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Winbond Electronics Corp W949D2DBJX5E DRAM 512Mb LPDDR, x32, 200MHz
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	W949D2DBJX5E		75			1 $3.37 10 $3.06 100 $2.71 1000 $2.64 10000 $2.63	Buy Now
Winbond Electronics Corp W989D2DBJX6E DRAM 512Mb LPSDR, x32, 166MHz, 46nm
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	W989D2DBJX6E		15			1 $3.73 10 $3.38 100 $3 1000 $2.87 10000 $2.72	Buy Now
Vector Electronics & Technology Inc VMETBJ1 Datalogging & Acquisition BOARD TERMINATOR J1, PAIR
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	VMETBJ1					1 $149.32 10 $149.32 100 $149.32 1000 $149.32 10000 $149.32	Get Quote
Vector Electronics & Technology Inc VMETBJ1-P Datalogging & Acquisition BOARD TERMINATOR J1, PAIR, PARALLEL
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	VMETBJ1-P					1 $170.62 10 $154.63 100 $140.44 1000 $140.44 10000 $140.44	Get Quote
Winbond Electronics Corp W989D2DBJX6E TR DRAM 512Mb LPSDR, x32, 166MHz, 46nm T&R
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	W989D2DBJX6E TR					1 - 10 - 100 - 1000 - 10000 $2.59	Get Quote

