bjt specifications
Abstract: TRANSISTORS BJT list DG-2128 DG2128 POWER BJTs common base bjt DS-1639 CAMSEMI common emitter bjt TRANSISTOR REPLACEMENT table for transistor
Text: Power BJT Specification for RDFC Applications Application Note AN-2276 RDFC Circuit Description ABSTRACT This application note provides key parametric requirements of power BJTs suitable for Resonant Discontinuous Forward Converter RDFC applications. As the main power switch, the BJT
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AN-2276
AN-2276-0904
07-Apr-2009
bjt specifications
TRANSISTORS BJT list
DG-2128
DG2128
POWER BJTs
common base bjt
DS-1639
CAMSEMI
common emitter bjt
TRANSISTOR REPLACEMENT table for transistor
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high frequency bjt
Abstract: bjt specifications Drive Base BJT power BJT Transistor BJT High Current FLYBACK APPLICATION NOTES bjt 500v optoisolator
Text: iW1810 Off-Line Digital Green-Mode PWM Controller Integrated with Power BJT 1.0 Features 2.0 Description ●● Primary-side feedback eliminates opto-isolators and simplifies design ●● Internal 800-V bipolar junction transistor BJT ●● 64 kHz PWM switching frequency
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iW1810
high frequency bjt
bjt specifications
Drive Base BJT
power BJT
Transistor BJT High Current
FLYBACK APPLICATION NOTES
bjt 500v
optoisolator
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Untitled
Abstract: No abstract text available
Text: LM95245 LM95245 Precision Remote Diode Digital Temperature Sensor with TruTherm BJT Beta Compensation Technology for 45nm Process Literature Number: SNIS148F LM95245 Precision Remote Diode Digital Temperature Sensor with TruTherm® BJT Beta Compensation Technology for 45nm
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LM95245
LM95245
SNIS148F
11-bit
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2N3904
Abstract: LM96163 LM96163C LM96163CISD LM96163CISDX QFN10 RLs6
Text: LM96163 Remote Diode Digital Temperature Sensor with Integrated Fan Control and TruTherm BJT Transistor Beta Compensation Technology General Description The LM96163 has remote and local temperature sensors with integrated fan control that includes TruTherm BJT transistor
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LM96163
LM96163
2N3904,
2N3904
LM96163C
LM96163CISD
LM96163CISDX
QFN10
RLs6
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RTU620
Abstract: No abstract text available
Text: LM96163 LM96163 Remote Diode Digital Temperature Sensor with Integrated Fan Control and TruTherm BJT Transistor Beta Compensation Technology Literature Number: SNAS433C LM96163 Remote Diode Digital Temperature Sensor with Integrated Fan Control and TruTherm® BJT Transistor Beta
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LM96163
LM96163
SNAS433C
RTU620
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Untitled
Abstract: No abstract text available
Text: LM96163 Remote Diode Digital Temperature Sensor with Integrated Fan Control and TruTherm BJT Transistor Beta Compensation Technology General Description The LM96163 has remote and local temperature sensors with integrated fan control that includes TruTherm BJT transistor
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LM96163
LM96163
2N3904,
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Untitled
Abstract: No abstract text available
Text: LM96163 Remote Diode Digital Temperature Sensor with Integrated Fan Control and TruTherm BJT Transistor Beta Compensation Technology General Description The LM96163 has remote and local temperature sensors with integrated fan control that includes TruTherm BJT transistor
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LM96163
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power BJT
Abstract: bjt specifications IW1810 circuits using BJT Flyback transformer Computer Monitor bjt gate drive circuit JB 71 JESD22-A114 bjt 100 Application Note AC-DC battery charger constant
Text: iW1810 Off-Line Digital Green-Mode PWM Controller Integrated with Power BJT 1.0 Features Intelligent AC-DC and LED Power 2.0 Description ● Primary-side feedback eliminates opto-isolators and simplifies design ● Internal 800-V bipolar junction transistor BJT
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iW1810
power BJT
bjt specifications
IW1810
circuits using BJT
Flyback transformer Computer Monitor
bjt gate drive circuit
JB 71
JESD22-A114
bjt 100
Application Note AC-DC battery charger constant
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transistor 2sc5353
Abstract: 2sa2035 TRANSISTOR SMD 13W HA2003 Bjt 60 w 600v .5A pnp transistor 800v TPC6D02 VS6 SOT23 400V dvc to 5V DC Regulator MSTM TOSHIBA
Text: Bipolar Power Transistor Dec, 2003 TOSHIBA Semiconductor Company Discrete Semiconductor Division 2003 Dec DP0540001_02 1/29 Application Application Map Map of of Low Low VCE sat VCE(sat) BJT BJT Process Standard Standard Feature High hFE Hi-Met 3rd NPN 400 to 1000
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DP0540001
200kHz
200kHz
280ns
transistor 2sc5353
2sa2035
TRANSISTOR SMD 13W
HA2003
Bjt 60 w 600v .5A
pnp transistor 800v
TPC6D02
VS6 SOT23
400V dvc to 5V DC Regulator
MSTM TOSHIBA
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bjt 107
Abstract: bjt specifications PWM switch AC-DC Drive Base BJT power BJT SWITCHING bjt 500v small signal BJT transistor 20 A BJT small signal bjt specifications low voltage high current BJT
Text: iW1812 Off-Line Digital Green-Mode PWM Controller Integrated with Power BJT and OTP 1.0 Features Intelligent AC-DC and LED Power 2.0 Description ●● Primary-side feedback eliminates opto-isolators and simplifies design ●● Internal 800-V bipolar junction transistor BJT
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iW1812
bjt 107
bjt specifications
PWM switch AC-DC
Drive Base BJT
power BJT
SWITCHING bjt 500v
small signal BJT transistor
20 A BJT
small signal bjt specifications
low voltage high current BJT
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Untitled
