SEGR Resistant, P-Channel Power MOSFETs The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications.
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JANSR2N7439
FSL923A0R4,
1E14
2E12
FSL923A0R4
JANSR2N7439
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irf610 mosfet
Abstract: IRF610 power MOSFET IRF610 4V801
Text: IRF610 Data Sheet Title F61 bt 3A, 0V, 00 m, June 1999 3.3A, 200V, 1.500 Ohm, N-Channel Power MOSFET Features This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of
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IRF610
IRF610
O-220AB
TB334
irf610 mosfet
power MOSFET IRF610
4V801
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IRF9210
Abstract: darlington NPN 600V 8a transistor fet 10a 600v darlington NPN 600V 12a transistor transistor IRF9640 N-CH POWER MOSFET TO-92 600v 12A TO220F NPN Transistor 600V 5A TO-220 transistor irf620 KSH117-1
Text: PRODUCT INDEX FUNCTIONAL SELECTION GUIDE BIPOLAR TRANSISTOR DESCRIPTION MRTNO. 2N3904 2N3906 2N4401 2N4403 2N5087 2N5088 2N5551 2N6515 KSP06 KSP10 KSP13 KSP2222A KSP27 KSP2907A KSP42 KSP44 KSP56 KSP92 KST10-TF KST2222A-TF KST2484-TF KST2907-TF KST3904-TF KST3906-TF
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2N3904
2N3906
2N4401
2N4403
2N5087
2N5088
2N5551
2N6515
KSP06
KSP10
IRF9210
darlington NPN 600V 8a transistor
fet 10a 600v
darlington NPN 600V 12a transistor
transistor IRF9640
N-CH POWER MOSFET TO-92
600v 12A TO220F
NPN Transistor 600V 5A TO-220
transistor irf620
KSH117-1
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vogt
Abstract: fi324 Resistor R1206 vogt -sumida 200v 3A schottky 380v bcb56b C0805 100nf capacitor kmg KMG 200V
Text: Ref. Q.ty CONI 1 Variant Clamp, WECO, 2 pole, horizontal, 1.5mm2, 380V, 15A CON2 1 Clamp, WECO, 3 pole, horizontal, 1.5mm2, 380V, 15A C1 1 22pF Electrolytic capacitor, Nippon Chemi-Con, KMG 400V, 20% C2 1 10pF Electrolytic capacitor, Nippon Chemi-Con, KMG 400V, 20%
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OCR Scan
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40842
Abstract: No abstract text available
Text: ffj h a fr fr is U FSL9230D, S E M I C O N D U C T O R 3A, -200V, 1.50 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs June 1998 Features Description • 3A, -200V, ros QN = 1.50Q The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs
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OCR Scan
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FSL9230D,
-200V,
MIL-STD-750,
MIL-S-19500,
-160V,
100ms;
500ms;
40842
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IFRZ44
Abstract: IRFZ43 KA3842D irf510 switch TRANSISTOR MC7805CT KA336Z Transistor mc7812ct high voltage pnp transistor 700v IRFZ44 PNP KS82C670N
Text: PRODUCT INDEX ALPHA NUMERIC INDEX Part numbers In BOLD are preferred standard parts. PART NO. 2N3904 2N3906 2N4400 2N4401 2N4402 2N4403 2N5087 2NS088 2NS551 2N6S15 IRF510 IRF511 IRF512 IRF513 IRF520 IRF521 IRF522 IRF523 IRFS30 IRF531 IRF532 IRF533 IRF540 IRF541
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OCR Scan
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2N3904
2N3906
2N4400
2N4401
2N4402
2N4403
2N5087
2NS088
2NS551
2N6S15
IFRZ44
IRFZ43
KA3842D
irf510 switch
TRANSISTOR MC7805CT
KA336Z
Transistor mc7812ct
high voltage pnp transistor 700v
IRFZ44 PNP
KS82C670N
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Untitled
Abstract: No abstract text available
Text: JANSR2N7396 33 HÄf^as? Formerly FSL230R4 5A, 200V, 0.460 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 Features Description • 5A, 200V, rDS ON = 0.46012 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs
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OCR Scan
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FSL230R4
JANSR2N7396
MIL-STD-750,
MIL-S-19500,
500ms;
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diode PJ 65 MG
Abstract: 5a 12v regula
Text: 33 FSL230D, FSL230R 5A, 200V, 0.460 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Features Description • 5A, 200V, rDS 0N = 0.460i2 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space
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OCR Scan
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460i2
FSL230D,
FSL230R
MIL-STD-750,
MIL-S-19500,
500ms;
diode PJ 65 MG
5a 12v regula
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Untitled
Abstract: No abstract text available
Text: FSS9230D, FSS9230R HARRIS S E M I C O N D U C T O R 4A, -200V, 1.60 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs June 1998 Description Features • 4A, -200V, rDs ON = 1.60£i • Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si) • Single Event
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OCR Scan
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FSS9230D,
FSS9230R
-200V,
MIL-STD-750,
MIL-S-19500,
-160V,
100ms;
500ms;
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PDF
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2sb1569a
Abstract: No abstract text available
Text: 2 S B 1 27 5 / 2 S B 1 2 3 6 A / 2 S B 1 5 6 9 A / 2 S B 1 186A Transistors 2 S D 2 2 1 1 / 2S D 1 9 1 8 / 2S D 1 8 5 7 A / 2 S D 24 00A / 2S D 17 63A I Power Transistor — 160V, —1.5A 2SB1275 / 2SB1236A / 2SB1569A / 2SB 1186A •A b s o lu te maximum ratings ( T a = 2 5 t )
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OCR Scan
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2SB1275
2SB1236A
2SB1569A
0Dlb713
O-220FN
O-220FN
O220FP
T0-220FP,
O-220FP.
7020c
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Untitled
Abstract: No abstract text available
Text: FSL9230D, FSL9230R 3A, -200V, 1.50 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs June 1998 Features Description • 3A, -200V, ros ON = 1 -50ii The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs
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OCR Scan
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FSL9230D,
FSL9230R
-200V,
O-205AF
254mm)
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hitachi mosfet power amplifier audio application
Abstract: 2SK215 equivalent PM4550C 2sd667 2sb647 2SD667 equivalent 2SJ99 K429 HITACHI 2SJ56 k399 Hitachi 2sk176 2sj56
Text: APPLICATION NOTE 1-9 Pov/er MOS FET • ' Bo* 3 V•? * ¿ 'S r ^ m is y 701 S ! Reo N o 64 1688 07 P O BO X 1194. R A N D tíU R G , 2 1 2 5 M F K E N T H O US E D O V E R S T R E E T . R A N D B U R G T V L , 21 9 4 0 1 1 7 8 9 1 4 0 0 /2 T E L E X 4 -2 0 4 5 2 F A X 1 0 1 1 )7 8 7 0 2 6 3
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OCR Scan
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RE79-24
hitachi mosfet power amplifier audio application
2SK215 equivalent
PM4550C
2sd667 2sb647
2SD667 equivalent
2SJ99
K429
HITACHI 2SJ56
k399
Hitachi 2sk176 2sj56
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