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BJ ET Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
y5v 104z sec capacitor Abstract: Y5V 104Z sec LMK107BJ474K LMK316BJ335 lmk316f226z Y5V 104Z 200C2 M05 SMD LMK316F106Z LMK550F107ZM Text: HIGH CAPACITANCE MULTILAYER CERAMIC CAPACITORS Ni ELECTRODE BJ OPERATING TEMP. BJ K25VJ85C X7R K55VJ125C X5R K55VJ85C F K25VJ85C Y5V K30VJ85C F FEATURES YThe use of Nickel(Ni) as material for both the internal and external electrodes improves the solderability and heat resistance characteristics. This	Original	K25VJ85C K55VJ125C K55VJ85C K30VJ85C y5v 104z sec capacitor Y5V 104Z sec LMK107BJ474K LMK316BJ335 lmk316f226z Y5V 104Z 200C2 M05 SMD LMK316F106Z LMK550F107ZM	PDF
K25VJ85C Abstract: K55VJ85C FMMG 2 Text: アレイ形積層セラミックコンデンサ ARRAY TYPE MULTILAYER CERAMIC CAPACITOR BJ OPERATING TEMP. F BJ K25VJ85C X5R K55VJ85C F K25VJ85C Y5V K30VJ85C 特長 FEATURES Y4 circuits in 3216 package allows higher placement density and efficiency YThe capacitance in each circuit, F or B dielectric, is 1AF	Original	K25VJ85C K55VJ85C K30VJ85C Y32164 Y11AF 212f0805g 316f1206g 031M0 033M0 K25VJ85C K55VJ85C FMMG 2	PDF
GMK316 Abstract: FCX-01 Text: 大容量積層セラミックコンデンサ HIGH VALUE MULTILAYER CERAMIC CAPACITORS BJ OPERATING TEMP. BJ K25VJ85C X7R K55VJ125C X5R K55VJ85C F K25VJ85C Y5V K30VJ85C F 特長 FEATURES YThe use of Nickel Ni as material for both the internal and external electrodes improves the solderability and heat resistance characteristics. This	Original	K25VJ85C K55VJ125C K55VJ85C K30VJ85C 107type 47AFg, 212type 316N325N432type 107N212N316N325type GMK316 FCX-01	PDF
GMK325 Abstract: fcx0 Text: 大容量積層セラミックコンデンサ HIGH VALUE MULTILAYER CERAMIC CAPACITORS BJ OPERATING TEMP. BJ K25VJ85C X7R K55VJ125C X5R K55VJ85C F K25VJ85C Y5V K30VJ85C F 特長 FEATURES YThe use of Nickel Ni as material for both the internal and external electrodes improves the solderability and heat resistance characteristics. This	Original	K25VJ85C K55VJ125C K55VJ85C K30VJ85C 107type 47AFg, 212type 316N325N432type 325type GMK325 fcx0	PDF
taiyo yuden umk Abstract: JMK212B 22AF smd TMK316F JMK550BJ107MM Taiyo emk fcx0 36M0 FDK25 JMK212F Text: 大容量積層セラミックコンデンサ HIGH VALUE MULTILAYER CERAMIC CAPACITORS BJ OPERATING TEMP. BJ K25VJ85C X7R K55VJ125C X5R K55VJ85C F K25VJ85C Y5V K30VJ85C F 特長 FEATURES YThe use of Nickel Ni as material for both the internal and external electrodes improves the solderability and heat resistance characteristics. This	Original	K55VJ125C K55VJ85C K25VJ85C K30VJ85C taiyo yuden umk JMK212B 22AF smd TMK316F JMK550BJ107MM Taiyo emk fcx0 36M0 FDK25 JMK212F	PDF