Abstract: No abstract text available
Text: iW1816 Off-Line Digital Green-Mode PWM Controller Integrated with Power BJT and OTP 1.0 Features 2.0 Description ●● Primary-side feedback eliminates opto-isolators and simplifies design ●● Internal 800-V bipolar junction transistor BJT ●● Adaptively controlled soft start-up enables fast and
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iW1816
64kHz
230VAC
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Untitled
Abstract: No abstract text available
Text: BCP5316Q 80V PNP MEDIUM POWER TRANSISTORS IN SOT223 Description Applications This Bipolar Junction Transistor BJT has been designed to meet the stringent requirements of Automotive Applications. • Medium Power Switching or Amplification Applications
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BCP5316Q
OT223
-500mV
BCP5616Q
DS36980
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Abstract: No abstract text available
Text: BCP5616Q 80V NPN MEDIUM POWER TRANSISTORS IN SOT223 Description Applications This Bipolar Junction Transistor BJT has been designed to meet the stringent requirements of Automotive Applications. • Medium Power Switching or Amplification Applications
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BCP5616Q
OT223
500mV
BCP5316Q
DS36981
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Untitled
Abstract: No abstract text available
Text: BCP5316Q 80V PNP MEDIUM POWER TRANSISTORS IN SOT223 Description Applications This Bipolar Junction Transistor BJT has been designed to meet the • Medium Power Switching or Amplification Applications stringent requirements of Automotive Applications. •
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BCP5316Q
OT223
-500mV
BCP5616Q
DS36980
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Untitled
Abstract: No abstract text available
Text: C2173 Datasheet Primary Side Sensing SMPS Controller KEY FEATURES AND ADVANTAGES • Advanced primary sensing control circuitry achieves accurate voltage and current CV and CC regulation • Bipolar junction transistor (BJT) primary switch enables ultra low BOM cost
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C2173
C2173
OT23-6
DS-5706-1403
03-Mar-2014
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Abstract: No abstract text available
Text: FRED, Rectifier Diode and Thyristor Chips in Planar Design Fast Recovery Epitaxial Diodes FRED Rectifier Diode and Thyristor Chips Power switches (IGBT, MOSFET, BJT, GTO) for applications in electronics are only as good as their associated free-wheeling
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Text: HOME La Lb PRINT Line Interface FIND Hook Switch HT0640 TOPIC Single Chip Telephone Example Line Current Sense BJT Ear Piece Soft Clip Microphone Speaker Melody Sequencer Ring Frequency Discrimination Control Logic Key Pad Osc Ram Dialler Micro Controller
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HT0640
SA2531
SA2532
HT0640
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L6520
Abstract: ccp 3400 st ELECTRONIC ballast choke details programmable ignition automotive ccp 3400 bjt half bridge driver Ignition Transformer Drive Base BJT lsd 0007
Text: L6520 Low voltage smart ballast controller Preliminary data Features • Half bridge circuit able to drive both BJT and MOSFET transistors ■ BJTs' storage time compensation ■ Preheated start and instant start ■ Hard switching protection ■ Overcurrent / voltage protection
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L6520
L6520
ccp 3400 st
ELECTRONIC ballast choke details
programmable ignition automotive
ccp 3400
bjt half bridge driver
Ignition Transformer
Drive Base BJT
lsd 0007
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Untitled
Abstract: No abstract text available
Text: RF2436 MICRO-DEVICES TRANSMIT/RECEIVE SWITCH Typical Applications • Cordless Phones • General Purpose RF Switching • Wireless Computer Peripherals • Commercial and Consumer Systems • Wireless Security Systems Product Description .071 .059 Si BJT
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RF2436
RF2436
28dBm
2000MHz.
OT-23
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DWEP
Abstract: stud type diodes
Text: Diodes Diodes for High Switching Frequencies Diodes for General Purpose Applications Fast Recovery Epitaxial Diodes FRED Rectifier Diodes Power switches (IGBT, MOSFET, BJT, GTO) for applications in electronics are only as good as their associated free
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Untitled
Abstract: No abstract text available
Text: Diodes Diodes for High Switching Frequencies Diodes for General Purpose Applications Fast Recovery Epitaxial Diodes FRED Rectifier Diodes Power switches (IGBT, MOSFET, BJT, GTO) for applications in electronics are only as good as their associated free
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diode avalanche DSA 42
Abstract: No abstract text available
Text: Diodes Diodes for High Switching Frequencies Diodes for General Purpose Applications Fast Recovery Epitaxial HiPerFRED; FRED Rectifier Diodes Diodes Power switches (IGBT, MOSFET, BJT, GTO) for applications in electronics are only as good as their associated free
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Untitled
Abstract: No abstract text available
Text: FRED, Rectifier Diode and Thyristor Chips in Planar Design Fast Recovery Epitaxial Diodes FRED Rectifier Diode and Thyristor Chips Power switches (IGBT, MOSFET, BJT, GTO) for applications in electronics are only as good as their associated free-wheeling
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1999IXYS
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high power fast recovery diodes
Abstract: No abstract text available
Text: Diodes Diodes for High Switching Frequencies Diodes for General Pur pose Applications Fast Recovery Epitaxial Diodes FRED Rectifier Diodes Power switches (IGBT, MOSFET, BJT, GTO) for applications in electronics are only as good as their associated free
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