JMK212BJ105K Abstract: LMK107BJ334 LMK107BJ474 JMK212F475ZD Text: 大容量積層セラミックコンデンサ HIGH VALUE MULTILAYER CERAMIC CAPACITORS BJ OPERATING TEMP. BJ K25VJ85C X7R K55VJ125C X5R K55VJ85C F K25VJ85C Y5V K30VJ85C F 特長 FEATURES YThe use of Nickel Ni as material for both the internal and external electrodes improves the solderability and heat resistance characteristics. This	Original	K25VJ85C K55VJ125C K55VJ85C K30VJ85C JMK212BJ105K LMK107BJ334 LMK107BJ474 JMK212F475ZD	PDF
p40x Abstract: 316TYPE f0035 Text: 大容量積層セラミックコンデンサ HIGH VALUE MULTILAYER CERAMIC CAPACITORS BJ OPERATING TEMP. BJ K25VJ85C X7R K55VJ125C X5R K55VJ85C F K25VJ85C Y5V K30VJ85C F 特長 FEATURES YThe use of Nickel Ni as material for both the internal and external electrodes improves the solderability and heat resistance characteristics. This	Original	K25VJ85C K55VJ125C K55VJ85C K30VJ85C 107type 47AFg, 212type 316N325N432N550type 107N212N316N325type p40x 316TYPE f0035	PDF
250v 104 J capacitor Abstract: No abstract text available Text: 中高耐圧積層セラミックコンデンサ MEDIUM-HIGH VOLTAGE MULTILAYER CERAMIC CAPACITOR OPERATING TEMP. BJ BJ K25VJ85C X5R K55VJ85C X7R K55VJ125C 特長 FEATURES Y内部電極にNi金属を使用しておりマイグレーションが発生せず、高信頼	Original	K25VJ85C K55VJ85C K55VJ125C 316f1206g 325f1210g 432f1812g K25V85 K55V125 K55V85 M20fMg 250v 104 J capacitor	PDF
4040l1 Abstract: No abstract text available Text: TISP4015L1AJ, TISP4030L1AJ, TISP4040L1AJ TISP4015L1BJ, TISP4030L1BJ, TISP4040L1BJ VERY LOW VOLTAGE BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS TISP40xxL1AJ/BJ VLV Overvoltage Protectors Low Capacitance ‘4015 . 28 pF	Original	TISP4015L1AJ, TISP4030L1AJ, TISP4040L1AJ TISP4015L1BJ, TISP4030L1BJ, TISP4040L1BJ TISP40xxL1AJ/BJ e/PI0229 4040l1	PDF
h3 do-214ac Abstract: 4015L GR-1089-CORE TISP4015L1AJ TISP4015L1BJ TISP4030L1AJ TISP4030L1BJ TISP4040L1BJ do-214ac footprint 4040L1 Text: TISP4015L1AJ, TISP4030L1AJ, TISP4040L1AJ TISP4015L1BJ, TISP4030L1BJ, TISP4040L1BJ VERY LOW VOLTAGE BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS TISP40xxL1AJ/BJ VLV Overvoltage Protectors Low Capacitance ‘4015 . 28 pF	Original	TISP4015L1AJ, TISP4030L1AJ, TISP4040L1AJ TISP4015L1BJ, TISP4030L1BJ, TISP4040L1BJ TISP40xxL1AJ/BJ h3 do-214ac 4015L GR-1089-CORE TISP4015L1AJ TISP4015L1BJ TISP4030L1AJ TISP4030L1BJ TISP4040L1BJ do-214ac footprint 4040L1	PDF
4015L1 Abstract: 4040L1 4015L 4030L1 h3 do-214ac DO-214AC SMA TISP4015L1BJ TISP4030L1AJ subscriber carrier module 100 sma 4040L Text: *R oH S CO M PL IA NT TISP4015L1AJ, TISP4030L1AJ, TISP4040L1AJ TISP4015L1BJ, TISP4030L1BJ, TISP4040L1BJ VERY LOW VOLTAGE BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS TISP40xxL1AJ/BJ VLV Overvoltage Protectors Low Capacitance ‘4015 . 28 pF	Original	TISP4015L1AJ, TISP4030L1AJ, TISP4040L1AJ TISP4015L1BJ, TISP4030L1BJ, TISP4040L1BJ TISP40xxL1AJ/BJ 401030L 4040L TISP4015L1BJ 4015L1 4040L1 4015L 4030L1 h3 do-214ac DO-214AC SMA TISP4015L1BJ TISP4030L1AJ subscriber carrier module 100 sma 4040L	PDF
GM76C256all Abstract: 16M-DRAM LT-860 GM23C400 GM76C28A GM23C810QA-12 LR-80 BFW12 GM23C8001 GM23C410 Text: FUNCTION GUIDE DRAM Capacity 1MBit Org 1W0 Type No 4Wt1 1Mk4 Current mA Power Supply Feature Package (m il) Avail 18DIP(300) NOW tCAC tA A Active S/B GM71C1000B/BJ/BZ-60 GM71C10008/BJ/BZ-70 GM71C 10OÛB/BJ/BZ-ÔO 60 70 80 20 20 25 30 35 40 90 eo 70 1 GM71C10006UBLJ/BLZ-60	OCR Scan	GM71C1000B/BJ/BZ-60 GM71C10008/BJ/BZ-70 GM71C GM71C10006UBLJ/BLZ-60 GM71C10006UBLJ/BLZ-70 GM71C10006UBLJ/BLZ-80 351MxB GM23C8000A/AF 32DIP 32SOP GM76C256all 16M-DRAM LT-860 GM23C400 GM76C28A GM23C810QA-12 LR-80 BFW12 GM23C8001 GM23C410	PDF
GM76C88AL FW Abstract: 71C4260 GM71G GM76C28A GM23C32000 LR-80 CLR-80 HR80 Tlr8 Text: FUNCTION GUIDE DRAM Capacity 1M Bit 4M Bit >rg Type No Max Access Tim e Current (mA Power Supply Feature tftAC U'AC Ia a Active GM71C1000B/BJ/BZ-60 60 20 30 90 GM71C1000B/BJ/BZ-70 70 20 35 80 GM71C1Q0ÜB/BJ/BZ-80 80 25 40 70 GM71C1000BL/BLJ/BLZ-60 60 20	OCR Scan	GM71C1000B/BJ/BZ-60 GM71C1000B/BJ/BZ-70 GM71C1Q0 B/BJ/BZ-80 GM71C1000BL/BLJ/BLZ-60 GM71C1OOOBL/BLJ/BLZ- GM71C1000BL/BIJ/BLZ-80 200uA) 512cydes/8ms 18DIP GM76C88AL FW 71C4260 GM71G GM76C28A GM23C32000 LR-80 CLR-80 HR80 Tlr8	PDF
Untitled Abstract: No abstract text available Text: ~P U "f Hz "7 ^ '7 Zl > X > "tfARRAY TYPE MULTILAYER CERAMIC CAPACITOR OPERATING TEMP. , BJ BJ —25— t-85°C X5R —55— h85°C j •4 circuits in 3216 package allows higher placement density and efficiency ■The capacitance in each circuit, F or B dielectric, is 1//F	OCR Scan	316TYPE J4K316BJ105MF J4K316BJ105M L4K212BJ104M J2K212BJ105M	PDF

cxk5863b Abstract: CXK5863BM Text: SONY CXK5863BP/BM/BJ -25/30/35 8192-word x 8-bit High Speed CMOS Static RAM D escription CXK5863BP 28 pin DIP Plastic CXK5863BP/BM/BJ are 65,536 bits high speed CMOS static RAMs organized as 8,192 words by 8-bit and operate from a single 5V supply. These devices are	OCR Scan	CXK5863BP/BM/BJ CXK5863BP 8192-word 25ns/30ns/35ns 300mW CXK5863BM CXK5863BJ cxk5863b CXK5863BM	PDF
Untitled Abstract: No abstract text available Text: 1,048,576 W O RD x PRELIMINARY 1 BIT DYN AM IC RAM D E SC R IP T IO N The TC511001BP/BJ/BZ/BFT is the new generation dynamic RAM organized 1,048,576 words by 1 bit. The TC511001BP/BJ/BZ/BFT utilizes TOSHIBA’S CMOS Silicon gate process technology as well as	OCR Scan	TC511001BP/BJ/BZ/BFT TC511001BP/BJ/BZ/BFT-60	PDF
BFT 50 TH Abstract: No abstract text available Text: PRELIMINARY 1,048,576 WORD x 1 BIT DYNAMIC RAM DESCRIPTION T he TC511002BP/BJ/BZ/BFT is th e new g en eratio n dynam ic RAM organized 1,048,576 words by 1 bit. T he TC511002BP/BJ/BZ/BFT utilizes TO SH IB A ’S CMOS Silicon gate process technology a s w ell as	OCR Scan	TC511002BP/BJ/BZ/BFT TC511002BP/BJ/BZ/BFT-60 BFT 50 TH	PDF
Untitled Abstract: No abstract text available Text: INTEGRATED TOSHIBA TOSHIBA M O S DIGITAL INTEGRATED CIRCUIT CIRCUIT TECHNICAL TC551664 BJ/BFT -12 TC551664 BJ/BFT-15 DATA SILICON GATE CM O S TENTATIVE 65,536-WORD BY 16-BIT CM O S STATIC RAM DESCRIPTION The TC551664BJ/BFT is a 1,048,576-bit high-speed static random access memory SRAM organized as 65,536	OCR Scan	TC551664 BJ/BFT-15 536-WORD 16-BIT TC551664BJ/BFT 576-bit SOJ44-P-400-1	PDF
Untitled Abstract: No abstract text available Text: 2 6 2 ,1 4 4 W O R D x4 PRELIMINARY B IT D Y N A M IC R A M DESCRIPTION The TC514258BP/BJ/BZ/BFT is the new generation dynamic RAM organized 262,144 words oy 4 bits. The TC514258BP/BJ/BZ/BFT utilizes TOSHIBA’S CMOS Silicon gate process technology as well as	OCR Scan	TC514258BP/BJ/BZ/BFT TC514258BP/BJ/BZ/BFT-60 TC514258BP/B /BZ/BFT-60	PDF
256KDRAM Abstract: st A122 a124 es Text: PRELIMINARY 1,048,576 W O RD x 1 BIT DYNAMIC RAM DESCRIPTION The TC511002BP/BJ/BZ/BFT is the new generation dynamic RAM organized 1,048,576 words by 1 bit. The TC511002BP/BJ/BZ/BFT utilizes TOSHIBA’S CMOS Silicon gate process technology as well as advanced circuit techniques to provide wide operating m argins, both internally and to the system user.	OCR Scan	TC511002BP/BJ/BZ/BFT TC511002BP/BJ/BZ/BFT-60 256KDRAM st A122 a124 es	PDF
a231 ax hen no Abstract: BFT te 04 A225 Text: TC514258BP/BJ/BZ/BFT-60 tli I k di llki'iilii in militi, lit Lit llit. lit i t i , i. 262,144 W O R D x4 BI T D Y N A M I C * . . . i l ., PRELIMINARY RAM DESCRIPTION T he TC514258BP/BJ/BZ/BFT is Che new g en eratio n dynam ic RAM organized 262,144 words oy 4 bits.	OCR Scan	TC514258BP/BJ/BZ/BFT-60 TC514258BP/BJ/BZ/BFT TC514258BP/rBJ/BZ/BFT 2G/20 a231 ax hen no BFT te 04 A225	PDF
Untitled Abstract: No abstract text available Text: PRELIMINARY 2 6 2 ,1 4 4 W O R D x 4 BIT D Y N A M IC R A M D ESC R IPTIO N The TC514266BP/BJ/BZ/BFT is the new generation dynamic RAM organized 262,144 words by 4 bits. The TC514266BP/BJ/BZ/BFT utilizes TOSHIBA’S CMOS Silicon gate process technology as well as	OCR Scan	TC514266BP/BJ/BZ/BFT	PDF
K316F Abstract: 325BJ106MN J684C K107B SFA10 325BJ CI047 Text: M iz -y ^ y 1] > ~ r > "tf HIGH VALUE MULTILAYER CERAMIC CAPACITORS BJ OPERATING TEMP. BJ —25-~+85°C X7R —55-“ +125°C X5R -5 5 -~+85°C F —25-+85°C Y5V - 3 0 - -+ 8 5 C p •W lUlNtôM fcfêfflU Ä ^ W IS B i:* "J * £ L T i b Z Z t l Z & t , ttÂ,	OCR Scan	LMK432F476Z JMK212BJ106M JMK316BJ226M JMK325BJ476M LMK432BJ226M JMK432BJ107M K316F 325BJ106MN J684C K107B SFA10 325BJ CI047	PDF
capacitor ttc 474 Abstract: ttc 474 M1-0410-5 Text: 4 * R E E fi JS “b ~y 5. v 0 =i > ~r > UMEDIUM-HIGH VOLTAGE MULTILAYER CERAMIC CAPACITOR OPERATING TEMP. BJ BJ —25-+85°C X5R —55-+85°C X7R - 5 5 - -+125°C # # m m m * r t s m s i c N i á í * u X a * s a > • The use of Nickel Ni) as material for internal electrodes almost completely	OCR Scan		PDF

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BJ ET Search Results

BJ ET Price and Stock

Winbond Electronics Corp W949D2DBJX5E

Winbond Electronics Corp W989D2DBJX6E

Vector Electronics & Technology Inc VMETBJ1

Vector Electronics & Technology Inc VMETBJ1-P

Winbond Electronics Corp W989D2DBJX6E TR

BJ ET Datasheets Context Search

y5v 104z sec capacitor

K25VJ85C

GMK316

GMK325

taiyo yuden umk

JMK212BJ105K

p40x

250v 104 J capacitor

4040l1

h3 do-214ac

4015L1

GM76C256all

GM76C88AL FW

Untitled

cxk5863b

Untitled

BFT 50 TH

Untitled

Untitled

256KDRAM

a231 ax hen no

Untitled

K316F

capacitor ttc 474